MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with Internal Reference in TDFN

28 Pages·2016·0.91 MB·English

EVALUATION KIT AVAILABLE
MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
General Description Benefits and Features
The MAX11165 16-bit, 250ksps, SAR ADC offers ● High DC/AC Accuracy Improves Measurement
excellent AC and DC performance with unipolar input Quality
range, small size, and internal reference. The MAX11165
• 16-Bit Resolution with No Missing Codes
integrates an optional internal reference and buffer,
• 250ksps Throughput Rates Without Pipeline Delay/
saving additional cost and space.
Latency
This ADC achieves 92.4dB SNR and -104.2dB THD. • 92.4dB SNR and -104.2dB THD at 10kHz
The MAX11165 guarantees 16-bit no-missing codes and • 0.5 LSBRMS Input-Referred Noise
±0.6 LSB INL (typ). • ±0.2 LSB DNL (typ) and ±0.6 LSB INL (typ)
● Highly Integrated ADC Saves Cost and Space
The MAX11165 communicates using an SPI-compatible
serial interface at 2.3V, 3V, 3.3V, or 5V logic. The serial • ±6ppm/°C Internal Reference
interface can be used to daisy-chain multiple ADCs for • Internal Reference Buffer
multichannel applications and provides a busy indicator ● Wide Supply Range and Low Power Simplify Power-
option for simplified system synchronization and timing. Supply Design
The MAX11165 is offered in a 12-pin, 3mm x 3mm, TDFN • 5V Analog Supply
package and is specified over the -40NC to +85NC • 2.3V to 5V Digital Supply
temperature range. • 19mW Power Consumption at 250ksps
• 10μA in Shutdown Mode
Applications ● Multi-Industry Standard Serial Interface and Small
● Data Acquisition Systems Package Reduce Size
● Industrial Control Systems/Process Control • SPI/QSPI™/MICROWIRE®/DSP-Compatible Serial
Interface
● Medical Instrumentation
• 3mm x 3mm Tiny 12-Pin TDFN Package
● Automatic Test Equipment
QSPI is a trademark of Motorola, Inc.
MICROWIRE is a registered trademark of National
Selector Guide and Ordering Information appear at end of
Semiconductor Corporation.
data sheet.
Typical Operating Circuit 14-Bit to 18-Bit SAR ADC Family
14-BIT 16-BIT 16-BIT 18-BIT
500ksps 250ksps 500ksps 500ksps

±5V Input
1µF V(5DVD) 1µF O(2V.3DVD TO 5V) Internal — MAX11167 MAX11166 MAX11156
MAX11169 MAX11168 MAX11158
10Ω AIN+ INTERFACE DSCINLK Reference
0 to +5V MAX9632 C4eC.r70anGmFic AIN- 16-BIT ADC CAONNRDFE ICGGOUISNRTTAERTRIOOLN CDNOVUSTT CONHTORSOTLLER 0In ttoe r5nVa lI nput — MMAAXX1111116615 MMAAXX1111116604 MMAAXX1111115504
REF MAX11165 Reference
INTERNAL
REF REFERENCE
BUF
10µF REFIO 0 to 5V Input
AGNDS GND 0.1µF External MAX11262 MAX11163 MAX11162 MAX11152
Reference
19-6724; Rev 3; 11/15
MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Absolute Maximum Ratings
VDD to GND ............................................................-0.3V to +6V Continuous Power Dissipation (TA = +70NC)
OVDD to GND .......-0.3V to the lower of (VDD + 0.3V) and +6V TDFN (derate 18.2mW/NC above +70NC) ..................1349mW
AIN+ to GND ...........................................................-0.3V to +6V Operating Temperature Range ...........................-40NC to +85NC
AIN-, REF, REFIO, AGNDS Junction Temperature ......................................................+150NC
