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Quantum-limited shot noise and quantum interference in graphene based Corbino disk Grzegorz Rut and Adam Rycerz Marian Smoluchowski Institute of Physics, Jagiellonian University, Reymonta 4, PL–30059 Krako´w, Poland (Dated: January 31, 2014) This is a theoretical study of finite voltage effects on the conductance, the shot noise power, andthethirdcharge-transfercumulantforgraphene-basedCorbinodiskinthepresenceofexternal magneticfields. Periodicmagnetoconductanceoscillations,predictedinRefs.[1,2],becomeinvisible forrelativelysmallsource-drainvoltages,asthecurrentdecaysrapidlywithmagneticfield. Quantum interference still governs the behavior of higher charge-transfer cumulants. 4 PACSnumbers: 72.80.Vp,73.63.b,75.47.-m 1 0 2 I. INTRODUCTION with σ = (4/π)e2/h being the universal conductivity 0 of graphene. Analogous behavior is predicted for higher n a The Corbino geometry, in which electric current is charge-transfer cumulants [2, 16]. J passed through a disk-shaped sample area attached to Inthispaper,weextendtheanalysisbeyondthelinear- 0 two circular leads [see Fig. 1(a), the inset], was pro- responseregimebycalculatingtheconductance,theFano 3 posed over a century ago [3, 4] to measure the magne- factor quantifying the shot-noise power, and -factor F R toresistancewithoutgeneratingtheHallvoltage,making quantifying the third charge-transfer cumulant, in a sit- ] l a significant step towards understanding the nature of uation when finite source-drain voltage is applied to l a charge transport in ordinary solids [5]. An interest in graphene-basedCorbinodiskintheshot-noiselimit. Our h suchageometryhasreappearedduetothefabricationof resultsshowthatalbeittheconductanceoscillationsvan- - GaAs/AlGaAsheterostructures[6,7]. Also,afterthedis- ish rapidly with the voltage and magnetic field, and s F e covery of high-temperature superconductivity, Corbino still oscillate periodically and their mean values ap- m R measurements have provided a valuable insight into the proach 0.76 and 0.55 (respectively) in the . vortex dynamics, as the influence of sample edges was high-fielFd∞lim(cid:39)it. In the rRem∞ai(cid:39)ning parts of the paper, we t a eliminated [8]. first(inSectionII)recallbrieflytheformulaallowingone m In the context of graphene, various transport proper- to determine the conductance and other charge-transfer - ties of Corbino disks were recently studied experimen- characteristics of graphene-based Corbino disk at arbi- d tally [9–11] and theoretically [1, 2, 12]. Next to the case trary voltages and magnetic fields. Next, in Section III, n of a rectangular strip geometry [13, 14], the Corbino ge- our numerical results are presented in details. The con- o ometry provides another situation when transport prop- clussions are given in Section IV. c [ erties of a graphene nanodevice can be investigated ana- lytically [1], by solving the scattering problem for Dirac 2 fermions, at arbitrary dopings and magnetic fields. In v 7 particular,mode-matchinganalysisfortheeffectiveDirac II. CHARGE-TRANSFER CUMULANTS 4 equationgivestransmissionprobabilitiesforundopeddisk 2 in graphene monolayer [1, 2] Intheshot-noiselimiteV k T,withV beingthe 7 eff B eff (cid:29) 1. T(0) = 1 , (1) effective source-drain voltage [17], the charge Q passing j cosh2[(j+Φ/Φ )ln(R /R)] a nanoscale device in a time interval ∆t is a random 0 0 o i variable, with the characteristic function Λ(χ) given by 4 where j = 1, 3,... is the angular-momentum quan- the Levitov formula [18] 1 ±2 ±2 tum number labeling normal modes in the leads, Φ = : v π(R2 R2)B is the flux piercing the disk in the uniform Xi magone−ticifield(B),Ri istheinnerradius,Ro istheouter lnΛ(χ)≡ ln(cid:104)exp(iχQ/e)(cid:105)= ar rdaedriivuast,ioanndofΦE0q.