Nanoscale Devices: Physics, Modeling, and Their Application

453 Pages·2019·28.315 MB·English

by  Brajesh Kumar Kaushik

Nanoscale Devices

Nanoscale Devices
Physics, Modeling, and Their Application
Edited by
Brajesh Kumar Kaushik
CRC Press
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Library of Congress Cataloging‑in‑Publication Data
Names: Kaushik, Brajesh Kumar, editor.
Title: Nanoscale devices : physics, modeling, and their application / [edited
by] Brajesh Kumar Kaushik.
Description: Boca Raton : Taylor & Francis, a CRC title, part of the Taylor &
Francis imprint, a member of the Taylor & Francis Group, the academic
division of T&F Informa, plc, 2019. | Includes bibliographical references
and index.
Identifiers: LCCN 2018026865| ISBN 9781138060340 (hardback : acid-free paper)
| ISBN 9781315163116 (ebook)
Subjects: LCSH: Nanoelectronics. | Nanoelectromechanical systems. |
Nanotechnology.
Classification: LCC TK7874.84 .N3835 2019 | DDC 621.381--dc23
LC record available at https://lccn.loc.gov/2018026865
Visit the Taylor & Francis Web site at
http://www.taylorandfrancis.com
and the CRC Press Web site at
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To my Father, Late Mr. Jai Prakash Kaushik, and my Mother, Mrs. Karuna Kaushik,
for their affection and untiring efforts in my upbringing. Also dedicated to my
wife, Supriya, and our loving son, Partha Kaushik. Life has been really enjoyable
because of the efforts of all my friends and students. Dedicated to all of them.
Brajesh Kumar Kaushik