to GND ...............-0.3V to the lower of (VDD + 0.3V) and +6V Storage Temperature Range ............................-65NC to +150NC
SCLK, DIN, DOUT, CNVST Lead Temperature (soldering, 10s) .................................+300NC
to GND ...............-0.3V to the lower of (VDD + 0.3V) and +6V Soldering Temperature (reflow) .......................................+260NC
Maximum Current into Any Pin...........................................50mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Package Thermal Characteristics (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance (qJA).......59.3NC/W
Junction-to-Case Thermal Resistance (qJC) ...........22.5NC/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(VDD = 4.75V to 5.25V, VOVDD = 2.3V to 5.25V, fSAMPLE = 250ksps, Reference Mode 3, VREF = 4.096V; TA = TMIN to TMAX, unless
otherwise noted. Typical values are at TA = +25NC.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
ANALOG INPUT (Note 3)
5.000
+K x
Input Voltage Range AIN+ to AIN-, K = 0 V
4.096 VREF
AIN+ to GND -0.1 +(VDD
Absolute Input Voltage Range + 0.1) V
AIN- to GND -0.1 +0.1
Input Leakage Current Acquisition phase -10 +0.001 +10 µA
Input Capacitance 32 pF
Input-Clamp Protection Current Both inputs -20 +20 mA
STATIC PERFORMANCE (Note 4)
Resolution N 16 Bits
No Missing Codes 16 Bits
Offset Error -4.0 ±1.0 +4.0 LSB
Offset Error Temperature
±0.006 LSB/°C
Coefficient
Gain Error -3 ±1.2 +3.0 LSB
Gain Error Temperature
±0.004 LSB/°C
Coefficient
Integral Nonlinearity INL -1.4 ±0.6 +1.4 LSB
Differential Nonlinearity DNL Guaranteed by design -0.5 ±0.2 +0.5 LSB
Positive Full-Scale Error -5.5 +5.5 LSB
Analog Input CMRR CMRR -1.96 LSB/V
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Electrical Characteristics (continued)
(VDD = 4.75V to 5.25V, VOVDD = 2.3V to 5.25V, fSAMPLE = 250ksps, Reference Mode 3, VREF = 4.096V; TA = TMIN to TMAX, unless
otherwise noted. Typical values are at TA = +25NC.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Power-Supply Rejection (Note 5) PSR -5.7 LSB/V
Transition Noise 0.5 LSBRMS
REFERENCE (Note 7)
REF Output Initial Accuracy VREF Reference mode 0 4.092 4.096 4.100 V
REF Output Temperature
Coefficient TCREF Reference mode 0 -17 ±7 +17 ppm/°C
REFIO Output Initial Accuracy VREFIO Reference modes 0 and 2 4.092 4.096 4.100 V
REFIO Output Temperature
Coefficient TCREFIO Reference modes 0 and 2 -15 ±6 +15 ppm/°C
REFIO Output Impedance Reference modes 0 and 2 10 kΩ
REFIO Input Voltage Range Reference mode 1 3 4.096 4.25 V
Reference Buffer Initial Offset Reference modes 0 and 1 -500 +500 µV
Reference Buffer Offset Drift Reference modes 0 and 1 -10 ±4 +10 µV/°C
External Compensation Required for reference modes 0 and 1,
Capacitor CEXT recommended for reference modes 2 and 3 10 µF
REF Voltage Input Range VREF Reference modes 2 and 3 2.5 4.25 V
REF Input Capacitance Reference modes 2 and 3 20 pF
REF Load Current IREF VREF = 4.096V, reference modes 2 and 3 68.6 µA
DYNAMIC PERFORMANCE (Note 6)
VREF = 4.096V, reference mode 3 91.3 92.4
VREF = 4.096V, reference mode 1 92.3
Signal-to-Noise Ratio SNR dB
VREF = 2.5V, reference mode 3 89.1
Internal reference, reference mode 0 92.3
