OPAx835 Ultralow-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

57 Pages·2015·2.1 MB·English

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OPA835,OPA2835
SLOS713H–JANUARY2011–REVISEDNOVEMBER2015
OPAx835 Ultralow-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp
1 Features For battery-powered, portable applications where
power is of key importance, the low power
• UltraLowPower
1 consumption and high-frequency performance of the
– SupplyVoltage:2.5Vto5.5V OPA835 and OPA2835 devices offers performance
– QuiescentCurrent:250 µA/ch(Typical) versus power that is not attainable in other devices.
Coupled with a power-savings mode to reduce
– PowerDownMode:0.5 µA(Typical)
current to < 1.5 μA, these devices offer an attractive
• Bandwidth:56MHz(AV=1V/V) solution for high-frequency amplifiers in battery-
• SlewRate:160V/µs poweredapplications.
• RiseTime:10ns(2VSTEP) The OPA835 RUN package option includes
• SettlingTime(0.1%):55ns(2V ) integrated gain setting resistors for the smallest
STEP
possible footprint on a printed-circuit-board
• OverdriveRecoveryTime:200ns
(approximately 2 mm × 2 mm). By adding circuit
• SNR: 0.00015% (–116.4dBc)at1kHz(1V )
RMS traces on the PCB, gains of +1, –1, –1.33, +2, +2.33,
• THD: 0.00003% (–130dBc)at1kHz(1V ) –3, +4, –4, +5, –5.33, +6.33, –7, +8 and inverting
RMS
attenuations of –0.1429, –0.1875, –0.25, –0.33, –0.75
• HD /HD :–70dBc/–73dBcat1MHz(2V )
2 3 PP
canbeachieved. SeeTable3andTable4fordetails.
• InputVoltageNoise:9.3nV/√Hz(f=100kHz)
The OPA835 and OPA2835 devices are
• InputOffsetVoltage:100µV(±500-µVMaximum)
characterized for operation over the extended
• CMRR:113dB
industrialtemperaturerangeof –40°Cto+125°C.
• Output CurrentDrive:40mA
• RRO:Rail-to-RailOutput DeviceInformation(1)
• InputVoltageRange:–0.2Vto3.9V PARTNUMBER PACKAGE BODYSIZE(NOM)
(5-VSupply) SOT-23(6) 2.90mm×1.60mm
OPA835
• OperatingTemperatureRange: QFN(10) 2.00mm×2.00mm
–40°Cto125°C SOIC(8) 4.90mm×3.91mm
VSSOP(10) 3.00mm×3.00mm
2 Applications OPA2835
UQFN(10) 2.00mm×2.00mm
• Low-PowerSignalConditioning QFN(10) 2.00mm×2.00mm
• AudioADCInputBuffer (1) Forallavailablepackages,seethepackageoptionaddendum
attheendofthedatasheet.
• Low-PowerSARandΔΣ ADCDriver
• PortableSystems HarmonicDistortionvsFrequency
• Low-PowerSystems
-30
• High-DensitySystems VS= 5 V,
-40 G = 1,
• UltrasonicFlowMeter -50 VOUT= 2 Vpp,
RF= 0W,
3 Description Bc -60 RL= 2 kW
The OPA835 and OPA2835 devices (OPAx835) are on - d -70
single and dual ultralow-power, rail-to-rail output, orti -80
negative-rail input, voltage-feedback (VFB) Dist -90 HD2
c
operational amplifiers designed to operate over a ni -100
o
psuopwpelry,suoprp±ly1.r2a5n-gVetoof±22.5.7-5V-Vtow5i.t5h-Vawdiuthalasusipnpgllye. Harm -110 HD3
-120
Consuming only 250 µA per channel and with a unity
-130
gain bandwidth of 56 MHz, these amplifiers set an
industry-leading performance-to-power ratio for rail- -140
10k 100k 1M 10M
to-railamplifiers. f - Frequency - Hz
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
OPA835,OPA2835
SLOS713H–JANUARY2011–REVISEDNOVEMBER2015 www.ti.com
Table of Contents
1 Features.................................................................. 1 8.2 FunctionalBlockDiagram.......................................24
2 Applications........................................................... 1 8.3 FeatureDescription.................................................24
3 Description............................................................. 1 8.4 DeviceFunctionalModes........................................27
4 RevisionHistory..................................................... 2 9 ApplicationandImplementation........................ 30
9.1 ApplicationInformation............................................30
5 OPA835-RelatedDevices...................................... 4
9.2 TypicalApplication..................................................36
6 PinConfigurationandFunctions......................... 4
10 PowerSupplyRecommendations..................... 40
