Semiconductor Nanostructures for Optoelectronic Applications

436 Pages·2004·7.71 MB·English

Semiconductor Nanostructures for
Optoelectronic Applications
ForalistingofrecenttitlesintheArtechHouse
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Semiconductor Nanostructures for
Optoelectronic Applications
Todd Steiner
Editor
Artech House, Inc.
Boston • London
www.artechhouse.com
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AcatalogrecordofthisbookisavailablefromtheU.S.LibraryofCongress.
BritishLibraryCataloguinginPublicationData
Semiconductornanostructuresforoptoelectronicapplications
—(ArtechHousesemiconductormaterialsanddeviceslibrary)
1.Semiconductors 2.Nanostructuredmaterials 3.Optoelectronicdevices
I.Steiner,Todd
621.3’8152
ISBN 1-58053-751-0
CoverdesignbyGaryRagaglia
©2004ARTECHHOUSE,INC.
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InternationalStandardBookNumber:1-58053-751-0
10987654321
Contents
CHAPTER 1
Introduction 1
1.1 Synopsis 1
1.2 Growth 1
1.3 OptoelectronicDevicesBasedonSemiconductorNanostructures 2
1.4 MaterialsforSemiconductorNanostructures 2
1.5 Summary 3
CHAPTER 2
Review of Crystal, Thin-Film, and Nanostructure Growth Technologies 5
2.1 Introduction 5
2.2 ReviewofThermodynamics 6
2.2.1 ChemicalReactions 7
2.2.2 PhaseDiagrams 7
2.3 BulkCrystalGrowthTechniques 8
2.3.1 CzochralskiMethod 8
2.3.2 BridgmanMethod 11
2.3.3 Float-ZoneMethod 13
2.3.4 LelyGrowthMethods 14
2.4 EpitaxialGrowthTechniques 16
2.4.1 LiquidPhaseEpitaxy 16
2.4.2 VaporPhaseEpitaxy 17
2.4.3 MolecularBeamEpitaxy 20
2.4.4 MetalorganicChemicalVaporDeposition 24
2.4.5 AtomicLayerEpitaxy 29
2.5 Thin-FilmDepositionTechniques 29
2.5.1 Plasma-EnhancedChemicalVaporDeposition 29
2.5.2 VacuumEvaporation 31
2.5.3 Sputtering 33
2.6 GrowthofNanostructures 34
2.6.1 PropertiesandRequirementsofQuantumDotDevices 35
2.6.2 GrowthTechniques 36
References 41
v
vi Contents
CHAPTER 3
Quantum Dot Infrared Photodetectors 45
3.1 Introduction 45
3.2 QDandQDIPStructureGrowthandCharacterization 49
3.2.1 GaAsCappedLargeandSmallInAsQDs 50
3.2.2 AlGaAsCappedLargeInAsMQDQDIPStructures 57
3.2.3 InGa AsCappedSmallandLargeInAsMQD-BasedQDIP
x 1-x
Structures 64
3.3 QDIPDeviceCharacteristics 76
3.3.1 DeviceStructures 76
3.3.2 UnintentionallyDopedLarge(PIG)InAs/GaAsMQD-Based
Detectors 77
3.3.3 QDIPswithAlGaAsBlockingLayers 87
3.3.4 InAs/InGaAs/GaAsQDIPs 92
3.3.5 Dual-ColorQDIPs 102
3.4 Prognosis 107
Acknowledgments 109
References 109
CHAPTER 4
Quantum Dot Lasers: Theoretical Overview 113
4.1 Introduction:DimensionalityandLaserPerformance 113
4.2 AdvantagesofanIdealizedQDLaser 115
4.3 ProgressinFabricatingQDLasers 115
4.4 State-of-the-ArtComplications 116
4.4.1 NonuniformityofQDs 117
4.4.2 ParasiticRecombinationOutsideQDs 126
4.4.3 ViolationofLocalNeutralityinQDs 129
4.4.4 ExcitedStates 131
4.4.5 SpatialDiscretenessofActiveElements:HoleBurning 132
