Nitride Semiconductor Light-Emitting Diodes (LEDs), Second Edition: Materials, Technologies, and Applications

826 Pages·2017·30.06 MB·English

by  Shyh-Chiang Shen

Nitride Semiconductor Light-Emitting
Diodes (LEDs), Second Edition
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Woodhead Publishing Series in Electronic and
Optical Materials
Nitride Semiconductor
Light-Emitting Diodes
(LEDs)
Materials, Technologies, and
Applications
Second Edition
Edited by
JianJang Huang
National Taiwan University, Taipei, Taiwan
Hao-Chung Kuo
National Chiao-Tung University, Hsinchu, Taiwan
Shyh-Chiang Shen
Georgia Institute of Technology, Atlanta, GA,
United States
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Contents
List of contributors xi
Preface xv
Part One Materials and fabrication 1
1 Molecular beam epitaxy (MBE) growth of nitride semiconductors 3
Qiandong Zhuang
1.1 Introduction 3
1.2 Molecular beam epitaxial (MBE) growth techniques 3
1.3 Plasma-assisted MBE (PAMBE) growth of nitride epilayers
and quantum structures 4
1.4 Nitride nanocolumn (NC) materials 11
1.5 Nitride nanostructures based on NCs 16
1.6 Conclusion 19
References 19
2 MOCVD growth of nitride semiconductors 25
Koh Matsumoto, Yoshiki Yano, Hiroki Tokunaga, Akinori Ubukata,
Guanxi Piao, Akira Mishima, Tadakazu Ikenaga, Yuji Tomita,
Toshiya Tabuchi
2.1 Introduction 25
2.2 Growth mechanism 28
2.3 Carbon incorporation and Mg doping of GaN 31
2.4 Blue and green MQW 32
2.5 UV materials growth 35
References 40
3 GaN on sapphire substrates for visible light-emitting diodes 43
Jae-Hyun Ryou, Wonseok Lee
3.1 Importance and historical backgrounds of GaN epitaxial growth
and sapphire substrates 43
3.2 Sapphire substrates 46
3.3 Strained heteroepitaxial growth on sapphire substrates 52
3.4 Epitaxial overgrowth of GaN on sapphire substrates 59
vi Contents
3.5 GaN growth on nonpolar and semipolar directions 65
3.6 Outlook of LEDs on sapphire substrates 67
References 67
4 Gallium nitride (GaN) on silicon substrates for LEDs 79
Matthew H. Kane, Nazmul Arefin
4.1 Introduction 79
4.2 An overview of gallium nitride (GaN) on silicon substrates 79
4.3 Silicon overview 80
4.4 Challenges for the growth of GaN on silicon substrates 83
4.5 Buffer-layer strategies 86
4.6 Device technologies 93
4.7 Conclusion 117
References 118
5 Phosphors for white LEDs 123
Zhanchao Wu, Zhiguo Xia
5.1 Introduction 123
5.2 Requirements for phosphors used in wLEDs 124
5.3 The state-of-the-art phosphors for wLEDs 127
5.4 New advances of future phosphors for wLEDs 133
5.5 Future development of wLEDs phosphors 192
Acknowledgments 193
References 193
6 Recent development of fabrication technologies of nitride LEDs
for performance improvement 209
Ray-Hua Horng, Dong-Sing Wuu, Chia-Feng Lin, Chun-Feng Lai
6.1 Introduction 209
6.2 GaN-based flip-chip LEDs and flip-chip technology 210
6.3 GaN FCLEDs with textured micro-pillar arrays 213
6.4 GaN FCLEDs with a geometric sapphire shaping structure 218
6.5 GaN thin-film photonic crystal (PC) LEDs 225
6.6 PC nanostructures and PC LEDs 227
6.7 Light emission characteristics of GaN PC TFLEDs 231
6.8 Conclusion 237
References 238
7 Nanostructured LED 243
Chien-Chung Lin, Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li,
Yu-Pin Lan, JianJang Huang, Hao-Chung Kuo
7.1 Introduction 243
7.2 Top-down technique for nanostructured LED 244
Contents vii
7.3 Bottom-up technique for GaN nanopillar substrates prepared
by molecular beam epitaxy 263
7.4 Other nanostructures of interest for LEDs 269
7.5 Conclusion 269
References 269
8 Nonpolar and semipolar LEDs 273
Yuh-Renn Wu, C.-Y. Huang, Yuji Zhao, James Speck
8.1 Motivation: limitations of conventional c-plane LEDs 273
8.2 Introduction to selected nonpolar and semipolar planes 277
8.3 Challenges in nonpolar and semipolar epitaxial growth 285