7 Specifications......................................................... 6
11 Layout................................................................... 40
7.1 AbsoluteMaximumRatings......................................6
11.1 LayoutGuidelines.................................................40
7.2 ESDRatings..............................................................6
11.2 LayoutExample....................................................41
7.3 RecommendedOperatingConditions.......................6
12 DeviceandDocumentationSupport................. 42
7.4 ThermalInformation:OPA835 .................................6
7.5 ThermalInformation:OPA2835................................7 12.1 DeviceSupport ....................................................42
7.6 ElectricalCharacteristics:V =2.7V........................7 12.2 DocumentationSupport........................................42
S
7.7 ElectricalCharacteristics:V =5V...........................9 12.3 Trademarks...........................................................42
S
7.8 TypicalCharacteristics:V =2.7V.........................12 12.4 ElectrostaticDischargeCaution............................42
S
7.9 TypicalCharacteristics:V =5V............................18 12.5 Glossary................................................................42
S
8 DetailedDescription............................................ 24 13 Mechanical,Packaging,andOrderable
Information........................................................... 42
8.1 Overview.................................................................24
4 Revision History
NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion.
ChangesfromRevisionG(June2015)toRevisionH Page
• ChangedpackagedesignatorfromDMCtoRMC(typo)........................................................................................................ 5
• ChangedtextinfirstparagraphofPower-DownOperationsection..................................................................................... 25
ChangesfromRevisionF(June2015)toRevisionG Page
• MovedallswitchingparametersfromtheSwitchingCharacteristics:V =2.7VbackintotheElectrical
S
Characteristics:V =2.7Vtable ........................................................................................................................................... 7
S
• MovedallswitchingparametersfromtheSwitchingCharacteristics:V =5VtablebackintotheElectrical
S
Characteristics:V =5Vtable .............................................................................................................................................. 9
S
ChangesfromRevisionE(July2013)toRevisionF Page
• AddedPinConfigurationandFunctionssection,ESDRatingstable,SwitchingCharacteristicstables,Feature
Descriptionsection,DeviceFunctionalModes,ApplicationandImplementationsection,PowerSupply
Recommendationssection,Layoutsection,DeviceandDocumentationSupportsection,andMechanical,
Packaging,andOrderableInformationsection ..................................................................................................................... 1
• MovedtheswitchingparametersfromtheElectricalCharacteristicstablesintoSwitchingCharacteristicstables.............10
ChangesfromRevisionD(October2011)toRevisionE Page
• AddedRMCpackagetodocument......................................................................................................................................... 1
• AddedRMCpindefinitionstoPinFunctionstable................................................................................................................. 5
• AddedRMCtoThermalInformationtable.............................................................................................................................. 6
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ChangesfromRevisionC(September2011)toRevisionD Page
• RemovedProductPreviewfromOPA835IRUNTandOPA835IRUNR.................................................................................. 4
