STMicroelectronics STI10NM60N Datasheet

0.68 MB·English

by  STMicroelectronics

STI10NM60N
N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET
in I²PAK package
Datasheet - obsolete product
Features
TAB
V R
Order code @TJDmSax mDSa(xo.n) ID s )PTOT
123 STI10NM60N 650 V < 0.55 Ω t10( A 70 W
I2PAK c
u
• 100% avalanche tested
d
• Low input capacitance oand gate charge
r
• Low gate input resPistance
Figure 1. Internal schematic diagram
e
Applicaetitons
l
o
(cid:39)(cid:11)(cid:21)(cid:15)(cid:3)(cid:55)(cid:36)(cid:37)(cid:12) • Sswitching applications
b
O
Description

-

) This device is an N-channel Power MOSFET
s
(cid:42)(cid:11)(cid:20)(cid:12) ( developed using the second generation of
t
c MDmesh™ technology. This revolutionary Power
u
MOSFET associates a vertical structure to the
d
company’s strip layout to yield one of the world’s
o
(cid:54)(cid:11)(cid:22)(cid:12)
r lowest on-resistance and gate charge. It is
P
therefore suitable for the most demanding high

e efficiency converters.
(cid:36)(cid:48)(cid:19)(cid:20)(cid:23)(cid:26)(cid:24)(cid:89)(cid:20)
t
e
l
o Table 1. Device summary
s
b Order code Marking Package Packing
O
STI10NM60N 10NM60N I²PAK Tube

December 2015 DocID15764 Rev 8 1/12
This is information on a discontinued product. www.st.com
Contents STI10NM60N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
)
s
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (. . . . . . 9
t
c
4.1 I2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . u. . . . . . . . . . . 9
d
o
r
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . .P . . . . . . . . . . . . . . . . 11

e
t
e
l
o
s
b
O

-

)
s
(
t
c
u
d
o
r
P

e
t
e
l
o
s
b
O

2/12 DocID15764 Rev 8
STI10NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter
I²PAK Unit
V Gate- source voltage ± 25 V
GS
I Drain current (continuous) at T = 25 °C 10 A
D C
ID Drain current (continuous) at TC = 100 °C 5 )A
s
I (1) Drain current (pulsed) 32 ( A
DM t
c
PTOT Total dissipation at TC = 25 °C u70 W
d
dv/dt(2) Peak diode recovery voltage slope 15 V/ns
o
r
Insulation withstand voltage (RMS) from all three leadPs to
V V
ISO external heat sink (t = 1 s; TC = 25 °C)
e
T Operating junction temperature t
J e - 55 to 150 °C
Tstg Storage temperature ol
s
1. Pulse width limited by safe operating area.
b
2. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BRO)DSS, VDD = 80% V(BR)DSS.

-
) Table 3. Thermal data
s
( Value
t
Symbol c Parameter
u I²PAK Unit
d
Rthj-case oThermal resistance junction-case max. 1.79 °C/W
r
R P Thermal resistance junction-ambient max. 62.50 °C/W
thj-amb

eR Thermal resistance junction-pcb max. °C/W
thj-pcb
t
e
l
o
Table 4. Avalanche characteristics
s
b
Symbol Parameter Value Unit
O
IAS Avalanche current, repetitive or not- 4 A
repetitive (pulse width limited by Tj max.)

Single pulse avalanche energy
EAS 200 mJ
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
DocID15764 Rev 8 3/12
12
Electrical characteristics STI10NM60N
2 Electrical characteristics
(T = 25 °C unless otherwise specified)
case
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
I = 1 mA, V = 0
D GS
Drain-source
V I = 1 mA, V = 0, 600 V
(BR)DSS breakdown voltage D GS 650
T = 150 °C
C
)
Zero-gate voltage s
V = 600 V 1 µA
I drain current DS (
DSS (V = 0) VDS = 600 V, TC = 125 °C ct100 µA
GS u
d
Gate-body leakage
I V = ± 25 V o ± 100 nA
GSS current (VDS = 0) GS r
P
VGS(th) Gvoalttaeg tehreshold VDS = VGS, ID = 250 µA e 2 3 4 V
t
e
Static drain-source
RDS(on) on-resistance VGS = 10 V, ID = 4o lA 0.53 0.55 Ω
s
b
O

-Table 6. Dynamic

)
s
Symbol Parameter Test conditions Min. Typ. Max. Unit
(
t
c
C Input capacitance - 540 - pF
iss u
C Outpudt capacitance - 44 - pF
oss o VDS = 50 V, f = 1 MHz, VGS = 0
rReverse transfer
C P - 1.2 - pF
rss capacitance

e
Equivalent
t
e C (1) capacitance time V = 0 to 480 V, V = 0 - 110 - pF
l oss eq DS GS
o related
s
b R Gate input resistance f =1 MHz open drain - 6 - Ω
g
O
Q Total gate charge - 19 - nC
g
Q Gate-source charge VDD = 480 V, ID = 8 A, - 3 - nC
gs VGS = 10 V

