Microwave Electronics

2018·14.9 MB·English

by  Grigoriev, Ivanov & Molokovsky

Springer Series in Advanced Microelectronics 61
Andrey D. Grigoriev
Vyacheslav A. Ivanov
Sergey I. Molokovsky
Microwave
Electronics
Edited by Professor A. D. Grigoriev
Springer Series in Advanced Microelectronics
Volume 61
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Andrey D. Grigoriev Vyacheslav A. Ivanov
•
Sergey I. Molokovsky
Microwave Electronics
Edited by Professor A. D. Grigoriev
123
Andrey D.Grigoriev Sergey I.Molokovsky(deceased)
Saint-Petersburg Electrotechnical Saint-Petersburg Electrotechnical
University “LETI” University “LETI”
Saint-Petersburg Saint-Petersburg
Russia Russia
Vyacheslav A.Ivanov
Saint-Petersburg Electrotechnical
University “LETI”
Saint-Petersburg
Russia
ISSN 1437-0387 ISSN 2197-6643 (electronic)
SpringerSeries inAdvancedMicroelectronics
ISBN978-3-319-68890-9 ISBN978-3-319-68891-6 (eBook)
https://doi.org/10.1007/978-3-319-68891-6
LibraryofCongressControlNumber:2017957671
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Nature is simple in its laws,
but immeasurably rich and diverse in their
applications!
G. W. Leibniz
Preface
Microwaveelectronicsiscurrentlyalargeandrapidlydevelopingbranchofscience
and technology, which has a huge impact on the country’s economy and defense
capability. Most telecommunication systems, radio astronomy, accelerative tech-
niques,thermonuclearmachines,technologyandmedicine,andpracticallyalltypes
of weapons use microwave electronics technology to some extent. These
achievements are mostly due to the use of new interaction mechanisms of charged
particle fluxes with electromagnetic fields, use of new materials, and new manu-
facturing technologies of microwave electronics devices and systems.
Thephysicallawsandphenomenausedinmicrowaveelectronicdevices,andthe
operating principles of these devices, along with their design, characteristics and
parametersformthesubjectofthe“MicrowaveElectronics”discipline.Theselaws,
phenomena and devices are studied more deeply in the masters programs of the
corresponding field.
Unfortunately, the textbooks and manuals on this discipline existing at the time
ofpreparationofthismanuscriptwereeitherpublishedalongtimeagoandareout
of date, or do not cover all the discipline’s content. In particular, there are no
modern manuals considering the processes taking place in a vacuum and in
semiconductor microwave devices from the unified position.
The proposed textbook describes in reasonable detail the main interaction
mechanisms of the microwave electromagnetic field with charged particles in a
vacuum and in a solid. Much attention is paid to the peculiarities of these mech-
anismsusingvacuumandsolid-statemicrowaveelectronicdevices.Thistheoretical
partissupplementedbyadescriptionofthedesignofthedevices,theirparameters
and characteristics.
The authors hope that the proposed textbook will assist students studying
microwave electronics and related areas.
The book will also be useful to postgraduates and specialists engaged in the
development and application of microwave electronics products.
The textbook is based on the lecture course taught by the authors to bachelors
and masters in St. Petersburg State Electrotechnical University “LETI”.
vii
viii Preface
TheauthorsexpressalsotheirgratitudetoV.B.Yancevichforvaluableadvices
andassistanceinpreparingthebookforpublication.Theauthorsarealsosincerely
grateful to V. B. Yankevich, the Head of the LETI Radio-technical Electronics
Department, for valuable advice and invaluable assistance in preparing the manu-
script for publication.
TheIntroduction,Chapters1,3,5...8,Chapter10andAppendixCwaswrittenby
A. D. Grigoriev, Chapter 12... 14 and Appendix A was written by V. A. Ivanov,
Chapters 2, 4 and 11 was written together by A. D. Grigoriev and V. A. Ivanov,
Chapter 9 and Appenix B was written together by A. D. Grigoriev and S. I.
Molokiovsky.
Saint-Petersburg, Russia Vyacheslav A. Ivanov
Contents
Part I Microwave Electronics Physical Foundations
1 Main Stages of Microwave Electronics Development . . . . . . . . . . . 3
1.1 Background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Microwave Vacuum Electronics. . . . . . . . . . . . . . . . . . . . . . . . 5
1.3 Semiconductor Microwave Electronics. . . . . . . . . . . . . . . . . . . 7
