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Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics PDF

475 Pages·1997·20.839 MB·English
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Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics NATO ASI Series Advanced Science Institutes Series A Series presenting the results of activities sponsored by the NA TO Science Committee, which aims at the dissemination of advanced scientific and technological knowledge, with a view to strengthening links between scientific communities. The Series is published by an international board of publishers in conjunction with the NATO Scientific Affairs Division A Life Sciences Plenum Publishing Corporation B Physics London and New York C Mathematical and Physical Sciences Kluwer Academic Publishers D Behavioural and Social Sciences Dordrecht, Boston and London E Applied Sciences F Computer and Systems Sciences Springer-Verlag G Ecological Sciences Berlin, Heidelberg, New York, London, H Cell Biology Paris and Tokyo I Global Environmental Change PARTNERSHIP SUB·SERIES 1. Disarmament Technologies Kluwer Academic Publishers 2. Environment Springer-Verlag I Kluwer Academic Publishers 3. High Technology Kluwer Academic Publishers 4. Science and Technology Policy Kluwer Academic Publishers 5. Computer Networking Kluwer Academic Publishers The Partnership Sub-Series incorporates activities undertaken in collaboration with NATO's Cooperation Partners, the countries of the CIS and Central and Eastern Europe, in Priority Areas of concern to those countries. NATo-PCo-DATA BASE The electronic index to the NATO ASI Series provides full bibliographical references (with keywords and/or abstracts) to more than 50000 contributions from international scientists published in all sections of the NATO ASI Series. Access to the NATO-PCO-DATA BASE is possible in two ways: - via online FILE 128 (NATO-PCO-DATA BASE) hosted by ESRIN, Via Galileo Galilei, 1-00044 Frascati, Italy. - via CD-ROM "NATO-PCO-DAT A BASE" with user-friendly retrieval software in English, French and German (©WTV GmbH and DATAWARE Technologies Inc. 1989). The CD-ROM can be ordered through any member of the Board of Publishers or through NATO PCO, Overijse, Belgium. 3. High Technology - Vol. 36 Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics edited by Andrei Andriesh Moldavian Academy of Sciences, Centre of Optoelectronics, Kishinau, Republic of Moldova and Mario Bertolotti Department of Energetics, Universityof Rome "La Sapienza", Rome,ltaly Springer-Science+Business Media, B.v. Proceedings of the NATO Advanced Research Workshop on Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics Kishinau, Moldova October 1996 A C.I.P. Catalogue record for this book is available from the Library of Congress ISBN 978-94-010-6313-5 ISBN 978-94-011-5496-3 (eBook) DOI 10.1007/978-94-011-5496-3 Printed on acid-free paper AII Rights Reserved © 1997 Springer Science+Business Media Dordrecht Originally published by Kluwer Academic Publishers in 1997 Softcover reprint of the hardcover 1 st edition 1997 No part of the material protected by this copyright notice may be reproduced or utilized in any form or by any means, electronic or mechanical, including photo copying, recording or by any informatian storage and retrieval system, without written permission from the copyright awner. CONTENTS Preface xi Measurements of third-order nonlinearities in amorphous materials ........... 1 M. Bertolotti, E. Fazio, G. Liakhou, R. LiVoti, F. Michelotti, S. Paoloni, F. Senesi, C. Sibilia Photoinduced phenomena in chalcogenide glass semiconductors .. . . . . . . . . . . 17 A. M. Andriesh Electronic micro-fabrication of chalcogenide glass ...................... 31 K. Tanaka Metal-photodissolution in amorphous semiconductors of the As-S System .... 45 G. Dale, A. E. Owen and P.J.S. Ewen Amorphous superlattices of chalcogenides .............................6 1 E. Vateva Density of localized states in the gap of non-crystalline semiconductors ...... 77 G.J. Adriaenssens and A. Eliat Photo structural phase transitions in amorphous chalcogenides: basic principles and applications in holography and optical information processing . . . . . . . . . . 93 C.R. Dietrich Thermally and photoinduced phenomena in amorphous chalcogenides ...... 109 P. Nagels Photoinduced effects in amorphous chalcogenides ..................... 123 M. Frumar, Z. Polak, Z. Cernosek, M. Vlcek and B. Frumarova CW and pulsed investigation of photoinduced darkening in As2S3 amorphous thin films .......................................... 