Materials Science & Engineering B, Solid-State Materials for Advanced Technology 1995: Vol B35 Index

12 Pages·1995·4.1 MB·English

MATERIALS
SCIENCE &
ENGINEERING
B
Materials Science and Engineering B35 (1995) 497—499
Author Index of Volume 35
Alves, E.S. 149 Diaz, I.F.L. 396 Hiibner, B. 273
Andreev, A. 429 Diaz, J. 34 Hutchinson, S.V. 376
Aoyagi, Y. 364, 467 Dietz, N. 472 Hwang, S.-M. 214
Arifin, P. 330 Downes, J.R. 357
Aubrey, J.E. 263 Du, Q. 382 Ikeda, Y. 421
Aulombard, R. 184 IVin, V.1. 120
Eaves, L. 192 Inoue, K. 295
Bachmann, K.J. 472 Egan, R.J. 176 Ishibashi, K. 364
Baeta Moreira, M.V. 149, 391 Eliashevich, I. 34
Baklanov, M.R. 322 Elliott, M. 145, 353 Jackson, M.D. 489
Bakueva, L.G. 120 Enderlein, R. 250, 267, 396, 401 Janning, H. 59
Basmaji, P. 180, 318, 322 Erdtmann, M. 34 Jin, C.S. 72
Bass, J.M. 489 Evans, R.J. 203 Johnson, M.B. 485
Beliaev, D. 250, 267 Ezumi, H. 117 Jorio, A. 160
Beton, P.H. 192 Juang, C. 56
Billen, K. 376 Faux, D.A. 357
Juergensen, H. 102
Bimberg, D. 295 Fedorovich, A.E. 47
Bird, J.P. 364 Ferry, D.K. 364
Kang, J.-M. 214
Bi, W.G. 166 Fontius, U. 245
Karam, J.M. 219
Blanter, Y. 429 Forchel, A. 208, 273
Karunasiri, G. 463
Briot, O. 184 Foster, T.J. 192
Keitoku, S. 117
Brugger, H. 208 Fromhold, T.M. 239
Kelly, M.J. 1, 376
Bryant, A.L. 353
Ke, M. 145
Buot, F.A. 303, 51 Galzerani, J.C. 180
Ke, M.-l. 349
Burke, T.M. 203 Gavartin, J.L. 459
Kestle, A. 145
Burroughes, J.H. 198, 203 Gil, B. 184
Kharas, D. 299
Button, C.C. 12 Gobel, R. 59
Kim, K. 24, 64
Goldys, E.M. 330
Kim, M.-S. 214
Carlone, C. 160 Golovin, V.G. 76
Kim, S. 34
Carvalho, A.T.G. 149 Gongalves, J.L. 401
Kim, S.-I. 214
Ceschin, A.M. 401 Gorbach, T.Y. 224
Kim, Y. 214
Chen, M.S. 29 Goto, T. 410
Kobayashi, T. 117
Chen, S. 133 Grey, R. 42
Kochnev, I.V. 47
Chen, Y.H. 12 Grimshaw, M.P. 198, 203
Koenraad, P.M. 485
Chi, G.-C. 56 Grundmann, M. 295
Komin, V.V. 47
Chin, V.W.L. 176 Guimaraes, F.E.G. 318
Komuro, S. 467
Chitta, V.A. 318 Gurary, A.I. 97
Kroll, W.J. 97
Choi, J.S. 440 Gurevich, S.A. 47
Kumar, K. 17
Choi, Y.W. 24, 64 Gusev, G.M. 322
Kuramochi, E. 7
Christen, J. 295
Kuramoto, K. 479
Chua, S.J. 17, 463 Hackbarth, Th. 208
Kwon, O.K. 24, 64
Chua, S.-J. 87 Han, Z.Y. 449
Chu, H.Y. 446 Hayden, R.K. 80
Chung, M.S. 440 Henini, M. 192, 376 Laiho, R. 372
Clark, A. 176 Hill, G. 376 Laureto, E. 401
Courtois, B. 219 Hiramatsu, M. 68 Leadbeater, M.L. 198
Cui, H.L. 256 Hogg, R.A. 42 Lee, E.H. 446
Hopkinson, M. 12 Lee, E.-H. 24, 325, 64
da Silva, S.W. 180 Horing, N.J.M. 256 Lee, H.G. 325
de Oliveira, A.G. 149, 391 Houdayer, A. 160 Lee, H.J. 230, 234
David, J.P.R. 12, 42 Houng, M.P. 435 Lee, J.I. 325
Deschler, M. 102 Huang, H.K. 295 Lee, K.-S. 325, 440
Dewdney, A.J. 345 Huang, K.C. 259 Leite, J.R. 250, 267, 396, 40!
Elsevier Science S.A.
