Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms 1998: Vol 135 Table of Contents

7 Pages·1998·1.5 MB·English

NH Nuclear Instruments and Methods in Physics Research B 135 (1998) xi-xvi
4,
NIM B
Beam interactions
with Materials & Atoms
ELSEVIER
Contents
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I. Energy loss, excitation, channelling
Stopping power in perspective
IY ote oe id phe ae bg hk we Ble 8 Pwd hae eee 6 We EEL wee es Sed a ea wes l
Atomic processes of high energy heavy ions channeled in a crystal
doi 8 ah arek bid ash KE be AK A ES CRN RULE Palace OO ks ete Chea oar eons Ne 16
Penetration of relativistic heavy ions through matter
I PO a A a lg igs Rie wtp abloce. le oie Sew wo kere ane es 25
Atomic collisions with antiprotons present and future programs
9 Sa era ght aka ine CS ar at COR os sie align Masia Rnehin lare at ectailins ire Ae SEE ae a Hh 35
Radiation emission and related processes for multi-GeV electrons and positrons in aligned crystals
ER RP eee aCe oi Pa EES Pe EO ee PO EE rare Le ee Pe Ee 40
Contribution of nuclear scattering to the energy loss distribution of protons in carbon foils
C.D. Denton, R. Garcia-Molina, I. Abril and N.R. Arista .....0.... ce.e e.ee .ee.e .ee e ee 45
Electronic interactions and nuclear scattering effects in the stopping power of carbon for fragmented H;
projectiles
C.D. Denton, R. Garcia-Molina, I. Abril and N.R. Arista a ee EE eS et Pere a eee eT Ee 50
Channeling of 7.6 MeV He in YBCO
J.U. Andersen, G.C. Ball, J.A. Davies, J.S. Forster, J.S. Geiger, R.P. Sharma and A. Uguzzoni ...... 56
Resonant coherent excitation of relativistic Ar'’* ions channeled in a Si crystal
T. Azuma, T. Ito, Y. Yamazaki, K. Komaki, M. Sano, M. Torikoshi, A. Kitagawa, E. Takada and T.
NS in: 2 'oaa eB SB tgs wie AR SA oe 0 We aa a Of sksd A he ld A ane oa 61
Formation of Li,,Ceo « 2, (m= 1—3, n=-1 to 4) endohedral fullerenes in the collision of Li* ion with Ceo
a ag a pall ky ie ee did Ale e ace mod aly Bik ANB eng eat ek 66
Theory of stopping power due to dielectric response in inhomogeneous many-electron systems
RY SsB oia ing wig Shia PS ae oe Ses aS Pa ON we ee eee ee aoe 71
Energy losses of B clusters transmitted through carbon foils
K. Narumi, K. Nakajima, K. Kimura, M. Mannami, Y. Saitoh, S. Yamamoto, Y. Aoki and H. Naramoto 77
Measurements of soft X-rays in collision of slow multiply charged Ar ions with an amorphous C target
S. Ninomiya, Y. Yamazaki, T. Azuma, K. Komaki, K. Kuroki and M. Sekiguchi ................ 82
Electron loss cross sections of high velocity H-like ions in carbon
H. Ogawa, N. Sakamoto, I. Katayama, I. Sugai, Y. Haruyama, M. Saito, K. Yoshida, M. Tosaki, Y. Susuki
I i Siro) ble oie ic ig Bate a hae Gea aed atl aie aca pala bMS WR wk OD Sa Ue OD 87
Z} corrections to the energy widths of the states of protons and antiprotons in an electron gas
PE Oe Te EOS TER OE SCS LT CER COLO RE POT UT eee 92
0168-583X/98/$19.00 © 1998 Elsevier Science B.V. All rights reserved
Xli Contents
Nonlinear corrections to the image potential of charged particles moving parallel to a metal surface
ee EE eee ee re. 2 ee ee ee ee ee ee ee
Electronic stopping power of periodic crystals
a ee ee ee ee a ee
Stopping powers of titanium for *He ions from 1.0 to 20.5 MeV
N. Sakamoto, H. Ogawa, N. Shiomi-Tsuda, M. Saitoh, U. Kitoba and M. Ota ..................
Electronic stopping powers of Au, Ag, Cu, Pd and Co metals for '’F ions at low velocity