VREF = 4.096V, reference mode 3 91 92.2
VREF = 4.096V, reference mode 1 92.1
Signal-to-Noise Plus Distortion SINAD dB
VREF = 2.5V, reference mode 3 88.8
Internal reference, reference mode 0 91.4
Spurious-Free Dynamic Range SFDR 99 107 dB
Total Harmonic Distortion THD -104.2 -97 dB
Intermodulation Distortion (Note 8) IMD -119.4 dB
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Electrical Characteristics (continued)
(VDD = 4.75V to 5.25V, VOVDD = 2.3V to 5.25V, fSAMPLE = 250ksps, Reference Mode 3, VREF = 4.096V; TA = TMIN to TMAX, unless
otherwise noted. Typical values are at TA = +25NC.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
SAMPLING DYNAMICS
Throughput Sample Rate 250 ksps
Transient Response Full-scale step 400 ns
-3dB point 6
Full-Power Bandwidth MHz
-0.1dB point > 0.2
Aperture Delay 2.5 ns
Aperture Jitter < 50 psRMS
POWER SUPPLIES
Analog Supply Voltage VDD 4.75 5.25 V
Interface Supply Voltage VOVDD 2.3 5.25 V
Reference modes 0 and 1 4.5 5.5 6.0
Analog Supply Current IVDD mA
Reference modes 2 and 3 2.5 3.5
VDD Shutdown Current 0.01 10 µA
VOVDD = 2.3V 0.8 1.0
Interface Supply Current IOVDD mA
VOVDD = 5.25V 2.1 3.0
OVDD Shutdown Current 0.08 10 µA
VDD = 5V, VOVDD = 3.3V, reference mode 19
= 2, 3
Power Dissipation mW
VDD = 5V, VOVDD = 3.3V, reference mode 31
= 0, 1
DIGITAL INPUTS (DIN, SCLK, CNVST)
0.7 x
Input Voltage High VIH VOVDD V
Input Voltage Low VIL 0.3 x VOVDD V
Input Hysteresis VHYS ±0.05 x VOVDD V
Input Capacitance CIN 10 pF
Input Current IIN VIN = 0V or VOVDD -10 +10 µA
DIGITAL OUTPUT (DOUT)
Output Voltage High VOH ISOURCE = 2mA V-O 0V.D4D V
Output Voltage Low VOL ISINK = 2mA 0.4 V
Three-State Leakage Current -10 +10 µA
Three-State Output Capacitance 15 pF
TIMING (Note 9)
Time Between Conversions tCYC 4 µs
Conversion Time tCONV CNVST rising to data available 2.7 3.0 µs
Acquisition Time tACQ tACQ = tCYC - tCONV 1 µs
CNVST Pulse Width tCNVPW CS mode 5 ns
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Electrical Characteristics (continued)
(VDD = 4.75V to 5.25V, VOVDD = 2.3V to 5.25V, fSAMPLE = 250ksps, Reference Mode 3, VREF = 4.096V; TA = TMIN to TMAX, unless
otherwise noted. Typical values are at TA = +25NC.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
VOVDD > 4.5V 14
SCLK Period (CS Mode) tSCLK VOVDD > 2.7V 20 ns
VOVDD > 2.3V 26
VOVDD > 4.5V 16
SCLK Period (Daisy-Chain
Mode) tSCLK VOVDD > 2.7V 24 ns
VOVDD > 2.3V 30
SCLK Low Time tSCLKL 5 ns
SCLK High Time tSCLKH 5 ns
VOVDD > 4.5V 12
SCLK Falling Edge to Data Valid
Delay tDDO VOVDD > 2.7V 18 ns
VOVDD > 2.3V 23
CNVST Low to DOUT D15 MSB VOVDD > 2.7V 14
Valid (CS Mode) tEN VOVDD < 2.7V 17 ns
CNVST High or Last SCLK
Falling Edge to DOUT High tDIS CS Mode 20 ns
Impedance
VOVDD > 4.5V 3
DIN Valid Setup Time from SCLK
Falling Edge tSDINSCK VOVDD > 2.7V 5 ns
VOVDD > 2.3V 6
DIN Valid Hold Time from SCLK
Falling Edge tHDINSCK 0 ns
SCLK Valid Setup Time to
CNVST Falling Edge tSSCKCNF 3 ns
SCLK Valid Hold Time to CNVST
Falling Edge tHSCKCNF 6 ns
Note 2: Maximum and minimum limits are fully production tested over specified supply voltage range and at a temperature of
+25°C. Limits over the operating temperature range are guaranteed by design and device characterization.
