The Physics of Semiconductor Devices

1260 Pages·2019·54.243 MB·English

by  R. K. Sharma, D.S. Rawal

Springer Proceedings in Physics 215
Editors
R. K. Sharma · D. S. Rawal   
The Physics of
Semiconductor
Devices
Proceedings of IWPSD 2017
Springer Proceedings in Physics
Volume 215
The series Springer Proceedings in Physics, founded in 1984, is devoted to timely
reports of state-of-the-art developments in physics and related sciences. Typically
based on material presented at conferences, workshops and similar scientific
meetings, volumes published in this series will constitute a comprehensive
up-to-date source of reference on a field or subfield of relevance in contemporary
physics. Proposals must include the following:
– name, place and date of the scientific meeting
– a link to the committees (local organization, international advisors etc.)
– scientific description of the meeting
– list of invited/plenary speakers
– an estimate of the planned proceedings book parameters (number of pages/
articles, requested number of bulk copies, submission deadline).
More information about this series at http://www.springer.com/series/361
R. K. Sharma D. S. Rawal
(cid:129)
Editors
The Physics
of Semiconductor Devices
Proceedings of IWPSD 2017
123
Editors
R. K.Sharma D.S.Rawal
Solid State Physics Laboratory Solid State Physics Laboratory
Delhi, India Delhi, India
ISSN 0930-8989 ISSN 1867-4941 (electronic)
SpringerProceedings in Physics
ISBN978-3-319-97603-7 ISBN978-3-319-97604-4 (eBook)
https://doi.org/10.1007/978-3-319-97604-4
LibraryofCongressControlNumber:2018951402
©SpringerNatureSwitzerlandAG2019
Thisworkissubjecttocopyright.AllrightsarereservedbythePublisher,whetherthewholeorpart
of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations,
recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission
orinformationstorageandretrieval,electronicadaptation,computersoftware,orbysimilarordissimilar
methodologynowknownorhereafterdeveloped.
The use of general descriptive names, registered names, trademarks, service marks, etc. in this
publicationdoesnotimply,evenintheabsenceofaspecificstatement,thatsuchnamesareexemptfrom
therelevantprotectivelawsandregulationsandthereforefreeforgeneraluse.
The publisher, the authors and the editors are safe to assume that the advice and information in this
book are believed to be true and accurate at the date of publication. Neither the publisher nor the
authorsortheeditorsgiveawarranty,expressorimplied,withrespecttothematerialcontainedhereinor
for any errors or omissions that may have been made. The publisher remains neutral with regard to
jurisdictionalclaimsinpublishedmapsandinstitutionalaffiliations.
ThisSpringerimprintispublishedbytheregisteredcompanySpringerNatureSwitzerlandAG
Theregisteredcompanyaddressis:Gewerbestrasse11,6330Cham,Switzerland
Contents
Part I 2D Materials Organic Semiconductors and Display
Technologies
1 Enhanced Photodetection in Visible Region in rGO/GaN
Based Hybrid Photodetector . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Nisha Prakash, Gaurav Kumar, Manjri Singh, Prabir Pal,
Surinder P. Singh and Suraj P. Khanna
2 ZigZag Phosphorene Nanoribbons Antidot—Electronic
Structure and Device Application . . . . . . . . . . . . . . . . . . . . . . . 7
Santhia Carmel, Adhithan Pon, R. Ramesh
and Arkaprava Bhattacharyya
3 CalculationofQuantumCapacitanceandSheetCarrierDensity
of Graphene FETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
S. R. Pattanaik, Sriyanka Behera and G. N. Dash
4 Effect of Back Gate Voltage on Double Gate Single Layer
Graphene Field-Effect Transistor with Improved I . . . . . . . . 21
ON
Garima Shukla, Abhishek Upadhyay and S. K. Vishvakarma
5 Effects of Chemical Functionalization on Single-Walled
Carbon Nanotubes by Mild Hydrogen Peroxide for PV
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
D. Jamwal, S. Dhall, N. Kumari and R. Vaid
6 Effect of Tip Induced Strain on Nanoscale Electrical Properties
of MoS -Graphene Heterojunctions. . . . . . . . . . . . . . . . . . . . . . 35
2
Vishakha Kaushik, Deepak Varandani, Pintu Das and B. R. Mehta
7 Optimization of the Concentration of Molybdenum Disulfide
