Introduction to Semiconductor Devices: For Computing and Telecommunications Applications

334 Pages·2005·3.164 MB·English

by  Kevin F. Brennan

Introduction to Semiconductor Devices
ForComputingandTelecommunicationsApplications
From semiconductor fundamentals to state-of-the-art semiconductor devices
usedinthetelecommunicationsandcomputingindustries,thisbookprovides
a solid grounding in the most important devices used in the hottest areas of
electronicengineeringtoday.Thebookincludescoverageoffutureapproaches
tocomputinghardwareandRFpoweramplifiers,andexplainshowemerging
trends and system demands of computing and telecommunications systems
influencethechoice,design,andoperationofsemiconductordevices.
The book begins with a discussion of the fundamental properties of semi-
conductors.Next,state-of-the-artfieldeffectdevicesaredescribed,including
MODFETsandMOSFETs.Shortchanneleffectsandthechallengesfacedby
continuingminiaturizationarethenaddressed.Therestofthebookdiscusses
thestructure,behavior,andoperatingrequirementsofsemiconductordevices
usedinlightwaveandwirelesstelecommunicationssystems.
This is both an excellent senior/graduate text, and a valuable reference for
engineersandresearchersinthefield.
Kevin Brennan (1956–2003) was the recipient of a National Science Foun-
dationPresidentialYoungInvestigatorAward.HewasnamedSchoolofECE
DistinguishedProfessoratGeorgiaTechin2002,andawardedaspecialcom-
mendationfromtheViceProvostforResearchinrecognitionofhiscontributions
tograduate-leveleducationin2002.In2003,hereceivedthehighesthonorthat
aGeorgiaTechfacultymembercanattain:theClassof1934DistinguishedPro-
fessorAward.HealsoservedasanIEEEElectronDeviceSocietyDistinguished
Lecturer.

Introduction to
Semiconductor Devices
For Computing and
Telecommunications Applications
KEVIN F. BRENNAN
CAMBRIDGE UNIVERSITY PRESS
Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore,
São Paulo, Delhi, Dubai, Tokyo, Mexico City
Cambridge University Press
The Edinburgh Building, Cambridge CB2 8RU, UK
Published in the United States of America by Cambridge University Press, New York
www.cambridge.org
Information on this title: www.cambridge.org/9780521153614
© Cambridge University Press 2005
This publication is in copyright. Subject to statutory exception
and to the provisions of relevant collective licensing agreements,
no reproduction of any part may take place without the written
permission of Cambridge University Press.
First published 2005
Reprinted 2006
First paperback printing 2010
A catalogue record for this publication is available from the British Library
ISBN 978-0-521-83150-5 Hardback
ISBN 978-0-521-15361-4 Paperback
Cambridge University Press has no responsibility for the persistence or
accuracy of URLs for external or third-party Internet Web sites referred to in
this publication, and does not guarantee that any content on such Web sites is,
or will remain, accurate or appropriate.
To my family, Lea, Casper, and Jack

Contents
Preface pagexi
Listofphysicalconstants xv
Listofmaterialsparametersforimportantsemiconductors,
SiandGaAs xvi
1 Semiconductorfundamentals 1
1.1 Definitionofasemiconductor 2
1.2 Equilibriumcarrierconcentrationsandintrinsicmaterial 7
1.3 Extrinsicmaterial 16
Problems 21
2 Carrieraction 23
2.1 Driftanddiffusion 23
2.2 Generation–recombination 28
2.3 Continuityequationanditssolution 33
Problems 36
3 Junctions 38
3.1 p–nhomojunctioninequilibrium 38
3.2 p–nhomojunctionsunderbias 47
3.3 Deviationsfromidealdiodebehavior 57
3.4 Carrierinjection,extraction,chargecontrolanalysis,
andcapacitance 61
3.5 Schottkybarriers 68
Problems 75
4 Bipolarjunctiontransistors 78
4.1 BJToperation 78
4.2 SecondaryeffectsinBJTs 92
4.2.1 Driftinthebaseregion 92
4.2.2 BasenarrowingortheEarlyEffect 94
4.2.3 Avalanchebreakdown 95
4.3 HighfrequencyoperationofaBJT 97
Problems 99
viii Contents
5 JFETsandMESFETs 101
5.1 JFEToperation 101
5.2 MESFETandMODFEToperation 104
5.3 QuantitativedescriptionofJFETsandMESFETs 112
5.4 SmallsignalmodelforaJFET 121
Problems 124
6 Metal–insulator–semiconductorstructures
andMOSFETs 127
6.1 MISsystemsinequilibrium 127
6.2 MISsystemsunderbias 133
6.3 BasictheoryofMOSFEToperation 144
6.4 SmallsignaloperationofMESFETsandMOSFETs 155
6.5 CMOScircuits 160
Problems 165
7 Short-channeleffectsandchallengestoCMOS 169
7.1 Short-channeleffects 169
7.2 Scalingtheory 176
7.3 ProcessingchallengestofurtherCMOSminiaturization 183
Problems 186
8 BeyondCMOS 188
8.1 EvolutionaryadvancesbeyondCMOS 188
8.2 Carbonnanotubes 195
8.3 Conventionalvs.tactilecomputing,molecularand
biologicalcomputing 197
8.4 Moletronics–moleculardiodesanddiode–diodelogic 201
8.5 Defecttolerantcomputing 206
8.6 Quantumdotcellularautomata 210
Problems 219
9 Telecommunicationssystems–anoverview 220
9.1 Fibertransmission 220
9.2 Amplifiersandrepeaters 223
9.3 Mobilecellulartelecommunicationssystems 225
9.4 Devicetypesforcellularsystems 228
10 Optoelectronicdevices–emitters,lightamplifiers,and
detectors 230
10.1 LEDs 230
10.2 Stimulatedemission 238
10.3 Laseroperation 244
Contents ix
10.4 Typesofsemiconductorlasers 248
10.5 EDFAs 255
10.6 SOAs 258
10.7 p–i–nphotodetectors 260
10.8 Avalanchephotodiodes 265
Problems 273
11 Transistorsforhighfrequency,highpower
amplifiersforwirelesssystems 275
11.1 Transistorfiguresofmeritforwirelesssystems 275
11.2 Heterostructures 281
11.3 MODFETdevices 286
11.4 HBTs 290
11.5 Widebandgapsemiconductors 294
Problems 298
References 300
Index 303