Note 3: See the Analog Inputs and Overvoltage Input Clamps sections.
Note 4: Static Performance limits are guaranteed by design and device characterization. For definitions, see the Definitions section.
Note 5: Defined as the change in positive full-scale code transition caused by a Q5% variation in the VDD supply voltage.
Note 6: 10kHz sine wave input, -0.1dB below full scale.
Note 7: See Table 4 for definition of the reference modes.
Note 8: fIN1 ~ 9.4kHz, fIN2 ~ 10.7kHz, Each tone at -6.1dB below full scale.
Note 9: CLOAD = 65pF on DOUT.
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Typical Operating Characteristics
(VDD = 5V, VOVDD = 3.3V, fSAMPLE = 250ksps, VREF = 4.096V; Reference Mode 3, TA = +25°C, unless otherwise noted.)
OFFSET AND GAIN ERROR OFFSET AND GAIN ERROR
vs. TEMPERATURE vs. V SUPPLY VOLTAGE
DD
2.0 toc01 4 toc02
OFFSET AVERAGE OF 128
ERROR DEVICES OFFSET
1.5 3 ERROR
1.0 2
ERROR (LSB)-000...055 ERROR (LSB)-101
-1.0 -2
-1.5 -3
AVERAGE OF 128
DEVICES
-2.0 -4
-40 -15 10 35 60 85 4.75 4.85 4.95 5.05 5.15 5.25
TEMPERATURE (°C) VDD(V)
DIFFERENTIAL NONLINEARITY vs. CODE INTEGRAL NONLINEARITY vs. CODE
0.5 toc03 2.0 toc04
SINGLEDEVICE SINGLE
0.4 1.5 DEVICE
0.3
1.0
0.2
0.5
0.1
B) B)
DNL (LS-00..01 INL (LS-00..05
-0.2
-1.0
-0.3
-1.5
-0.4
-0.5 -2.0
0 8192 16384 24576 32768 40960 49152 57344 65536 0 8192 16384 24576 32768 40960 49152 57344 65536
OUTPUT CODE (DECIMAL) OUTPUT CODE (DECIMAL)
DNL vs. TEMPERATURE INL vs. TEMPERATURE
0.8 toc05 2.0 toc06
MAX DNL AVERAGE OF 128 MAX INL AVERAGE OF 128
0.6 MIN DNL DEVICES 1.5 MIN INL DEVICES
0.4 1.0
0.2 0.5
DNL (LSB)0.0 INL (LSB)0.0
-0.2 -0.5
-0.4 -1.0
-0.6 -1.5
-0.8 -2.0
-40 -15 10 35 60 85 -40 -15 10 35 60 85
TEMPERATURE (°C) TEMPERATURE (°C)
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Typical Operating Characteristics (continued)
(VDD = 5V, VOVDD = 3.3V, fSAMPLE = 250ksps, VREF = 4.096V; Reference Mode 3, TA = +25°C, unless otherwise noted.)
