Outlook and Challenges of Nano Devices, Sensors, and MEMS

522 Pages·2017·27.98 MB·English

by  Ting Li, Ziv Liu (eds.)

Ting Li · Ziv  Liu Editors
Outlook and
Challenges of
Nano Devices,
Sensors, and
MEMS
Outlook and Challenges of Nano Devices,
Sensors, and MEMS
Ting Li (cid:129) Ziv Liu
Editors
Outlook and Challenges
of Nano Devices,
Sensors, and MEMS
Editors
TingLi ZivLiu
StateKeyLabofElectronic Microelectronics&Solid-stateElectronics
ThinFilm&IntegratedDevice College
UniversityofElectronic UniversityofElectronicScience&
Science&TechnologyofChina TechnologyofChina
Chengdu,China Chengdu,China
ISBN978-3-319-50822-1 ISBN978-3-319-50824-5 (eBook)
DOI10.1007/978-3-319-50824-5
LibraryofCongressControlNumber:2017931961
©SpringerInternationalPublishingAG2017
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Foreword
This book mainly covers the current status, challenges, and future directions on
design,fabrication, simulation,reliability,andapplicationsofnanoscalesemicon-
ductordevices,MEMS,andsensors.Andthesenoveldevicesarethebackbonefor
realizingthenext-generationInternetofthings.Thisbookprovidesreadersimpor-
tant information related to the recent development on these nanoelectron appara-
tuses, which represents that thisbook will become an indispensable handbook for
anyoneinarelevantfield.
Thisbookcontains17chapters,andallthechapterscanbedividedinto4parts:
MOS,sensors(includingphotoelectricdetectionandgasdetection),nanostructured
oxide materials, and other nano devices. In spite of the large coverage of related
fields, the focus of this book is explicitly placed on the interaction of nanoscale
structure and electrical and/or optical behavior of novel semiconductor devices,
MEMS, and sensors. Besides, it enables detailed understanding on the difficulties
andchallengesofrealizingthenanodevicesmovingforward.
In this single book, the reader can access up-to-date and critical knowledge on
the design, fabrication, simulation, and reliability of the increasingly important
nanoscale electron apparatuses, including semiconductor devices, MEMS, and
sensors.
UniversityofElectronicScience HeYu
andTechnology
Chengdu,China
UniversityofElectronicScience LanhuiWu
andTechnology
Chengdu,China
v
Preface
This book contains 17 chapters, which is written by selected experts who have
presenthigh-qualitypapersontopicscloselyrelevanttothethemeofnanodevices,
sensors, and MEMS. We can understand current status, challenges, and future
directions on design, fabrication, simulation, reliability, and applications of nano-
scalesemiconductordevices,MEMS,andsensorsfromthisbook.
Thefieldofnanoelectronicisevolvingrapidly,andnovelnanoscaledevicesare
being investigated and developed at many leading research labs and companies
worldwide. Nanoscale semiconductor devices, MEMS, and sensors are the back-
bone for realizing the next-generation Internet of things. The research of design,
fabrication, reliability, modeling, simulation, and applications of these nanoscale
electron components is becoming more and more important to achieve further
technology breakthrough. Learninghowthe nanoscale structure interacts with the
electricaland/oropticalperformances,howtofindoptimalsolutionstoachievethe
bestoutcome,howtheseapparatusescanbedesignedviamodelsandsimulations,
how to improve the reliability, and what are possible challenges and roadblocks
movingforwardisnecessarytoanyrelativeresearchers.
This is abook thatdescribesthe dielectric andnoise analysis ofMOS devices,
devices modeling and CMOS technology, and medical application in MEMS and
sensors,aswellasrelativefabricationandoptimizingtechnology.Itisreallyabook
whichprovidesreadersimportantinformationrelatedtotherecentdevelopmenton
thesenanoelectronapparatusesandchallengesofrealizingthenanodevicesmoving
forwardthatshowsprocessesandmaterialsneededforfabricationandtheinterac-
tion of nanoscale structure and electrical and/or optical behavior, as well as the
performance optimization and reliability analysis by modeling and simulating.
Springer is highly desirable and can offer engineers, research scientists, and stu-
