RF and Microwave Power Amplifier Design

1141 Pages·2015·50.75 MB·English

by  Andrei Grebennikov

About the Author
Andrei Grebennikov received his Dipl. Eng. degree in radio electronics from
the Moscow Institute of Physics and Technology, Moscow, Russia, in 1980, and
his Ph.D. in radio engineering from the Moscow Technical University of
Communications and Informatics, Moscow, Russia, in 1991. He obtained long-
term academic and industrial experience working with the Moscow Technical
University of Communications and Informatics, also in Moscow, the Institute of
Microelectronics (Singapore), M/A-COM (Cork, Ireland), Infineon Technologies
(Munich, Germany, and Linz, Austria), and Bell Labs, Alcatel-Lucent (Dublin,
Ireland) as an Engineer, Researcher, Lecturer, and Educator. He has lectured as a
Guest Professor with the University of Linz, Linz, Austria, and presented short
courses and tutorials as an Invited Speaker at the IEEE International Microwave
Symposia, European and Asia-Pacific Microwave Conferences, the Institute of
Microelectronics (Singapore), the Motorola Design Centre (Penang, Malaysia),
the Tomsk State University of Control Systems and Radioelectronics (Tomsk,
Russia), and the Aachen Technical University (Aachen, Germany). He is an
author and co-author of more than 100 papers, holds 30 European and U.S.
patents and patent applications, and has authored six books dedicated to RF and
microwave circuit design.

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Contents
Preface
Acknowledgment
1 Two-Port Network Parameters and Passive Elements
1.1 Traditional Network Parameters
1.2 Scattering Parameters
1.3 Interconnections of Two-Port Networks
1.4 Practical Two-Port Networks
1.4.1 Single-Element Networks
1.4.2 π- and T-Type Networks
1.5 Three-Port Network with Common Terminal
1.6 Lumped Elements
1.6.1 Inductors
1.6.2 Capacitors
1.7 Transmission Line
References
2 Nonlinear Circuit Design Methods
2.1 Frequency-Domain Analysis
2.1.1 Trigonometric Identities
2.1.2 Piecewise-Linear Approximation
2.1.3 Bessel Functions
2.2 Time-Domain Analysis
2.3 Newton-Raphson Algorithm
2.4 Quasilinear Method
2.5 Harmonic Balance Method
2.6 X-Parameters
References
3 Nonlinear Active Device Modeling
3.1 Power MOSFETs
3.1.1 Small-Signal Equivalent Circuit
3.1.2 Determination of Equivalent Circuit
Elements
3.1.3 Nonlinear I-V Models
3.1.4 Nonlinear C-V Models
3.1.5 Charge Conservation
3.1.6 Gate-Source Resistance
3.1.7 Temperature Dependence
3.2 MESFETs and HEMTs
3.2.1 Small-Signal Equivalent Circuit
3.2.2 Determination of Equivalent Circuit
Elements
3.2.3 Curtice Quadratic Nonlinear Model
3.2.4 Materka-Kacprzak Nonlinear Model
3.2.5 Chalmers (Angelov) Nonlinear Model
3.2.6 IAF (Berroth) Nonlinear Model
3.2.7 Model Selection
3.3 BJTs and HBTs
3.3.1 Small-Signal Equivalent Circuit
3.3.2 Determination of Equivalent Circuit
Elements
3.3.3 Equivalence of Intrinsic π-and T-Type
Topologies
3.3.4 Nonlinear Bipolar Device Modeling
References
4 Impedance Matching
4.1 Main Principles
4.2 Smith Chart
4.3 Matching with Lumped Elements
4.3.1 Analytic Design Technique
4.3.2 Bipolar UHF Power Amplifier
4.3.3 MOSFET VHF High-Power Amplifier
4.4 Matching with Transmission Lines
4.4.1 Analytic Design Technique
4.4.2 Equivalence between Circuits with
Lumped and Distributed Parameters
4.4.3 NarrowBand Microwave Power Amplifier
4.4.4 Broadband UHF High-Power Amplifier
4.5 Types of Transmission Lines
4.5.1 Coaxial Line
4.5.2 Stripline
4.5.3 Microstrip Line
4.5.4 Slotline
4.5.5 Coplanar Waveguide
References
5 Power Transformers, Combiners, and Couplers
5.1 Basic Properties
5.1.1 Three-Port Networks
5.1.2 Four-Port Networks
5.2 Transmission-Line Transformers and Combiners
5.3 Baluns
5.4 Wilkinson Power Dividers/Combiners
5.5 Branch-Line Hybrid Couplers
5.6 Coupled-Line Directional Couplers
References
6 Power Amplifier Design Fundamentals
6.1 Main Characteristics
6.2 Power Gain and Stability
6.3 Stabilization Circuit Technique
6.3.1 Frequency Domains of BJT Potential
Instability
6.3.2 Frequency Domains of MOSFET Potential
Instability
6.3.3 Some Examples of Stabilization Circuits
6.4 Basic Classes of Operation: A, AB, B, and C
6.5 Load Line and Output Impedance
6.6 Classes of Operation Based on Finite Number of Harmonics
6.7 Mixed-Mode Class B and Nonlinear Effect of Collector
Capacitance
6.8 Load-Pull Characterization
6.9 Linearity
6.10 Push-Pull and Balanced Power Amplifiers
6.10.1 Basic Push-Pull Configurations
6.10.2 Balanced Power Amplifiers
6.11 Bias Circuits
6.12 Practical Aspect of RF and Microwave Power Amplifiers
References
7 High-Efficiency Power Amplifiers
7.1 Overdriven Class B
7.2 Class-F Circuit Design
7.2.1 Idealized Class-F Mode
7.2.2 Class F with Maximally Flat Waveforms
7.2.3 Class F with Quarterwave Transmission
Line
7.2.4 Effect of Saturation Resistance
7.2.5 Load Networks with Lumped and
Distributed Parameters
7.2.6 Design Examples of Class-F Power
Amplifiers
7.3 Inverse Class F
7.3.1 Idealized Inverse Class-F Mode
7.3.2 Inverse Class F with Quarterwave
Transmission Line
7.3.3 Load Networks with Lumped and
Distributed Parameters
7.3.4 Design Examples of Inverse Class-F Power
Amplifiers
7.4 Class E with Shunt Capacitance
7.4.1 Optimum Load-Network Parameters
7.4.2 Effect of Saturation Resistance, Finite
Switching Time, and Nonlinear Shunt Capacitance
7.4.3 Optimum, Nominal, and Off-Nominal
Class-E Operation
7.4.4 Load Network with Transmission Lines
7.4.5 Practical Class-E Power Amplifiers
7.5 Class E with Finite DC-Feed Inductance