rr CN sh ee kp bee cee Oe eee disco weweeees
Stopping powers of havar for protons from 0.45 to 3.0 MeV
N. Shiomi-Tsuda, N. Sakamoto, H. Ogawa, M. Saitoh and U. Kitoba ...................0.004.
Effects of ion-nucleus sizes on the electronic stopping power for heavy ions in solids
ENE ES SE er ae ee ee eee ee ae are e
Stopping power for MeV energy Au ions in silicon
rr rr re ek Chet ep awb eee eee eheereererebeesens
Energy loss of channeled 290 MeV/u C®* ions in a Si crystal
T. Ito, T. Azuma, K. Komaki, Y. Yamazaki, M. Sano, M. Torikoshi, A. Kitagawa, E. Takada and
NSee RA W OA OEE S OSEAN SE Ee eee
Electronic energy loss and effective charge of heavy ions in different targets
EES IE AA ORE Ee he ae ee eee ae re
Pair production by 5-150 GeV photons in the strong crystalline fields of germanium, tungsten and iridium
K. Kirsebom, Y.V. Kononets, U. Mikkelsen, $.P. Moller, E. Uggerhoj, T. Worm, C. Biino, K. Elsener,
S. Ballestrero, P. Sona, S.H. Connell, J.P.F. Sellschop, Z.Z. Vilakazi, A. Apyan, R.O. Avakian and
SS Mea area A ee ae eb ew ba Ma Ce oe ewe 8 ON
A sputtering calculation: Angular dependence of sputtering yields
SE a tia eG ae ae ee WEEE eee eee a. ee we
An extension of the o;-scaling for light ion transport to heavy ion transport
ET a eea
A software for the calculation of ion transport in solids
Q. Hou, Z. Luo and L. Teng ........... eee eee hee CORE A 6 SS CKO REET Oe 8 EWEN
Dependence of electronic stopping power on incident angle for fast ions moving near solid surfaces
Sg og al rg rh eG eb Ak ok 6S AN 8 aN e's wel eee 8
Stopping power for MeV 'C ions in solids
T. Zheng, X. Lu, Y. Zhai, Z. Xia, D. Shen, X. Wang and Q. Zhan
Lee Sn ee eee eS a ee ee ee es oe ee ee oe
II. Collision cascade, radiation damage
Subthreshold radiation-induced processes in the bulk and on surfaces and interfaces of solids
ES eG Se Ba ha pn Sy Gee Se ae eer ea eae a oh ee ae sse e 175
Electronic excitation effects in ion-irradiated high-7, superconductors
N. Ishikawa, Y. Chimi, A. Iwase, H. Maeta, K. Tsuru, O. Michikami, T. Kambara, T. Mitamura, Y. Awaya
i Si a eer rs 5 aaa en oak Yaa Wig bid be hale <6 oe ek aw Oe a a een gene 184
Investigation of the dependence of fraction of damage phase in garnet irradiated by | GeV Ar ions on electronic
energy loss and irradiation dose
Y. Jin, J. Han, Q. Meng, Y. Sun, C. Liu, R. Yang, Y. Wang, C. Zhang, C. Liand M. Hou ......... 190
Ce6o—Coo collisional reactions and defects pattern of fullerene-like products
ar MM oe Fo gah ea Se CESS See ake Oe wee eh eee eS eee 195
Displacement cascades in a borosilicate glass: Influence of the level of polymerization on the cascade
morphology
ee eeeee eae ke PORE ad MEWS 6 eee eS ee ee 201
Displacement cascades in metals and ordered alloys. Molecular dynamics simulations
N.V. Doan and R. Vascon 207
.. 2.8 Cb S'S 6. OF. eR Eee Bk ee OO. & eR Cae acre CS OS S-R Oe 8S ee C8 8 CS 8 ee SS E 2e
Contents Xili
Relaxation of metals: A model based on MD calculations
J. Dominguez-Vazquez, A.M.C. Pérez-Martin, J.J. Jiménez-Rodriguez and A. Gras-Marti .......... 214
Damage production in silicon irradiated with 112 MeV Ar ions
ie ee ee ee ee, ee Oo nO, 2, ee ES ekbei weee wre eee s vee 219
Formation of C-N compounds by N-implantation into diamond films
a a ea dhn at bid. ad a wk Re weel e waa alee ew da 224
Radiation effects of helium ions, neutrons, and gamma-rays on photo-stimulated luminescence
H. Kobayashi, H. Shibata, H. Eguchi, M. Sato, M. Etoh, M. Takebe and K. Abe ................ 229
Latent track effects of swift argon ions in polyimide
ie ss es ss a A, PEE fs heed eeebe dee leew dmed sée ee) 234
Heavy ion induced single event effects in semiconductor device
J. Liu, F. Ma, M. Hou, Y. Sun, J. Quan, Y. Zhou, Y. Zhong, J. Fan, Z. Chen and F. Feng......... 239