498 Author Index of Volume 35
Lei, X.L. 256 Peressi, M. 386 Svechnikov, S.V. 76
Leong, Y.C. 230 Prasad, K. 230, 234 Swaminathan, S. 109
Preobrazhenskii, V.V. 180
Levine, A. 401
a Ge. See Pusep, Y.A. 180 Tabata, A. 401
Limmer, W. 245 Py, M.A. 391 Takeuchi, M. 295
Lippens, D. 90 Tamamura, T. 7
Liu, J. 372 Quierin, M.A. 198 Tang, Z.K. 410
Liu, M.H. 435 Quivy, A.A. 250, 401 Tan, H.S. 138, 230, 234
Liu, S. 133 Taniguchi, K. 421
Li, Y. 133 Tansley, T.L. 176, 330
Rabizo, O.V. 120
Lozovik, Y. 429 Temmyo, J. 7
Radhakrishnan, K. 109, 230, 234, 449
Lubyshev, D. 318 Tetyorkin, V.V. 76
Rajagopal, A.K. 303, 51
Lubyshev, D.I. 180, 322 Thompson, A.G. 97
Ramrakhiani, M. 493
Thonke, K. 245
Ramvall, P. 382
Thornber, K.K. 256
Maehashi, K. 295 Razeghi, M. 34
Thornton, J.M.C. 489
Main, P.C. 192 Rees, G.J. 42
Ting, S.K. 230
Marahovka, I.1. 180 Reithmaier, J.P. 208
Tiong-Palisoc, S. 68
Matsushima, Y. 68 Richardson, B. 349
Tit, N. 386
Matthai, C.C. 349, 459, 489 Ritchie, D.A. 198, 203
Tse, M.S. 230, 234
Mei, X.B. 166 Roberts, C. 129, 345
Tsuji, K. 421
Miao, Y.B. 109 Roberts, J.S. 12
Tucker, C.R. 263
Milekhin, A.G. 180 Robson, P.N. 12, 42
Tu, C.W. 166
Milne, W.I. 138 Rodrigues, S.C.P. 250
Mil’shtein, S. 299 Rodriquez-Gironés, P.J. 42
Uekusa, S.-i. 156
Min, S.-K. 214 Rossi, J.C. 322
Ullrich, B. 117
Miyajima, S. 138 Rossow, U. 472
Uno, K. 406
Mizuno, Y. 156 Rowell, N.L. 160
Usher, B.F. 176
Mori, N. 192 Rykov, S.A. 120
Usui, A. 288
Moy, K. 97
Muessig, H. 208
Safonov, A.N. 000 Vanbésien, O. 90
Murray, R. 125, 129, 345
Saito, M. 267 Vaya, P. 17
Musikhiin, S.F. 120
Sakaki, H. 284 Vleuten, W.C.v.d. 485
Salagaj, T. 97 Voves, J. 417
Nabetani, Y. 454
Salemink, H.W.M. 485
Na, H.-K. 325
Sale, T.E. 12, 42 Wakahara, A. 454, 479
Nakashima, H. 295
Sasaki, A. 278, 406, 454, 479 Walker, R. 97
Nastaushev, Y.V. 322
Sato, K. 295 Wang, J. 192
Nawaz, R. 353
Sato, S. 171 Wang, K.L. 463
Nesterov, S.I. 47
Sato, Y. 171 Wang, L.J. 34
Nishiya, T. 7
Sauer, R. 245 Wang, R.L. 259
Noda, S. 406
Schmitz, D. 102 Wang, X. 372
Nomura, S. 467
Schoenfeld, O. 467 Wang, Y.H. 29, 435
Nomura, Y. 479
Schulte, F. 102 Weber, S. 245
Notzel, R. 7
Schumaker, N.E. 97 Weightman, P. 489
Nozue, Y. 410
Scolfaro, L.M.R. 250, 267, 396 Weng, J. 230, 234
Scopina, V.I. 47 Westwood, D.I. 145, 263, 349, 353
Ochiai, Y. 364 Semyagin, B.R.. 180 Wilkinson, C.D.W. 263
Ohmori, K. 68 Sheard, F.W. 239 Wilkinson, P.B. 239
Oliveira, J.B.B. 401 Sheng, H. 87 Wilks, S.P. 145, 353
Omling, P. 382 Shiba, K. 295 Williams, J.P. 263
Orth, A. 208 Silva, M.d.P.A. 322 Williams, R.H. 145
O'Reilly, E.P. 357 Sipahi, G.M. 396 Wolter, J.H. 485
Osotchan, T. 176 Sizov, F.F. 76 Woodhead, J. 12, 42
Skolnick, M.S. 42 Woods, R.C. 80
Pabla, A.S. 42 Soares, J.A.N.T. 267 Wu, D. 34
Panzlaff, K. 245 Solov’ev, S.A. 47
Parenteau, M. 160 Song, A. 367 Xiaohong, T. 72
Paret, J.M. 219 Song, C.-D. 325 Xu, H. 382
Park, J.M. 440 Stall, R.A. 97 Xu, W. 334, 341
Park, J.S. 463 Steinhagen, F. 59
Park, P.W. 446 Sugano, T. 364, 467 Yamaguchi, A.A. 288
Park, Y.-K. 214 Sugo, M. 7 Yamamoto, H. 421
Pease, R.F.W. 188 Sun, H. 133 Yamamoto, K. 364
Peng, Y. 133 Su, Y.K. 259 Yan, C.H. 166
Pepper, M. 198, 203 Svechnikov, G. 224 Yang, C.C. 259
Elsevier Science S.A.
