Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (E M I S Datareviews Series) PDF
Preview Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (E M I S Datareviews Series)
P R O P E R J I E S . P R O C E S S I NG A ND A P P L I C A T I O NS OF G a l l i um N i t r i de a nd R e l a t ed S e m i c o n d u c t o rs E d i t ed by J A M ES H E D G AR Kansas State University, USA S A M U EL ( T O B Y) S T R I TE Uniphase Laser Enterprise, AG, Switzerland a nd I S A MU A K A S A K I, H I R O S H I A M A NO a nd C H R I S T I AN W E T Z EL Meijo University, Japan IEE I N S P EC Published by: INSPEC, The Institution of Electrical Engineers, London, United Kingdom © 1999: The Institution of Electrical Engineers This publication is copyright under the Berne Convention and the Universal Copyright Convention. All rights reserved. Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act, 1988, this publication may be reproduced, stored or transmitted, in any forms or by any means, only with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms of licences issued by the Copyright Licensing Agency. Inquiries concerning reproduction outside those terms should be sent to the publishers at the undermentioned address: The Institution of Electrical Engineers, Michael Faraday House, Six Hills Way, Stevenage, Herts. SG1 2AY, United Kingdom While the author and the publishers believe that the information and guidance given in this work are correct, all parties must rely upon their own skill and judgment when making use of them. Neither the author nor the publishers assume any liability to anyone for any loss or damage caused by any error or omission in the work, whether such error or omission is the result of negligence or any other cause. Any and all such liability is disclaimed. The moral right of the author to be identified as author of this work has been asserted by him/her in accordance with the Copyright, Designs and Patents Act 1988. British Library Cataloguing in Publication Data A CIP catalogue record for this book is available from the British Library ISBN 0 85296 953 8 Printed in England by Short Run Press Ltd., Exeter Introduction Despite decades of study, only recently has gallium nitride changed from a research curiosity to a commercially important semiconductor. This change was brought about by a rapid progression of improvements in epitaxial growth, demonstration of p-type conductivity, and the fabrication of commercially viable devices. The fabrication of highly efficient blue and green light emitting diodes and diode lasers is driving the development of gallium nitride technology, but the robust and versatile properties of gallium nitride make it an excellent candidate for high speed and high power electronics, cold cathode emitters, and solar blind ultraviolet light detectors. Interest in gallium nitride has exploded in the past few years, leading to an expansion of its potential applications on an almost monthly basis. (This broad spectrum of applications has lead some to predict that GaN will eventually become the third most important semiconductor system, behind GaAs and Si.) The 1994 volume Properties of Group III Nitrides has become a standard reference found on the shelves of most laboratories in this field. However, the subsequent evolution of GaN R&D made it desirable to organise a much-expanded volume to include materials synthesis and analysis techniques, device fabrication technology, and device structures and operating characteristics, in addition to updates on the previously covered mechanical, thermodynamic, electrical and optical properties. Since the technology of gallium nitride is rapidly advancing and is constantly changing, the Datareviews were written to provide a context for understanding new reports in the literature, by including introductory background, universally held principles, and principal issues remaining to be resolved. A reader should be able to follow the current literature after reading a particular Datareview. The authors for the Datareviews were invited to contribute not only on the basis of their expertise, but for their original perspectives. Since the technology is still developing, some aspects remain unresolved. It is the editor's hope that the selection