141 M. Bertolotti, F. Michelotti, A.M. Andriesh, VN. Chumash, M. Popescu Optical glasses for infrared transmittance -Synthesis and properties of chalcogenide glasses .......................................... 155 B. Voigt and D. Linke New chalcohalide glasses as promising materials for optoelectronics ........ 171 L.A. Baidakov vi Contributions to self-diffraction and optical phase conjugation in semiconductors ............................................... 181 V.I. Vlad and A. Petris Doping of chalcogenide glasses of semiconductors ..................... 201 S. Vikhrov Medium range order in chalcogenide glasses .......................... 215 M. Popescu Simple theory of soft potentials and negative-U centers in chalcogenides .... 233 K.D. Tsendin Optical absorbability in ternary Ge-As-S glasses and some possibility of its applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243 J. V. Fekeshgazi, K. V. May, V. M. Mitsa and A. J. Vakaruk Photoinduced effects in chalcogenide glasses and their application for optical recording .................................................... 249 A. Kikineshi, A. Mishak Coordination defects formation model for reversible photostructural transformations in amorphous ~ S(Seh ............................ 259 OJ. Shpotyuk Amorphography of chaos and order in isotropic and anisotropic glasses ..... 275 S.A. Dembovsky Photoinduced structural changes in amorphous chalcogenides studied by Raman spectroscopy ................................................. 291 C. Raptis, J.P. Kotsalas, D. Papadimitriou, M. Vlcek, M. Frumar Infrared reflectance investigation of the structure ofxS~S3.(1-x)~S3 glasses 307 J.A. Kapoutsis, E.J. Kamitsos, J.P. Culeac and M.S. low Structure of potassium germanate glasses by vibrational spectroscopy ...... 317 Y.D. Yiannopoulos, E.!. Kamitsos and H.Jain A review of amorphous chalcogenides as materials for infrared bulk acousto-optic devices ...................................................... 327 A. B. Seddon and M. J. Laine The possibilities to use the intrinsic defect's optical properties for optoelectronics in fused silica ................................................. 337 A.R. Silins vii Amorphous silicon photodetectors for oxidised porous silicon based optical interconnections. . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 347 G. Masini, A. Ferrari, M. Balucani, S. La Monica, G. Maiello, V. Bondarenko, A. Dorofeev, V. Fillipov, N. Kazuchits Photoluminescence in hydrogenerated amorphous carbon ................. 361 M. Ko6s and I. P6csik Optical elements for sensing and communication -A Review ..............3 79 T. Necsoiu and C.E.A.Grigorescu New materials for solar energy conversion ........................... 391 A. V. Simashkevich, P. V. Gaugash Experimental investigation of subsurface structure and surface symmetry of disordered semiconductors ........................................ 403 AP. Fedtchouk, R.A. Rudenko, E.M. Barnyak, AA Fedtchouk Multiquantum processes in solids. New aspects ........................ 417 V. A. Kovarsky Bose-Einstein condensation of excitons in the presence of laser radiation ... 431 S. A. Moskalenko, V.R. Misko and V.Gh. Pavlov Thermal, plasma and photoinduced microstuctural changes on a-SiC :H films ................................................. 445 M. Dinescu, D. Ghica, N. Chitica, C. Stanciu, G. Dinescu, G. Ghica, A. Ferrari, G. Maiello, S. La Monica, G. Masini Some electrophysical properties of C thin films ...................... 451 60 A. Andriesh, M. lovu, E. Khanchevskaia, K. Turta, I. Geru, D. Spoyala Deposition of CulnSe thin films by pulsed electron beam ablation ......... 452 2 A. M. Andriesh, S. A. Malkov, M. S. low Optical properties of Ge-As-Se glasses and films on their basis ............ 453 V. Bazakutsa, S. Gapochenko, V. Belozertseva, V. Mussil, Yeo Lemeshevskaya and A. Ryabchun Optical registration media with near ir sensibility for xerography .......... 454 A. Buzdugan Nonlinear propagation of strong laser pulses in non-crystalline semiconductor films ............................................ 