dentsamuchneededreferenceinthisfield.
Last but not the least, we want to express our deep appreciation to the endless
supportfromwritersofthisbook.Also,wereallyhopethatthereaderscanaccess
vii
viii Preface
up-to-date and critical knowledge on the design, fabrication, simulation, and reli-
ability of the increasingly important nanoscale electron apparatuses from a single
book.Knowmoreaboutnowadaysandthinkmoreaboutthefuture.LetSpringerbe
awindowthroughwhichwecandiscoverandexploredeeperinthisfield.
Chengdu,China TingLi
ZivLiu
Acknowledgements
Sincere thanks must be expressed to all authors who have devoted considerable
timeandefforttoprepareexcellentcomprehensiveworksofhighscientificquality
and value. Without their help, it would be impossible to prepare this book in line
withthehighstandardsthatwehavesetfromtheverybeginningofthisproject.
We would also like to thank our Springer editorial contacts. It would not have
been possible to bring out this book within such a short span of time without her
concerted encouragement. We very much appreciate the continued support
extendedbySpringer.
Lastly,IwouldliketoexpressmythankstoProfessorHeYu,studentHaicheng
Yao,andotherstudentsoftheUniversityofElectronicScienceandTechnologyof
China,whoassistedinthisbook.
ix
Contents
PartI MOS
1 High-kDielectricforNanoscaleMOSDevices. . . . . . . . . . . . . . . . 3
Ling-XuanQian
2 ChallengeofHighPerformanceBandgapReferenceDesign
inNanoscaleCMOSTechnology. . . . . . . . . . . . . . . . . . . . . . . . . . . 45
ZhangJun-an,LiGuangjun,ZhangRui-tao,YangYu-jun,
LiXi,YanBo,FuDong-bing,andLuoPu
3 MetalOxideSemiconductorThin-FilmTransistors:Device
PhysicsandCompactModeling. . . . . . . . . . . . . . . . . . . . . . . . . . . 69
WanlingDeng,JielinFang,XixiongWei,andFeiYu
4 ACRandomTelegraphNoise(ACRTN)inNanoscale
MOSDevices. .. . . .. . . . .. . . . .. . . . .. . . . .. . . . .. . . . .. . . . .. 99
JibinZou,ShaofengGuo,RuHuang,andRunshengWang
5 PassivationandCharacterizationinHigh-k/III–VInterfaces. . . . . 123
ShengkaiWangandHonggangLiu
6 LowTriggerVoltageandHighTurn-OnSpeedSCRforESD
ProtectioninNanometerTechnology. . . . . . . . . . . . . . . . . . . . . . . 151
JizhiLiu,ZhiweiLiu,FeiHou,HuiCheng,LiuZhao,andRuiTian
7 Silicon-BasedJunctionlessMOSFETs:DevicePhysics,
PerformanceBoostersandVariations. . . . . . . . . . . . . . . . . . . . . . . 183
XinnanLin,HaijunLou,YingXiao,WenboWan,
LiningZhang,andMansunChan
xi
xii Contents
PartII Sensor
8 EffectofNanoscaleStructureonReliabilityofNanoDevices
andSensors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 239
JayaMadanandRishuChaujar
9 MEMS/NEMS-EnabledVibrationalEnergyHarvesting
forSelf-PoweredandWearableElectronics. . . . . . . . . . . . . . . . . . 271
KaiTao,JinWu,AjayGiriPrakashKottapalli,
SunWohLye,andJianminMiao
10 TheApplicationofGrapheneinBiosensors. . . . . . . . . . . . . . . . . . 299
TingLi,ZebinLi,JinhaoZhou,BoanPan,XiaoXiao,
ZhaojiaGuo,LanhuiWu,andYuanfuChen
11 ModellingandOptimizationofInertial
Sensor-Accelerometer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 331
ZakriyaMohammed,WaqasAminGill,andMahmoudRasras
12 GrapheneforFutureHigh-PerformanceGasSensing. . . . . . . . . . 347
JinWu,KaiTao,JianminMiao,andLeslieK.Norford
13 NanoporousPalladiumFilmsBasedResistive
HydrogenSensors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 365
ShuanghongWu,HanZhou,MengmengHao,andZhiChen
PartIII NanostructuredOxide
14 MicrostructureoftheNanostructuredOxideComposite
ThinFilmsandItsFunctionalProperties. . . . . . . . . . . . . . . . . . . . 397
XingkunNing
15 FabricationandCharacterizationsofBi Te Based
2 3
TopologicalInsulatorNanomaterials. . . . . . . . . . . . . . . . . . . . . . . 429
Z.H.Wang,XuanP.A.Gao,andZ.D.Zhang
PartIV OtherNanoscaleDevices
16 Micro/NanoscaleOpticalDevicesforHyperspectral
ImagingSystem. . . . .. . . . .. . . . . .. . . . . .. . . . .. . . . . .. . . . .. . 459
LiLi,ChengjunHuang,andHaiyingZhang
17 FabricationandPhysicalPropertiesofNanoscaleSpinDevices
BasedonOrganicSemiconductors. . . . . . . . . . . . . . . . . . . . . . . . . 483
XianminZhang