of authors reviewing these aspects will provide a perspective different from that presented in other recently published books on GaN. I am grateful to my co-editors for their help in selecting authors, refereeing the Datareviews, and generally increasing my awareness of the wide range of studies on gallium nitride. We hope that this book will inspire researchers to develop new insights into gallium nitride properties and applications. My thanks to the over 120 referees involved in verifying the accuracy of these Datareviews. I hope that all the referees made discoveries as they read them. Last, my appreciation to John Sears for encouraging me to edit this book and the IEE for giving me the opportunity. James H Edgar Kansas State University January 1999 Contributing Authors I. Adesida University of Illinois at Urbana-Champaign, 127 Microelectronics Lab. B4.1-B4.3 208 N Wright Street, Urbana, IL 61801, USA I. Akasaki Meijo University, Department of Electrical and Electronic Engineering A3.2,A4.2,A5.1,A5.2 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan A7.11,A8.3,C2.5 H. Amano Meijo University, Department of Electrical and Electronic Engineering A5.1,A7.11,C5.3 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan J. Bauer Fraunhofer IAF, Tullastrasse 72 C3.4 D-79108 Freiburg i. Br., Germany M. Bremser Aixtron AG, Kackerstrasse 15-17 A5.3 D-52072 Aachen, Germany G. Bulman Cree Research, Inc., 4600 Silicon Drive C3.3, C5.5 Durham, NC 27703-8475, USA J. Burm Department of Electronic Engineering, Sogang University C4.1-C4.4 Seoul 121-742, South Korea W.E. Carlos Naval Research Laboratory, Code 6862, 4555 Overlook Ave. SW A3.10 Washington, DC 20375-5347, USA T.S. Cheng University of Nottingham, Department of Physics A9.1-A9.3 University Park, Nottingham, NG7 2RD, UK R.F. Davis North Carolina State University, Department of Materials Science and A7.8,B2.2,B2.10,C1.3 Engineering, Box 7907, Yarborough Drive, Rayleigh, NC 27695-7907, USA H. Dieringer Cree Research, Inc., 4600 Silicon Drive C3.3, C5.5 Durham, NC 27703-8475, USA J. Domagala Polish Academy of Sciences, UNIPRESS, High Pressure Research Center A1.2 Sokolowska 29137, Warsaw 01-142, Poland K. Domen Fujitsu Laboratories Ltd, Optical Semiconductor Devices Lab. C5.4 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan K. Doverspike Cree Research, Inc., 4600 Silicon Drive C3.3, C5.5 Durham, NC 27703-8475, USA L.F. Eastman Cornell University, Department of Electronic Engineering C4.2, C4.3 425 Phillips Hall, Ithaca, NY 14853-5401, USA J.H. Edgar Kansas State University, Department of Chemical Engineering Executive Editor 105 Durland Hall, Manhattan, KS 66506-5102, USA J. Edmond Cree Research, Inc., 4600 Silicon Drive C3.3, C5.5 Durham, NC 27703-8475, USA T. Egawa Research Center for Micro-structure Devices C3.5 Nagoya Institute of Technology Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan D. Emerson Cree Research, Inc., 4600 Silicon Drive C3.3 Durham, NC 27703-8475, USA CT. Foxon University of Nottingham, Department of Physics A8.4, A8.5 University Park, Nottingham, NG7 2RD, UK B.Gil CNRS, Scientifique Universite de Montpellier II A3.1,A3.3,A3.4,A4.1 Groupe d'Etude des Semiconducteurs, Case courrier 074, 34095 Montpellier Cedex 5, France W.K. Goetz Xerox PARC, EML, 3333 Coyote Hill Rd. A3.8 Palo Alto, CA 94304, USA E.M. Goldys Macquarie University, Department of Physics A4.3-A4.5 Semiconductor Science and Technology Labs., Sydney, NSW 2109, Australia I. Grzegory Polish Academy of Sciences, High Pressure Research Center Bl.1 ul. Sokolowska 29/37, 01-142 Warsaw, Poland K. Haberern Cree Research, Inc., 4600 Silicon Drive C5.5 Durham, NC 27703-8475, USA A. Hangleiter Universitaet Stuttgart, 4 Physikalisches Institut C2.2-C2.4, C5.3 D-70550 Stuttgart, Germany A.D. Hanser North Carolina State University, Department of Materials Science and A7.8, B2.2 Engineering, Box 7907, Yarborough Drive, Rayleigh, NC 27695-7907, USA E.S. Hellman Lucent Technologies, 600 Mountain Ave. B2.4 #lD-435, PO Box 636, Murray Hill, NJ 07974, USA K. Hiramatsu Mie University, Department of Electrical and Electronic Engineering B2.6,B2.9,C2.1 1515 Kamihama, Tsu, Mie 514-8507, Japan T. Honda Tokyo Institute of Technology, Precision and Intelligence Lab. C5.6 