Lightwave Communications Technology: Semiconductor Injection Lasers, II Light-Emitting Diodes

363 Pages·1985·14.49 MB·English

by  W.T. Tsang (Eds.)

SEMICONDUCTORS
AND SEMIMETALS
VOLUME 22
Lightwave Communications Technology
Part C
Semiconductor Injection Lasers, I1
Light-Emitting Diodes
Semiconductors and Semimetals
A Treatise
Edited by R. K. WILLARDSON ALBERT C. BEER
CRYSCON TECHNOLOGIES, INC. BATTELLE COLUMBUS LABORATORIES
PHOENIX, ARIZONA COLUMBUS, OHIO
S E M I C O N D U C T O R S
A N D SEMIMETALS
VOLUME 22
Lightwave Communications Technology
Volume Editor
W. T. TSANG
AT&T BELL LABORATORlES
HOLMDEL, NEW JERSEY
Part C
Semiconductor Injection Lasers, I1
Light-Emitting Diodes
1985
ACADEMIC PRESS, INC.
(Harcourt Brace Jovanovich, Publishers)
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Contents
LISTO F CONTRIBUTO.RS. . . . . . . . . . . . . . . . . . ix
TREATISFEO REWORD. . . . . . . . . . . . . . . . . . . x i
...
FOREWOR.D . . . . . . . . . . . . . . . . . . . . . xi11
PREFACE. . . . . . . . . . . . . . . . . . . . . . . xvii
Chapter 1 Review of InCaAsP/InP Laser Structures and
Comparison of Their Performance
R . J . Nelson and N . K . Dutta
1. Introduction . . . . . . . . . . . . . . . . . . . . i
I1 . Heterojunction Laser Characteristics . . . . . . . . . . . . . 4
111 . Temperature Dependence of Threshold Current . . . . . . . . . . 1 2
IV . Gain-Guided Laser Structures . . . . . . . . . . . . . . . 25
V . Index-Guided Laser Structures . . . . . . . . . . . . . . . 3 3
References . . . . . . . . . . . . . . . . . . . . 57
Chapter 2 Mode-Stabilized Semiconductor Lasers for 0.7 .0. 8- and
1.1 .1. 6-pm Regions
N . Chinone and M . Nakamura
I . Introduction . . . . . . . . . . . . . . . . . . . . 61
I1 . Transverse-Mode Control . . . . . . . . . . . . . . . . 62
I11 . Longitudinal-Mode Control . . . . . . . . . . . . . . . 72
IV . Conclusion . . . . . . . . . . . . . . . . . . . . 88
References . . . . . . . . . . . . . . . . . . . . 89
Chapter 3 Semiconductor Lasers with Wavelengths Exceeding 2 pm
Yoshiji Horikoshi
I . Introduction . . . . . . . . . . . . . . . . . . . . 93
I1 . Semiconductor Materials . . . . . . . . . . . . . . . . 9 4
111 . Crystal Growth and Laser Fabrication . . . . . . . . . . . . . 10 3
IV . Laser-Diode Characteristics . . . . . . . . . . . . . . . . 12 0
References . . . . . . . . . . . . . . . . . . . . 147
V
vi CONTENTS
Chapter 4 The Functional Reliability of Semiconductor Lasers as
Optical Transmitters
B . A . Dean and M . Dixon
1. Introduction . . . . . . . . . . . . . . . . . . . . 153
I1. Experimental Conditions . . . . . . . . . . . . . . . . 15 6
Ill . Life-Test Results for a 45-Mbit/sec, AlGaAs System . . . . . . . . . 15 9
IV . Functional Life Testing for Improved Design . . . . . . . . . . . 17 0
V . Functional Reliability of an AlGaAs Laser Transmitter for Space
Communication. . . . . . . . . . . . . . . . . . . . 1 84
VI . Summary . . . . . . . . . . . . . . . . . . . . . 187
References . . . . . . . . . . . . . . . . . . . . 189
Chapter 5 Light-Emitting-Diode Device Design
R . H . Saul. Tien Pei Lee. and C. A . Burrus
I . Introduction . . . . . . . . . . . . . . . . . . . . 193
11 . LED Structures . . . . . . . . . . . . . . . . . . .19 4
111. LED Power and Modulation Bandwidth . . . . . . . . . . . .19 8
IV . LED Device Characteristics . . . . . . . . . . . . . . . . 21 1
V . Coupling of LEDs to Optical Fibers . . . . . . . . . . . . . 22 1
VI . Dual-Wavelength LEDs . . . . . . . . . . . . . . . . .23 2
VII . LEDs Made by MBE and VPE . . . . . . . . . . . . . . .23 3
VIII. Conclusions . . . . . . . . . . . . . . . . . . . . 234
