Lead Chalcogenides: Physics and Applications

712 Pages·2021·24.405 MB·English

by  D. Khokhlov

Lead Chalcogenides:
Physics & Applications
OptoelectronicPropertiesofSemiconductorsand
SuperLattices
ASerieseditedbyM.O.Manasreh,DepartmentofElectricalandComputer
Engineering,UniversityofNewMexico,Albuquerque,USA
Volume1 LongWavelengthInfraredDetectors
EditedbyManijehRazeghi
Volume2 GaNandRelatedMaterials
EditedbyStephenJ.Pearton
Volume3 Antimonide-RelatedStrained-LayerHeterostructures
EditedbyM.O.Manasreh
Volume4 Strained-LayerQuantumWellsandTheirApplications
EditedbyM.O.Manasreh
Volume5 StructuralandOpticalPropertiesof
PorousSiliconNanostructures
EditedbyG.Amato,C.DelerueandH.-J.vonBardeleben
Volume6 LongWavelengthInfraredEmittersBasedon
QuantumWellsandSuperlattices
EditedbyManfredHelm
Volume7 GaNandRelatedMaterialsII
EditedbyStephenJ.Pearton
Volume8 SemiconductorQuantumWellsIntermixing
EditedbyE.HerbertLi
Volume9 InPandRelatedCompounds:
Materials,ApplicationsandDevices
EditedbyM.O.Manasreh
Volume10 Vertical-CavitySurface-EmittingLasers:
TechnologyandApplications
EditedbyJ.ChengandN.K.Dutta
Volume11 DefectsinOptoelectronicMaterials
EditedbyK.WadaandS.W.Pang
Volume12 II-VISemiconductorMaterials
EditedbyMariaC.Tamargo
Volume13 III-NitrideSemiconductors:OpticalPropertiesI
EditedbyM.O.ManasrehandH.X.Jiang
Volume14 III-NitrideSemiconductors:OpticalPropertiesII
EditedbyM.O.ManasrehandH.X.Jiang
Volume15 Silicon-GermaniumCarbonAlloy
EditedbyS.T.PantelidesandS.Zollner
Volume16 III-VNitrideSemiconductors:Applications&Devices
EditedbyE.T.YuandM.O.Manasreh
Volume17 MicroprobeCharacterizationofOptoelectronicMaterials
EditedbyJ.Jiménez
Volume18 LeadChalcogenides:Physics&Applications
EditedbyD.Khokhlov
Lead Chalcogenides:
Physics & Applications
Editedby
Dmitriy Khokhlov
NewYork • London
DeniseT.Schanck,VicePresident
RobertH.Bedford,Editor
LilianaSegura,EditorialAssistant
ThomasHastings,MarketingManager
MariaCorpuz,MarketingAssistant
DennisP.Teston,ProductionDirector
AnthonyManciniJr.,ProductionManager
BrandyMui,STMProductionEditor
Publishedin2003by
Taylor&Francis
29West35thStreet
NewYork,NY10001
PublishedinGreatBritainby
Taylor&Francis
11NewFetterLane
LondonEC4P4EE
Copyright©2003byTaylor&Francis.
PrintedintheUnitedStatesofAmericaonacid-freepaper.
Allrightsreserved.Nopartofthisbookmaybereprintedorreproducedorutilizedinany
formorbyanyelectronic,mechanical,orothermeans,nowknownorhereafterinvented,
includingphotocopyingandrecording,orinanyinformationstorageorretrievalsystem,
withoutpermissioninwritingfromthepublisher.
10 9 8 7 6 5 4 3 2 1
LibraryofCongressCataloging-in-PublicationData
Leadchalcogenides:physicsandapplications/editedbyDmitriyKhokhlov.
p.cm.—(Optoelectronicpropertiesofsemiconductorsandsuperlattices;18)
Includesindex.
ISBN1-56032-916-5
1.Leadchalcogenides.2.Semiconductors.I.Khokhlov,Dmitriy.II.Series.
QC611.8.L4L432002
537.6(cid:1)22—dc21
2002020251
CONTENTS
AbouttheSeries vii
Preface ix
PartI BasicPhysicalFeaturesoftheLeadChalcogenides 1
1 LeadChalcogenides:BasicPhysicalFeatures 3
Y.I.Ravich
PartII SynthesisoftheLeadChalcogenides 35
2 PhaseDiagramsandGrowthofBulkLeadChalcogenideCrystals 37
V.ZlomanovandL.Yashina
3 MolecularBeamEpitaxyofIV-VIHeterostructuresand
Superlattices 123
G.Springholz
PartIII PhysicsoftheLeadChalcogenides 209
4 OpticalPropertiesandLow-DimensionalSystemsof
IV-VISemiconductors 211
H.PascherandG.Bauer
5 LeadTelluriden-i-p-iStructures:AnElectronicSysteminthe
IntermediateRegimeBetweenTwoandThreeDimensions 299
J.Oswald
6 SemimagneticSemiconductorsBasedonLeadChalcogenides 385
T.Story
7 DopedLeadChalcogenides 427
L.RyabovaandB.Akimov
8 BandStructureandImpurityStatesintheLeadChalcogenides 483
B.Volkov
vi CONTENTS
PartIV ApplicationsoftheLeadChalcogenides 531
9 LaserApplicationsofIV-VISemiconductors 533
A.IshidaandH.Fujiyasu
10 ApplicationofLeadChalcogenidesinThermoelectricDevices 555
Z.Dashevsky
11 LeadChalcogenideInfraredDetectorsGrownon
SiliconSubstrates 587
H.Zogg
12 InfraredPhotodetectorsBasedonDopedLeadTellurides 617
D.Khokhlov
Index 643
ABOUT THE SERIES
The series Optoelectronic Properties of Semiconductors and Superlattices
providesaforumforthelatestresearchinoptoelectronicpropertiesofsemi-
conductor quantum wells, superlattices, and related materials. It features
a balance between original theoretical and experimental research in basic
physics,devicephysics,novelmaterialsandquantumstructures,processing,
andsystems—bearinginmindthetransformationofresearchintoproducts
and services related to dual-use applications. The following sub-fields, as
wellasothersatthecuttingedgeofresearchinthisfield,willbeaddressed:
long wavelength infrared detectors, photodetectors (MWIR–visible–UV),
infrared sources, vertical cavity surface-emitting lasers, wide-band gap
materials (including blue-green lasers and LEDs), narrow-band gap mate-
rials and structures, low-dimensional systems in semiconductors, strained
quantumwellsandsuperlattices,ultrahigh-speedoptoelectronics,andnovel
materialsanddevices.
Themainobjectiveofthisbookseriesistoprovidereaderswithabasic
understanding of new developments in recent research on optoelectronic
propertiesofsemiconductorquantumwellsandsuperlattices.Thevolumes
in this series are written for advanced graduate students majoring in solid
state physics, electrical engineering, and materials science and engineer-
ing,aswellasresearchersinvolvedinthefieldofsemiconductormaterials,
growth,processing,anddevices.