Author Index of Volume 35
Yang, X. 372 Yu, H. 125, 129, 345 Zengerle, R. 273
Yarn, K.F. 29 Yu, Q. 372 Zhang, D.H. 449
Yi, H.-J. 34 Zhang, X. 184
Yoon, S.F. 109, 138, 230, 234, 449 Zahabi, S.M. 263 Zhao, X. 467
Yoshino. K. 68 Zakheim, D.A. 47 Zheng, H. 367, 372
Yuan. C. 97 Zawadzki, P. 97 Zhou, X. 230, 234
Elsevier Science S.A.

MATERIALS
SCIENCE &
ENGINEERING
B
Materials Science and Engineering B35 (1995) 501—507
Subject Index of Volume 35
Aluminium arsenide Conductance fluctuations
photoluminescence properties of AlAs/GaAs disordered superlat- low-dimensional transports in GaAs/AlGaAs quasi-one-dimen-
tices with fixed GaAs or AIAs layer thickness 406 sional wires by a correlation field analysis of the phase
Asymmetric double quantum well coherent interferences 364
field dependent vertical-transport studies in Alp 5,Gao 7,As/GaAs Conductivity
double-quantum-well structures 245 electrical conductivity of 5 doping superlattices parallel to the
growth direction 250
(111)B Confining effect
photoluminescence of piezoelectric strained InGaAs—GaAs theoretical study of resonant tunneling in symmetrical rectangu-
multi-quantum well p—i—n structures 42 lar triple-barrier structures with deep wells 421
Band structure calculations Contact resistance
single heterojunction structures for acoustic charge transfer characterization of Ni/Ge/Au/Ni/Au contact metallization on
devices 80 AlGaAs/InGaAs heterostructures for pseudomorphic het-
Blue shifts erojunction field effect transistor application 234
blue shifts from doubly 5-doped heterostructures 345 Correlation field analysis
Bulk micromachining low-dimensional transports in GaAs/AlGaAs quasi-one-dimen-
collective fabrication of microsystems compatible with CMOS sional wires by a correlation field analysis of the phase
through the CMP service 219 coherent interferences 364
Buried layer Coupling effects
influence of strain relaxation on the electronic properties of investigation of resonant interband tunneling structures using a
buried quantum wells and wires 357 three-band k - 6 model 435
Cadmium selenide
5 doping
zinc doped polycrystalline CdSe films for solar energy conversion
493 comparative studies of photoluminescence from n and p 6 dop-
Cadmium sulphide ing wells in GaAs 396
luminescence properties of p-type thin CdS films prepared by Defects
laser ablation 117 luminescence centres containing two, three and four hydrogen
Cadmium telluride atoms in radiation-damaged silicon 000
vertical electron transport in semiconductor superlattices Monte Delta doping
Carlo simulation 417 blue shifts from doubly 5-doped heterostructures 345
Carbon Deposition rate
analysis of reaction gases flow in CVD processes 156
photo-enhanced chemical vapour deposition of hydrogenated
amorphous silicon carbon using an internal discharge lamp 2DEG
138 anomalous peaks in the Shubnikov-de Haas spectra of a top
Carrier scattering gated AlGaAs/GaAs heterostructure 382
low-dimensional transports in GaAs/AlGaAs quasi-one-dimen- Diffraction
sional wires by a correlation field analysis of the phase growth and characterization of strain-compensated InAsP/
coherent interferences 364 GalnP and InGaAs/GalInP multiple quantum wells 166
CAD tools for microsystems Diffusion
collective fabrication of microsystems compatible with CMOS direct optical analysis of the carrier diffusion in semiconductor
through the CMP service 219 wire structures 273
Chemical vapour deposition Doping effects
analysis of reaction gases flow in CVD processes 156 doping dependence of intersubband transitions in Si, _ .Ge,/Si
photo-enhanced chemical vapour deposition of hydrogenated multiple quantum wells 463
amorphous silicon carbon using an internal discharge lamp luminescence properties of p-type thin CdS films prepared by
138 laser ablation 117
Clusters the study of GaAs/InGaAs 6-doping resonant interband tunnel-
the electronic structure and luminescence properties of porous ing diode 259
silicon and silicon nanoclusters 459 Double barrier quantum well structure
Conductance modulation characteristics of AlAs/GaAs double barrier quan-
shape effects of the conductance of a quantum ballistic constric- tum well resonant tunneling structure at microwave frequen-
tion in a two-dimensional electron gas 440 cies 446
Elsevier Science S.A.