1.4 Comparative Characteristics of Vacuum and Semiconductor
Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.5 Prospects for the Development of Microwave Electronics . . . . . 9
2 Interaction of Charged Particles with an Alternating
Electromagnetic Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.1 Radiation of Individual and Collective Charged Particles . . . . . 11
2.2 Macroscopic Equations of Microwave Electronics. . . . . . . . . . . 16
2.3 Motion Equations of Charged Particles . . . . . . . . . . . . . . . . . . 18
2.3.1 Motion of a Single Particle in Vacuum . . . . . . . . . . . 18
2.3.2 The Particles Ensemble Motion in Vacuum . . . . . . . . 20
2.3.3 The Particles Ensemble Motion in Solid . . . . . . . . . . 22
2.4 Material Parameters and Relaxation Processes . . . . . . . . . . . . . 24
2.5 Noises in Microwave Devices . . . . . . . . . . . . . . . . . . . . . . . . . 32
Advancement Questions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3 Oscillations and Waves in Charged Particle Beams . . . . . . . . . . . . 43
3.1 Space Charge Oscillations. . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.2 Space Charge Waves in Electron Beams . . . . . . . . . . . . . . . . . 45
3.3 Charge Carrier Waves in Semiconductors. . . . . . . . . . . . . . . . . 49
Advancement Questions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
ix
x Contents
4 Interaction of Charged Particle Fluxes with a High-Frequency
Electromagnetic Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
4.1 Interaction Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
4.2 Interaction with Quasi-Static Field, the Induced Current.
The Shokley-Ramo Theorem. . . . . . . . . . . . . . . . . . . . . . . . . . 57
4.3 Current in the Flat Interelectrode Gap
and Its External Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
4.4 Electric Gap Field Effect on the Motion
of Charged Particles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
4.5 Energy Exchange Between Electrons and the Gap Field . . . . . . 66
4.6 Interaction of Charged Particles with a Travelling Wave
Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Advancement Questions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5 A Microwave Device as a Circuit Element . . . . . . . . . . . . . . . . . . . 73
5.1 Microwave Devices Requirements . . . . . . . . . . . . . . . . . . . . . . 73
5.2 Classification of Microwave Devices . . . . . . . . . . . . . . . . . . . . 74
5.3 The Basic Functional Components of Electron Devices. . . . . . . 76
5.4 Parameters and Characteristics of Microwave Devices. . . . . . . . 78
5.4.1 Device Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . 78
5.4.2 Characteristics of Microwave Devices . . . . . . . . . . . . 79
Advancement Questions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Part II Microwave Vacuum Electron Devices
6 Devices with Quasi-static Control . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.1 General Characteristics and Parameters of Devices
with Quasi-static Control. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.2 The Monotron and Diode Admittance . . . . . . . . . . . . . . . . . . . 90
6.3 Operating Modes of Electron Tubes. . . . . . . . . . . . . . . . . . . . . 92
6.4 Amplifier Circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
6.5 The Influence of Cathode Contact Inductance. . . . . . . . . . . . . . 96
6.6 The Influence of Space Charge and Displacement
Current in the Cathode-Grid Space . . . . . . . . . . . . . . . . . . . . . 98
6.7 Motion of Electrons in the Grid-Anode Space . . . . . . . . . . . . . 100
6.8 Modern Medium and High Power Tetrodes . . . . . . . . . . . . . . . 101
6.9 Microwave Vacuum Microelectronics Devices . . . . . . . . . . . . . 104
Advancement Questions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
7 O-Type Microwave Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
7.1 General Characteristics of O-Type Devices. . . . . . . . . . . . . . . . 109
7.2 Klystrons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
7.2.1 The Structure and Operating Principle
of the Double-Cavity Transit-Time Klystron . . . . . . . 110
7.2.2 Velocity Modulation in the Interaction Gap . . . . . . . . 111
7.2.3 The Kinematic Theory of Bunching. . . . . . . . . . . . . . 113
7.2.4 Effect of Longitudinal Electron Repulsion . . . . . . . . . 118