• ChangedResistorTemperatureCoefficientFrom:TBDTo:<10........................................................................................... 9
• ChangedQuiescentoperatingcurrentTo:Quiescentoperatingcurrentperamplifier........................................................... 9
• ChangedResistorTemperatureCoefficientFrom:TBDTo:<10......................................................................................... 11
• ChangedQuiescentoperatingcurrentTo:Quiescentoperatingcurrentperamplifer.......................................................... 11
ChangesfromRevisionB(May2011)toRevisionC Page
• Addedthe"TheOPA835RUNpackage..."texttotheDescriptionsection............................................................................ 1
• RemovedProductPreviewfromalldevicesexceptOPA835IRUNTandOPA835IRUNR.................................................... 4
• ReplacedtheTBDvaluesintheThermalInformationtable................................................................................................... 6
• Changed-Channeltochannelcrosstalk(OPA2835)TypvalueFrom:TBDTo:–120dB.................................................... 8
• ChangedtheCommon-moderejectionratioMinvalueFrom:91dBTo:88dB.................................................................... 8
• AddedGAINSETTINGRESISTORS(OPA835IRUNONLY)................................................................................................ 9
• ChangedtheQuiescentoperatingcurrent(T =25°C)MinvalueFrom:190µATo:175µA............................................... 9
A
• ChangedthePowersupplyrejection(±PSRR)MinvalueFrom:91dBTo:88dB................................................................ 9
• ChangedthePower-downpinbiascurrentCONDITIONSFrom:PD=0.7VTo:PD=0.5V.............................................. 9
• ChangedthePower-downquiescentcurrentCONDITIONSFrom:PD=0.7VTo:PD=0.5V........................................... 9
• Changed-Channeltochannelcrosstalk(OPA2835)TypvalueFrom:TBDTo:-120dB................................................... 10
• ChangedtheCommon-moderejectionratioMINvalueFrom:94dBTo:91dB................................................................. 11
• AddedGAINSETTINGRESISTORS(OPA835IRUNONLY).............................................................................................. 11
• ChangedtheQuiescentoperatingcurrent(T =25°C)MinvalueFrom:215µATo:200µA............................................. 11
A
• ChangedthePowersupplyrejection(±PSRR)MinvalueFrom:93dBTo:90dB.............................................................. 11
• ChangedthePower-downquiescentcurrentCONDITIONSFrom:PD=0.7VTo:PD=0.5V......................................... 11
• ChangedthePower-downquiescentcurrentCONDITIONSFrom:PD=0.7VTo:PD=0.5V......................................... 11
• AddedFigureCrosstalkvsFrequency................................................................................................................................. 15
• AddedFigureCrosstalkvsFrequency................................................................................................................................. 21
• AddedsectionSingle-EndedtoDifferentialAmplifier........................................................................................................... 31
ChangesfromRevisionA(March2011)toRevisionB Page
• ChangedOPA835fromproductpreviewtoproductiondata.................................................................................................. 1
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5 OPA835-Related Devices
PARTNUMBER BW(AV=1) SLEWRATE Iq(+5V) INPUTNOISE RAIL-TO-RAILIN/OUT DUALS
MHz V/µsec mA nV/√Hz
OPA835 30 110 0.25 9.3 –VS/Out OPA2835
OPA365 50 25 5 4.5 In/Out OPA2365
THS4281 95 35 0.75 12.5 In/Out
LMH6618 140 45 1.25 10 In/Out LMH6619
OPA836 205 560 1 4.6 –VS/Out OPA2836
OPA830 310 600 3.9 9.5 –VS/Out OPA2830
ForacompleteselectionofTIHighSpeedAmplifiers,visitti.com.
6 Pin Configuration and Functions
OPA835:DBVPackage
6-PinSOT-23 OPA2835:DPackage
TopView 8-PinSOIC
TopView
VOUT 1 6 VS+ VOUT1 1 8 VS+
