Industrial Ion Sources: Broadbeam Gridless Ion Source Technology

317 Pages·2011·4.248 MB·English

by  Prof. Viacheslav V. Zhurin(auth.)

Viacheslav V. Zhurin
Industrial Ion Sources
Related Titles
Guest, G. Brown,I. G.(ed.)
Electron Cyclotron Heating The Physics and Technology
of Plasmas of Ion Sources
264pageswithapprox.40figures 444pages
2009 1989
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ISBN:978-3-527-40916-7 ISBN:978-0-471-85708-2
Viacheslav V. Zhurin
Industrial Ion Sources
Broadbeam Gridless Ion Source Technology
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V
Contents
Preface XI
1 Hall-CurrentIonSources 1
1.1 Introduction 1
1.2 ClosedDriftIonSources 2
1.3 End-HallIonSources 5
1.4 ElectricDischargeandIonBeamVolt–AmpereCharacteristics 19
1.5 OperatingParametersCharacterizingIonSource 24
References 26
2 IonSourceandVacuumChamber.Influenceof VariousEffects
onIonBeamParameters 29
2.1 Introduction 29
2.2 MassEntrainment 32
2.3 Charge-ExchangeInfluenceonIonBeamFlow 34
2.4 DoublyIonizedParticlesandTheirRole 36
2.5 InfluenceofVacuumChamberPumpingRate 40
2.6 DielectricDepositionsonanAnodeDuringOperation
withReactiveGases 41
2.7 EstimationofReturnedSputteredParticlestoIonSource 43
2.8 InfluenceofIonSourceHeatingonitsOperation 47
2.9 NegativeIonsandtheirRole 48
2.10 Conclusion 50
References 50
3 OscillationsandInstabilitiesinHall-CurrentIonSources 53
3.1 Introduction 53
3.2 OscillationsandInstabilities 56
3.3 TypesofOscillations 56
3.3.1 IonizationOscillations 56
3.3.2 FlightOscillations 58
3.3.3 ContourOscillations 58
VI Contents
3.3.4 HybridAzimuthalOscillations 60
3.3.5 OscillationsDuetoHighPressure 61
3.3.6 OscillationsDuetoIonBeamUnderneutralization 61
3.3.7 OscillationsDuetoIncorrectOperation 62
3.3.8 OscillationsDuetoPresenceofWaterVapors 62
3.4 ConclusionsandWhattoDoAboutOscillations 63
References 64
4 OptimumOperationofHall-CurrentIonSources 67
4.1 Introduction 67
4.2 RegimeofNonself-SustainedDischargeandOptimumOperation
ConditionsofEnd-HallIonSource 70
4.2.1 DischargeVolt–AmpereCharacteristics 70
4.3 OperationofEnd-HallIonSourcewithExcessive
ElectronEmission 71
4.4 IonBeamEnergyofEnd-HallIonSource 73
4.5 End-HallIonSourceOptimumMagneticFieldforIonBeam
Current 76
4.6 IonBeamEnergyDistributionasaFunctionofAngle
WithVariousEmissionCurrents 81
4.7 Conclusion 82
References 83
5 CathodeNeutralizersforIonSources 85
5.1 Introduction 85
5.2 IonBeamanditsPracticalNeutralization 87
5.3 HotFilamentElectronSourceandThermoelectronEmission 93
5.3.1 Richardson–DushmanFormulaforThermoelectron
EmissionCurrentDensity 93
5.3.2 RecentImprovementsinHFDesign 101
5.4 HollowCathodes 105
5.4.1 Introduction 105
5.4.2 HollowCathodePhysics 109
5.4.3 HollowCathodesforIndustrialIonSources 115
5.4.4 HCModesofOperation 121
5.4.5 HollowCathodeTipandKeeper 123
5.4.6 GeneralConclusionsaboutHollowCathodes 125