Yokohama, Japan K.Iga Tokyo Institute of Technology, Precision and Intelligence Lab. C5.6 Yokohama, Japan H.X. Jiang Kansas State University, Department of Physics A3.5, A3.6 Cardwell Hall, Manhattan, KS 66506, USA N.M. Johnson Xerox PARC, 3333 Coyote Hill Rd. A8.8 Palo Alto, CA 94304, USA M. Kamp University of UIm, Department of Optoelectronics B2.8 UIm D-89069, Germany H. Katayama-Yoshida Osaka University, Department of Condensed Matter Physics A8.6 Institute of Scientific and Industrial Res., Osaka 567, Japan Y. Kawaguchi Mie University, Department of Electrical and Electronic Engineering C2.1 1515 Kamihama, Tsu, Mie 514-8507, Japan S.W. King North Carolina State University, Department of Physics C1.3 Raleigh, NC 27695, USA M. Koike Toyoda Gosei Co. Ltd., 1st New Market Devel. HQ, Tech. Div. C3.2 1 Nagahata, Ochiai, Haruhi-cho, Nishikasugai-gun, Aichi-pref. 452, Japan H.S. Kong Cree Research, Inc., 4600 Silicon Drive C3.3, C5.5 Durham, NC 27703-8475, USA S. Krukowski Polish Academy of Sciences, High Pressure Research Center A1.4 ul. Sokolowska 29/37, Warsaw 01-142, Poland M. Kuball Brown University, Box M, Center for Advanced Materials Research C5.5 182 Hope Street, Providence, RI02912, USA T.F. Kuech University of Wisconsin, Department of Chemical Engineering B2.7 1415 Engineering Drive, Madison, WI53706, USA A. Kuramata Fujitsu Laboratories Ltd, Optical Semiconductor Devices Lab. C5.4 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan N. Kuwano Kyushu University 39, Department of Applied Science for A7.7 Electronics and Materials, Interdisc. Grad. School of Engineering Science, Kasuga, Fukuoka 816, Japan M. Leonard Cree Research, Inc., 4600 Silicon Drive C3.3 Durham, NC 27703-8475, USA M. Leroux CNRS, Scientifique Universite de Montpellier II A3.1,A3.3,A3.4,A4.1 Groupe d'Etude des Semiconducteurs, Case courrier 074, 34095 Montpellier Cedex 5, France M. Leszczynski Polish Academy of Sciences, High Pressure Research Center A1.1,A1.2,A1.4,A7.9 ul. Sokolowska 29/37, Warsaw 01-142, Poland A7.10,B2.3 Z. Liliental- Weber Lawrence Berkeley National Laboratory, Center for Advanced Materials A7.5 Materials Science Division MS 62/203, 1 Cyclotron Rd., Berkeley, CA 94720, USA J.Y. Lin Kansas State University, Department of Physics A3.5, A3.6 Cardwell Hall, Manhattan, KS 66506, USA D.C. Look Wright State University, University Research Center A3.7 3640 Colonel Glenn Hwy, Dayton, OH 45435, USA S. Mohney Pennsylvania State University, Department of Materials Science and C1.1,C1.2 Engineering, 221 Steidle Building, University Park, PA 16802, USA K.L. More Oak Ridge National Laboratory, Oak Ridge C3.3 TN 37830, USA S. Nakamura Nichia Chemical Industries Ltd, R&D Department 491 C3.1,C5.1 Oka Kaminaka, PO Box 6, Anan, Tokushima 774, Japan O.-H. Nam North Carolina State University, Department of Materials Science and B2.10 Engineering, Box 7907, Yarborough Drive, Rayleigh, NC 27695-7907, USA J. Nause Cermet Inc., 1019 Collier Road, Suite Cl B1.3 Atlanta, GA 30318, USA G. Negley Cree Research, Inc., 4600 Silicon Drive C3.3 Durham, NC 27703-8475, USA RJ. Nemanich North Carolina State University, Department of Physics A3.9,C1.3 Raleigh, NC 27695, USA J. Neugebauer Xerox PARC, 3333 Coyote Hill Rd. A8.1,A8.2,A8.7,A8.8 Palo Alto, CA 94304, USA K. Nishino Tokushima University, Department of Electrical Engineering B1.2 Minami-Josanjima, Tokushima 770, Japan J.E. Northrup Xerox Palo Alto Res., Xerox Palo Alto Research Center A7.2 3333 Coyote Hill Rd., Palo Alto, CA 94304, USA A. Nurmikko Brown University, Box M, Center for Advanced Materials Research C5.5 182 Hope Street, Providence, RI02912, USA H. Okumura Electrotechnical Laboratory, Materials Science Division B2.5 1-1-4 Umezoni, Tsu, Ibaraki 305, Japan J.W. Orton University of Nottingham, Department of Physics A8.4, A8.5 University Park, Nottingham, NG7 2RD, UK J. Pankove University of Colorado, Department of Electrical and Computer C5.7 Engineering, Boulder, CO 80309-0425, USA A.T. Ping University of Illinois at Urbana-Champaign, 127 Microelectronics Lab. B4.2 208 N Wright Street, Urbana, IL 61801, USA A. Polian Universite Pierre et Marie Curie - B 77, Physique des Milieux Condenses A1.3 4 Place Jussieu, F 75252 Paris Cedex 05, France S. Porowski Polish Academy of