References . . . . . . . . . . . . . . . . . . . . 235
Chapter 6 Light-Emitting-Diode Reliability
C. L . Zipfel
1 . Introduction . . . . . . . . . . . . . . . . . . . . 239
I1. LED Life Testing . . . . . . . . . . . . . . . . . .24 2
111 . GaAs/GaAlAs LEDs: ResultsofAccelerated Aging . . . . . . . . .24 3
IV . RapidDegradation Mechanismsin GaAs/GaAIAsLEDs . . . . . . . 24 9
V . Gradual Degradation in GaAs/GaAIAs LEDs . . . . . . . . . . 26 0
V1 . InP/InGaAsPLEDs: ResultsofAccelerated Aging . . . . . . . . .26 4
.
VII Degradation Mechanisms in InP/InGaAsP LEDs . . . . . . . . . 26 8
VIII . Conclusions . . . . . . . . . . . . . . . . . . . . 275
References . . . . . . . . . . . . . . . . . . . . 276
CONTENTS vii
Chapter 7 Light-Emitting-Diode-Based Multimode Lightwave
Systems
Tien Pei Lee and Tingjie Li
1. Introduction . . . . . . . . . . . . . . . . . . . . 281
I1 . Multimode-Fiber Properties . . . . . . . . . . 4 . . . . 28 2
111 . System Considerations . . . . . . . . . . . . . . . . . 2 86
IV . System Experiments and Field Trials . . . . . . . . . . . . .29 2
V . Conclusions . . . . . . . . . . . . . . . . . . . . 296
References . . . . . . . . . . . . . . . . . . . . 297
Chapter 8 Semiconductor Laser Noise: Mode Partition Noise
Kinichiro Ogawa
1. Introduction . . . . . . . . . . . . . . . . . . . . 299
11 . A Simple Model of Mode Partition Noise . . . . . . . . . . . .30 0
111 . Analysis of Mode Partition Noise . . . . . . . . . . . . . .30 2
IV . Mode Partition Coefficient k Value . . . . . . . . . . . . .311
V . Theoretical k Value with and
without Interaction between Lasing Modes . . . . . . . . . . .315
V1 . Statistical Measurement ofMode Partition Noise . . . . . . . . .322
VII . Effects of Optical Injection Locking on Mode Partition Noise . . . . . . 32 4
Appendix 1 . . . . . . . . . . . . . . . . . . . . 328
Appendix I1 . . . . . . . . . . . . . . . . . . . . 329
References . . . . . . . . . . . . . . . . . . . . 330
INDEX. . . . . . . . . . . . . . . . . . . . . . . . 331
CONTENTS OF VOLUME 22 . . . . . . . . . . . . . . . . . .33 5
CONTENTOSF PREVIOUVSO LUMES . . . . . . . . . . . . . . . 33 7
This Page Intentionally Left Blank
List of Contributors
Numbers in parentheses indicate the pages on which the authors' contributions begin.
C. A. BURRUSA,T & T Bell Laboratories, Crawford Hill Laboratory, Holm-
del, New Jersey 07733 (19 3)
N. CHINONEC,e ntral Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
185, Japan (61)
B. A. DEANA, T&T Bell Laboratories, Allentown, Pennsylvania 18103 (1 53)
M. DIXONA, T&T Bell Laboratories, Allentown, Pennsylvania 18103 (1 53)
N. K. DUTTAA, T&T Bell Laboratories, Murray Hill, New Jersey 07974 (1)
Y 0s HIJ I HOR IK OS HI, Musash ino Electrical Cornmimicati on Laboratory,
Nippon Telegraph and Telephone Piiblic Corporation, Miisashino-shi,
Tokjv 180, Japan (93)
TIENP EIL EE,*A T& T Bell Laboratories, Crayford Hill Laboratory, Holm-
del, New Jersejl 07733 (193. 281)
TINGYLEI , A T&T Bell Laborarories, Crawford Hill Laboratory, Holmdel,
NeM1Jerse.y 07733 (281)
M, NAKAMURAC,e ntral ReAearch Laboratory, Hitachi Ltd., Kokubunji,
Tokyo 185, Japan (6 1)
R. J. NELSON,? A T&T Bell Laboratories, Murray Hill, New Jersey 07974 ( 1)
KINICHIROOG AWAA,T & T Bell Laboratories, Holmdel, New Jersey 07733
(299)
R. H. SAULA, T&T Bell Laboratories, Murray Hill, New Jersey 07974 (193)
C. L. ZIPFELA, T&TBellLaboratories, Murray Hill, NewJerseyO7974(239)
* Present address: Bell Communications Research, Munay Hill. New Jersey 07974.
t Present address: Lytel, Inc., Somerville. New Jersey 08876.
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