502 Subject Index of Volume 35
asymmetric Fabry-Perot etalon structure in high optical
Electron conduction
power 64
anomalous peaks in the Shubnikov-de Haas spectra of a top
Fermi-edge singularity
gated AlGaAs/GaAs heterostructure 382
fermi-edge singularity of two dimensional electrons in asymmet-
non-linear generation of alternating current harmonics in quan-
ric coupled double quantum wells 325
tum dot superlattice miniband transport 256
Fibonacci superlattice
shape effects of the conductance of a quantum ballistic constric-
quantum-size layered PbS/C structures deposited by pulsed laser
tion in a two-dimensional electron gas 440
evaporation in vacuum 120
Electronic properties
Field profiles
influence of strain relaxation on the electronic properties of
measurements of interface potentials in quantum wells 299
buried quantum wells and wires 357
Focused ion beam
Electron microscopy
a closed UHV focused ion beam patterning and MBE regrowth
ballistic electron emission microscopy of InAs/Ga,_ , Al,As re-
technique 208
laxed heterostructure interfaces 349
measurements of interface potentials in quantum wells 299
GaAs
Electron—phonon interaction
blue shifts from doubly 5-doped heterostructures 345
raman scattering in PbI, clusters incorporated into zeolite cages
quantum interference effect in GaAs/AlGaAs double quantum
410
wells 372
Electron states
GaAs/AIAs
dual-branch electron waveguide couplers 90
the influence of exciton migration on photoluminescence lifetime
self-consistent calculation of electronic states in asymmetric dou-
in growth-interrupted GaAs/AIAs single quantum wells 125
ble barrier structure 367
GaAs/AlGaAs
Electron transport
switching characteristics of nonbiased optical bistability in asym-
vertical electron transport in semiconductor superlattices Monte
metric Fabry-Perot S-SEEDs made of extremely shallow
Carlo simulation 417
quantum well structures 24
Electron tunnelling
Gallium arsenide
examination of internally delta-doped gallium arsenide resonant
a comparison of observed and simulated scanning tunneling
tunnelling structures 353
images of the reconstructed GaAs(001) surface 489
Elementary excitations
a hole facet wire formed by MBE regrowth over an ex-situ
the electronic structure and luminescence properties of porous
patterned GaAs substrate 203
silicon and silicon nanoclusters 459
a novel approach in fabrication and study of laterally quantum-
Engineered molecular layer epitaxy
confined resonant tunnelling diodes 192
real-time monitoring of heteroepitaxial growth processes on the
Be delta-doped layers in GaAs studied by scanning tunnelling
silicon(001) surface by p-polarized reflectance spectroscopy
microscopy 485
472
characterization of Ni/Ge/Au/Ni/Au contact metallization on
Epitaxial growth
AlGaAs/InGaAs heterostructures for pseudomorphic het-
novel high temperature metal organic chemical vapor deposition
erojunction field effect transistor application 234
vertical rotating-disk reactor with multizone heating for
comparative studies of photoluminescence from n and p 6 dop-
GaN and related materials 97
ing wells in GaAs 396
Epitaxial regrowth
critical layer thickness in MOCVD grown InGaAs-GaAs
a closed UHV focused ion beam patterning and MBE regrowth
strained quantum wells 184
technique 208
electrical conductivity of 56 doping superlattices parallel to the
Epitaxial silicon
growth direction 250
doping dependence of intersubband transitions in Si, _ ,Ge,/Si
electron mobility in low temperature grown gallium arsenide 330
multiple quantum wells 463
examination of internally delta-doped gallium arsenide resonant
Epitaxy of thin films
tunnelling structures 353
state-of-the-art control of growth of superlattices and quantum
fermi-edge singularity of two dimensional electrons in asymmet-
wells 102
ric coupled double quantum wells 325
Etching
formation of AlGaAs quantum wires on vicinal GaAs(110)
reactive ion etched quantum wire structures for laser applications
surfaces misoriented 3° toward (111)A by molecular beam
47
epitaxy 295
selective wet etching of a GaAs/Al,.Ga,_ .As heterostructure
influence of surface structure on surface segregation and alloy
with citric acid—hydrogen peroxide solutions for pseudo-
properties in (100)- and (311)-oriented InGaAs/GaAs het-
morphic GaAs/Al,Ga,_,As_ heterofunction field effect
erostructures 318
transistor fabrication 230
investigation of the photoluminescence linewidth broadening in
Excitation spectra
symmetric and asymmetric InGaAs/GaAs n-type 6-doped
excitation spectra of two-dimensional bounded electronic sys-
quantum wells 401
tems in a strong magnetic field 429
magnetotunnelling transport phenomena and quantum chaos in
Exciton migration
semiconductor heterostructures 239
the influence of exciton migration on photoluminescence lifetime
native defects in gallium arsenide grown by molecular beam
in growth-interrupted GaAs/AIAs single quantum wells 125
epitaxy and metallorganic chemical vapour deposition:
Extons
effects of irradiation 160
thermalization effects of low dimensional excitons in quantum
new hole negative differential resistance strained-layer device 87
wires and quantum wells 284