455 V. Chumash, I. Cojocaru, G. Para, E. Fazio, F. Michelotti and M. Bertolotti viii The peculiarities of photoinduced absorption in chalcogenide glass fibres 0000456 I. Po Culeac Mass-spectrometric investigation of the photostructural changes in chalcogenide glasses 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 457 V. To Doighier Cooperative two-photon emission in the microcavity 000000000000000000458 No A. Enaki, Mo A. Macovei A layered-inhomogeneous model of the structure of vitreous GeS2 - based vacuum condensates 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 459 V. Gerasimov and V. Mitsa Electrical properties of p-Si/a - C:H heterojunctions 0000000000000000000460 Mo Koos, I. Pocsik and Mo Iovu Electromotive force in the structures metal-gradient films <As2S3 Al(Bi»-metal 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 461 I. Migolinets, I. Shovak, I. Popovich, A. Lada, V. Pinzenik and So Mikulaninets Thermostimulated luminescence of amorphous oxide films of aluminium 0 0 0 0 0 462 V. V. Mikho, Lo No Vilanskaya, Y. V. Robul and Mo K. Naftulovich Low frequency Raman spectra, sizes of fractals and longitudinal elastic modules in wide gap chalcogenide glassy semiconductors 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 463 Vo Mitsa Optical bistability in nonlinear interaction of short light pulses with thin- film resonant structure 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 464 V. Musinschi and Mo Caraman Recording equipment based on photothermoplastic medium for space and airborn applications 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 465 L. M. Panasyuk, V. K. Rotaru, I. V. Chapurin and 00 Yao Korshak Photothermoplastic media for non-destructive control systems 0 0 0 0 0 0 0 0 0 0 0 466 Lo Mo Panasyuk, OoYao Korshak, V. K. Rotaru and I. V. Chapurin Investigation of integrated-optics devices on the basis of thin films of chalcogenide glassy semiconductors 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 467 A. Popescu Reduced temperature growth and characterization ofInP/SrF2/InP(lOO) heterostructure 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 468 SoL. Pyshkin, V. Po Grekov, J. Po Lorenzo, So V. Novikov and K. So Pyshkin ix Fresnel zone plates on chalcogenide glass without chromatical aberrations ... 469 R. Radvan, R. Savastru, D. Gbica, V. Bivol, A. Prisacari and G. Triduh Bipolar transport and bipolar photoconductivity in amorphous films containing arsenic chalcogenide vitreous semiconductors . .. . . . . . . . . . . . . . 471 Sh.Sh. Sarsembinov, O. Yu. Prikhodko, M. G. Maltekbasov, S. Ya. Maksimova, A. P. Ryaguzov, M. H. Wasfy Electron-induced anisotropy in chalcogenide glasses: state of the problem, physical features and microstructural mechanism ...................... 472 O. 1. Shpotyuk, V. O. Balitska and M. M. Vakiv Sub-band-gapabsorption in ~S~ films from photocapacitance spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 473 S. D. Shutov and 1. A. Vasiliev Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium ....................................... 474 E. 1. Terukov, V. Kh. Kudoyarova, A. N. Kuznetsov and W. Fuhs Analytical Index 475 PREFACE The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of non-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of non -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of non-crystalline semiconductors and their specific application: -optical properties of non-crystalline semiconductors; - doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in non-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phenomena. As a novel item it is worth to mention the study of nonlinear optical effects in amorphous semiconducting films. The third order optical non linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in non-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phenomena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference. Considerable attention was also given to technical applications of the photoinduced phenomena in optoelectronics. applications and devices development based on non crystalline semiconductors with the focus on optoelectronics. Optical and photoelectrical information storage media. high resolution lithography. optical diffraction elements. optoelectronic parts and circuits can be based on the photoinduced structural transformation phenomena. In conclusion the workshop showed that non-crystalline semiconductors represent an important class of semiconductors. which have large potentialities for optolectronics and the most significative advances were discussed. The present book contains the proceedings of the conference. Before concluding on behalf of all participants and guests of the Workshop. of all Chisinau organizers. we would like to express our deep and sincere gratitude to NATO Scientific Affairs Division for financial support without which the Workshop in Chisinau would have never taken place. xi

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