=(1)2,(thh/eel)imlni(tRoof/hReia)v.ilyM-doorpeoevdegr,raipnhetnhee 4 ∆t µ0+(cid:90)eV2effd(cid:15) (cid:88)ln(cid:2)1+(cid:0)eiχ 1(cid:1)T ((cid:15))(cid:3), (3) leads [13] is imposed. Summing Tj-s over the normal (σ,v) h − j mcoonddeuscitnantchee,lienadtsh,eonlienefianrd-rsetshpaotnstehereLgainmdea,usehro-Bwu¨stptiekreir- µ0−eV2eff j odic(approximatelysinusoidal)oscillationswiththeflux where X denotes the expectation value of X, the fac- Φ, with Φ0 being the oscillations period. Additionally, tor 4 (cid:104) (cid:105)accounts for spin and valley degeneracies, and the disk conductance averaged over a single period re- (σ,v) we have assumed V > 0 without loss of a generality. stores the pseudodiffusive value [15] eff The average charge Q , as well as any charge-transfer (cid:104) (cid:105) 2πσ cumulant Qm (Q Q )m , may be obtained by 0 Gdiff = ln(R /R), (2) subsequent(cid:104)(cid:104)diffe(cid:105)r(cid:105)e≡nti(cid:104)ation−o(cid:104)f l(cid:105)nΛ((cid:105)χ) with respect to iχ o i 2 at χ=0. In particular, the conductance where M(a,b,z) and U(a,b,z) are the confluent hyper- geometric functions [19, 20]. (cid:12) Q e ∂lnΛ(cid:12) It can be shown that in the zero-energy limit ((cid:15) 0) G(Veff)= V(cid:104) ∆(cid:105)t = V ∆t ∂(iχ)(cid:12)(cid:12) Eq. (7) simplifies to Eq. (1). Similarly, in case th→e en- eff eff χ=0 ergy is adjusted to a higher Landau level (LL), namely, 4(σ,v)e2 (cid:88)(cid:10)T (cid:11) , (4) (cid:15)˜2/(4β) = n = 1,2,..., the transmission probability for ≡ h j j |(cid:15)−µ0|(cid:54)eV2eff j-thnormalmode(inthehigh-fieldlimit)isT(n) =T(0) j j 2n [1]. In effect, periodic magnetoconductance oscillati−ons where transmission probabilities T ((cid:15)) are averaged over the energy interval (cid:15) µ (cid:54)eV j/2. Analogously, inthelinear-responseregimearefollowedbysimilaroscil- | − 0| eff lations of and (for analytic Fourier decompositions, F R (V )= Q2 (cid:14) Q2 see Ref. [16]), with the mean values eff Poisson F (cid:104)(cid:104) (cid:105)(cid:105) (cid:104)(cid:104) (cid:105)(cid:105) (cid:80) (cid:10) (cid:11) T (1 T ) =1/3 and =1/15, (12) = j (cid:80)j (cid:10) −(cid:11) j |(cid:15)−µ0|(cid:54)eV2eff (5) Fdiff Rdiff T j j |(cid:15)−µ0|(cid:54)eV2eff providedthediskisundopedorthedopingisadjustedto anyhigherLL.Thesearethebasicfeaturesofanonstan- and dard quantum interference phenomenon, which may ap- (V )= Q3 (cid:14) Q3 pear when charge transport in graphene (or other Dirac R eff (cid:104)(cid:104) (cid:105)(cid:105) (cid:104)(cid:104) (cid:105)(cid:105)Poisson system) is primarily carried by evanescent modes [21]. (cid:80) (cid:10) (cid:11) T (1 T )(1 2T ) = j (cid:80)− (cid:10)j (cid:11) − j |(cid:15)−µ0|(cid:54)eV2eff , (6) T j j |(cid:15)−µ0|(cid:54)eV2eff III. RESULTS AND DISCUSSION with Qm the value of m-th cumulant for the Poisson (cid:104)(cid:104) (cid:105)(cid:105) Several factors, not taken into account in the above Poissonian limit (T ((cid:15)) 1), given by a generalized j Schottky formula Qm (cid:28) =em 1 Q . analysis, may make it difficult to confirm experimentally Poisson − (cid:104)(cid:104) (cid:105)(cid:105) (cid:104) (cid:105) the effects which are described in Refs. [1, 2]. These in- Inthecaseofgraphene-basedCorbinodisk,theenergy- cludetheinfluenceofdisorder,electron-phononcoupling, dependent transmission probabilities are given by [1] or electron-electron interactions; i.e., the factors which 16((cid:15)˜2/β)2j 