non-linear generation of alternating current harmonics in quan-
tum dot superlattice miniband transport 256
Fabry-Perot cavity photoluminescence in degenerate p-type GaAs layers grown by
noise characteristics of electro-absorptive logic device utilizing molecular beam epitaxy 449
Subject Index of Volume 35 503
photoluminescence properties of AlAs/GaAs disordered super- selective wet etching of a GaAs/Al,Ga,_ ,.As heterostructure
with citric acid—hydrogen peroxide solutions for pseudo-
lattices with fixed GaAs or AIAs layer thickness 406
morphic GaAs/Al,.Ga,_,As_ heterofunction field effect
photoreflectance investigations of semiconductor device struc-
transistor fabrication 230
tures 267
HEMT
proton implantation of Al,Ga,_ ,As/GaAs resonant-tunnelling
photoreflectance investigations of semiconductor device struc-
diode structures 376
tures 267
role of the InAs monomolecular plane inserted in bulk GaAs
High-field effects
386
non-linear generation of alternating current harmonics in quan-
selective wet etching of a GaAs/Al,Ga,_ .As heterostructure
tum dot superlattice miniband transport 256
with citric acid—hydrogen peroxide solutions for pseudo-
morphic GaAs/Al,Ga,_,.As_ heterofunction field effect
Indium
transistor fabrication 230
influence of surface structure on surface segregation and alloy
self-organized InGaAs quantum disk lasers 7
properties in (100)- and (311)-oriented InGaAs/GaAs het-
the control and modification of metal-semiconductor interfaces
erostructures 318
using multi quantum barriers 145
Indium aluminum arsenide
the study of GaAs/InGaAs 6-doping resonant interband tun-
optical and structural characterizations for optimized growth of
neling diode 259
Ing sxAly 4gAs on InP substrates by molecular beam epitaxy
thermalization effects of low dimensional excitons in quantum
109
wires and quantum wells 284
Indium arsenide
top sawtooth grating for GaAs/AlGaAs quantum well IR de-
new hole negative differential resistance strained-layer device 87
tectors 56
role of the InAs monomolecular plane inserted in bulk GaAs
Gallium indium phosphide
386
visible vertical cavity surface emitting lasers at 4 < 650 nm 12
Indium nitride
Gallium—indium phosphide on silicon(001)
InN thin-film growth using an ECR plasma source 171
real-time monitoring of heteroepitaxial growth processes on the
Indium phosphide
silicon(001) surface by p-polarized reflectance spectroscopy
hydride — VPE embedding of InAlGaAs laser structures with
472
SI InP:Fe 59
Gallium nitride
Infrared detector
novel high temperature metal organic chemical vapor deposi-
MBE and MOCVD growth of AlGaAs—AlAs—GaAs double
tion vertical rotating-disk reactor with multizone heating
barrier multiple quantum well infrared detector 176
for GaN and related materials 97
Infrared photodetectors
top sawtooth grating for GaAs/AlGaAs quantum well IR de-
tectors 56
Heterojunctions Infrared spectroscopy
single heterojunction structures for acoustic charge transfer doping dependence of intersubband transitions in Si, _ ,Ge,/Si
devices 80 multiple quantum wells 463
Heteromaterials InGaAs
growth of GaAs—InP heteromaterials and corresponding strain the effects of In segregation on the emission properties of
determination 133 In. Ga, _ .As/GaAs quantum wells 129
Heterostructures Intraband relaxation
anomalous peaks in the Shubnikov-de Haas spectra of a top optimized design parameters of InGaAs—InP quantum well
gated AlGaAs/GaAs heterostructure 382 lasers 17
a novel approach in fabrication and study of laterally quan- Intrinsic defects
tum-confined resonant tunnelling diodes 192 native defects in gallium arsenide grown by molecular beam
ballistic electron emission microscopy of InAs/Ga, _ , Al,As re- epitaxy and metallorganic chemical vapour deposition:
laxed heterostructure interfaces 349 effects of irradiation 160
characterization of Ni/Ge/Au/Ni/Au contact metallization on Ion implantation
AlGaAs/InGaAs heterostructures for pseudomorphic het- proton implantation of Al,Ga,_ ,As/GaAs resonant-tunnelling
erojunction field effect transistor application 234 diode structures 376
charge capture in AlGaAs/GaAs heterostructures with disor-
dered antidot lattice 322 Kinetics of heteroepitaxy
determination of barrier heights in heterostructures utilising real-time monitoring of heteroepitaxial growth processes on the
real-space transfer of hot electrons 263 silicon(001) surface by p-polarized reflectance spectroscopy
electrical conductivity of 5 doping superlattices parallel to the 472
growth direction 250
influence of surface structure on surface segregation and alloy Laser
properties in (100)- and (311)-oriented InGaAs/GaAs het- state-of-the-art control of growth of superlattices and quantum
erostructures 318 wells 102
magnetotunnelling transport phenomena and quantum chaos in Laser processing
semiconductor heterostructures 239 hydride — VPE embedding of InAlGaAs laser structures with
migration of silicon atoms in planar-doped GaAs/AlGaAs SI InP:Fe 59
modulation doped fluid effect transistor heterostructures luminescence properties of p-type thin CdS films prepared by
grown by molecular beam epitaxy 149 laser ablation 117
photo-Hall studies of modulation-doped field-effect transistor Lead iodide clusters