VS- 2 + - 5 PD VIN1- 2 - 7 VOUT2
V 3 4 V +
IN+ IN- V 3 6 V
IN1+ - IN2-
+
V 4 5 V
S- IN2+
OPA835:RUNPackage
10-PinQFN
TopView
OPA2835:DGSPackage
V 10-PinVSSOP
S+
TopView
VOUT 1 10 9 FB1
2.4k VOUT1 1 10 VS+
- +
VIN- 2 8 FB2 VIN1- 2 - 9 VOUT2
1.8k +
VIN+ 3 7 FB3 VIN1+ 3 - 8 VIN2-
600 VS- 4 + 7 VIN2+
FB
PD 4 5 6 4 PD1 5 6 PD2
V
S-
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OPA2835:RMCandRUNPackages
10-PinUQFNand10-PinQFN
TopView
V
S+
VOUT1 1 10 9 VOUT2
- + + -
V 2 8 V
IN1- IN2-
VIN1+ 3 7 VIN2+
PD1 4 6 PD2
5
V
S-
PinFunctions
PIN
OPA835 OPA2835
TYPE DESCRIPTION
NAME QFN,
SOT-23 QFN SOIC VSSOP
UQFN
FB 9 I/O Connectiontotopof2.4-kΩinternalgainsettingresistors
1
Connectiontojunctionof1.8-kΩand2.4-kΩinternalgain
FB 8 I/O
2 settingresistors
—
Connectiontojunctionof600-Ωand1.8-kΩinternalgain
FB 7 — — I/O
3 settingresistors
FB 6 I/O Connectiontobottomof600-Ωinternalgainsettingresistors
4
AmplifierPowerDown,low=low-powermode,
PD 5 4 — I
high=normaloperation(PINMUSTBEDRIVEN)
Amplifier1PowerDown,low=low-powermode,
PD1 5 4 I
high=normaloperation(PINMUSTBEDRIVEN)
— —
Amplifier2PowerDown,low=low-powermode,
PD2 6 6 I
high=normaloperation(PINMUSTBEDRIVEN)
V 3 3 I Amplifiernoninvertinginput
IN+
— —
V 4 2 I Amplifierinvertinginput
IN–
V 3 3 3 I Amplifier1noninvertinginput
IN1+
V 2 2 2 I Amplifier1invertinginput
IN1–
— —
V 5 7 7 I Amplifier2noninvertinginput
IN2+
V 6 8 8 I Amplifier2invertinginput
IN2–
V 1 1 — — — O Amplifieroutput
OUT
V 1 1 1 O Amplifier1output
OUT1
— —
V 7 9 9 O Amplifier2output
OUT2
V 6 10 8 10 10 POW Positivepowersupplyinput
S+
V 2 5 4 4 5 POW Negativepowersupplyinput
S–
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7 Specifications
7.1 Absolute Maximum Ratings
overoperatingfree-airtemperaturerange(unlessotherwisenoted)(1)
MIN MAX UNIT
V toV Supplyvoltage 5.5 V
S– S+
V Inputvoltage V –0.7 V +0.7 V
I S– S+
V Differentialinputvoltage 1 V
ID
I Continuousinputcurrent 0.85 mA
I
I Continuousoutputcurrent 60 mA
O
SeeThermalInformation:
Continuouspowerdissipation OPA835andThermal
Information:OPA2835
T Maximumjunctiontemperature 150 °C
J
T Operatingfree-airtemperature –40 125 °C
A
T Storagetemperature –65 150 °C
stg
(1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings
only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended
OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
7.2 ESD Ratings
VALUE UNIT
Humanbodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±6000
V Electrostaticdischarge Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2) ±1000 V
(ESD)
Machinemodel ±200
(1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
(2) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
7.3 Recommended Operating Conditions
overoperatingfree-airtemperaturerange(unlessotherwisenoted)
MIN NOM MAX UNIT
V Singlesupplyvoltage 2.5 5 5.5 V
S+
T Ambienttemperature –40 25 125 °C
A
7.4 Thermal Information: OPA835
OPA835
THERMALMETRIC(1) DBV RUN UNIT
(SOT23-6) (QFN)
6PINS 10PINS
RθJA Junction-to-ambientthermalresistance 194 145.8 °C/W
RθJCtop Junction-to-case(top)thermalresistance 129.2 75.1 °C/W
RθJB Junction-to-boardthermalresistance 39.4 38.9 °C/W
ψJT Junction-to-topcharacterizationparameter 25.6 13.5 °C/W
ψJB Junction-to-boardcharacterizationparameter 38.9 104.5 °C/W
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seeSemiconductorandICPackageThermalMetricsapplicationreport,
SPRA953.
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7.5 Thermal Information: OPA2835
OPA2835
THERMALMETRIC(1) D DGS RUN RMC UNIT
(SOIC) (VSSOP) (QFN) (UQFN)
8PINS 10PINS 10PINS 10PINS
RθJA Junction-to-ambientthermalresistance 150.1 206 145.8 143.2 °C/W
RθJCtop Junction-to-case(top)thermalresistance 83.8 75.3 75.1 49.0 °C/W
RθJB Junction-to-boardthermalresistance 68.4 96.2 38.9 61.9 °C/W
ψJT Junction-to-topcharacterizationparameter 33.0 12.9 13.5 3.3 °C/W
ψJB Junction-to-boardcharacterizationparameter 67.9 94.6 104.5 61.9 °C/W
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seeSemiconductorandICPackageThermalMetricsapplicationreport,
SPRA953.