Sciences, UNDPRESS, High Pressure Research Center A1.4,B1.1,B2.3 Sokolowska 29137, Warsaw 01-142, Poland K. Pressel Institute for Semiconductor Physics, Walter-Korsing-Str. 2 A8.9 D-15230 Frankfurt (Oder), Germany P. Prystawko Polish Academy of Sciences, UNIPRESS, High Pressure Research Center A1.2,A7.10,B2.3 Sokolowska 29137, Warsaw 01-142, Poland J.M. Redwing Epitronics/ATMI, 21002 N 19th Ave., Suite 5 B2.7 Phoenix, AZ 85022, USA H. Riechert Siemens AG, Corporate R&D B2.8 Munich, Germany L.T. Romano Xerox Palo Alto Res., Xerox Palo Alto Research Center A7.1-A7.4,A7.6 3333 Coyote HiU Rd., Palo Alto, CA 94304, USA S. Sakai Tokushima University, Department of Electrical Engineering B1.2 Minami-Josanjima, Tokushima 770, Japan P. Schlotter Fraunhofer IAF, Tullastrasse 72 C3.4 D-79108 Freiburg i. Br., Germany J. Schneider Fraunhofer IAF, Tullastrasse 72 C3.4 D-79108 Freiburg i. Br., Germany F. Scholz Universitaet Stuttgart, 4 Physikalisches Institut C2.2 D-70550 Stuttgart, Germany W. Shan Oklahoma State University, 413 NRC, Center for Laser Res. and C5.2 Department of Physics, Stillwater, OK 74078-3038, USA S.T. Sheppard Cree Research, Inc., 4600 Silicon Drive C5.5 Durham, NC 27703-8475, USA D. Slater Cree Research, Inc., 4600 Silicon Drive C3.3 Durham, NC 27703-8475, USA G.M. Smith Epitronics (an Advanced Technology Materials Inc. company) C5.8 7 Commerce Dr., Danbury, CT 06810, USA JJ. Song Oklahoma State University, 413 NRC, Center for Laser Res. and C5.2 Department of Physics, Stillwater, OK 74078-3038, USA Y.-K. Song Brown University, Box M, Center for Advanced Materials Research C5.5 182 Hope Street, Providence, RI02912, USA C. Stampfl Xerox PARC, 3333 Coyote Hill Rd. A8.1.A8.2 Palo Alto, CA 94304, USA S. Strite Uniphase Laser Enterprise, AG, Binzstrasse 17 B3.1,B3.4 CH 8045 Zurich, Switzerland M. Suzuki Matsushita Electric Industrial Co. Ltd., Central Research Lab. A6.1-A6.9 3-4 Hikaridai, Seika-cho Souraku-gun, Kyoto 619-02, Japan T. Suski Polish Academy of Sciences, UNIPRESS, High Pressure Research Center A1.2 Sokolowska 29137, Warsaw 01-142, Poland M. Tabuchi Nagoya University, Department of Materials Science and Engineering B2.1 Nagoya 464-8603, Japan Y. Takeda Nagoya University, Department of Materials Science and Engineering B2.1 Nagoya 464-8603, Japan T.T. Takeuchi Meijo University, Department of Electrical and Electronic Engineering C2.5 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan T.L. Tansley Macquarie University, Department of Physics A4.3-A4.5 Semiconductor Science and Technology Labs., Sydney, NSW 2109, Australia P. Thurian TU Berlin, Institut fur Festkoerperphysik A8.9 Hardenbergstr. 36, D-10623 Berlin, Germany J. Torvik Astralux Inc., 2500 Central Avenue A8.10 Boulder, CO 80301, USA T. Uenoyama Matsushita Electric Industrial Co., Ltd., Central Research Lab. A6.1-A6.9 3-4 Hikaridai, Seika-cho Souraku-gun, Kyoto 619-02, Japan M. Umeno Research Center for Micro-structure Devices, Nagoya Institute of C3.5 Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan A. Usui NEC Corporation, Opto-electronics Research Labs. B2.6, B2.9 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan CG. Van de Walle Xerox PARC, 3333 Coyote Hill Rd. A8.1,A8.2,A8.7,A8.8 Palo Alto, CA 94304, USA C. Wetzel Meijo University, Department of Electrical and Electronic Engineering A3.2, A4.2, A8.3 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan T. Yamamoto Osaka University, Department of Condensed Matter Physics A8.6 Institute of Scientific and Industrial Res., Osaka 567, Japan A. Yoshida Toyohashi University of Technology, Department of Electrical A2.1-A2.3 and Electronic Engineering, Toyohashi 441, Japan C. Youtsey University of Illinois at Urbana-Champaign, 127 Microelectronics Lab. B4.3 208 N Wright Street, Urbana, IL 61801, USA C-M. Zetterling KTH, Royal Institute of Technology, Department of Electronics A2.4 Box Electrum 229, SE-164 40 Kista, Sweden T.S. Zheleva North Carolina State University, Department of Materials Science and B2.10 Engineering, Box 7907, Yarborough Drive, Rayleigh, NC 27695-7907, USA J. Zolper Office of Naval Research, Electronics Division, Code 312 B3.2, B3.3 800 North Quincy Street, Arlington, VA 22217-5660, USA
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