DNL vs. VDDSUPPLY VOLTAGE INL vs. VDDSUPPLY VOLTAGE
0.8 toc07 2.0 toc08
MAX DNL
AVERAGE OF 128 MAX INL AVERAGE OF 128
0.6 MIN DNL 1.5 MIN INL DEVICES
0.4 1.0
0.2 0.5
DNL (LSB)-00..02 INL (LSB)-00..05
-0.4 -1.0
-0.6 -1.5
-0.8 -2.0
4.75 4.85 4.95 5.05 5.15 5.25 4.75 4.85 4.95 5.05 5.15 5.25
VDD(V) VDD(V)
OUTPUT NOISE HISTOGRAM OUTPUT NOISE HISTOGRAM WITH
NO AVERAGE 4 SAMPLE AVERAGE
toc09 toc10
24000 SINGLE DEVICE 28000 SINGLE DEVICE
STDEV = 0.47LSBRMS STDEV = 0.23LSBRMS
NUMBER OF OCCURRENCES 1128260000000000000 NUMBER OF OCCURRENCES 112282604000000000000000
4000 4000
0 0
32793 32794 32795 32796 32797 32798 32799 32800 32801 32802 32803 32804 32805 32794 32795 32796 32797 32798 32799 32800 32801 32802 32803 32804 32805
OUTPUT CODE (DECIMAL) OUTPUT CODE (DECIMAL)
INTERNAL REFERENCE VOLTAGE (REF PIN) INITIAL ERROR VOLTAGE ON REF PIN
vs. TEMPERATURE
toc011 60 toc12
4.104 15 1 303 DEVICES
2 MEAN= 4096.0mV
3 50 STDEV = 1.2mV
4.102 4 STDEV = 282ppm
5 ES
4.100 6 NC40
7 RE
V(V)REF44..009968 89101 OF OCCUR30
44..009924 112131415 NUMBER 1200
4.090 0
-40 -15 1T0EMPERATU3R5E (°C) 60 85 4.0930 4.0935 4.0940 4.0945 4.0950 4.0955 4.0960 4.0965 4.0970 4.0975 4.0980 4.0985 4.0990
REF PIN VOLTAGE (V)
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Typical Operating Characteristics (continued)
(VDD = 5V, VOVDD = 3.3V, fSAMPLE = 250ksps, VREF = 4.096V; Reference Mode 3, TA = +25°C, unless otherwise noted.)
INTERNAL REFERENCE VOLTAGES
REF PIN THERMAL DRIFT SLOPE
vs. V VOLTAGE
70 toc13 4.0965 DD
303 DEVICES 25°C to -40°C 303 DEVICES REF AVERAGE OF 200 DEVICES
60 MSTEDAENV= = - 72..31ppppmm//°°CC 25°C to +85°C SMTDEAENV == 11..99ppppmm//°°CC 4.0964 REFIO
S 4.0963
NCE50 4.0962
E
R
R OF OCCUR3400 V(V)REF 444...000999566901
E
MB20 4.0958
U
N
4.0957
10
4.0956
0
4.0955
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
4.75 4.85 4.95 5.05 5.15 5.25
THERMAL DRIFT (ppm/°C)
VDD(V)
FFT PLOT TWO TONES IMD
toc15 0 toc16
-200 fRSNVINNIESNA=FR=M 1M P- 0=0LO1E. 1 D09=d1E2 B 4. H5F=0zd9 S3B6 --4200 fSNfVVIINNIIISNNN12A12G==M== LP91 EL--3066E 66..D11=85Edd .119BBVH6HFFIz3CzSS8E4
-40 SINAD = 92.2dB IMD = -119.7dBFS
MAGNITUDE (dB) --8600 STHFDDR = =-1 10048.9.4ddBB MAGNITUDE (dB)-1--860000
-100
-120
-120
-140
-140 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0
0 20 40 60 80 100 120
FREQUENCY (kHz)
FREQUENCY (kHz)
SINAD AND ENOB vs. FREQUENCY SFDR AND -THD vs. FREQUENCY
98 toc1716.0 125 toc18
SEINNOABD AVVINE=R -A0G.1Ed BOFFS 128 DEVICES 120 STHFDDR
96
115
15.5
94 B)110
SINAD (dB) 9902 15.0 ENOB (bits) FDR AND -THD (d11900055
S
14.5
90
88
85 AVVINE=R -A0G.1Ed BOFFS 128 DEVICES
86 14.0 80
0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0
FREQUENCY (kHz) FREQUENCY (kHz)
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Typical Operating Characteristics (continued)
(VDD = 5V, VOVDD = 3.3V, fSAMPLE = 250ksps, VREF = 4.096V; Reference Mode 3, TA = +25°C, unless otherwise noted.)
