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Multilayered Low Temperature Cofired Ceramics (LTCC) Technology This page intentionally left blank Multilayered Low Temperature Cofired Ceramics (LTCC) Technology Yoshihiko Imanaka Fujitsu Laboratories, Ltd. Japan Springer eBookISBN: 0-387-23314-8 Print ISBN: 0-387-23130-7 ©2005 Springer Science + Business Media, Inc. Print ©2005 Springer Science + Business Media, Inc. Boston All rights reserved No part of this eBook maybe reproducedor transmitted inanyform or byanymeans,electronic, mechanical, recording, or otherwise, without written consent from the Publisher Created in the United States of America Visit Springer's eBookstore at: http://ebooks.springerlink.com and the Springer Global Website Online at: http://www.springeronline.com This book is dedicated to ALL I love. This page intentionally left blank Contents Dedication v List of Figures xi List of Tables xxv Preface xxix Acknowledgments xxxi 1. Introduction 1 1.1 Briefhistorical review 2 1.2 Typical material 4 1.3 Typicalmanufacturing process 4 1.4 Typical product types 5 1.5 Characteristics of LTCC 6 1.5.1 Highfrequency characteristics 6 1.5.2 Thermal stability 9 (low thermal expansion, good thermal resistance) 1.5.3 Integration of passive components 10 1.6 Trends in materials developed by relevant companies 11 1.7 Subject of the book 12 References 16 Part 1Material technology 19 2.Ceramic material 21 2.1 Introduction 21 2.2 Low temperature firing 23 2.2.1 Fluidity of glass 24 2.2.2 Crystallization of glass 26 2.2.3 Foaming of glass 33 2.2.4 Reaction between glass and ceramic 36 2.3 Dielectric characteristics 36 2.3.1 Dielectric constant 36 2.3.2 Dielectric loss 41 2.4 Thermal expansion 42 2.5 Mechanical strength 45 viii Multilayered LTCC Technology 2.5.1 Strengthening the glass phase 47 2.5.2 Thermal shock resistance 51 2.6 Thermal conductivity 54 References 55 3.Conducting material 59 3.1 Introduction 59 3.2 Conductive paste materials 61 3.3 Metallization methods for alumina ceramics 62 3.3.1 Thick film metallization 62 3.3.1.1 High temperature process type 62 (Mo-Mn method) 3.3.1.2 Low temperature process type 63 3.3.2 Cofiring metallization 64 3.3.2.1 Metallization for HTCC 66 3.4 Conductivity 66 3.5 Suitability for co-sintering 68 3.6 Adherence 72 3.7 Migration resistance 74 3.8 Bondability 78 (solderwetability and wire bondability) References 79 4.Resistor materials and high K dielectric materials 83 4.1 Introduction 83 4.2 Resistor materials 84 4.2.1 Ruthenium oxide/glass material 87 4.2.2 The thermal stability of ruthenium oxide 89 4.3 High K dielectric material 92 4.3.1 Issues with low oxygen partial pressure 93 atmosphere firing (point defects and semiconductor formation) References 98 Part 2 Process technology 101 5. Powder preparation and mixing 103 5.1 Introduction 103 5.2 Inorganic ceramic materials 104 5.3 Organic materials 105 5.3.1 Binder 106 5.3.2 Plasticizer 108 5.3.3 Dispersing agent and dispersibility of slurry 110 References 114