Nitride Semiconductor Technology. Power Electronics and Optoelectronic Devices

454 Pages·2020·17.739 MB·English

by  Fabrizio Roccaforte, Mike Leszczynski

NitrideSemiconductorTechnology
Nitride Semiconductor Technology
PowerElectronicsandOptoelectronicDevices
EditedbyFabrizioRoccaforteandMikeLeszczynski
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v
Contents
Preface xi
Acknowledgments xv
1 IntroductiontoGalliumNitridePropertiesandApplications 1
FabrizioRoccaforteandMikeLeszczynski
1.1 HistoricalBackground 1
1.2 BasicPropertiesofNitrides 4
1.2.1 MicrostructureandRelatedIssues 7
1.2.2 OpticalProperties 13
1.2.3 ElectricalProperties 16
1.2.4 Two-DimensionalElectronGas(2DEG)inAlGaN/GaN
Heterostructures 19
1.3 ApplicationsofGaN-BasedMaterials 23
1.3.1 OptoelectronicDevices 24
1.3.2 Power-andHigh-FrequencyElectronicDevices 26
1.4 Summary 30
Acknowledgments 31
References 31
2 GaN-BasedMaterials:Substrates,MetalorganicVapor-Phase
Epitaxy,andQuantumWellProperties 41
FerdinandScholz,MichalBockowski,andEwaGrzanka
2.1 Introduction 41
2.2 BulkGaNGrowth 42
2.2.1 HydrideVapor-PhaseEpitaxy(HVPE) 43
2.2.2 SodiumFluxGrowthMethod 45
2.2.3 AmmonothermalGrowth 46
2.3 MOVPEGrowth 51
2.3.1 BasicsAboutNitrideMOVPE 54
2.3.2 EpitaxyonForeignSubstrates 58
2.3.2.1 SapphireasaForeignSubstrate 58
2.3.2.2 GaNonSiCandSi 60
2.3.3 DefectReductionbyELOG,FACELO,etc. 62
2.3.4 InSituELOGbySiNDeposition 64
vi Contents
2.3.5 DopingofNitrides 64
2.3.6 GrowthofOtherBinaryandTernaryNitrides 67
2.4 InGaNQWs:GrowthandDecomposition 72
2.4.1 GrowthofInGaNQWsonPolar,Nonpolar,andSemipolarGaN
Substrates 72
2.4.2 OriginsofInFluctuations 75
2.4.3 HomogenizationofInGaNQWs 78
2.4.4 DecompositionoftheQWs 79
2.5 Summary 82
Acknowledgments 82
References 83
3 GaN-BasedHEMTsforMillimeter-waveApplications 99
KathiaHarroucheandFaridMedjdoub
3.1 Introduction 99
3.2 TargetedApplicationsforGaNMillimeter-waveDevices 99
3.2.1 High-PowerAmplification 100
3.2.2 BroadbandAmplifiers 102
3.2.3 5G 103
3.2.3.1 GaNfor5G 104
3.2.3.2 GaNBaseStationPAs 106
3.2.3.3 MovingForwardto6G 108
3.3 GaN-basedMaterialDesignsforMillimeter-waveApplications 108
3.3.1 IntrinsicCharacteristicsandComparisonwithOtherMaterialsforRF
Devices 108
3.3.2 SpecificMaterialSystemsforRFDevices 114
3.4 DeviceDesignandFabricationofMillimeter-waveGaNDevices 116
3.4.1 DescriptionofKeyProcessingStepsforVariousGaNDevice
Designs 116
3.4.1.1 DeviceScalingforMillimeterWave 116
3.4.1.2 T-shapedGateDesign 116
3.4.1.3 AdvancedOhmicContactTechnology 117
3.4.1.4 N-polarGaNHEMTs 118
3.4.1.5 AlN-BasedDevicePerformances 119
3.4.1.6 InAlGaN-BasedDevicePerformances 121
3.4.2 State-of-the-artMillimeter-waveGaNTransistors 122
3.5 OverviewofMMICPowerAmplifiers 123
3.5.1 MMICTechnologyUsingIII-NDevices 123
3.5.1.1 III–VMaterial-BasedMMICTechnology 123
3.5.1.2 PowerAmplifiers 124
3.5.1.3 Low-NoiseAmplifier 125
