The Fourth Terminal: Benefits of Body-Biasing Techniques for FDSOI Circuits and Systems PDF
Preview The Fourth Terminal: Benefits of Body-Biasing Techniques for FDSOI Circuits and Systems
Integrated Circuits and Systems Sylvain Clerc Thierry Di Gilio Andreia Cathelin Editors The Fourth Terminal Benefits of Body-Biasing Techniques for FDSOI Circuits and Systems Integrated Circuits and Systems Serieseditor AnanthaP.Chandrakasan,MassachusettsInstituteofTechnology Cambridge,MA,USA Moreinformationaboutthisseriesathttp://www.springer.com/series/7236 Sylvain Clerc • Thierry Di Gilio (cid:129) Andreia Cathelin Editors The Fourth Terminal Benefits of Body-Biasing Techniques for FDSOI Circuits and Systems Editors SylvainClerc ThierryDiGilio STMicroelectronics STMicroelectronics Crolles,France Crolles,France AndreiaCathelin STMicroelectronics Crolles,France ISSN1558-9412 ISSN1558-9420 (electronic) IntegratedCircuitsandSystems ISBN978-3-030-39495-0 ISBN978-3-030-39496-7 (eBook) https://doi.org/10.1007/978-3-030-39496-7 ©SpringerNatureSwitzerlandAG2020 Thisworkissubjecttocopyright.AllrightsarereservedbythePublisher,whetherthewholeorpartof thematerialisconcerned,specificallytherightsoftranslation,reprinting,reuseofillustrations,recitation, broadcasting,reproductiononmicrofilmsorinanyotherphysicalway,andtransmissionorinformation storageandretrieval,electronicadaptation,computersoftware,orbysimilarordissimilarmethodology nowknownorhereafterdeveloped. Theuseofgeneraldescriptivenames,registerednames,trademarks,servicemarks,etc.inthispublication doesnotimply,evenintheabsenceofaspecificstatement,thatsuchnamesareexemptfromtherelevant protectivelawsandregulationsandthereforefreeforgeneraluse. Thepublisher,theauthors,andtheeditorsaresafetoassumethattheadviceandinformationinthisbook arebelievedtobetrueandaccurateatthedateofpublication.Neitherthepublishernortheauthorsor theeditorsgiveawarranty,expressedorimplied,withrespecttothematerialcontainedhereinorforany errorsoromissionsthatmayhavebeenmade.Thepublisherremainsneutralwithregardtojurisdictional claimsinpublishedmapsandinstitutionalaffiliations. ThisSpringerimprintispublishedbytheregisteredcompanySpringerNatureSwitzerlandAG. Theregisteredcompanyaddressis:Gewerbestrasse11,6330Cham,Switzerland Toourfamilies. vi FD-SOItransistorTEM,thetransistors’channelisthevolumebetweenthegatesandthewhite coloredburiedoxide.CopyrightSTMicroelectronics.Usedwithpermission Foreword This book deals with applying a voltage potential to the volume below the buried oxideintheTEMadjacentphotography,andthismodulatestransistor’sV ;hence, T themotto“FD-SOIBody-BiasenablessoftwaredefinedV .” T Crolles,France SylvainClerc Crolles,France ThierryDiGilio Crolles,France AndreiaCathelin December2019 vii Acknowledgements The authors are indebted to the many people who supported, helped, contributed, or reviewed this book. We specially thank Robin Wilson, Martin Cochet on top ofhisownchapterwriting,YannCarminati,FredericPaillardet,FredericHasbani, Dominique Bousquet, Phillipe Larré, Lise Doyen, Philippe Cathelin, Laurent Le- Pailleur, Sylvain Biard, Mourad Djouder, Stéphane Hanriat, Jean-Michel Mirabel, PhilippeQuinio,CyrilColin-Madan,LaurentMalier,andPatrickAidoune.Lastbut not least, the authors would like to acknowledge the leading contribution of Joel HartmanninFD-SOItechnologydeployment. Wealsoacknowledge thecontribution ofmany STMicroelectronics Colleagues involved beside the course of their regular duties; we thank you all gentlewomen andgentlemen. ix Contents 1 Introduction................................................................. 1 AndreiaCathelinandSylvainClerc PartI DeviceLevelandGeneralStudiesforAnalogandDigital 2 FD-SOITechnology ........................................................ 9 FranckArnaud 3 Body-BiasforDigitalDesigns ............................................. 59 SylvainClercandRicardoGomezGomez 4 Body-BiasinginFD-SOIforAnalog,RF,andMillimeter-Wave Designs....................................................................... 85 AndreiaCathelin 5 SRAMBitcellFunctionalityUnderBody-Bias.......................... 93 LorenzoCiampolini PartII DesignExamples:FromAnalogRFandmmWtoDigital. FromBuildingBlocksandCircuitstoSoCs 6 Coarse/FineDelayElementDesignin28nmFD-SOI.................. 119 IliasSourikopoulos,AndreiaCathelin,AndreasKaiser, andAntoineFrappé 7 Millimeter-WaveDistributedOscillatorsin28nmFD-SOI Technology................................................................... 135 RaphaëlGuillaume,AndreiaCathelin,andYannDeval 8 Millimeter-WavePowerAmplifiersfor5GApplicationsin 28nmFD-SOITechnology................................................. 169 FlorentTorres,AndreiaCathelin,andEricKerhervé xi
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