heterostructures using (InAs),,(GaAs),, superlattice chan- Raman scattering in Pbl, clusters incorporated into Zeolite
nels 391 cages 410
504 Subject Index of Volume 35
formation of AlGaAs quantum wires on vicinal GaAs(110)
Light emitting diodes
surfaces misoriented 3° toward (111)A by molecular beam
barrier-modulated GaAs/InGaAs quantum well optoelectronic
epitaxy 295
switch (QWOES) prepared by molecular beam epitaxy
Ge composition dependence of photoluminescence properties of
29
Si, _. Ge,/Si disordered superlattices 479
disordered superlattices 278
growth and characterization of strain-compensated InAsP
Lithography
GalnP and InGaAs/GalInP multiple quantum wells 166
can nanolithography ever be a manufacturing technology? 188
MBE and MOCVD growth of AlGaAs—AlAs—GaAs double
LIGA
barrier multiple quantum well infrared detector 176
collective fabrication of microsystems compatible with CMOS
migration of silicon atoms in planar-doped GaAs/AlGaAs
through the CMP service 219
modulation doped fluid effect transistor heterostructures
Localization
grown by molecular beam epitaxy 149
quantum-size layered PbS/C structures deposited by pulsed
optical and structural characterizations for optimized growth of
laser evaporation in vacuum 120
Iny s>Alp 4gAs on InP substrates by molecular beam epitaxy
Luminescence of p-type CdS
109
luminescence properties of p-type thin CdS films prepared by
photoluminescence in degenerate p-type GaAs layers grown by
laser ablation 117
molecular beam epitaxy 449
Monte Carlo models
electron mobility in low temperature grown gallium arsenide
Magnetic field effect
330
edge states in strong electric and magnetic fields in a two-di-
vertical electron transport in semiconductor superlattices
mensional semiconductor system 341
Monte Carlo simulation 417
excitation spectra of two-dimensional bounded electronic sys-
MOCVD
tems in a strong magnetic field 429
critical layer thickness in MOCVD grown InGaAs—GaAs
influence of strong magnetic fields on the ionization of the
strained quantum wells 184
modulation-doped donors in AlI,Ga,_ ,.As—GaAs-
photoluminescence properties of AlGaP superlattices 454
Al,,Ga, _ ,,As single quantum wells 334
state-of-the-art control of growth of superlattices and quantum
MBE
wells 102
the effects of In segregation on the emission properties of
Multiple quantum wells
In. Ga, _ .As/GaAs quantum wells 129
IV—VI compositional MQWs and SLs for optoelectronic appli-
Measurement of Fermi energy
cations 76
measurements of interface potentials in quantum wells 299
Multi-project wafer
Metalo—organic chemical vapor deposition (MOCVD)
collective fabrication of microsystems compatible with CMOS
high power aluminium-free InGaAsP/GaAs pumping diode
through the CMP service 219
lasers 34
MBE and MOCVD growth of AlGaAs—AlAs—GaAs double
barrier multiple quantum well infrared detector 176
n—i—p-—i structure
novel high temperature metal organic chemical vapor deposi-
saturation of the non-linear absorption in n—i—p-—i multiple
tion vertical rotating-disk reactor with multizone heating
quantum well structures 72
for GaN and related materials 97
Nanolithography
self-organized InGaAs quantum disk lasers 7
can nanolithography ever be a manufacturing technology? 188
Metal—organic source modulation epitaxy
Nitrides
growth of GaAs—InP heteromaterials and corresponding strain
InN thin-film growth using an ECR plasma source 171
determination 133
Non-linear effects
Metal—organic vapour phase, epitaxy
quantum transport and non-linear dynamics of interacting
enhancement of side wall growth rate during MOVPE growth
quantized fields and applications to nanoelectronics and
on patterned substrates with CCl, 214
optoelectronics 51
Metal—semiconductor structures
the control and modification of metal-semiconductor interfaces
using multi quantum barriers 145
Optical matrix element
MESFET
anisotropic optical matrix elements in [hhk]-oriented quantum
photoreflectance investigations of semiconductor device struc-
wires 288
tures 267
Optical properties
Microwave oscillator
disordered superlattices 278
modulation characteristics of AlAs/GaAs double barrier quan-
formation of AlGaAs quantum wires on vicinal GaAs(110)
tum well resonant tunneling structure at microwave fre-
surfaces misoriented 3° toward (111)A by molecular beam
quencies 446
epitaxy 295
Molecular beam epitaxy
influence of surface structure on surface segregation and alloy
a closed UHV focused ion beam patterning and MBE re-
properties in (100)- and (311)-oriented InGaAs/GaAs het-
growth technique 208
erostructures 318
a hole facet wire formed by MBE regrowth over an ex-situ
nanocrystalline Si: a material constructed by Si quantum dots
patterned GaAs substrate 203
467
a hole facet wire formed by MBE regrowth over an ex-situ
reactive ion etched quantum wire structures for laser applica-
patterned GaAs substrate vii
tions 47
barrier-modulated GaAs/InGaAs quantum well optoelectronic temperature dependence of luminescence in ZnSe 68
switch (QWOES) prepared by molecular beam epitaxy
the electronic structure and luminescence properties of porous
29
silicon and silicon nanoclusters 459
Subject Index of Volume 35
