Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 1995: Vol 102 Table of Contents

4 Pages·1995·1 MB·English

NH Nuclear Instruments and Methods in Physics Research B 102 (1995) xiii-xv
ED NUM B
sic Beam Interactions
with Materials & Atoms
ELSEVIER
Contents
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Section I. Interatomic potentials and theoretical methods
A multisite interaction expansion of the total energy in metals
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Comparison of channeling trajectories and ranges calculated by the continuum potential approximation
and Crystal-TRIM
a a a a a a ake he il a Ge ere w o Ole Oe ecene wle-ece 3
An improved molecular dynamics scheme for ion bombardment simulations
L.A. Marqués, J.E. Rubio, M. Jarafiz, L. Enriquez and J. Barbolla.................00005.- 7
The influence of impurity trapping on formation and growth of defect clusters in irradiated materials
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Relocation cross-sections in silicon: theoretical models
M.J. Caturia, V. Konoplev, I. Abril and A. Gras-Martl . 0... cc ccc ccc ccc eee e sevens 19
Acceleration of binary collision simulations in crystalline targets using critical angles for ion channeling
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Ab initio pseudopotential calculations of point defects and boron impurity in silicon
Jing Zhu, L.H. Yang, C. Mailhiot, T. Diaz de la Rubia and G.H. Gilmer ................4.. 29
Escape probabilities for electrons emitted during the interaction of slow highly charged ions with metal
surfaces
C. Lemell, HP. Winter, F. Aumayr, J. Burgd6rfer and C. Reinhold. .................205. 33
Section II. Displacement cascades and radiation effects in metals
Computer simulation of defect production by displacement cascades in metals
D.J. Bacon, A.F. Calder, F. Gao, V.G. Kapinos and S.J. Wooding ........00. e.e e5ee. e ee 37
Simulating the production of free defects in irradiated metals
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Surface effects on damage production during ion bombardment: a molecular dynamics study
ve. Goeey, TR.. AAVOURGR GE T. CURE GO TR RED 2 ccc ccc cc cc creer cece vesece 51
Molecular Dynamics Simulations of displacement cascades in metallic systems
et 66 cee bee hee ee ERD SPORE CON we ee OE ee wee eee Eee. 58
The correlation of defect distribution in collisional phase with measured cascade collapse probability
K. Morishita, H.L. Heinisch, S. Ishino and N. Sekimura ...... 6... 000. eee eee eee ees 67
Phase evolution under irradiation: Monte Carlo and mean-field modelings
P. Bellon, Y. Grandjean, M. Przybylowicz, F. Soisson and G. Martin .........00. ee0e 0ee e 72
Collision cascades in Zr,Fe, Zr,Fe and ZrFe,
L.M. Howe, D. Phillips, H.H. Plattner and J.D. Bonnett... 2... 0... 6 eee ee ee ee ee es 77
Computer simulations of disordering and amorphization kinetics in intermetallic compounds
M. Spaczér, A. Caro, M. Victoria and T. Diaz de la Rubia... . 2.1... ee ee ee ee ee ee es 81
Momentum in atomic collision cascades
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0168-/5958 /3$09X.5 0 © 1995 Elsevier Science B.V. All rights reserved
XIV Contents
Cascade statistics in the binary collision approximation and in full molecular dynamics
93
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Radiation cleansing of vacancies
103
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Simulation of plastic deformation of small iron and copper single crystals
107
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The effect of neutron energy on defect production in alumina
113
Sa ae a a eee eS eo Oe 6 Owe wee eece a ec bae'
Simulation of radiation induced structural transformation in glassy metals
ce 8 F eS FPP ee eee eee ee LeeLee eee ere eee 119
Impact of glissile interstitial loop production in cascades on void ordering and swelling saturation under
irradiation
ee ee ce ee ee on oe tae ee ae a et 125
Increasing the retained dose by plasma immersion ion implantation and . deposition
A. Anders, S. Anders, 1.G. Brown and K.M. Yu 132
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Dynamic Monte Carlo simulation for ion beam mixing
H.J. Kang, S.C. Lee, S.M. Jung, I.S. Choi and C.N. Whang 136
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CASSIS — a new Monte-Carlo computer program for channeling simulation of RBS, NRA and PIXE
141
An investigation of collision propagation in energetic ion initiated cascades in copper