Effects of charge state and number of constituents of MeV projectiles on secondary ion emission yields from
LiF
ose, Sees Ep. Sy GUN TEs Hk IR vin aioe ck lek be he Ca ik ew ee beeen 244
lon bombardment induced compositional changes in GaP and InP surfaces
ec ey ees Uy ie ae a sp Sretb e602 A ee eee we 250
Thermal stability of small He-vacancy clusters in 316L stainless steel irradiated with 2.5 MeV He™ ions at
550°C
es ee: ne a aig gal ane paca eve eal Boe ahead wie be WR 256
Defect production in silicon irradiated with 750 MeV Ar ions
ee es ees SA ec i Ge Oe, I Oe I eo big oy oo. SR Vee eed edi ed ew eoldawen 260
Defect production and annealing induced by electronic energy loss in pure metal
Z.G. Wang, C. Dufour, M.D. Hou, G.M. Jin, Y.F. Jin, E. Paumier and M. Toulemonde........... 265
Effects of plasma irradiation on polysilane thin film
a a, Na a a ae ah gia EO ein CMs os o's OS ba bk ewe whee 270
Damage behaviours in LiNbO; crystals induced by MeV Au”® irradiation
B.-R. Shi, F. Lu, M.-Q. Meng, F.-X. Wang, W. Li, X.-D. Liu, K.-M. Wang and Z.-L. Wang ........ 275
Effects of MeV Si ion irradiation on the properties of shallow P + N junctions
Pein, es ec n,n ok adn wo 66 0 000 646.80 we ee oe eee ere ee 280
Angular distributions of particles sputtered from polycrystalline platinum
V.S. Chernysh, W. Eckstein, A.A. Haidarov, V.S. Kulikauskas, V.A. Kurnaev, E.S. Mashkova and
Ee PETS woe hE i ee Bas a ae rg Sn ee nT SW en ae ee 285
: Investigation of the energetic deposition of Au (0 0 1) thin films by molecular-dynamics simulation
Re SO Ooe gpra a ace Oo J 0 Oe ap oe We Ne eee es 289
Tracks in YIG induced by MeV Coo ions
5. ameen, A. Desens, GB. Tose Pieera and FF. Pesca .... nce ccc etic vere ctveseceeeevewens 295
III. Surface studies
Z\-oscillations in the stopping of slow ions during grazing ion-surface scattering
Rg. en Ss eS cub aa tM ON eae eA ewe eae C SSE ORES NW ees 302
Energy loss and resonant coherent excitation of fast highly charged ions on a Pt (1 1 0) surface
N. Hatke, M. Dirska, E. Luderer, A. Robin, M. Grether, A.N armann and W. Heiland ............ 307
Ion impact desorption of binary noble metal adsorbates on the Si (1 1 1) surface
i rr rr i, rr i, ee Ss ye ae Ke We be pS Cea OR ee Nee ee eee ee eee 314
Electron capture and loss processes on oxides and oxidised surfaces
S. Ustaze, L. Guillemot, R. Verucchi, S. Lacombe and V.A. Esaulov ...................20006- 319
Theory of proton neutralization based on the Kleber—Zwiegel model of screening electron pickup
ia ks we he ee he dk is We ee Raed OOO’ Fae aee 8 8 324
Structure evaluation of an alloy single crystal surface, Au3Pd (113), by low energy ion scattering
G. Pinsmeneki, M. Aschol, S. Spammer and W. Fleamd 2... ccc we reser ees enecens 331
XIV Contents
Large angle scattering of slow highly charged Ar ions interacting with a Au(111) surface
W. Huang, H. Lebius, R. Schuch, M. Grether, A. Spieler and N. Stolterfoht.................... 336
Molecular dynamics simulations of the C79—graphite interaction
I RO a en ee ee ee ae ee oe re 342
Simulations of Ceo in collision with diamond surfaces
EE DOI OS ee ee ee ee ee ee eee ee 346
The (1 1 1) surface of PbTe observed by high-resolution RBS
aehia be was eee KM eee ee cee ee ened 350
Equilibrium and non-equilibrium surface structures of Al/Pd (0 0 1)
EE a Te eee ee a eae 355
Stacking and structure of platinum on Cu (1 | 1) up to five monolayers
ee uv cs eee otha se veer eeesiveseueeecey 361
Surface-recoil processes of hydrogen on Si (1 0 0)-2 x 1:H and Si (1 0 0)-1 x 1:2H surfaces studied by low-
energy He ion beams
rr ee er ee eee 366
Charge state distributions after the scattering of fast He*-ions from an Al (1 | 1)-surface under a grazing angle