1 (cid:20)Γ(γ )(cid:21)2 areabsent(orsuppressed)inseveralanalogsofgraphene | − | j Tj((cid:15))= (cid:15)˜2RR (X2+Y2) Γ(α ↑) , (7) [22–24], and which are beyond the scope of this paper. i o j j j↑ Anotherpotentialobstacleisrelatedtothefactthatres- where (cid:15)˜ = (cid:15)/((cid:126)vF) with vF 106m/s the energy- onances with distinct LLs shrink rapidly with increasing independent Fermi velocity, β =(cid:39) eB/(2(cid:126)), Γ(z) is the field, making the linear-response regime hard to access. Euler Gamma function, and Here we point out that theoretical discussion of charge transport through graphene-based Corbino disk still can 1(cid:20) (cid:15)˜2 (cid:21) be carried out, in a rigorous manner, beyond the linear- α = 2(j+m + j m +1) , js s s 4 | − | − β response regime. Forthepurposeofnumericaldemonstration,wechoose γ = j m +1, (8) js s | − | R /R = 5, and focus on the vicinity of the Dirac point o i with ms = ±12 for the lattice pseudospin s =↑,↓. The by setting µ0 = 0 [25]. The corresponding oscillation remaining symbols in Eq. (7) are defined as magnitudes, in the linear-response limit, are [16] Xj =wj−↑↑+zj,1zj,2wj−↓↓, ∆G(Veff →0)=0.11Gdiff, (13) Yj =zj,2wj+ −zj,1wj+ , (9) ∆F(Veff →0)=0.27, ∆R(Veff →0)=0.14. ↑↓ ↓↑ where For any finite V and any flux Φ, the averages in Eqs. eff (4), (5), and (6) can be calculated numerically after sub- wj±ss(cid:48) =ξj(1s)(Ri)ξj(2s(cid:48))(Ro)±ξj(1s)(Ro)ξj(2s(cid:48))(Ri), stituting Tj((cid:15)) given by Eq. (7). Our main results are zj,1 =[2(j+sj)]−2sj, (10) presented in Figs. 1, 2, and 3. First, in Figs. 1(a)–(c), we have depicted the values z =2(β/(cid:15)˜2)sj+1/2, j,2 taken by G(V ), (V ), and (V ), when the flux eff eff eff F R is varied in separate intervals, each of which having Φ with s 1sgn(j). The functions ξ(1)(r) and ξ(2)(r) in 0 j ≡ 2 js js width, namely the first line of Eq. (10) are given by (m 1)Φ Φ m Φ , m =1,2,.... (14) Φ 0 Φ 0 Φ ξj(νs)(r)=((cid:15)˜r)|j−m(cid:26)s|eMxp((α−β,rγ2/2,)βr2), if ν=1, The two−shaded≤area≤s are for mΦ = 3 and mΦ = 7; js js (11) distinctsolidline(ateachpanel)depictsthecorrespond- × U(αjs,γjs,βr2), it ν=2, ing charge-transfer characteristic at Φ = 0. It is clear 3 (a) (a) 1.5 4.0 Ri Ro � = 0 eVe↵Ri/(~vF)=0 h] 3 ] 2e/ �/� 0  2/h 1.0 4 e [ 2  4 2 G 2.0 6�/�07 G[ 0.5 0.25 0.05 0.01 ·10�3 1.25 0 0 5 (b) 6�/�07 (b) =1.2 0.8 Ri ↵ 0.6 eVe ~vF 0.25 5 03� 0 1 F 2�/ F 0. 0.01 2· � 0.4 0 0 3 0.4 �=0 0 0.2 (c) (c) 0.8 0.6 6�/�07 = 1.25 R i R 0.4 eVe↵~v F 0.25 5 R 0 3 0.4 0. 1 0� 0 1 0. 2· 0.2 2 0 �/ � 0 0 �=0 3 0 0 2 4 6 8 0 2 4 6 8 eVe↵Ri/(~vF) �/�0 FIG. 1: Variation ranges for the finite-voltage conductance FIG. 2: Magnetic flux effect on the finite-voltage conduc- (a), Fano factor (b), and R-factor (c) in cases the magnetic tance (a), Fano factor (b), and R-factor (c). The effective flux Φ piercing the disk area R <r <R [see inset in panel source-drain voltage V is specified for each curve. i o eff (a)]isvariedinthelimitsgivenbyEq.(14)withm =3and Φ m =7. The values for Φ=0 are also shown. Φ data presented in Fig. 2, where the conductance and other charge-transfer characteristics are plotted directly fmroamgneFtiigc.fi1eldthpartovGid(eVdefft)haist estVreoffn(cid:46)gly(cid:126)vsFu/pRprie.sFedorbhyightheer aGs(Vfueffn)ctdioencsayosf rΦe,laftoivreslyelefcatsetdwviatlhueΦs ofofrVaeffn.y AVelfftho=ug0h, Veff the ballistic transport regime is entered, leading to suchthatmagnetoconductanceoscillationsarevisibl(cid:54)efor GeV(eVffeff(cid:29)) ∝(cid:126)vFV/effR,i Flim(Vite.ff)M(cid:46)ost0.r2e,maanrdkaRbl(yV,efffo)r 0(cid:39)<0eiVneffth(cid:46)e