(MoS ) for Formation of Atomically Thin Layers. . . . . . . . . . . 39
2
Vineeta and Shyama Rath
v
vi Contents
8 Fabrication of 2D NEMS on Flexible Substrates for Strain
Engineering in Sensing Applications . . . . . . . . . . . . . . . . . . . . . 45
Swapnil More and Akshay Naik
9 Transition Metal Doped ZnS Monolayer: The First Principles
Insights . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Rajneesh Chaurasiya and Ambesh Dixit
10 Tuning Resonant Wavelength of Silicon Micro-ring Resonator
with Graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Aneesh Dash, J. Vadivukkarasi, S. K. Selvaraja and A. K. Naik
11 Effect of Diameter and Doping on Electronic Band Structure
of Single-Walled Carbon Nanotubes . . . . . . . . . . . . . . . . . . . . . 61
Anup Kumar Sharma and Swati Sharma
12 Limitations of Mott-Schottky Analysis for Organic
Metal-Insulator-Semiconductor Capacitors . . . . . . . . . . . . . . . . 69
Manda Prashanth Kumar, Karunakaran Logesh and Soumya Dutta
13 Study on the Conventional Versus Photonic (IPL) Sintering
of Copper Nanoparticle (Cu NPs) Inks on Different Flexible
Substrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Svetlana P. Jose, Piyush Kumar, Chinmay Bapat, Ashish Gupta,
Juliane Tripathi, Monica Katiyar and Y. N. Mohapatra
14 GO Nanosheets for Solar Assisted Dye Degradation
in Aqueous Solution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Mahima Sharma, Kannikka Behl, Subhasha Nigam
and Monika Joshi
15 Resonant and Non-resonant Solutions of the Non-linear
Vibration of SWCNTs Embedded in Viscous Elastic Matrix
Using KBM Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Monika Tyagi, Ayub Khan, Mushahid Husain and Samina Husain
16 Broadband Photodetector with Lateral n-rGO/p+Si
Heterojunction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Manjri Singh, Gaurav Kumar, Nisha Prakash, Suraj P. Khanna,
Prabir Pal and Surinder P. Singh
17 Role of MoS on the Electrical and Thermoelectric Properties
2
of Bi Te and Sb Te Alloys . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
2 3 2 3
Mujeeb Ahmad, Deepak Varandani and B. R. Mehta
18 Temperature Dependent Open Circuit Voltage Variation
of Organic Solar Cells. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Prashanth Kumar Manda, Rajdeep Dhar and Soumya Dutta
Contents vii
19 Effect of Pulsed Electric Field Annealing on P3HT: PCBM
Inverted Solar Cell Structure . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Chinmay N. Oak and S. Sundar Kumar Iyer
20 Towards High Performance Large Area Two Color
Hybrid White Organic Light Emitting Diodes for Lighting
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Madhu Seetharaman, Asha Awasthi,
Jaya Sandhya Meenakshinathan, Gaurav Garg, Akanksha Mohan,
Krishna Manohara, Surya Bindu, Muralidharan Balakrishnan
and Monica Katiyar
21 Surface Enhanced IR Absorption and Raman Detection
of Tryptophan Amino Acids Over Silver Nanoislands
Deposited on Graphene. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Preeti Garg, Praveen Sahoo, R. Raman and R. K. Soni
22 Synthesis, Characterization and Temperature Dependence
of Conductivity in Poly (o-toluidine) . . . . . . . . . . . . . . . . . . . . . 139
Navdeep Sharma and Atul Kapil
23 Solvent Mixture Formulation for Inkjet Printable Light
Emitting Polymer with Pixdro LP50-Ink Formulation
for Inkjet Printing of MEH: PPV . . . . . . . . . . . . . . . . . . . . . . . 149
Svetlana P. Jose, Krishnamanohara, Madhu Seetharaman,
Dennis Cherian, Chinmay Bapat, S. Juliane Tripathi
and Monica Katiyar
24 Transport Properties and Sub-band Modulation
of the SWCNT Based Nano-scale Transistors . . . . . . . . . . . . . . 155
Surender Pratap and Niladri Sarkar
Part II III-Nitride: Materials and Devices
25 Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT
on SiC Substrate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Madhulika, Himanshu Pandey, Meenu Garg, Neelu Jain,
Sanjeev Kumar, Amit Malik, D. S. Rawal, Meena Mishra
and Arun K. Singh
26 Device Optimization of E-Mode N-Polar GaN MOS-HEMT
for Low Noise RF and Microwave Applications . . . . . . . . . . . . 171
D. K. Panda and T. R. Lenka
27 60Coc Irradiation Effects on I–V Characteristics of AlGaN/GaN