7.6 Electrical Characteristics: V = 2.7 V
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputand
S+ S– OUT PP F L
outputreferencedtomid-supply,V =mid-supply–0.5V.T =25°C,unlessotherwisenoted.
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 51
VOUT=100mVPP,G=2 22.5
Small-signalbandwidth MHz C
VOUT=100mVPP,G=5 7.2
VOUT=100mVPP,G=10 3
Gain-bandwidthproduct VOUT=100mVPP,G=10 30 MHz C
Large-signalbandwidth VOUT=1VPP,G=1 24 MHz C
Bandwidthfor0.1-dBflatness VOUT=1VPP,G=2 4 MHz C
Slewrate,rise VOUT=1VSTEP,G=2 110 V/µs C
Slewrate,fall VOUT=1VSTEP,G=2 130 V/µs C
Risetime VOUT=1VSTEP,G=2 9.5 ns C
Falltime VOUT=1VSTEP,G=2 9 ns C
Settlingtimeto1%,rise VOUT=1VSTEP,G=2 35 ns C
Settlingtimeto1%,fall VOUT=1VSTEP,G=2 30 ns C
Settlingtimeto0.1%,rise VOUT=1VSTEP,G=2 60 ns C
Settlingtimeto0.1%,fall VOUT=1VSTEP,G=2 65 ns C
Settlingtimeto0.01%,rise VOUT=1VSTEP,G=2 120 ns C
Settlingtimeto0.01%,rise VOUT=1VSTEP,G=2 90 ns C
0.5%/0.2
Overshoot/Undershoot VOUT=1VSTEP,G=2 % C
f=10kHz,VIN_CM=mid-supply–0.5V –133
Second-orderharmonicdistortion f=100kHz,VIN_CM=mid-supply–0.5V –110 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V –73
f=10kHz,VIN_CM=mid-supply–0.5V –137
Third-orderharmonicdistortion f=100kHz,VIN_CM=mid-supply–0.5V –125 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V –78
f=1MHz,200-kHzToneSpacing,
Second-orderintermodulationdistortion VOUTEnvelope=1VPP, –75 dBc C
VIN_CM=mid-supply–0.5V
f=1MHz,200-kHzToneSpacing,
Third-orderintermodulationdistortion VOUTEnvelope=1VPP, –81 dBc C
VIN_CM=mid-supply–0.5V
Inputvoltagenoise f=100kHz 9.3 nV/√Hz C
Voltagenoise1/fcornerfrequency 147 Hz C
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
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Electrical Characteristics: V = 2.7 V (continued)
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputand
S+ S– OUT PP F L
outputreferencedtomid-supply,V =mid-supply–0.5V.T =25°C,unlessotherwisenoted.