8.4 Light extraction for nonpolar and semipolar LEDs 288
References 291
Further reading 295
Part Two Performance of nitride LEDs 297
9 Efficiency droop in GaInN/GaN LEDs 299
Houqiang Fu, Yuji Zhao
9.1 Introduction 299
9.2 Physical mechanisms of current droop in GaInN/GaN LEDs 302
9.3 Progress of low-droop GaInN/GaN LEDs 311
9.4 Thermal droop in GaInN/GaN LEDs 320
References 323
10 Photonic crystal nitride LEDs 327
Martin D.B. Charlton
10.1 Introduction 327
10.2 Photonic crystal technology 335
10.3 Improving LED extraction efficiency through PC surface
patterning 341
10.4 PC-enhanced light extraction in P-side up LEDs 347
10.5 Modelling PC-LEDs 350
10.6 PC-enhanced light extraction in N-side up LEDs 365
10.7 Summary 373
10.8 Conclusions 374
References 376
11 Nitride LEDs based on quantum wells and quantum dots 377
J. Verma, S.M. Islam, A. Verma, V. Protasenko, D. Jena
11.1 Light emitting diodes 377
11.2 Polarization effects in III-nitride LEDs 387
viii Contents
11.3 Current status of III-nitride LEDs 397
11.4 Modern LED designs and enhancements 404
References 405
Further reading 413
12 Colour tuneable LEDs and pixelated micro-LED arrays 415
Yuk Fai Cheung, Zetao Ma, Hoi Wai Choi
12.1 Introduction: motivation for color tuning and review of existing
technologies 415
12.2 Stacked LEDs 416
12.3 Group-addressable pixelated micro-LED arrays 430
12.4 Conclusions 436
Acknowledgments 438
References 438
13 Reliability of nitride LEDs 441
Tzung-Te Chen, Chun-Fan Dai, Chien-Ping Wang, Han-Kuei Fu,
Pei-Ting Chou, Wen-Yung Yeh
13.1 Introduction 441
13.2 Reliability testing of nitride LEDs 441
13.3 Evaluation of LED degradation 444
13.4 Degradation mechanisms 447
13.5 Conclusion 452
References 452
14 Physical mechanisms limiting the performance and the reliability
of GaN-based LEDs 455
Carlo De Santi, Matteo Meneghini, Alberto Tibaldi, Marco Vallone,
Michele Goano, Francesco Bertazzi, Giovanni Verzellesi,
Gaudenzio Meneghesso, Enrico Zanoni
Introduction 455
14.1 Modeling the performance-limiting effects in GaN-based
LEDs 456
14.2 Degradation of LEDs under electrical and thermal stress 467
14.3 Conclusions 481
References 481
15 Chip packaging: encapsulation of nitride LEDs 491
Xiaobing Luo, Run Hu
15.1 Functions of LED chip packaging 491
15.2 Basic structure of LED packaging modules 495
15.3 Processes used in LED packaging 498
15.4 Optical effects of gold wire bonding 502
15.5 Optical effects of phosphor coating 505
15.6 Optical effects of freeform lenses 511
Contents ix
15.7 Thermal design and processing of LED packaging 515
15.8 Conclusion 524
References 524
Part Three Applications of nitride LEDs 529
16 White LEDs for lighting applications 531
Richard Kotschenreuther
16.1 White LEDsddefinition of area 531
16.2 Why “white LEDs”? 531
16.3 The three-side-approach for lighting applications 531
16.4 Fields of application 542
16.5 LED light sources in the connected world 546
16.6 Outlook 547
Abbreviations and Acronyms 549
References 549
Further reading 550
Annex 1 551
17 Ultraviolet LEDs 553
Hideki Hirayama
17.1 Research background of deep ultraviolet light-emitting diodes 553
17.2 Growth of low TDD AlN layers on sapphire 557
17.3 Marked increases in IQE 561
17.4 Aluminum gallium nitride-based DUV-LEDs fabricated
on high-quality aluminum nitride 568
17.5 Increase in EIE and LEE 576
17.6 Conclusions and future trends 583
References 584
18 Infrared emitters using III-nitride semiconductors 587
Akhil Ajay, Yulia Kotsar, Eva Monroy
18.1 Introduction 587
18.2 High-indium-content alloys for IR emitters 587
18.3 RE-doped GaN emitters 590
18.4 III-nitride materials for ISB optoelectronics 591
18.5 ISB devices 601
18.6 Conclusions 605
References 606
19 LEDs for liquid crystal display (LCD) backlighting 619
Chi-Feng Chen
19.1 Introduction 619
19.2 Types of LED LCD backlighting units 619