Materials Engineering

171 Pages·2014·20.708 MB·English

by  Fang He

Materials Engineering
Edited by
Fang He
Materials Engineering
Selected, peer reviewed papers from the
2nd International Conference on
Materials Engineering
(ICMEN 2014),
May 17-18, 2014, Nanjing, China
Edited by
Fang He
Copyright  2014 Trans Tech Publications Ltd, Switzerland

All rights reserved. No part of the contents of this publication may be reproduced or
transmitted in any form or by any means without the written permission of the
publisher.

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Volume 576 of
Applied Mechanics and Materials
ISSN print 1660-9336
ISSN cd 1660-9336
ISSN web 1662-7482

Full text available online at http://www.scientific.net

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Preface

A great number of innovative works & efforts are being undertaken by scientists and
engineers worldwide to meet ever-increasing demand for advanced materials, to put forward
for R & D and to speed up the practical applications of emerging new materials. This book
thus aims to provide an in-depth coverage of current researching trends pertinent to materials
science and engineering ranging from new materials design and characterization, to materials
manufacturing process optimization, to computer-aided materials calculations. The targeted
readers are undergraduates, researchers and industrial engineers who need to keep abreast of
most recent advances in these important topics.
In general, this book covers 28 papers accepted for presentations in the 2014 2nd
International Conference on Materials Engineering (ICMEN2014), which was held in the
beautiful city of Nanjing, China, between May 17th and May 18th, 2014. These papers have
touched upon the researching fronts and hot topics in materials engineering, such as
innovative synthesis of new materials, new characterization of materials, structural-property
relationship, practical materials processing technologies, and other material-related theories
(including modeling, performance analysis, effects of key factors). In particular, quite some
highlights can be found in this book. To name a few, the works on synthesis of polymeric
composite, unusual processing methods for alloy, high strengthened cements obtained are all
very innovative and appealing to readers.
You may have sensed that this book reports many works coming from truly multidiscipline
areas in materials engineering. It is organized on four sections in sequence. The first section
focuses on Energy and Environment Materials, while the second dealing with Function and
Electronic Material. Papers concerning High Performance Structural Materials are put into the
third section . The last section concentrates on papers on Materials Processing Technology,
including Materials Processing and Handling, Semiconductors materials manufacturing,
Fatigue and Fracture, and Structural modeling, and so on so forth.
Herein, we would like to sincerely thank all the authors for sharing with their new ideas,
researching results, practical experience and best field practices. Special thanks will be given
to all the reviewers/experts in evaluating and selecting all high quality papers.

We hope that you will enjoy reading this book.