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE(continued)
Inputcurrentnoise f=1MHz 0.45 pA/√Hz C
Currentnoise1/fcornerfrequency 14.7 kHz C
Overdriverecoverytime,over/under Overdrive=0.5V 140/125 ns C
Closed-loopoutputimpedance f=100kHz 0.028 Ω C
Channel-to-channelcrosstalk
f=10kHz –120 dB C
(OPA2835)
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 120 dB A
TA=25°C –500 ±100 500 A
TA=0°Cto70°C –880 880
Inputreferredoffsetvoltage µV
TA=–40°Cto85°C –1040 1040 B
TA=–40°Cto125°C –1850 1850
TA=0°Cto70°C –8.5 ±1.4 8.5
Inputoffsetvoltagedrift(2) TA=–40°Cto85°C –9 ±1.5 9 µV/°C B
TA=–40°Cto125°C –13.5 ±2.25 13.5
TA=25°C 50 200 400 A
Inputbiascurrent(3) TA=0°Cto70°C 47 410 nA
TA=–40°Cto85°C 45 425 B
TA=–40°Cto125°C 45 530
TA=0°Cto70°C –1.4 ±0.25 1.4
Inputbiascurrentdrift(2) TA=–40°Cto85°C –1.05 ±0.175 1.05 nA/°C B
TA=–40°Cto125°C –1.1 ±0.185 1.1
TA=25°C –100 ±13 100 A
TA=0°Cto70°C –100 ±13 100
Inputoffsetcurrent nA
TA=–40°Cto85°C –100 ±13 100 B
TA=–40°Cto125°C –100 ±13 100
TA=0°Cto70°C –1.230 ±0.205 1.230
Inputoffsetcurrentdrift(2) TA=–40°Cto85°C –0.940 ±0.155 0.940 nA/°C B
TA=–40°Cto125°C –0.940 ±0.155 0.940
INPUT
TA=25°C,<3dBdegradationinCMRRlimit –0.2 0 V A
Common-modeinputrangelow
TA=–40°Cto125°C,<3-dBdegradationinCMRRlimit –0.2 0 V B
TA=25°C,<3-dBdegradationinCMRRlimit 1.5 1.6 V A
Common-modeinputrangehigh
TA=–40°Cto125°C,<3-dBdegradationinCMRRlimit 1.5 1.6 V B
Common-moderejectionratio 88 110 dB A
Inputimpedancecommonmode 200||1.2 kΩ||pF C
Inputimpedancedifferentialmode 200||1 kΩ||pF C
OUTPUT
TA=25°C,G=5 0.15 0.2 V A
Linearoutputvoltagelow
TA=–40°Cto125°C,G=5 0.15 0.2 V B
TA=25°C,G=5 2.45 2.5 V A
Linearoutputvoltagehigh
TA=–40°Cto125°C,G=5 2.45 2.5 V B
Outputsaturationvoltage,high/low TA=25°C,G=5 45/13 mV C
TA=25°C ±25 ±35 mA A
Linearoutputcurrentdrive
TA=–40°Cto125°C ±20 mA B
(2) InputOffsetVoltageDrift,InputBiasCurrentDrift,andInputOffsetCurrentDriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
(3) Currentisconsideredpositiveoutofthepin.
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Electrical Characteristics: V = 2.7 V (continued)
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputand
S+ S– OUT PP F L
outputreferencedtomid-supply,V =mid-supply–0.5V.T =25°C,unlessotherwisenoted.
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
GAINSETTINGRESISTORS(OPA835IRUNONLY)
ResistorFB1toFB2 DCresistance 2376 2400 2424 Ω A
ResistorFB2toFB3 DCresistance 1782 1800 1818 Ω A
ResistorFB3toFB4 DCresistance 594 600 606 Ω A
Resistortolerance DCresistance –1% 1% A
Resistortemperaturecoefficient DCresistance <10 PPM C
POWERSUPPLY
Specifiedoperatingvoltage 2.5 5.5 V B
Quiescentoperatingcurrentper TA=25°C 175 245 340 µA A
amplifier TA=–40°Cto125°C 135 345 µA B
Powersupplyrejection(±PSRR) 88 105 dB A
POWERDOWN(PINMUSTBEDRIVEN)
Enablevoltagethreshold SpecifiedonaboveVS–+2.1V 1.4 2.1 V A
Disablevoltagethreshold SpecifiedoffbelowVS–+0.7V 0.7 1.4 V A
Power-downpinbiascurrent PD=0.5V 20 500 nA A
Power-downquiescentcurrent PD=0.5V 0.5 1.5 µA A
Turnontimedelay TimefromPD=hightoVOUT=90%offinalvalue 250 ns C
Turnofftimedelay TimefromPD=lowtoVOUT=10%oforiginalvalue 50 ns C
7.7 Electrical Characteristics: V = 5 V
S
Testconditionsunlessotherwisenoted:V =+5V,V =0V,V =2V ,R =0Ω,R =2kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply.T =25°C,unlessotherwisenoted.
