Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit-From Mega-Bit to Giga-Bit

311 Pages·1998·51.415 MB·\311

by  Hiroyuki Tango (Editor)

Japanese Technology Reviews
Editor in Chief
Toshiaki Ikoma, University of Tokyo/Texas Instruments Japan, Ltd.
Section Editors
Section A: Electronics Toshiaki Ikoma, University of Tokyo/Texas Instruments Japan, Ltd.
Section B: Computers
and Communications TadaO SaitO, University of Tokyo
KazumotO Iinuma, NEC Corporation, Kawasaki
Section C. New Materials Hiroaki Yanagida, University of Tokyo
NoborU lchinosé, Waseda University, Tokyo
Section D: Manufacturing
Engineering Fumio Harashima, University of Tokyo
Section E: Biotechnology Isao Karube, University of Tokyo
Reiko Kuroda, University of Tokyo
Section A: Electronics
Volume 2
MMIC-Monolithic Microwave Integrated Circuits
Yasuo Mitsui
Volume 4
Bulk Crystal Growth Technology
Shin-ichi Akai, Keiichiro Fujita, Masamichi Yokogawa, Mikio Morioko and
Kazuhisa Matsumoto
Volume 8
Semiconductor Heterostructure Devices
Masayuki Abe and Naoki Yokoyama
Volume 11
Development of Optical Fibers in Japan
Hiroshi Murata
Volume 12
High-Performance BiCMOS Technology and Its Applications
toVLSIs
Ikuro Masuda and Hideo Maejima
Volume 13
Semiconductor Devices for Electronic Tuners
Seiichi Watanabe
Volume 19
Amorphous Silicon Solar Cells
Yukinori Kuwano
Volume 20
High Density Magnetic Recording for Home VTR: Heads and Media
Kazunori Ozawa
Please see the back of this book for other titles in the Japanese
Technology Reviews series
MEGA-BIT MEMORY
TECHNOLOGY
From Mega-Bit to Giga-Bit
Japanese Technology Reviews
Editor in Chief
Toshiaki Ikoma, University of Tokyo/ Texas Instruments Japan, Ltd.
Section Editors
Section A: Electronics
Toshiaki Ikoma, University of Tokyo I Texas Instruments Japan, Ltd.
Section B: Computers and Communications
Tadao SaitO, University of Tokyo
KazumotO Iinuma, NEC Corporation, Kawasaki
Section C: New Materials
Hiroaki Yanagida, University of Tokyo
Noboru Ichinosé, Waseda University, Tokyo
Section D: Manufacturing Engineering
Fumio Harashima, University of Tokyo
Section E: Biotechnology
Isao Karube, University of Tokyo
Reiko Kuroda, University of Tokyo
GENERAL INFORMATION
Aims and Scope
Japanese Technology Reviews is a series of tracts which examines the status and futuer
prospects for Japanese technology.
MEGA-BIT MEMORY
TECHNOLOGY
From Mega-Bit to Gig a-Bit
Hiroyuki Tango
Tokyo Institute of Polytechnics
Kanagawa, Japan
Boca Raton London New York
CRC Press is an imprint of the
Taylor & Francis Group, an informa business
CRC Press
Taylor & Fmncis Group
6000 Broken Sound Parkway NW, Suite 300
Boca Raton, FL 33487-2742
First issued in hardback 2019
IÖ 1998 by Taylor & Francis Group, LLC
CRC Press is an imprint ofTaylor & Francis Group, an Informa business
No claim to original U.S. Government works
ISBN-13: 978-90-5699-098-5 (pbk)
ISBN-13: 978-1-138-41395-5 (hbk)
This book contains information obtained from authentie and highly regarded sourees.
Reasonable efforts have been made to publish reliable data and information, but the
author and publisher cannot assume responsibility for the validity of all materials or
the consequences of their use. The authors and publishers have attempted to trace the
copyright holders of a11 material reproduced in this publication and apologize to
copyright holders if permission to publish in this form has not been obtained. If any
copyright material has not been acknowledged please write and let us know so we may
rectify in any future reprint.