4.4.6 IntrinsicNonlinearityoftheLight-CurrentCharacteristic 134
4.4.7 CriticalSensitivitytoStructureParameters 139
4.4.8 DependenceoftheMaximumGainontheQDShape 142
4.4.9 InternalOpticalLoss 143
4.5 NovelDesignsofQDLaserswithImprovedThresholdandPower
Characteristics 148
4.5.1 Temperature-InsensitiveThreshold 148
4.5.2 EnhancedPowerPerformance 150
4.6 OtherPerspectives 151
References 153
Contents vii
CHAPTER 5
High-Speed Quantum Dot Lasers 159
5.1 Introduction 159
5.2 MBEGrowthofSelf-OrganizedQDsandTheirElectronic
Properties 160
5.2.1 Self-OrganizedGrowthofIn(Ga)AsQDs 160
5.2.2 ElectronicSpectraofIn(Ga)As/GaAsQDs 161
5.3 SeparateConfinementHeterostructureQDLasersandTheir
Limitations 163
5.3.1 CarrierRelaxationandPhononBottleneckin
Self-OrganizedQDs 164
5.3.2 HotCarrierEffectsinSCHQDLasers 167
5.4 TunnelInjectionofCarriersinQDs 168
5.4.1 Tunneling-InjectionLaserHeterostructureDesignand
MBEGrowth 169
5.4.2 MeasurementofPhonon-AssistedTunnelingTimes 170
5.5 CharacteristicsofHigh-SpeedTunneling-InjectionQDLasers 172
5.5.1 RoomTemperatureDCCharacteristics 172
5.5.2 Temperature-DependentDCCharacteristics 172
5.5.3 High-SpeedModulationCharacteristics 174
5.6 Conclusion 183
Acknowledgments 183
References 183
CHAPTER 6
Zinc Oxide-Based Nanostructures 187
6.1 Introduction 187
6.1.1 GeneralPropertiesofZnO 187
6.1.2 ZnOOne-DimensionalNanostructures 189
6.2 GrowthTechniques 191
6.2.1 GrowthMechanisms 191
6.2.2 GrowthTechniques 194
6.2.3 Summary 210
6.3 Characterizations 211
6.3.1 StructuralCharacterizations 211
6.3.2 OpticalCharacterizations 215
6.4 DeviceApplications 219
6.4.1 OpticalDevices 219
6.4.2 ElectronicDevices 221
References 224
viii Contents
CHAPTER 7
Antimony-Based Materials for Electro-Optics 229
7.1 Introduction 229
7.1.1 Antimony 229
7.1.2 Sb-BasedIII-VSemiconductorAlloys 230
7.1.3 BulkSingle-CrystalGrowth 232
7.1.4 Applications 232
7.2 III-SbBinaryCompounds:GaSb,AlSb,andInSb 235
7.2.1 GaSb 235
7.2.2 AlSb 239
7.2.3 InSb 242
7.3 InAsSb 250
7.3.1 PhysicalProperties 250
7.3.2 GrowthofInAsSb 253
7.3.3 Characterizations 253
7.3.4 DeviceMeasurement 256
7.4 InTlSb 259
7.4.1 MOCVDGrowthofInTlSb 259
7.4.2 InTlSbPhotodetectors 262
7.5 InBiSb 262
7.5.1 MOCVDGrowthofInSbBi 262
7.5.2 InSbBiPhotodetectors 265
7.6 InTlAsSb 266
7.7 InAsSb/InAsSbPforIRLasers 267
7.7.1 GrowthandCharacterizationofInAsSbandInAsSbP 268
7.7.2 Strained-LayerSuperlattices 269
7.7.3 DeviceResults 271
7.8 GaSb/InAsTypeIISuperlatticeforIRPhotodetectors 273
7.8.1 Introduction 273
7.8.2 ExperimentalResultsforTypeIIPhotodetectors 275
Acknowledgments 284
References 285
CHAPTER 8
Growth, Structures, and Optical Properties of III-Nitride Quantum Dots 289
8.1 Introduction 289
8.2 GrowthofIII-NitrideQDs 291
8.2.1 MBEGrowthofIII-NitrideQDs 292
8.2.2 OtherTechniques 314
8.3 OpticalPropertiesofIII-NitrideQDs 317
8.3.1 EffectsofQuantumConfinement,Strain,andPolarization 318