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 56
VOUT=100mVPP,G=2 22.5
Small-signalbandwidth MHz C
VOUT=100mVPP,G=5 7.4
VOUT=100mVPP,G=10 3.1
Gain-bandwidthproduct VOUT=100mVPP,G=10 31 MHz C
Large-signalbandwidth VOUT=2VPP,G=1 31 MHz C
Bandwidthfor0.1-dBflatness VOUT=2VPP,G=2 14.5 MHz C
Slewrate,rise VOUT=2-VStep,G=2 160 V/µs C
Slewrate,fall VOUT=2-VStep,G=2 260 V/µs C
Risetime VOUT=2-VStep,G=2 10 ns C
Falltime VOUT=2-VStep,G=2 7 ns C
Settlingtimeto1%,rise VOUT=2-VStep,G=2 45 ns C
Settlingtimeto1%,fall VOUT=2-VStep,G=2 45 ns C
Settlingtimeto0.1%,rise VOUT=2-VStep,G=2 50 ns C
Settlingtimeto0.1%,fall VOUT=2-VStep,G=2 55 ns C
Settlingtimeto0.01%,rise VOUT=2-VStep,G=2 82 ns C
Settlingtimeto0.01%,fall VOUT=2-VStep,G=2 85 ns C
2.5%/1.5
Overshoot/Undershoot VOUT=2-VStep,G=2 % C
f=10kHz –135
Second-orderharmonicdistortion f=100kHz –105 dBc C
f=1MHz –70
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
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Electrical Characteristics: V = 5 V (continued)
S
Testconditionsunlessotherwisenoted:V =+5V,V =0V,V =2V ,R =0Ω,R =2kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply.T =25°C,unlessotherwisenoted.
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE(continued)
f=10kHz –139
Third-orderharmonicdistortion f=100kHz –122 dBc C
f=1MHz -73
Second-orderintermodulation f=1MHz,200-kHzToneSpacing,
–70 dBc C
distortion VOUTEnvelope=2VPP
f=1MHz,200-kHzToneSpacing,
Third-orderintermodulationdistortion –83 dBc C
VOUTEnvelope=2VPP
0.00015%
Signal-to-noiseratio,SNR f=1kHz,VOUT=1VRMS,22-kHzbandwidth C
–116.4 dBc
0.00003% C
Totalharmonicdistortion,THD f=1kHz,VOUT=1VRMS
–130 dBc C
Inputvoltagenoise f=100kHz 9.3 nV/√Hz C
Voltagenoise1/fcornerfrequency 147 Hz C
Inputcurrentnoise f=1MHz 0.45 pA/√Hz C
Currentnoise1/fcornerfrequency 14.7 Hz C
Overdriverecoverytime,over/under Overdrive=0.5V 195/135 ns C
Closed-loopoutputimpedance f=100kHz 0.028 Ω C
Channeltochannelcrosstalk
f=10kHz –120 dB C
(OPA2835)
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 120 dB A
TA=25°C –500 ±100 500 A
TA=0°Cto70°C –880 880
Inputreferredoffsetvoltage µV
TA=–40°Cto85°C –1040 1040 B
TA=–40°Cto125°C –1850 1850
TA=0°Cto70°C –8.5 ±1.4 8.5
Inputoffsetvoltagedrift(2) TA=–40°Cto85°C –9 ±1.5 9 µV/°C B
TA=–40°Cto125°C –13.5 ±2.25 13.5
TA=25°C 50 200 400 A
Inputbiascurrent(3) TA=0°Cto70°C 47 410 nA
TA=–40°Cto85°C 45 425 B
TA=–40°Cto125°C 45 530
TA=0°Cto70°C –1.4 ±0.25 1.4
Inputbiascurrentdrift(2) TA=–40°Cto85°C –1.05 ±0.175 1.05 nA/°C B
TA=–40°Cto125°C –1.1 ±0.185 1.1
TA=25°C –100 ±13 100 A
TA=0°Cto70°C –100 ±13 100
Inputoffsetcurrent nA
TA=–40°Cto85°C –100 ±13 100 B
TA=–40°Cto125°C –100 ±13 100
TA=0°Cto70°C –1.23 ±0.205 1.23
Inputoffsetcurrentdrift(2) TA=–40°Cto85°C –0.94 ±0.155 0.94 nA/°C B
TA=–40°Cto125°C –0.94 ±0.155 0.94
(2) InputOffsetVoltageDrift,InputBiasCurrentDrift,andInputOffsetCurrentDriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
(3) Currentisconsideredpositiveoutofthepin.
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