Except as permitted under U.S. Copyright Law, no part ofthis book may be reprinted,
reproduced, transmitted, or utilized in any form by any electronic, mechanical, or
other means, now known or hereafter invented, inc1uding photocopying,
microfilming, and recording, or in any information storage or retrieval system,
without written permission from the publishers.
For permission to photocopy or use material electronica11y from this work, please
access www.copyright.com (http://www.copyright.com/) or contact the Copyright
Clearance Center, Inc. (CCC), 222 Rosewood Drive, Danvers, MA 01923,
978-750-8400. CCC is a not-for-profit organization that provides licenses and
registration for a variety of users. For organizations that have been granted a
photocopy license by the CCC, a separate system of payment has been arranged.
Trademark Notice: Product or corporate names may be trademarks or registered
trademarks, and are used only for identification and explanation without intent to
infringe.
British Lihrary Cataloguing in Publication Data
Mega-bit memory technology: from mega-bit to giga-bit.
(Japanese technology reviews; v.32)
I. Random access memory 2. Integrated circuits -Ultra large
scale integration
I. Tango, Hiroyuki
621.3'973
Visit the Taylor & Francis Web site at
http://www.taylorandfrancis.com
and the CRC Press Web site at
http://www.crcpress.com
Contents
Preface to the Series ix
Preface xi
Contributors xiii
1. MOS Device Technology
Hiroyuki Tango /
1.1. Introduction 1
1.2. MOS device technology 3
1.3. Scaling law for lower sub-micron MOS devices 6
1.4. Toward Gbit and beyond 8
1.5. Si quantum devices 10
2. Memory Cell Technology
Hiroyuki Tango IS
2.1. Memory cell technology trend 15
2.2. Trench capacitor cells 18
2.3. Stacked capacitor cell 26
2.4. High e and ferroelectric films for the
gigabit generation 32
3. Lithography
Masataka Miyamura 39
3.1. Introduction 39
3.2. Photolithography 39
3.3. Resist and resist process 52
3.4. EB lithography 77
3.5. X-ray lithography 85
v
vi Contents
4. Dry Etching
M akoto Sekine 98
4.1. Introduction 98
4.2. Basic etching hardware and
process technologies 98
4.3. Emerging etching process technologies 111
5. Thin Film Insulator
Kikuo Yamabe 125
5.7. Introduction 125
5.2. Oxide breakdown defect 125
5.3. Trench corner oxidation 129
5.4. Fatigue breakdown 138
5.5. Polysilicon oxide 142
5.6. Trapping center 144
5.7. Stress induced leakage current 146
5.8. Summary 148
6. Impurity Doping
Kikuo Yamabe 149
6.1. Introduction 149
6.2. Impurity doping 149
6.3. Macroscopic diffusion mechanism 152
6.4. Microscopic diffusion mechanism 155
6.5. Point defect control technology 156
6.6. Summary 173
7. Metallization
Kyoichi Suguro 177
7.1. Gate electrodes 178
7.2. Source and drain contacts 180
7.3. Interconnects 185
7.4. Summary 191
Contents vu
8. Chemical Vapor Deposition (CVD)
Nobuo Hayasaka 196
8.1. Introduction 196
8.2. CVD of poly crystalline silicon 196
8.3. CVD of metals 197
8.4. CVD of insulators 204
9. Crystal Technology
Yoshiaki Matsusita 219
9.1. Introduction 219
9.2. Silicon crystal growth technology 219
9.3. Crystalline defect control 228
9.4. Epitaxial wafer 240
9.5. SOI technology 245
9.6. Hereafter subject of crystal technology 247
10. Process and Device Simulation
Tetsunori Wada 251
10.1. Introduction 251
10.2. Process simulation 252
10.3. Device simulation 263
10.4. Conclusion 269
11. SOI Technology
Makoto Yoshimi 271
11.1. History of SOI technology 271
11.2. Thin-film SOI structure 272
11.3. SOI substrate technology 275
11.4. Application to ULSI circuits 279
11.5. Summary 285
Index 288