sehVoeffw(cid:28)per(cid:126)ivoFdi/cRoisocinlllayti[osenesFatigh.i2g(ha)fi]e,lFds(Vfoerff)arabnidtraRry(VVeffeff) (cid:126)vF/Ri andthehighestdiscussedfluxinterval(mΦ =7), [see Figs. 2(b) and 2(c)]. In order to describe these os- (Veff) and (Veff) take the values from narrow ranges cillations in a quantitative manner, we have calculated F R around 0.7 and 0.5 [see Figs. 1(b) and 1(c)], numerically the average values of (V ) and (V ), coincidinFg(cid:39)with recentRfin(cid:39)dings for transport near LLs in as well as the corresponding oscillaFtioneffmagnituRdes,efffor graphene bilayer [26]. severalconsecutivefluxintervalsdefinedbyEq.(14),and These observations are further supported with the depicted them as functions of the interval number (m ) Φ 4 A striking feature of the results presented in Table I (a) is the total lack of effects of both the radii ratio R /R o i and the source-drain voltage V on limiting values of eff 0.6 and . (In contrast, ∆ and ∆ strongly Fde∞pends oRn∞R /R.) This factFal∞lows us tRo∞expect the o i R quantum-limited shot noise, characterized by 0.4 | 1/3 0.76 and 0.55, (16) F F∞ (cid:39) R∞ (cid:39) to appear generically in graphene-based nanosystems at 0.2 high magnetic fields and for finite source-drain voltages, F1 1/15 similarly as pseudodiffusive shot-noise (with = 1/3 0.6 Fdiff and =1/15) appears generically at the Dirac point 0 R1 in thRedliiffnear-response limit. R 0.4 (b) | 0.3 F IV. CONCLUSIONS 0.2 R (c) � 0.2 0 We have investigated the finite-voltage effects on the | 0 0.2 0.4 0.6 magnetoconductance, as well as the magnetic-field de- F 1/m pendence of the shot-noise power and the third charge- � � transfer cumulant, for the Corbino disk in ballistic 0.1 graphene. Periodic magnetoconductance oscillations, earlierdiscussedtheoreticallyinthelinear-responselimit [1, 2], are found to decay rapidly with increasing field at 0 finite voltages. To the contrary, the and -factors, F R 1 3 5 7 9 11 quantifying the higher charge-transfer cumulants, show m� periodic oscillations for arbitrary high fields, for both the linear-response limit and the finite-voltage case. Al- FIG. 3: Average values X (a) and oscillation magnitudes though such oscillations must be regarded as signa- ∆X =max(X)−min(X)(b),withX =F(squares)andX = tures of a nonstandard quantum interference phenom- R (circles), calculated for several consecutive flux intervals ena, specific for graphene-based disks near zero doping defined by Eq. (14). Open (or closed) symbols at each panel (and having counterparts for higher Landau levels), the correspond to eVeffRi/((cid:126)vF)=0.25 (or 0.5). Lines in panels parameter-independent mean values of 0.76 and (a) and (b) depict the linear-response values given by Eqs. 0.55 suggest the existence of aFg∞en(cid:39)eric, finite- (12) and (13). Panel (c) illustrates the scaling of F and R Rvo∞ltag(cid:39)eandhigh-fieldanalogofafamiliarpseudodiffusive with 1/m →0 (see the main text for details). Φ charge transport regime in ballistic graphene. Wehope ourfindings willmotivatesome experimental attempts to understand the peculiar nature of quantum TABLEI: Limitingvaluesofperiod-averagedF,Randoscil- lation magnitudes ∆F, ∆R obtained by least-squares fitting transport via evanescent waves in graphene, which man- of the parameters in Eq. (15). Numbers in parentheses are ifests itself not only in the well-elaborated multimode standard deviations for the last digit (see also Ref. [27]). case of wide rectangular samples [13–15], but also when averylimitednumberofnormalmodescontributetothe R /R F ∆F R ∆R o i ∞ ∞ ∞ ∞ systemconductanceandothercharge-transfercharacter- 