I.R. Chakarov, R.P. Webb, R. Smith and K. Beardmore 145
2 ee @. 8 8.9 te 8 88 6 8 2 8 8.68 6 46484 68 4 2
Numerical analysis of stress effects on Frank loop evolution during irradiation in austenitic Fe-—Cr—Ni
alloy
Be, PE, We MPR CUED wo cece cree etree cdeseersveesseesesces 151
A new model of vacancy loop nucleation in irradiated metals
poe PPT STURT LE CLE CLEL ULE LULA eT e Teer 156
Section III. Radiation effects in semiconductors
Challenges for predictive process simulation in sub 0.1 jm silicon devices
FE Pe GE Ps GES 6c oem eee hese eeEse ee reseee ss resecsceresereces 160
Dynamic simulation of damage accumulation during implantation of BF] molecular ions into crystalline
silicon
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Modeling of ion implantation in single-crystal silicon
A.F. Tasch, S.-H. Yang and S.J. Morris
Defects from implantation in silicon by linked Marlowe—molecular dynamics calculations
M. Jaraiz, G.H. Gilmer, D.M. Stock and T. Diaz de la Rubia
an eae -— we oe Se Ce Se eo Sees 6 OS oe eae eo @ «
Round robin computer simulation of ion transmission through crystalline layers
K. Gartner, D. Stock, B. Weber, G. Betz, M. Hautala, G. Hobler, M. Hou, S. Sarite, W. Eckstein, J.J.
Jiménez-Rodriguez, A.M.C. Pérez-Martin, E.P. Andribet, V. Konoplev, A. Gras-Marti, M. Posselt,
M.H. Shapiro, T.A. Tombrello, H.M. Urbassek, H. Hensel, Y. Yamamura and W. Takeuchi
Process simulation challenges for ULSI devices: a users perspective
M.I. Current, R. Mathur, M. Kump and L.A. Larson .......2. eee. c.ece2 e2e e.ecc0ee s
Modelling of amorphous zones in semiconductors by using the randomization-and-relaxation method
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Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation
D.M. Stock, G.H. Gilmer, M. Jaraiz and T. Diaz de la Rubia ......................044.
A molecular dynamics study of energetic particle impacts on carbon and silicon
R. Smith, K. Beardmore, A. Gras-Marti, R. Kirchner and R.P. Webb ....................
Molecular dynamics simulations of implantation damage and recovery in semiconductors
M. Sayed, J.H. Jefferson, A.B. Walker and A.G. Cullis
Contents
lon bombardment of polyethylene
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Low energy ion implantation simulation using a modified binary collision approximation code
J. Arias, M. Jaraiz, L. Pelaz, L.A. Bail6n and J. Barbolla..... 0.0.0ee.e ee. ee e.e ee eee
Computer simulation of atomic displacements in Si, GaAs, and AlAs
M. Sayed, J.H. Jefferson, A.B. Walker and A.G. Cullis... 2... 0... eee eee eee eee ees
Comparison of BC and MD simulations of low-energy ion implantation
PEST EET ECE CLT CO CUO E RECUR CL
Improved efficiency in Monte Carlo simulation of ion implanted impurity profiles in single-crystal
materials
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Diffusion and interactions of point defects in silicon: molecular dynamics simulations
G.H. Gilmer, T. Diaz de la Rubia, D.M. Stock and M. Jaraiz .. 2... ee ee ee ee eee 247
Computer simulation of mechanisms of the SIMOX process
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Section IV. Sputtering and surface processes
Preferential sputtering of alloys: a molecular-dynamics study
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Temporal aspects of sputtering of TaC targets
Be OCT TESTE EET TER CCC TCC eT COREA EET LUTE
An instantaneous inelastic energy loss algorithm for use in molecular dynamics simulations
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Molecular Dynamics studies of cluster emission in sputtering
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Low energy ion irradiation of H-terminated Si(001): hydrogen sputtering, beam-induced (2 X 1) recon-
struction, and Si epitaxy
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Molecular dynamics simulation of amorphous silicon sputtering by Ar* ions
J.E. Rubio, L.A. Marqués, M. Jarafz, L.A. Bailén and J. Barbolla .......5.2. e. ee.e 6e es
Section V. Cluster—solid interactions
Cluster—solid interaction experiments
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Atomic excitation during the impact of ions and clusters
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Collision dynamics between gold clusters and gold thin films
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Simulation of heavy-ion cluster impact fusion
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