Schottky Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Chandan Sharma, Robert Laishram, Amit, D. S. Rawal,
Seema Vinayak and Rajendra Singh
viii Contents
28 EffectofAlGaN BarrierThicknessonTrapping Characteristics
in AlGaN/GaN Heterostructures . . . . . . . . . . . . . . . . . . . . . . . . 183
Apurba Chakraborty, Saptarsi Ghosh, Subhashis Das, Ankush Bag
and Dhrubes Biswas
29 Effect of Surface Treatments on the Evolution of
Microstructures in GaN Thin Films and GaN/AlGaN/GaN
Heterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Mansi Agrawal, B. R. Mehta and R. Muralidharan
30 EffectofArgonPlasmaTreatmentonOhmicContactFormation
in AlGaN/GaN HEMTs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Sonalee Kapoor, Robert Laishram, Hemant Saini, Somna Mahajan,
Rupesh Kumar Chaubey, D. S. Rawal and Seeema Vinayak
31 Investigation on the Variation of Sheet Resistance
of RF Deposited Nichrome Thin Films with Deposition
Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Ajay Kumar Visvkarma, Robert Laishram, Hemant Kumar Saini,
Rajeev Kumar Sawal, Sonalee Kapoor and D. S. Rawal
32 A Physics Based Analytical Model for the Threshold Voltage
of a Normally-off AlGaN/GaN FinFET . . . . . . . . . . . . . . . . . . . 205
Punyabrata Ghatak, Debashis Dutta and Navakanta Bhat
33 Trapping Phenomenon in AlInN/GaN HEMTs: A Study
Based on Drain Current Transient Spectroscopy . . . . . . . . . . . 219
Ayush Khandelwal, Gourab Dutta, Amitava DasGupta
and Nandita DasGupta
34 Development of GaN HEMTs Based Biosensor. . . . . . . . . . . . . 225
N. Chaturvedi, S. Mishra, S. Dhakad, N. Sharma, K. Singh,
N. Chaturvedi, R. Taliyan, A. Chauhan, D. K Kharbanda
and P. K Khanna
35 Performance of Wide Band Gap Semiconductors Impatts
at THz Frequencies. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231
S. P. Pati
36 1.7–2.1 GHz GaN Linear Power Amplifier . . . . . . . . . . . . . . . . 235
Ashish Jindal, Rajiv, Parul Gupta, Umakant Goyal, S. K. Tomer,
Meena Mishra and Seema Vinayak
37 Computation of Electronic and Optical Properties of GaAsNSb
with 16 Band k dot p Model. . . . . . . . . . . . . . . . . . . . . . . . . . . 241
Indranil Mal, Asish Hazra, D. P. Samajdar and T. D. Das
Contents ix
38 Growth and Characterization of Gallium Nitride Nanowires
on Nickel/Sapphire Template by Chemical Vapour
Deposition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Sankaranarayanan Sanjay, Prabakaran Kandasamy, Shubra Singh
and Krishnan Baskar
39 Effect of Growth Time on Thickness of InAlN/GaN
Heterostructures Grown by MOCVD . . . . . . . . . . . . . . . . . . . . 255
Pradeep Siddham, Surender Subburaj, Prabakaran Kandasamy,
Jayasakthi Mathiyan, Shubra Singh and Baskar Krishnan
40 Direct Epitaxial Lateral Overgrowth of GaN on Sapphire . . . . 263
Viswas Sadasivan and Manish Mathew
41 Thermal Control of Stress in Photoresist Film for Improving
Selectivity in Electro-Plating Process. . . . . . . . . . . . . . . . . . . . . 269
Niraj Kumar, Rajesh Kumar Jat, Prateek Kumar,
Hemant Kumar Saini, Sneh Lata, Rupesh Kumar Chaubey,
Robert Laishram, Vanita R. Agarwal and D. S. Rawal
42 SurfaceStudyofAlGaN/GaNHighElectronMobilityTransistor
for Fabrication Process Improvement . . . . . . . . . . . . . . . . . . . . 273
Rupesh Kumar Chaubey, Anshu Goyal, Robert Laishram,
Sonalee Chopra, Amit, Niraj Kumar, Prateek Kumar
and Hemant Kumar Saini
43 TheDependenceofoff-StateBreakdownofAlGaN/GaNHEMTs
on Buffer Traps, Gate Bias and Field Plate. . . . . . . . . . . . . . . . 279
Sukalpa Mishra, Sudipto Bhattacharya, D. S. Rawal
and S. Karmalkar
44 Terahertz Properties of GaN/AlGaN Heterostructure
IMPATT Diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285
S. K. Swain, S. R. Pattanaik, Janmejaya Pradhan and G. N. Dash
45 Enhancement-Mode High Electron Mobility Transistor
on SiC Substrate with T-Gate Field Plate for High Power
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289
Subhash Chander, Ajay and Mridula Gupta
46 Oxygen Ion Implantation Induced Effects in GaN
Epilayer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 301
Akhilesh Pandey, R. Raman, S. P. Chaudhaury, Davinder Kaur
and Ashok K. Kapoor