2.5 0.761(1) 0.0014(1) 0.552(3) 0.0064(2) istics, as in the case of Corbino disks with large radii 5.0 0.763(1) 0.061(1) 0.555(2) 0.017(1) ratios R /R 1. Albeit the discussion is, in principle, o i (cid:29) 10 0.771(5) 0.191(2) 0.56(1) 0.170(2) limited to the system with a perfect circular symmetry and the uniform magnetic field, special features of the results, in particular the fact that mean values of the F in Figs. 3(a), 3(b). Next, the scaling with 1/m 0 is and -factorsareinsensitivetotheradiiratioandtothe Φ → R performed by least-squares fitting of the approximating voltage, allow us to believe that quantum-limited shot formula noise as well as the signatures of quantum interference should appear in more general situations as well. (cid:18) (cid:19)2 1 Y [m ] Y +A , (15) Φ Y (cid:39) ∞ mΦ Acknowledgments for Y = , , ∆ , and ∆ . The examples of [m ] Φ F R F R F and [m ] are presented in Fig. 3(a); the values of Y TheworkwassupportedbytheNationalScienceCen- Φ for dRifferent ratios R /R are listed in Table I [27]. ∞ treofPoland(NCN)viaGrantNo.N–N202–031440,and o i 5 partly by Foundation for Polish Science (FNP) under formed using the PL-Grid infrastructure. the program TEAM. The computations were partly per- [1] A. Rycerz, Phys. Rev. B 81, 121404(R) (2010). [18] Yu.V. Nazarov and Ya.M. Blanter, Quantum Transport: [2] M.I. Katsnelson, Europhys. Lett. 89, 17001 (2010). IntroductiontoNanoscience,CambridgeUniversityPress [3] L. Boltzmann, Phil. Mag. 22, 226 (1886). (Cambridge, 2009). [4] E.P. Adams, Proc. Am. Phil. Soc. 54, 47 (1915). [19] M.AbramowitzandI.A.Stegun,eds.,HandbookofMath- [5] Foracomprehensivereviewofearly-stageresearches,see: ematicalFunctions (DoverPublications,Inc.,NewYork, S. Galdamini and G. Giuliani, Ann. Sci. 48, 21 (1991). 1965), Chapter 13. [6] G.Kirczenow,J.Phys.: Condens.Matter6,L583(1994); [20] Without loss of generality, we choose B >0. For B <0 S. Souma and A. Suzuki, Phys. Rev. B 58, 4649 (1998). one gets T (B)=T (−B). j −j [7] R.G. Mani, Europhys. Lett. 36, 203 (1996). [21] E.B. Kolomeisky, H. Zaidi, and J.P. Straley, Phys. Rev. [8] S.F.W.R.Rycroftetal.,Phys.Rev.B60,757(R)(1999). B 85, 073404 (2012). [9] J. Yan and M.S. Fuhrer, Nano Lett. 10, 4521 (2010). [22] A. Singha et al., Science 332, 1176 (2011). [10] C. Faugeras et al., ACS Nano 4, 1889 (2010). [23] Z.K. Liu et al., dx.doi.org/10.1126/science.1245085. [11] Y. Zhao et al., Phys. Rev. Lett. 108, 106804 (2012). [24] S. Borisenko at al., arXiv:1309.7978 (unpublished). [12] Z.Khatibi,H.Rostami,andR.Asgari,Phys.Rev.B88, [25] We notice that this supposition does not affect the uni- 195426 (2013). versalityoftheresults.ForanyeV >2|µ |,inthehigh- eff 0 [13] J. Tworzyd(cid:32)lo et al., Phys. Rev. Lett. 96, 246802 (2006). field limit, the leading contributions to averages in Eqs. [14] E. Prada et al., Phys. Rev. B 75, 113407 (2007). (5) and (6) originate from a small vicinity of the Dirac [15] A.Rycerz,P.Recher,andM.Wimmer,Phys.Rev.B80, point. The same reasoning applies to higher LLs. 125417 (2009). [26] G. Rut and A. Rycerz, Phys. Rev. B 89, 045421 (2014). [16] A. Rycerz, Acta Phys. Polon. A 121, 1242 (2012). [27] WehavefixedthevoltageateVeffRi/((cid:126)vF)=0.5forthe [17] We assume the inner (or the outer) lead is characterized data presented. No statistically signifficant effects were by the electrochemical potential µ −eV /2 (or µ + detected for other V -s in the 1/m →0 limit. 0 eff 0 eff Φ eV /2); the actual source-drain voltage may differ from eff V due to charge-screening effects. eff

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