3.5.2 MMICExamplesfromKa-bandtoD-bandFrequencies 125
3.6 Summary 126
References 127
Contents vii
4 TechnologiesforNormally-offGaNHEMTs 137
GiuseppeGreco,PatrickFiorenza,FerdinandoIucolano,andFabrizio
Roccaforte
4.1 Introduction 137
4.1.1 ThresholdVoltageinAlGaN/GaNHEMTs 138
4.2 GaNHEMT“Cascode” 140
4.3 “True”Normally-offHEMTTechnologies 142
4.3.1 Recessed-gateHEMT 142
4.3.2 FluorinatedHEMT 145
4.3.3 Recessed-gateHybridMISHEMT 149
4.3.4 p-GaNGateHEMT 155
4.4 OtherApproaches 163
4.5 Summary 164
Acknowledgments 165
References 165
5 VerticalGaNPowerDevices 177
SrabantiChowdhuryandDongJi
5.1 Introduction 177
5.2 VerticalGaNDevicesforPowerConversion 177
5.3 VerticalGaNTransistors 178
5.3.1 CurrentApertureVerticalElectronTransistor(CAVET) 178
5.3.2 VerticalMOSFETs 182
5.4 High-VoltageDiodesinGaN 185
5.5 AvalancheElectroluminescenceinGaNP–NDiodes 186
5.6 ImpactIonizationCoefficientsinGaN 188
5.6.1 ImpactofImpactIonizationStudiesonPredictiveModeling 193
5.7 Summary 193
Acknowledgments 193
References 194
6 ReliabilityIssuesinGaNElectronicDevices 199
MilanTˇapajnaandChristianKoller
6.1 Introduction 199
6.1.1 ReliabilityTestingandFailureAnalysisofGaNHEMTs 200
6.2 ReliabilityofGaNHEMTsforRFApplications 204
6.2.1 AlGaN/GaNHEMTs 204
6.2.1.1 TrappingEffects 204
6.2.1.2 Gate-edgeDegradation 207
6.2.1.3 HotElectronDegradation 209
6.2.2 InAlN/GaNHEMTs 211
6.2.2.1 HotElectronDegradation 212
6.2.2.2 RoleofHotPhonons 214
6.2.3 ThermalIssuesinRFGaNHEMTs 215
viii Contents
6.3 ReliabilityandRobustnessofGaNPowerSwitchingDevices 219
6.3.1 ParasiticEffectsintheCarbon-DopedGaNBuffer 221
6.3.1.1 InsulationofGaNBufferbyCarbonDoping 221
6.3.1.2 Time-Dependent“Dielectric”Breakdown(TDDB)oftheGaN
Buffer 223
6.3.1.3 DynamicR DuetoBufferTrapping 225
DS,ON
6.3.2 GateDegradationinp-GaNSwitchingHEMTs 230
6.3.3 V InstabilitiesinGaNMISHEMTs 233
th
6.3.3.1 StudiesofPBTIinMISHEMTs 237
6.4 Summary 241
Acknowledgments 241
References 241
7 Light-EmittingDiodes 253
AmitYadav,HidekiHirayama,andEdikU.Rafailov
7.1 Introduction 253
7.2 State-of-the-ArtGaNLEDs 254
7.2.1 BlueLEDs 258
7.2.2 GreenLEDs 262
7.3 GaNWhiteLEDs:ApproachesandProperties 264
7.3.1 MonolithicLEDs 267
7.3.2 Phosphor-CoveredLEDs 271
7.4 AlGaNDeepUVLEDs 275
7.4.1 GrowthofHigh-QualityAlNandIncreasinginInternalQuantum
Efficiency(IQE) 278
7.4.2 AlGaN-basedUVCLEDs 281
7.4.3 IncreasingtheLightExtractionEfficiency(LEE) 282
7.5 Summary 287
Acknowledgments 288
References 288
8 LaserDiodesGrownbyMolecularBeamEpitaxy 301
GregMuziol,HenrykTurski,MarcinSiekacz,MartaSawicka,andCzeslaw
Skierbiszewski
8.1 Introduction 301
8.2 III-NGrowthFundamentalsbyPlasma-AssistedMBE 303
8.2.1 RoleofN-FluxforEfficientInGaNQWs 304
8.3 WideInGaNQWs–BeyondQuantum-ConfinedStarkEffect 305
8.4 Long-LivingLaserDiodesonBulkAmmono-GaN 313
8.5 LaserDiodeswithTunnelJunctions 316
8.5.1 StacksofVerticallyInterconnectedLaserDiodes 319
