Nanotechnology for microelectronics and optoelectronics

301 Pages·2006·3.493 MB·English

by  Jose Martinez-Duart, Raul J. Martin-Palmer, Fernando Agullo-Rueda

NANOTECHNOLOGY FOR
MICROELECTRONICS AND
OPTOELECTRONICS
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NANOTECHNOLOGY FOR
MICROELECTRONICS AND
OPTOELECTRONICS
J.M. Martínez-Duart
Director of the Department of Applied Physics,
Universidad Autónoma de Madrid,
Madrid, Spain
R.J. Martín-Palma
Universidad Autónoma de Madrid,
Madrid, Spain
F. Agulló-Rueda
Materials Science Institute of Madrid, CSIC,
Madrid, Spain
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Firstedition2006
ISBN-13:9780080445533
ISBN-10:0080445535
PrintedinGreatBritain.
06 07 08 09 10 10 9 8 7 6 5 4 3 2 1
Preface
The aim of this book is to outline the basic physical concepts and device applications
related to nanoscience and nanotechnology in semiconductor materials. As illustrated in
the book, when the dimensions of a solid are reduced to the size of the characteristic
lengths of electrons in the material (de Broglie wavelength, coherence length, local-
ization length, etc.), new physical properties due to quantum effects become apparent.
These novel properties are manifested in various ways: quantum conductance oscilla-
tions, quantum Hall effects, resonant tunnelling, single-electron transport, etc. They
can be observed in properly built nanostructures, such as semiconductor heterojunc-
tions, quantum wells, superlattices, etc. which are described in detail in the text. The
effects shown by these quantum structures are not only significant from a purely scien-
tific point of view–several Nobel prices were awarded during the last decades to their
discoverers–but also have important practical applications in most of last generation
microelectronicandoptoelectronicdevices.
Only about three decades have elapsed since the pioneering work of Esaki, Tsu, and
Chang at the beginning of the 1970s at IBM that established the bases for many of
the new effects later observed in quantum wells and superlattices. In order to observe
these effects, sophisticated techniques such as molecular beam epitaxy, allowing layer-
by-layer growth, and doping of semiconductor nanostructures were routinely set up in
manyadvancedresearchlaboratoriesduringthe1980s.Sinceallthesenewdevelopments
took place in a relatively short time, it has been difficult to timely incorporate them into
the university curricula. However, recently most leading universities have updated their
curricula and are offering, both at the graduate and undergraduate levels, courses such
as:nanoscalescienceandengineering,nanoscalestructuresanddevices,quantumdevices
andnanostructures,etc.EvenMastersDegreesarebeingofferedinnanoscalescienceand
engineering. Frequently these courses and titles are included in the schools of physics,
materialsscience,andvariousengineeringschools(electrical,materials,etc.).
Inouropinion,thereisalackofcomprehensivetextbooksatthegeneralundergraduate
level dealing with nanoscience and nanotechnology. A few general texts on solid state
physics are starting to include several sections, or in some cases, one full chapter, on
nanoscalescience.Frequently,thismaterialhasbeenaddedasthelastchapterofthenew
editions of these well-known texts, sometimes without really integrating it in the rest of
the book. However, the situation is better for specialized books which can be partially
used in graduate courses, since in the last fifteen years a series of excellent texts dealing
v
vi Preface
with nanotechnology and low-dimensional semiconductors have been published. A full
reference of these texts is given in the “further reading” sections after the corresponding
chapters of our book. They include, among others, the texts of Weisbuch and Vinter
(1991), Grahn (1995), Kelly (1995), Ferry and Goodnick (1997), Davies (1999), Mitin,
Kochelap,andStroscio(1999),andBimberg,Grundmann,andLedenstov(2001).
Our book is mainly addressed to the final year undergraduate and beginning graduate
studentsinphysics,materialsscience,andseveralkindsofengineerings(electrical,mate-
rials,etc.)withtheobjectiveinmindthatitcouldbeusedinonesemester.Alternatively,
thebookcanbeofinteresttoscientistsandpracticingengineerswhowanttoknowabout
the fundamental aspects of nanoscience and nanotechnology. Our intention has been to
write an introductory book on nanoscience and nanotechnology that starting with the
physicsoflow-dimensionalsemiconductorsandquantumheterojunctionswouldbuildup
to the treatment of those new electronic, transport, and optical properties, which arise as
aconsequenceofbothenergyquantizationofelectronsinpotentialwellsandthereduced
dimensionality (2D, 1D, 0D) of nanostructures. This process is sequentially carried out
showing that the physical concepts involved can be understood in terms of quantum-
mechanical and statistical physics theories at the level being taught in the undergraduate
school. This is therefore the only real prerequisite for readers to know in advance. We
hope that we have succeeded in our aim to show that the concepts related to the already
mature field of nanoscience are not more difficult to grasp (with the exception perhaps
of the quantum Hall effects) than those corresponding to bulk solid state and semicon-
ductor physics. Once the basic concepts of quantum nanostructures are presented in a
unifying scheme, the last chapters of the text deal with applications of nanotechnologies
inmicroelectronicsandoptoelectronics.
Intheprocessofwritingthisbook,wehavealwaystakenintoconsiderationthemain
objectivesalreadymentioned.Otherconcernswerethefollowing:(i)Theextensionofthe
bookhasbeenlimitedsothatitcouldbetaughtinonesemester.Thisisespeciallythecase
for students having a good knowledge of bulk semiconductor solid state physics, since
Chapters2and3canthenbeomitted.Inaddition,somerelevanttopicsinnanotechnology,
likecarbonnanotubesorbiomolecularstructures,havebeenomitted.(ii)Wehavetriedto
makeasclearaswecouldthenewphysicalconceptsandpropertiespresentedinthebook,
although taking care not to lose the necessary scientific rigour. We have done the same
with the mathematical derivations which have been kept as simple as possible. In those
cases implying a lot of calculus we have quoted the result, giving the corresponding
reference,orhavequotedtheresultsofsimilarcalculationsinsolidstatephysics,suchas,
in the applications of the Fermi golden rule. (iii) Due to the introductory character and
academic orientation of the book, the bibliography presented at the end of each chapter
has been kept to a minimum. Anyway, credit is always given to those scientists who
discovered the new phenomena presented in the book or formulated the most admitted
theories for their explanation. (iv) To test the understanding of new concepts, a set of
Preface vii
exercises is included at the end of each chapter. We have tried that the exercises have
a medium degree of difficulty and therefore have avoided those related to extending the
theory presented in the text to more difficult cases. We have also given numerous hints
directing the students on how to solve the exercises. It is important that the students get
the correct final numerical results so that they get an idea of the approximate values of
thephysicalmagnitudesinvolvedinnanotechnologies.