thermalization effects of low dimensional excitons in quantum Piezoelectric
wires and quantum wells 284 photoluminescence of piezoelectric strained InGaAs—GaAs
Optical spectra in an electrical field multi-quantum well p—i-—n structures 42
quantum-size layered PbS/C structures deposited by pulsed Plasma processing
laser evaporation in vacuum 120 InN thin-film growth using an ECR plasma source 171
Optoelectronics Proton irradiation
IV—VI compositional MQWs and SLs for optoelectronic appli- native defects in gallium arsenide grown by molecular beam
cations 76 epitaxy and metallorganic chemical vapour deposition:
effects of irradiation 160
Quantum effects
p—i—n diodes
disordered superiattices 278
photoluminescence of piezoelectric strained InGaAs—GaAs
dual-branch electron waveguide couplers 90
multi-quantum well p—i—n structures 42
formation of AlGaAs quantum wires on vicinal GaAs(110)
p—n junction
surfaces misoriented 3° toward (111)A by molecular beam
a hole facet wire formed by MBE regrowth over an ex-situ
epitaxy 295
patterned GaAs substrate 203
nanocrystalline Si: a material constructed by Si quantum dots
p-type CdS
467
luminescence properties of p-type thin CdS films prepared by
photoluminescence properties of AlGaP superlattices 454
laser ablation 117
quantum interference effect in GaAs/AlGaAs double quantum
Photo-CVD
wells 372
photo-enhanced chemical vapour deposition of hydrogenated
quantum transport and non-linear dynamics of interacting
amorphous silicon carbon using an internal discharge lamp
quantized fields and applications to nanoelectronics and
138
optoelectronics 51
Photoelectrochemical cells
theory of novel nonlinear quantum transport effects in reso-
zinc doped polycrystalline CdSe films for solar energy conver-
nant tunneling structures 303
sion 493
Quantum structures
Photogenerated carriers
MBE and MOCVD growth of AlGaAs—AlAs—GaAs double
modulation characteristics of AlAs/GaAs double barrier quan-
barrier multiple quantum well infrared detector 176
tum well resonant tunneling structure at microwave fre-
nanocrystalline Si: a material constructed by Si quantum dots
quencies 446
467
Photoluminescence
reactive ion etched quantum wire structures for laser applica-
blue shifts from doubly 5-doped heterostructures 345
tions 47
comparative studies of photoluminescence from n and p 6 dop-
self-organized InGaAs quantum disk lasers 7
ing wells in GaAs 396
single heterojunction structures for acoustic charge transfer
direct optical analysis of the carrier diffusion in semiconductor
devices 80
wire structures 273
theoretical study of resonant tunneling in symmetrical rectan-
fermi-edge singularity of two dimensional electrons in asym-
metric coupled double quantum wells 325 gular triple-barrier structures with deep wells 421
thermalization effects of low dimensional excitons in quantum
field dependent vertical-transport studies in Aly 5,Gap 7,As
wires and quantum wells 284
GaAs double-quantum-well structures 245
Ge composition dependence of photoluminescence properties of Quantum well
Si, _ .Ge,/Si disordered superlattices 479 critical layer thickness in MOCVD grown InGaAs—GaAs
growth and characterization of strain-compensated InAsP, strained quantum wells 184
GalnP and InGaAs/GalnP multiple quantum wells doping dependence of intersubband transitions in Si, _ ,Ge,/Si
166 multiple quantum wells 463
investigation of the photoluminescence linewidth broadening in dual-branch electron waveguide couplers 90
symmetric and asymmetric InGaAs/GaAs n-type 6-doped growth and characterization of strain-compensated InAsP/
quantum wells 401 GalnP and InGaAs/GaInP multiple quantum wells 166
native defects in gallium arsenide grown by molecular beam influence of strain relaxation on the electronic properties of
epitaxy and metallorganic chemical vapour deposition: buried quantum wells and wires 357
effects of irradiation 160 investigation of the photoluminescence linewidth broadening in
optical and structural characterizations for optimized growth of symmetric and asymmetric InGaAs/GaAs n-type 5-doped
Ing 52>Aly 4gAs on InP substrates by molecular beam epitaxy quantum wells 401
109 magnetotunnelling transport phenomena and quantum chaos in
photoluminescence in degenerate p-type GaAs layers grown by semiconductor heterostructures 239
molecular beam epitaxy 449 measurements of interface potentials in quantum wells 299
photoluminescence properties of AlAs/GaAs disordered super- new hole negative differential resistance strained-layer device 87
lattices with fixed GaAs or AIAs layer thickness 406 optimized design parameters of InGaAs—InP quantum well
photoluminescence properties of AlGaP superlattices 454 lasers 17
temperature dependence of luminescence in ZnSe 68 saturation of the non-linear absorption in n-—i—p-—i multiple
visible vertical cavity surface emitting lasers at 4<650 nm quantum well structures 72
12 state-of-the-art control of growth of superlattices and quantum
Photoreflectance wells 102
photoreflectance investigations of semiconductor device struc- the effects of In segregation on the emission properties of
tures 267 In. Ga, _ ,As/GaAs quantum wells 129
Subject Index of Volume 35
