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Multigroup Equations for the Description of the Particle Transport in Semiconductors (Series on Advances in Mathematics for Applied Sciences, V. 70) (Series ... in Mathematics for Applied Sciences) PDF

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MULTIGROUP EQUATIONS FOR THE DESCRIPTION OF THE PARTICLE TRANSPORT IN SEMICONDUCTORS This page intentionally left blank Series on Advances in Mathematics for Applied Sciences - Vol. 70 MULTIGROUP EQUATIONS FOR THE DESCRIPTION OF THE PARTICLE TRANSPORT IN SEMICONDUCTORS Martin Galler Graz University of Technology, Austria r p World Scientific - NEW JERSEY LONOON SINGAPORE * BElJlNG SHANGHAI HONG KONG TAIPEI CHENNAI Published by World Scientific Publishing Co. Pte. Ltd. 5 Toh Tuck Link, Singapore 596224 USA oflce: 27 Warren Street, Suite 401-402, Hackensack, NJ 07601 UK ofice: 57 Shelton Street, Covent Garden, London WC2H 9HE Library of Congress Cataloging-in-PublicationD ata Galler, Martin, 1977- Multigroup equations for the description of the particle transport in semiconductors/ Martin Galler. p. cm. -- (Series on advances in mathematics for applied sciences ; v. 70) ISBN 981-256-355-5 (alk.p aper) 1. Transport theory--Mathematics. 2. Semiconductors--Mathematics. I. Title. 11. Series. QC793.3.V G35 2005 530.13’8-dc22 200504943 I British Library Cataloguing-in-PublicationD ata A catalogue record for this book is available from the British Library. Copyright Q 2005 by World Scientific Publishing Co. Pte. Ltd. All rights resewed. This book, or parts thereoj may not be reproduced in any form or by any means, electronic or mechanical, including photocopying, recording or any information storage and retrieval system now known or to be invented, without written permission from the Publisher. For photocopying of material in this volume, please pay a copying fee through the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, USA. In this case permission to photocopy is not required from the publisher. Printed in Singapore by World Scientific Printers (S) Pte Ltd Fur den wichtigsten Menschen in meinem Leben. This page intentionally left blank Preface Accurate semiconductor device simulation is mainly based on Monte Carlo methods. However, there are essential advantages gained by directly solving the Bloch-Boltzmann-Peierls equations, which govern the dynamics of car- riers and phonons in semiconductors. In this book, an attempt is made to introduce such deterministic solution techniques, called multigroup model equations, especially for describing the particle transport in 111-V com- pound semiconductors. First, we present a multigroup model to the Boltzmann equations gov- erning the transient transport regime in polar semiconductors. Special effort is invested in an accurate description of the coupled hot-electron hot- phonon system. The related conservation laws for the electron density and the total energy density of the multigroup model equations are deduced. This physically motivated, discrete model is used for studying the transport properties of indium phosphide and gallium arsenide in response to a time- depending external electric field. The results are compared to experimental and theoretical data. Second, a multigroup transport model for describing degenerated car- rier gases is deduced. These model equations are based on a general carrier dispersion law and contain the full quantum statistics of both, the carriers and the phonons. We prove the boundedness of the solution according to the Pauli principle and study the conservational properties of the multi- group equations. Moreover, the existence of a Lyapounov functional to the proposed model equations is proved and expressions for the equilibrium solution are given. Furthermore, the two-dimensional electron transport at an AlGaN/GaN heterojunction in the presence of strain polarization fields is simulated with the help of a multigroup model. The envelope wave functions for the con- vii viii Multigroup Equations for Particle Transport in Semiconductors fined electrons are calculated using a self-consistent Poisson-Schrodinger solver. The electron gas degeneracy and hot phonons are included in these transport equations. Finally, a multigroup-WEN0 solver for the non-stationary Boltzmann- Poisson system for semiconductor device simulation is constructed. The proposed numerical technique is applied for investigating the carrier trans- port in bulk silicon, in a silicon n+ - n - n+ diode, in a silicon MESFET and in a silicon MOSFET as well as in bulk GaAs, in a GaAs n+ - n - n+ diode and in a GaAs MESFET. Additionally, the obtained results are compared to those of a full WEN0 solver and Monte Carlo simulations. This book is based in the doctoral thesis, which I wrote at the Insti- tute of Theoretical and Computational Physics of the Graz University of Technology. First of all I would like to thank my supervisors, Prof. Dr. Fer- dinand Schiirrer and Prof. Dr. Armando Majorana. It was Prof. Schiirrer who encouraged me to write both the diploma thesis and the doctoral the- sis in the field of transport theory. His special way of motivating persons, his critical reading of my work and the various discussions, which often exceeded his personal frame of time, proves to be invaluable for me. Thank you. During my doctoral studies I got the possibility to participate in the IHP-project "Hyperbolic and Kinetic Equations: Asymptotics, Numerics, Analysis (HYKE)" of the European Community. In the course of this project, I had the pleasure to enjoy the Italian hospitality of Prof. Majo- rana and his colleagues at the Dipartimento di Matematica e Informatica dell'Universit8 di Catania. My very exciting and interesting three months stay in Catania submontane the Etna greatly enriched both my mathemat- ical experience and the knowledge of the Italian culture. Thank you very much. Moreover, I would like to thank my family and my friends who supported me in a way only they can do. Finally, I acknowledge the financial support of my doctoral thesis by the Fond zur Forderung der wissenschaftlichen Forschung, Vienna, contract numbers P14669-TPH and P17438-N08, and by the European community program IHP, under the contract number HPRN-CT-2002-00282 on behalf of the CNR. M. Galler Contents Preface vii 1. Introduction 1 2 . The Bloch-Boltzmann-Peierls Equations 5 2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Electrons in Semiconductors . . . . . . . . . . . . . . . . . . 5 2.3 Phonons in Semiconductors . . . . . . . . . . . . . . . . . . 9 2.4 Scattering Mechanisms . . . . . . . . . . . . . . . . . . . . . 11 2.4.1 General Theory of Scattering . . . . . . . . . . . . . 12 2.4.2 Phonon Scattering . . . . . . . . . . . . . . . . . . . 14 2.4.2.1 Non-polar Phonon Scattering . . . . . . . . 15 2.4.2.2 Polar Phonon Scattering . . . . . . . . . . . 19 2.4.3 Ionized Impurity Scattering . . . . . . . . . . . . . . 22 2.5 Semiclassical Dynamics of Electrons . . . . . . . . . . . . . 24 2.6 The Bloch-Boltzmann-Peierls Equations . . . . . . . . . . . 26 2.7 Mathematical Properties of the BBP Equations . . . . . . . 32 3 . Multigroup Model Equations for Polar Semiconductors 37 3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 3.2 Multigroup Equations to the Bloch-Boltzmann-Peierls Equa- tions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.2.1 The Electron Boltzmann Equation . . . . . . . . . . 40 3.2.2 The LO Phonon Boltzmann Equation . . . . . . . . 45 3.2.3 The Coupling POP Interaction Term . . . . . . . . . 47 3.2.4 The Evaluation of the Collision Coefficients . . . . . 51 ix

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Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors a
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