PREFACE
Challenges of the modern life, such as development of more reliable
and more fast ground and space – based communication systems, pollu-
tion control and monitoring, reliable weather forecast and many others –
provide enhanced requirements to performance of optoelectronic devices
used in these systems. This task stimulates intensive fundamental and
applied research in the field leading to new exciting results in semicon-
ductoroptoelectronics, suchasdevelopmentofquantumcascadelasersor
multi-quantumwellphotodetectors.
Thespectraloperationrangeofanoptoelectronicdeviceisdefinedbythe
energyparametersofasemiconductorusedinthisdevice:bandgap,impurity
gap,bandalignmentinheterostructures,superlatticesandquantumdots,and
others.TheIII-Vsemiconductorstructuresthataremostcommonlyusedin
themoderninfraredoptoelectronicsbecauseoftheirexcellentlydeveloped
technologyofgrowth,operate,asarule,inthenear-andmid-infraredspec-
tral range. Longer operating wavelengths require semiconductor materials
withsmallerbandgap,suchasleadchalcogenides.
Lead chalcogenides are one of the main base materials of the infrared
optoelectronics.TheyarecharacterizedbysmallbandgapE ∼0.2eVthat
g
is considerably smaller than even in InSb – the III-V semiconductor with
thesmallestgap.Moreover,thevalueofE maybeeasilytunedevendown
g
tozerobymeansofalloying.Compositiondependenceofthegapisnottoo
strong, so it is possible to obtain a quite homogeneous semiconductor for
any given spectral range. In the IV-VI semiconductors the effective mass
of free carriers is very small (down to 0.01m ), and the static dielectric
0
constantisextremelyhigh(upto103–104atlowtemperatures)resultingin
effectivescreeningofchargedimpurities.Therefore,despitehighnumberof
growthdefectsappearinginIV-VI,mobilitiesoffreecarriersareveryhigh
(upto106cm2/V·satlowtemperatures),thatisveryimportantformostof
applications.Theenergygapisdirectprovidinghighradiativerecombination
output,andsemiconductorlasersbasedonIV-VIareoneofthebestforthe
far-infraredspectralrange.
ThehistoryofresearchontheIV-VIsemiconductorsgoesuptothemid-
dle of 19-th century when the thermoelectric effect has been observed in
the lead sulfide. One of the first sensitive photonic infrared photodetector
basedonPbSwasdemonstratedinthebeginningofthe20-thcentury.The
appliedresearchonIV-VIbecamequiteintensivein40-ths,whenthelead
sulfide photodetectors were used for military applications. First operation