Q Gate-drain charge - 10 - nC
gd
1. C time related is defined as a constant equivalent capacitance giving the same charging time as C
oss eq. oss
when V increases from 0 to 80% V .
DS DSS
4/12 DocID15764 Rev 8
STI10NM60N Electrical characteristics
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t Turn-on delay time - 10 - ns
d(on)
tr Rise time VDD = 300 V, ID = 4 A, - 12 - ns
td(off) Turn-off-delay time RG = 4.7 Ω, VGS = 10 V - 32 - ns
t Fall time - 15 - ns
f
Table 8. Source-drain diode )
s
Symbol Parameter Test conditions Min. Typ. M(ax. Unit
t
c
I Source-drain current u 8 A
I SD(1) Source-drain current (pulsed) -d 32 A
SDM o
V (2) Forward on voltage I = 8 A, V = 0 r - 1.3 V
SD SD GS P
trr Reverse recovery time e - 250 ns
Q Reverse recovery charge ISD = 8 A, di/dte =t 100 A/µs - 2.12 µC
rr VDD= 60 Vol
I Reverse recovery current 17 A
RRM s
t Reverse recovery time b - 315 ns
rr
O
I = 8 A, di/dt = 100 A/µs
Q Reverse recovery charge SD 2.6 µC
rr - VDD= 60 V TJ = 150 °C

IRRM Reverse recovery curr)ent 16.5 A
s
1. Pulse width limited by safe o(perating area.
t
c
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
u
d
o
r
P

e
t
e
l
o
s
b
O

DocID15764 Rev 8 5/12
12
Electrical characteristics STI10NM60N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for I²PAK Figure 3. Thermal impedance for I²PAK

ID AM03944v1
(A)
1µs
10
10µs
1 OpeLriatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100m0msµss
)
Tj=150°C s
0.1 (
Tc=25°C t
c
Single
u
pulse
d
0.01
o
0.1 1 10 100 VDS(V)
r
P
Figure 4. Output characteristics Figure 5. Tr ansfer characteristics
e
ID AM03947v1 ID e t AM03948v1
(A)
(A) VGS=10V ol
14 14
s
VDS=20V
6V b
12 O 12
10 - 10

)
8 s 8
(
6 ct 6
u 5V
4 d 4
o
2 r 2
P 4V
0 0
0 5e 10 15 20 25 30 VDS(V) 0 2 4 6 8 10 VGS(V)
t
e
Figuorle 6. Normalized VDS vs. temperature Figure 7. Static drain-source on-resistance
b s VDS AM09028v1 RDS(on) AM00891v1
O (1no.1rm0) ID=1mA (Ω)

1.08 0.56

1.06

1.04 0.52
1.02
1.00 0.48
VGS=10V
0.98
0.96 0.44
0.94
0.92 0.40
-50 -25 0 25 50 75 100 TJ(°C) 0 2 4 6 8 ID(A)
6/12 DocID15764 Rev 8
STI10NM60N Electrical characteristics
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations

VGS AM03951v1 C AM03952v1
(V) (pF)
VDD=480V
12
ID=4A
VDS 1000
10 Ciss
8
100
6
Coss
4
10
)
2 s Crss
(
t
0 1 c
0 5 10 15 20 Qg(nC) 0.1 1 10 u100 VDS(V)
d
o
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs.
r
vs. temperature tempP erature
VGS(th) AM03953v1 RDS(on) e AM03954v1
(norm) t
ID=250µA (norm) e
1.10 2.1l
o
ID=4A
b s 1.9 VGS=10V
1.00 O 1.7
- 1.5

0.90 s ) 1.3
(
t 1.1
c
u
0.80 0.9
d
o 0.7
r
0.70 P 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)
e
t
e
l
o
s
b
O

DocID15764 Rev 8 7/12
12
Test circuits STI10NM60N
3 Test circuits
Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit
resistive load

VDD
12V 47kΩ 1kΩ
100nF
RL 2μ20F0 3μ.F3
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.)
VGS s
2200
RG D.U.T. μF 2.7kΩ ( VG
t
c
PW u
47kΩ
d
o
1kΩ
PW r
P
AM01468v1 AM01469v1

e
Figure 14. Test circuit for inductive load Figure 15. Unctlamped inductive load test circuit
e
switching and diode recovery times l
o
s
b
O
L
A A A

D -
G S D.U.T. FDAIOSTDE B L=100μH 3.3( s1)00 0 VD 2μ2F00 3μ.3F VDD
25Ω B B D ctμF μF VDD ID
u
G d
o
RG S
r Vi D.U.T.
P

e
t Pw
e
AM01470v1 AM01471v1
l
o
Fsigure 16. Unclamped inductive waveform Figure 17. Switching time waveform
b

O V(BR)DSS ton toff
VD tdon tr tdoff tf

90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
8/12 DocID15764 Rev 8
STI10NM60N Package information
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
2
4.1 I PAK package information
Figure 18. I2PAK (TO-262) package outline
)
s
(
t
c
u
d
o
r
P

e
t
e
l
o
s
b
O

-

)
s
(
t
c
u
d
o
r
P

e
t
e
l
o
s
b
O
0004982_Rev_H

DocID15764 Rev 8 9/12
12
Package information STI10NM60N
Table 9. I²PAK (TO-262) package mechanical data
mm
Dim.
Min. Typ. Max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
)
s
c2 1.23 1.32
(
t
D 8.95 9c.35
u
e 2.40 d 2.70
o
e1 4.95 r 5.15
P
E 10 10.40
e
L 13 t 14
e
L1 3.50 ol 3.93
s
L2 1.27 b 1.40
O

-

)
s
(
t
c
u
d
o
r
P

e
t
e
l
o
s
b
O

10/12 DocID15764 Rev 8