theory of novel nonlinear quantum transport effects in reso- asymmetric Fabry-Perot S-SEEDs made of extremely
nant tunneling structures 303 shallow quantum well structures 24
the study of GaAs/InGaAs 6-doping resonant interband tun- Scanning tunnelling microscopy
neling diode 259 Be delta-doped layers in GaAs studied by scanning tunnelling
Quantum well effects microscopy 485
top sawtooth grating for GaAs/AlGaAs quantum well IR de- Schottky barrier
tectors 56 ballistic electron emission microscopy of InAs/Ga,_ , Al,As re-
Quantum wells laxed heterostructure interfaces 349
barrier-modulated GaAs/InGaAs quantum well optoelectronic Segregation
switch (QWOES) prepared by molecular beam epitaxy 29
influence of surface structure on surface segregation and alloy
direct optical analysis of the carrier diffusion in semiconductor
properties in (100)- and (311)-oriented InGaAs/GaAs het-
wire structures 273
erostructures 318
noise characteristics of electro-absorptive logic device utilizing
the effects of In segregation on the emission properties of
asymmetric Fabry-Perot etalon structure in high optical
In. Ga, _ .As/GaAs quantum wells 129
power 64
Self electro-optic effect device
quantum interference effect in GaAs/AlGaAs double quantum
noise characteristics of electro-absorptive logic device utilizing
wells 372
asymmetric Fabry—Perot etalon structure in high optical
switching characteristics of nonbiased optical bistability in
power 64
asymmetric Fabry-Perot S-SEEDs made of extremely
Semiconductor devices
shallow quantum well structures 24
are quantum semiconductor devices delivering? |
Quantum wires
characterization of Ni/Ge/Au/Ni/Au contact metallization on
anisotropic optical matrix elements in [hhk]-oriented quantum
AlGaAs/InGaAs heterostructures for pseudomorphic het-
wires 288
a novel approach in fabrication and study of laterally quan- erojunction field effect transistor application 234
tum-confined resonant tunnelling diodes 192 dual-branch electron waveguide couplers 90
examination of internally delta-doped gallium arsenide resonant
tunnelling structures 353
Raman scattering
quantum transport and non-linear dynamics of interacting
optical and structural characterizations for optimized growth of
quantized fields and applications to nanoelectronics and
Iny 5>Aly 4gAs on InP substrates by molecular beam epitaxy
optoelectronics 5]
109
reactive ion etched quantum wire structures for laser applica-
Raman scattering in PblI, clusters incorporated into zeolite
tions 47
cages 410
selective wet etching of a GaAs/Al,Ga,_ ,As heterostructure
Real-time optical process monitoring
real-time monitoring of heteroepitaxial growth processes on the with citric acid~hydrogen peroxide solutions for pseudo-
silicon(001) surface by p-polarized reflectance spectroscopy morphic GaAs/Al,Ga,_,.As_ heterofunction field effect
472 transistor fabrication 230
Re number self-organized InGaAs quantum disk lasers 7
analysis of reaction gases flow in CVD processes 156 Semiconductor for devices
Resonant enhancement proton implantation of Al,Ga,_ ,As/GaAs resonant-tunnelling
the influence of exciton migration on photoluminescence life- diode structures 376
time in growth-interrupted GaAs/AlAs single quantum Semiconductors
wells 125 direct optical analysis of the carrier diffusion in semiconductor
Resonant interband tunnelling wire structures 273
investigation of resonant interband tunneling structures using a
edge states in strong electric and magnetic fields in a two-di-
three-band k - 6 model 435
mensional semiconductor system 341
Resonant tunnelling
magnetotunnelling transport phenomena and quantum chaos in
a novel approach in fabrication and study of laterally quan-
semiconductor heterostructures 239
tum-confined resonant tunnelling diodes 192
photoluminescence of piezoelectric strained InGaAs—GaAs
modulation characteristics of AlAs/GaAs double barrier quan-
multi-quantum well p—i—n structures 42
tum well resonant tunneling structure at microwave fre-
spontaneous anisotropic chemical etching as a nanostructure
quencies 446
surface modification method for the A'''BY semiconduc-
theoretical study of resonant tunneling in symmetrical rectan-
tors 224
gular triple-barrier structures with deep wells 421
temperature dependence of luminescence in ZnSe 68
Resonant tunnelling diodes
side-gated GaAs/AlGaAs double barrier resonant tunnelling zinc doped polycrystalline CdSe films for solar energy conver-
diodes formed by patterned substrate regrowth 198 sion 493
Resonant tunnelling structures Shape effects
theory of novel nonlinear quantum transport effects in reso- shape effects of the conductance of a quantum ballistic con-
nant tunneling structures 303 striction in a two-dimensional electron gas 440
Shubnikov-de Haas
anomalous peaks in the Shubnikov-de Haas spectra of a top
Schottky barrier
gated AlGaAs/GaAs heterostructure 382
the control and modification of metal-semiconductor interfaces
SiGe
using multi quantum barriers 145
Self electro-optic effect device Ge composition dependence of photoluminescence properties of
switching characteristics of nonbiased optical bistability in Si, _ .Ge,/Si disordered superlattices 479