Book Editors
Dr. Fang He
Sichuan University
Sichuan, China
ICMEN 2014 Committees
General Chair
Yingtao Jiang, University of Nevada, Las Vegas, USA
Program Chair
Marcos Cheney University of Maryland, Eastern Shore, USA
Program Committee
Aniruddha Bhattacharjya Amity School Of Engineering And Technology, India
Aniruddha Chandra National Institute of Technology, India
Cherng-Ying Chiou Overseas Chinese University, China
Erik Reimhult University of Natural Resources and Life Sciences, Austria
Herb’s Resources Association/Sichuan Univsity, Chongqing,
Fang He
China
Hasnelly Sriyono Pasundan University, Indonesia
Huan Yu Chengdu University of Technology, China
Hui Zhao University of Nevada, Las Vegas
Javier Narciso Alicante University, Spain
J.Paulo Davim University of Aveiro, Portugal
Marco Illinois Institute of Technology, Italy
Kuswara Setiawan Faculty of Computer Science UPH Surabaya, Indonesia
Rafael Luque Universidad de Cordoba, Spain
Rami Hikmat Fouad Hashemite university, Jordan
Xin Hong Shanghai University, China
Xin Yanjun Qingdao Agricultural university, China
Raj Das University of Auckland, New Zealand
Yurong Yang Henan Agriculture University, China
Table of Contents
Preface and Committees
Chapter 1: Function and Electronic Materials
Growth Dynamics of Single Void during Czochralski Silicon Crystal Growth Using Phase-
Field Modeling
J. Wang, X.J. Guan, X.Y. Zhang and Q.K. Zeng 3
Electronic and Optical Properties of Sn-Doped Zno with and without O Vacancy
X.C. Lai, Y.B. Hou, Z.H. Sun and L.L. Chen 9
Enhanced Flux Pinning in La Sr CuO Thin Film with the Ferroelectric Polarization
1.84 0.16 4
Effect of BiFeO
3
F.G. Liu and W. Liu 15
Controllable Synthesis of Monodisperse Metal Oxide Nanostructures via a Solvothermal
Route and Their Catalytic Properties
L. Liu, X.J. Zhang, J.Z. Liu and R.Y. Wang 21
Preparation and Optical Properties of One-Dimensional Ag/SiOx Photonic Crystal
G.M. Zhang, C. Wang, Y.J. Guo, W. Wei and X.X. Song 27
Study on Fabrication and Properties of In Situ Si and Al O Particulate Reinforced
2 3
Composites
S.L. Zhang, Z.K. Zhang and Y. Zhao 33
The Synthesis and Application of the NaCl-KCl-K HfCl Electrolyte
2 6
X. Liu, B. Song, W.Y. Ke and L.J. Wang 39
The Study on Photocatalytic Degradation of Methyl Orange Using SrFe Co O
0.5 0.5 3-δ
F.F. Liu, J. Qiao, C. Li, H.Y. Meng and X.H. Huang 45
Preparation of Antimicrobial PHEMA-g-PCBMAE Hydrogels with Improved Mechanical
Properties
R.C. Zeng, J. Cheng, S.P. Xu, Q. Liu, X.F. Wen and P.H. Pi 49
Chapter 2: High Performance Structural Material
Research on the Hydration Mechanism of Portland Cement with Magnesium Slag
J.P. Deng, X.L. Wang and Y.P. Guo 57
Effects of Mono-And Dianhydrides on Thermal and Mechanical Properties Enhancement of
Polybenzoxazine: A Property Comparison
S. Rimdusit, W. Punuch and C. Jubsilp 63
Reliability Optimization Design of Composite Transmission Shaft
D.Y. Cai, F.J. Liu, X.H. Yin and F.H. Chen 69
Effect of Rubber Contents on Tribological and Thermomechanical Properties of
Polybenzoxazine
C. Jubsilp, S. Rimdusit and T. Takeichi 75
Study on Seismic Resistant Properties of the Integral Structure after Adding Steel Storey on
Top of the Multistoried Brick-Concrete Architecture
Y.H. Guo, X. Cao and L. Wang 81
Thermally Induced Vibration Analysis of Composite Laminate Based on Equivalent
Displacement Method
X.H. Kong and Z.J. Wang 87
Chapter 3: Materials Processing Technology
Mesoscopic Simulation Analysis of the Influence of Die Wall Friction on Compression
Process of Powder Particles
M.H. Jiao, D. Li, L. Sun and M. Gu 97
b Materials Engineering
The Influence of Cr Gradient of Transition Layer on Creep Rupture Properties of
Dissimilar Joint
B.Q. Zhang, Z.P. Cai, K.J. Li and J.L. Pan 103
Influence of Prior Austenite Grain Size on the Dispersion of Fatigue Crack Propagation
Thresholds in Weld Metal
L.G. Sun, Z.P. Cai, J.L. Pan, X. Liu, X.J. Xu and Y.M. Ding 111
Modeling of Disk-Shaped Anode-Support SOFC with Proton Conductor Electrolyte and
Sm Sr CoO -Sm Ce O Cathode
0.5 0.5 3-δ 0.2 0.8 2-δ
Q.P. Zhang and W. Liu 121
Electroless Copper Coating on Boron Carbide Particles by Using Copper Activation
Method
W. Wang, Q.L. Li, W. Liu, Y.W. Yao and X.J. Li 127
Strength Loss Method to Evaluate the Sulfate Attack Resistance of the Cement-Porous
Silica Fume Mortar
S.Q. Zhang, S.X. Zhang, Y.F. Fu and D.M. Wang 133
Thermal Vibration Compound Stress Relief on Thick DH36 Steel Welded Plates
S.Q. Li, H.Y. Fang, X.S. Liu and W. Cui 143
Iron Removal from Hafnium Crystal Bar by Iodide Process
L.S. Tian, Y.X. Yin and L.J. Wang 149
Research and Application of Numerical Control Milling Machine Tool Length
Compensation Instructions
D.Y. Sun and P. Zhou 155
Effect of Coiling Temperature and Cold Rolling Reduction on Planar Anisotropy of Ti-
Alloyed Low Carbon Steel
G.T. Zhang, Z.W. Zheng and J. Chang 161
Device Design of Hot-Air Curing and Study on the Properties of Hot-Air Cured Phosphate
Sand
L. Xia, W. Long, J. Huang and Y.S. Zhang 167
The Effects of Cross Cold Rolling Reductions on Microstructure of Ti+P-IF Steel
Y. Du and G.L. Xu 171
The Breakdown Characteristic Research of Polymer Materials in Liquid Nitrogen
T.Y. Niu, D.S. Xu, Y. Wang, L. Li, Q. Lan, Q.J. Zhang, Y. Lu and H.L. Jiao 177
CHAPTER 1:

Function and Electronic Materials
Applied Mechanics and Materials Vol. 576 (2014) pp 3-7
© (2014) Trans Tech Publications, Switzerland
doi:10.4028/www.scientific.net/AMM.576.3
Growth Dynamics of Single Void during Czochralski Silicon Crystal
Growth using Phase-field Modeling
Jin Wang1,2,a, Xiaojun Guan1,2,b, Xiangyu Zhang1,2,c and Qingkai Zeng3,d
1School of Materials Science and Engineering, Shandong University, Jinan 250061, China
2State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
3School of Aeronautics, Shandong Jiaotong University, Jinan 250357, China
[email protected], [email protected], [email protected],
[email protected]
Keywords: Silicon crystal, Czochralski process, Single void, Growth dynamics, Phase-field model.
Abstract. To investigate the growth dynamics of the single void during Czochralski silicon growth
as well as capture the basic features of the diffusion-controlled dynamic mechanisms, a phase field
method has been developed. The free energy of the system involving the chemical free energy and
the gradient energy is presented. Numerical tests were performed to examine the capability of this
model, and the results show that: the void grows due to the absorption of vacancies in the matrix,
which essentially reduces the free energy of the system; with the growth of the void, there forms
vacancy concentration gradient towards the void in the matrix; the increase of initial vacancy
concentration contributes to a larger void size and growth rate.
1. Introduction
Silicon single crystals grown by the Czochralski (or CZ) process are important materials for the
application of a vast majority of microelectronic devices in modern electronic information and
semiconductor industry. The rapid development of information technology and the enhancement of
IC manufacture complexity constantly propose higher requirement on the quality of silicon crystals.
In the CZ process, various intrinsic point defects and impurities are introduced into the melt/crystal
interface and aggregate into microdefects with the pulling of crystal [1]. These microdefects, such
as voids, dislocation loops, and oxygen precipitates, significantly affect the performance and quality
of the continuously shrinking microelectronic devices. Thus, it is a key to understand the
evolutionary dynamics of these microdefects, for the sake of further predicting and controlling their
sizes and densities.
To investigate the dynamics of microdefect evolution and capture the features of the formation
and growth of these grown-in microdefects, different simulation tools were developed [2-4].
Recently, Hu [5], Rokkam [6] and Yu [7] employed the phase field method in simulating the void
formation and evolution in irradiated metals, which presented an exploratory methodology to study
the behavior of microdefect evolution within the extent of mesoscale. In this paper, we investigate
the problem of void growth dynamics during CZ silicon crystal growth within the framework of the
phase-field modeling approach. Unlike the static state of irradiated metals, the microdefects
embedded in the CZ silicon matrix evolve with the pulling of the crystal bar.
2. Phase field model
In the typical CZ crystal growth, with the increasing distance from the melt/crystal interface and
sharply dropping temperature, point defects undergo a complex process involving their transport
and the Frenkel reaction, which corresponds to a short distance from the melt/crystal interface,
usually termed the recombination length [1,3]. Beyond the recombination length, the dominance of