About the Authors
J.M. Martínez-Duart obtained his Masters Degree in Physics at the University of
MichiganandhisPhDbothatThePennsylvaniaStateUniversityandMadridUniversity.
He is the author of about three hundred publications in reputed scientific journals. Dur-
ing the 1970s, he was Assistant Professor at Penn State University and Rensselaer
Polytechnic Institute, and Research Visiting Scientist at the IBM T. J. Watson Research
Center. Later he has been the Director of the Solid State Physics Institute (CSIC) at
Madrid, and the Applied Physics Department at Universidad Autónoma (Madrid). He
has been the President of the European Materials Research Society during the period
2000–2001.Duringthelastfifteenyearshehasbeenworkingontheelectronicandopto-
electronicpropertiesofnanostructuredmaterials.Inthefieldofnanotechnology,Professor
Martínez-Duart has been director of several courses, co-author of several books, and
Invited Editor of two volumes, “Materials and Processes for Submicron Technologies”
and“CurrentTrendsinNanotechnologies”,bothpublishedbyElsevierin1999and2001,
respectively.
Raúl J. Martín-Palma received the Masters Degree inApplied Physics in 1995 and the
PhDinPhysicsin2000,bothfromtheUniversidadAutónomadeMadrid(Spain).Hehas
been Post-Doctoral Fellow at the New Jersey Institute of Technology (Newark, USA).
In spite of his youth, he is the author of over fifty research publications, most of them
on electrical and optoelectronic properties of nanostructured materials, published in high
impact factor journals. He has been invited to give seminars and conferences at several
international scientific congresses. He has received several awards for young scientists
forhisresearchonnanostructuredmaterialsfromtheMaterialsResearchSociety(USA),
European Materials Research Society, and Spanish Society of Materials. He is currently
ProfessorofPhysicsattheUniversidadAutónomadeMadrid.
F. Agulló-Rueda is currently a researcher at the Materials Science Institute of Madrid,
which belongs to the Spanish National Research Council (CSIC). He spent several years
attheMax-PlanckInstituteforSolidStateResearchandattheIBMT.J.WatsonResearch
Center, where he worked on electro-optic effects in semiconductor superlattices. He has
published over seventy papers on the optical properties of materials and semiconductor
nanostructuresandhascontributedtoseveralbooks.
ix