8.5.2 DistributedFeedbackLaserDiodes 321
8.6 Summary 324
Acknowledgments 324
References 325
Contents ix
9 EdgeEmittingLaserDiodesandSuperluminescent
Diodes 333
SzymonStanczyk,AnnaKafar,DarioSchiavon,StephenNajda,ThomasSlight,
andPiotrPerlin
9.1 LaserDiode:HistoryandDevelopment 333
9.1.1 OptoelectronicsBackground 333
9.1.2 GalliumNitrideTechnologyBreakthroughs 335
9.1.3 DevelopmentofNitrideLaserDiodes 337
9.2 DistributedFeedbackLaserDiodes 342
9.3 SuperluminescentDiodes 348
9.3.1 HistoryofSuperluminescentDiodeDevelopment 348
9.3.2 BasicSLDProperties 351
9.3.3 ChallengesforSLDOptimization 353
9.4 SemiconductorOpticalAmplifiers 354
9.5 Summary 357
References 358
10 GreenandBlueVertical-CavitySurface-EmittingLasers 367
YangMei,Rong-BinXu,HuanXu,andBao-PingZhang
10.1 Introduction 367
10.1.1 PropertiesandApplicationofGaNVCSELs 367
10.1.2 BriefHistoryandCurrentStatusofGaNVCSELs 368
10.1.3 GaNVCSELswithDifferentDBRs 369
10.1.3.1 GaNVCSELswithHybridDBRStructure 370
10.1.3.2 GaNVCSELswithDoubleDielectricDBRStructure 371
10.2 EfficiencyofHeatDissipationofDifferentDeviceStructures 372
10.2.1 SimulationofHeatProfileoftheDevice 372
10.2.2 DependenceofR onCavityLength 373
th
10.3 GreenVCSELsBasedonInGaNQDs 375
10.3.1 AdvantagesofQDsComparedwithQWs 375
10.3.2 GrowthandOpticalPropertiesofInGaNQDs 377
10.3.3 FabricationProcessofVCSELs 379
10.3.4 PropertiesofQDGreenVCSELs 379
10.4 GreenVCSELsBasedonCavity-EnhancedEmissionofLocalized
StatesinBlueEmittingInGaNQWs 380
10.4.1 CavityEffect 380
10.4.2 PropertiesofCavity-EnhancedGreenVCSELs 381
10.5 Dual-WavelengthLasingBasedonQD-in-QWActiveStructure 384
10.5.1 CharacteristicsofQD-in-QWStructure 384
10.5.2 LasingCharacteristicsofVCSELs 386
10.6 BlueVCSELswithDifferentLateralConfinements 386
10.6.1 DesignofIndex-GuidedStructure 386
10.6.2 EmissionPropertiesofVCSELswithLateralConfinement 388
10.7 Summary 389
References 390
x Contents
11 Integrationof2DMaterialswithNitridesforNovelElectronic
andOptoelectronicApplications 397
FilippoGiannazzo,EmanuelaSchilirò,RaffaellaLoNigro,PawelPrystawko,
andYvonCordier
11.1 Introduction 397
11.2 Fabricationof2DMaterialHeterostructureswithNitride
Semiconductors 400
11.2.1 Transferof2DMaterialsGrownonaForeignSubstrate 400
11.2.2 DirectGrowthof2DMaterialsonGroupIII-Nitrides 403
11.2.3 2DMaterialsasTemplatesfortheGrowthofNitrideSemiconductor
Films 407
11.3 ElectronicDevicesBasedon2DMaterials/GaNHeterojunctions 413
11.3.1 Band-to-bandTunnelingDiodesBasedonMoS /GaN
2
Heterojunctions 413
11.3.2 HotElectronTransistorswithGrapheneBaseandAl(Ga)N/GaN
Emitter 414
11.4 OptoelectronicDevicesBasedon2DMaterialJunctionswith
GaN 421
11.4.1 GaNLEDswithGraphene-TransparentConductiveElectrodes 421
11.4.2 MoS /GaNDeepUVPhotodetectors 427
2
11.5 ApplicationsofGrapheneforThermalManagementinGaN
HEMTs 428
11.6 Summary 431
Acknowledgments 431
References 432
Index 439