of incidence
H. Winter, G. Siekmann, H.W. Ortjohann, J.C. Poizat and J. Remillieux ......................
Effect of the surface topography on the grazing scattering of fast He-atoms from an Al (1 | 1)-surface
eeEERE SE REN CN OU RE RON BOD Oe wd
The investigation on the film deposition by energetic cluster impact
G. Yu, Y. Shi, J. Chai, D. Xie, H. Pan, G. Yang, J. Cao, H. Xuand D. Zhu ...................
The influence of ion energy on the structure of TiN films during filtered arc deposition
J.P. Zhao, Z.Y. Chen, X. Wang, Y.H. Yu, S.Q. Yang, T.S. Shi and X.H. Liu ...................
Foreign atom incorporation during metal silicide formation by ion beam synthesis
a a ed a Be cn. bce bo o0 bo. OS e'e 04 Se 0 Ae OA
Study on nanostructural morphology of Siz;N4/TiN multilayer synthesized by ion beam assisted deposition
L.D. Wang, J.L. He, X.M. He, J. Wang, Y.H. Wang, W.Z. Liand H.D. Li ....................
Scattering of 1960 eV Ne* from an AI surface
F. Ascione, G. Manico, P. Alfano, A. Bonanno, N. Mandarino, A. Oliva and F. Xu .............
Depth distribution of boron determined by slow neutron induced lithium ion emission
ee Eg Se Gale PNA sb eke RNa ed Se hee ee enews
Neutralization of intermediate-velocity Li emerging from Cs- and oxygen-covered Si (1 0 0) and GaAs (1 1 0)
surfaces
N. Imanishi, T. Ohdaira, K. Hadano, A. Aratake, M. Imai and A. Itoh ....................04. 413
Resonant coherent excitation of surface planar channeled B** ions
a ne os oe eb bd on lle A Ww dee mow! wre 6 eed aoe eCane ble we ese 419
IV. Secondary emission
Electronic sputtering process of SiO under heavy ion bombardment
N. Imanishi, S. Kyoh, A. Shimizu, M. Imai and A. Itoh ..... 1... cc cc cc ee ee eee eee ees 424
Influence of chemical structure and beam degradation on the kinetic energy of molecular secondary ions in keV
ion sputtering of polymers
A. Delcorte and P. Bertrand 430
eS 2 6 B.S es eoSOS Se BE SRO 4.8 CH ©. 0 Be Ore @ OS F418 SH CLES 2 SC ore oe 8 we eee a ee
Experimental and theoretical study of target thickness dependent electron yields induced by electrons in carbon
M. Caron, M. Beuve, H. Rothard, B. Gervais, A.D ubus and M. Rosler ...................245. 436
Experimental and computational comparative study of electron emission of thin carbon foils traversed by MeV
protons and hydrogen atoms in frozen charge states
A. Dubus, M. Rosler, Z. Vidovi¢, A. Billebaud, M. Fallavier, R. Kirsch, J.-C. Poizat and J. Remillieux 443
Contents XV
Secondary electron and positive ion emission from HTC superconductors by ion impact
a ll arr aha bbe ee 6!@ bie SN G-4e bebe E Oe Ole 0 Ora 450
Slow-electron cascade in potential and kinetic electron emission
RO ee ee ee a ee ee ee ee 455
Electron emission from slow Ne’* ions impinging on an Al surface
D. Niemann, M. Rosier, M. Grother and N. Stolterfolt .... . 0 ccc ec ccc cece eee isveeces 460
Indications for a new electron-ejection mechanism: Nuclear-track guided electrons induced by fast heavy ions
in insulators
G. Xiao, G. Schiwietz, P.L. Grande, N. Stolterfoht, A. Schmoldt, M. Grether, R. Kohrbriick, A. Spieler and
ere is as a eine le onl See hy bps ole Ack hee Re Aa 6K A SR ae 466
Emission of ground and metastable state Ni and Co atoms during ion-beam sputtering: Quantitative
measurements of population and kinetic energy distributions