SNR AND SINAD vs. TEMPERATURE SFDR AND THD vs. TEMPERATURE
98 toc19 120 toc20
SNR THD
96 SINAD 115 SFDR
110
B) 94
SNR AND SINAD (d 9902 SFDR AND -THD (dB)11900055
88 AfVINVINE== R1 -A00kG.1HEdz BOFFS 128 DEVICES 90 AfVINVIN=E= R1 -0A0kG.H1Edz BOFFS 128 DEVICES
86 85
-40 -15 10 35 60 85 -40 -15 10 35 60 85
TEMPERATURE (°C) TEMPERATURE (°C)
SNR AND SINAD vs. VDDSUPPLY VOLTAGE THD AND SFDR vs. VDDSUPPLY VOLTAGE
98 toc21 120 toc22
SNR THD
96 SINAD 115 SFDR
SNR AND SINAD (dB) 999024 SFDR AND -THD (dB) 111001050
95
88 AfVINVINE== R1 -A00kG.1HEdz BOFFS 128 DEVICES 90 VfININ == 1 -00k.H1dzBFS
AVERAGE OF 128 DEVICES
86 85
4.75 4.85 4.95 5.05 5.15 5.25 4.75 4.85 4.95 5.05 5.15 5.25
VDD(V) VDD(V)
CMR vs. INPUT FREQUENCY PSR vs. VDDSUPPLY FREQUENCY
-30 toc23 -30 toc24
VSAINING+L=E V DAEINV-I=C ±E100mV VVVODVDDD= =5 .30. 3±V250mV
-40 -40 SINGLE DEVICE
-50 -50
CMR (dB)-60 PSR (dB)-60
-70 -70
-80 -80
-90 -90
0.1 1.0 10.0 100.0 1000.0 0.1 1.0 10.0 100.0 1000.0
FREQUENCY (kHz) FREQUENCY (kHz)
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MAX11165 16-Bit, 250ksps, 0 to 5V SAR ADC with
Internal Reference in TDFN
Typical Operating Characteristics (continued)
(VDD = 5V, VOVDD = 3.3V, fSAMPLE = 250ksps, VREF = 4.096V; Reference Mode 3, TA = +25°C, unless otherwise noted.)
V SUPPLY CURRENT vs. TEMPERATURE OVDD SUPPLY CURRENT vs. TEMPERATURE
DD
8 toc25 5 toc26
RREEFF MMOODDEE 02 && 13 AVERAGE OF 128 DEVICES 21050kskpssps AVERAGE OF C12D8O UDTE=V I6C5EpSF
7
4
6
mA) mA) 3
I(VDD 5 I(OVDD 2
4
1
3
2 0
-40 -15 10 35 60 85 -40 -15 10 35 60 85
TEMPERATURE (°C) TEMPERATURE (°C)
V SUPPLY CURRENT vs. V SUPPLY VOLTAGE OVDD SUPPLY CURRENT vs. OVDD SUPPLY VOLTAGE
DD DD
8 toc27 3.0 toc28
7 RREEFF MMOODDEE 02 && 13 AVERAGE OF 128 DEVICES 2.5 21050kskpssps CAVDOEURTA=G 6E5 OpFF 128 DEVICES
6 2.0
I(mA)VDD 5 I(mA)OVDD 1.5
4 1.0
3 0.5
2 0.0
4.75 4.85 4.95 5.05 5.15 5.25 2.25 2.75 3.25 3.75 4.25 4.75 5.25
VDD(V) VOVDD(V)
VDDAND OVDD SHUTDOWN CURRENT VDDAND OVDD SHUTDOWN CURRENT
vs. TEMPERATURE vs. SUPPLY VOLTAGE
0.5 toc29 2.0 toc30
AVERAGE OF 128 DEVICES IVDD IVDD AVERAGE OF 128 DEVICES
IOVDD IOVDD
0.4
SHUTDOWN CURRENT (µA) 00..23 SHUTDOWN CURRENT (µA) 011...505
0.1
0.0 0.0
-40 -15 10 35 60 85 2.25 2.75 3.25 3.75 4.25 4.75 5.25
TEMPERATURE (°C) VDDor VOVDD(V)
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