Contents
Preface ..............................................................................................................................................ix
Acknowledgment ........................................................................................................................xiii
Editor...............................................................................................................................................xv
Contributors ................................................................................................................................xvii
Section I Nanoscale Transistors
1. Simulation of Nanoscale Transistors from Quantum and Multiphysics
Perspective ...............................................................................................................................3
Zhipeng Dong, Wenchao Chen, Wen-Yan Yin, and Jing Guo
2. Variability in Nanoscale Technology and EδDC MOS Transistor .............................25
Sarmista Sengupta and Soumya Pandit
3. Effect of Ground Plane and Strained Silicon on Nanoscale FET Devices................51
Saurabh Chaudhury and Avtar Singh
Section II Novel MOSFET Structures
4. U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor:
Structures and Characteristics ...........................................................................................69
Deepshikha Bharti and Aminul Islam
5. Operational Characteristics of Vertically Diffused Metal Oxide
Semiconductor Field Effect Transistor .............................................................................91
Deepshikha Bharti and Aminul Islam
6. Modeling of Double-Gate MOSFETs .............................................................................109
D. Nirmal and J. Ajayan
Section III Modeling of Tunnel FETs
7. TFETs for Analog Applications .......................................................................................127
Marcio Dalla Valle Martino, Paula Ghedini Der Agopian, Joao Antonio Martino,
Eddy Simoen, and Cor Claeys
8. Dual Metal–Double Gate Doping-Less TFET: Design and Investigations ............159
Ramandeep Kaur, Rohit Dhiman, and Rajeevan Chandel
vii
viii Contents
Section IV Graphene and Carbon Nanotube Transistors
and Applications
9. Modeling of Graphene Plasmonic Terahertz Devices ................................................175
Neetu Joshi and Nagendra P. Pathak
10. Analysis of CNTFET for SRAM Cell Design ...............................................................205
Shashi Bala and Mamta Khosla
11. Design of Ternary Logic Circuits Using CNFETs........................................................225
Chetan Vudadha and M. B. Srinivas
Section V Modeling of Emerging Non-Silicon Transistors
12. Different Analytical Models for Organic Thin-Film Transistors: Overview
and Outlook .........................................................................................................................257
W. Boukhili and R. Bourguiga
13. A Fundamental Overview of High Electron Mobility Transistor
and Its Applications ...........................................................................................................275
D. Nirmal and J. Ajayan
Section VI Emerging Nonvolatile Memory Devices
and Applications
14. Spintronic-Based Memory and Logic Devices .............................................................301
Jyotirmoy Chatterjee, Pankaj Sethi, and Chandrasekhar Murapaka
15. Fundamentals, Modeling, and Application of Magnetic Tunnel Junctions...........337
Ramtin Zand, Arman Roohi, and Ronald F. DeMara
16. RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit
Applications .........................................................................................................................369
Firas Odai Hatem, T. Nandha Kumar, and Haider A. F. Almurib
17. Evaluation of Nanoscale Memristor Device for Analog and Digital
Application ..........................................................................................................................393
Jeetendra Singh and Balwinder Raj
Index .............................................................................................................................................425
Preface
The pace of advances in nanoscale materials and devices has led to a gamut of develop-
ments in the emerging areas of science and technology that has permeated to almost all
applications. The rapid growth of the electronics industry can be attributed by and large to
the continuous progress in nanotechnology driven by a relentless pursuit of innovation.
With the new prospects from emerging nanomaterial and devices, a frontier challenge
is to gain insight into their behavior and properties. The aim of this book is to integrate
developments in the area of nanoelectronics devices and systems, evolving from a unify-
ing set of principles and practices. This book is a collective effort of well-known pioneers
and many leading researchers in the field of nanoelectronics, nanomaterials, plasmonics,
and related areas, providing extraordinary breadth and depth of coverage. To comprehend
this book, a basic knowledge of semiconductor physics is assumed. In 17 chapters, grouped
under 6 subareas, the book eloquently covers the major advancements in the field of nano-
electronics. The book presents an interdisciplinary perspective of nanoelectronics and can
serve as a comprehensive reference for researchers and academicians working in the area
of nanotechnology.
The continuous miniaturization of transistors has been considered a primary reason
behind the progress in the electronics industry. New approaches based on quantum
mechanics and a multiphysics perspective are now required to accurately model these
nanoscale transistors. The first section of this book provides a comprehensive overview
of quantitative understanding of the operation of nanoscale transistors. It begins with
an introduction to nanoscale transistors, their current state of development, and various
challenges associated with commercialization of the technology. Chapter 1 of the book
deals with the recent development in modeling and simulation of nanoscale transistors.
A multiphysics approach has been used to capture the relevant physics at the atomic level
while taking quantum effects into account. The major challenge to the present and next-
generation nanoscale device is the variability that requires serious attention. Considering
this fact, Chapter 2 discusses the major sources of variability in nanoscale devices and
circuits. To increase the robustness of a design, the impact of process, voltage, and temper-
ature variation has been modeled and analyzed using technology computer-aided design
(TCAD) simulations. An epitaxial delta-doped channel (EδDC) MOS transistor is a prom-
ising approach for extending the scalability of bulk metal oxide semiconductor (MOS)
technology for low-power system-on-chip applications. The subsequent part of the chapter
discusses the structure and characteristics of EδDC MOS transistors and compares them
with a conventional MOS transistor.
For nanoscale semiconductor field-effect transistor (FET) devices, several efforts have
been made to reduce the short-channel effects (SCEs). For controlling short-channel effects, a
ground plane can be formed in the silicon substrate underneath the buried oxide. Chapter 3
compiles the application of ground plane and strained engineering for high-performance
silicon on insulator (SOI) FET devices. The first part introduces the concept of ground plane
in SOI structures and the method of incorporation in fully depleted silicon on insulator
(FDSOI) and fin field-effect transistor (FinFET) devices. The later part of the chapter dis-
cusses the strained-silicon concept to boost the device performance through higher carrier
mobility and reduced source/drain resistance. The chapter discusses the basic concepts for
ix