P. Lievens, V. Philipsen, E. Vandeweert and R.E. Silverans ... 0... cc ccc ccc cece ees eceees
Refraction of the beam of charged particles during inclined transmission through a thin target
A.I. Kuzovlev, V.A. Kurnaev, V.S. Remizovich and N.N. Trifonov ..............e.ee2 e0ee0e e
Dependence of ion-induced kinetic electron emission on projectile nuclear charge Z,
ee a he Sa mea g ee Nk ig bp 6 i byN oo ae wa eee a @ acon
Nonlinear effects in the kinetic electron emission induced by slow ions in metals
J.1. Juaristi, M. Rosler, F.J. Garcia de Abajo, H. Kerkow and R. Stolle
aS oS a ee a oe ee wh ee ee ee a es ee ee
V. Ion implantation, thin film growth
Low energy ion beam assisted deposition of biaxially aligned yttria stabilized zirconia films on polycrystalline
Ni-Cr alloy
ees Ss te ve Re is Pee ee SO Bs I ok oo 6 oS cd 6 oy oO 6 ok we eee ewe ee eke
A molecular dynamics evidence for enhanced cluster beam epitaxy
Ne MT cea so 190 &:B oat ttS oa oko k dg a ep ee a Re hie ae LK WIEN ROR ee ae
Investigation of oxygen impurity in pulsed laser deposited GaN film using '°O(a,«)'°O resonance scattering
B.-R. Shi, N. Cue, R. Xiao, F. Lu, M.-Q. Meng, K.-M. Wang and L.-Q. Yang ..................
Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect
Sls Os WPe s es ee Os Ba PIES, Oe ks Seah aee cee eran ede eee aeseves
Surface modification of polyethylene terephthalate implanted by argon ions
a a es i od caine kbs ed oN OOM ESS Cede eee eee Pees
Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors
H.J. Whitlow, S.J. Roosendaal, M. El Bouanani, R. Ghetti, P.N. Johnston, B. Jakobsson, R. Hellborg, H.
Petersson, P. Omling, Z. Wang and CHIC collaboration .......0.... .ee.e e.ee .eee. e.e e
Low energy deuterium backscattering from niobium
A.A. Evanov, V.A. Kurnaev, D.V. Levchuk and A.A. Pisarev ......00.. .cee. ee.e e.ee .ee e
Structural characteristics and the control of crystallographic orientation of CeO, thin films prepared by laser
ablation
M.-Y. Li, Z.-L. Wang, S.-S. Fan, Q.-T. Zhao and G.-C. Xiong ...0..0.... e.e.e .e ee 535
Three-dimensional implantation profiles: The ratio of lateral to longitudinal straggling
D. Fink, M. Miller, R. Klett, B.-R. Shi, N. Cue and K.-M. Wang .............. 0.000002 e eee 540
Adhesion modification in (Cu, Nb, Ti)/SiO2 pairs by argon ion bombardment
a i A or ge ik aa meG ide oS eG ay. FPA Og 0.0 8 48g ewe ole wee 545
The luminescence of LaSi2_, formed by ion beam synthesis in (1 1 1) silicon wafer
a ee, Mg a gine ade Ske See Red be ed ce ew aed ee eee 550
On the measurement of degradation and recovery of scintillating plastic fibres
H.A. Klose, P. Goppelt-Langer, M. Sprenger, R. Nahnhauer, J. Bahr, F. Niedermeyer, D. Fink, K. Maier,
M. Miller and W.H. Chung 555
ee ee: we Oe ee A ye ee ee ee ee Oe ee ee ee ee ee ie ee oe oe ee oe ee ee eo ee oe ok oe ee ae ae ee oe oe
Properties of W implanted SnO, multilayer thin films
T. Zhang, T. Zhang, H. Zhang, B. Ma, X. Zhang, K. Xie and J. Hou 560
a. oe ae oe ee ee a ee on a oe ee of ee ae ee
Contents
Mechanism of neutral cluster beam deposition
re ee ee ee eee 564
Phosphorus electrical activation in high energy P and high flux silicon implanted silicon
a A re ag a Sei ob ab ee & 88 6d ete we ow Oo 88 ore 6 oe eek 570
I Sg a re) La we gei dle td 6G Wola ls ae aoe ce eee’ 575