5.4.7 OtherCathodesforIonSources 126
5.4.7.1 PlasmaBridge 126
5.4.7.2 NeutralizerwithClosedElectronDrift 128
5.4.7.3 Radio-FrequencyNeutralizers 129
5.4.7.4 ColdCathodes 134
5.4.7.5 NeutralizationwithAlternatingCurrent 135
5.4.7.6 PlasmaBridgeBasedonMagnetronDischargePrinciples 136
5.4.7.7 IonBeamNeutralizationwithMagnetronElectrons 139
Contents VII
5.4.7.8 IonBeamNeutralizationwithElectronGun 140
5.4.7.9 MicrowaveDischargeNeutralizer 141
5.4.8 CathodeErosionRates 141
5.4.9 ImportantFeaturesofCathodeNeutralizers 142
5.5 ConclusionsaboutCathodeNeutralizers 142
Appendix5.A:WebAddresses 144
References 144
6 IndustrialGridlessBroad-BeamIonSourceProducers,Problems
andtheNeedforTheirStandardization 149
6.1 WorldProducersofIonSources 149
6.1.1 TheoreticalConsiderationforClosedElectron
DriftDesign 154
6.2 SpecificDesignsofEnd-Hall-CurrentIonSourcesforThinFilm
Technology 159
6.3 NontraditionalBroadBeamIonSources 168
6.4 LinearIonSources 178
6.5 Hall-CurrentIonSourcesBasicOperationParameter
Problems 183
6.6 TheNeedforStandardizationofIonSources 190
6.7 Conclusions 194
Appendix6.A:WebAddresses 194
References 195
7 OperationofIndustrialIonSourceswithReactiveGases 197
7.1 Introduction 197
7.2 Low-andHigh-TemperatureOxidation 198
7.3 IonSourceOperationwithDielectricandInsulatingDepositions
onanAnode 199
7.4 End-HallwithGroovedAnodeandBaffle 203
7.5 End-HallWithHiddenAnodeAreaforContinuingDischarge
Operation 205
7.6 PracticalOperationofHall-CurrentIonSourceswith
ReactiveGases 206
References 208
8 IonBeamandRadiationImpactonSubstrateHeating 209
8.1 Introduction 209
8.2 Target-SubstrateHeatingByRadiationandIonBeam 211
8.3 ExperimentalMeasurementsofIonBeamandRadiationImpact
onaTarget-Substrate 218
8.4 Conclusion 222
AppendixA.8:WebAddresses 222
References 222
VIII Contents
9 IonBeamEnergyandCurrent 223
9.1 Introduction 223
9.2 IonBeamEnergyDistribution 225
9.3 RetardingPotentialProbes 228
References 240
10 PlasmaOpticalSystems 241
10.1 Introduction 241
10.2 PlasmaOpticsEvolution 242
10.3 ElectrostaticFieldsinPlasma 243
10.4 PlasmaOpticalSystemswithEquipotential
MagneticFieldLines 244
10.5 PlasmaLenses 245
10.6 PracticalApplicationsofPlasmaOpticalSystems
inTechnology 248
10.6.1 IonBeamFocusingandDefocusingwithPlasmaLens 248
10.6.2 IonBeamSolderingwithFocusedorPartiallyFocused
IonBeam 249
References 254
11 IonandPlasmaSourcesforScienceandTechnology 255
11.1 Introduction 255
11.2 VacuumPump 255
11.3 CommutatingPropertiesofGasDischargeinMagneticField 256
11.3.1 PlasmaSwitch 257
11.4 HollowCathodeasVacuumValve 258
11.5 IonSourceforLevitation 260
11.6 HydrogenMotionthroughMetalMembraneforMPD
PlasmaSource 261
11.7 PlasmaopticalMassSeparator 262
11.8 PlasmaStealthandOtherEffectsinModernAirdynamics 263
11.9 Conclusion 266
References 266
12 IonAssist,andItsDifferentApplications 269
12.1 Introduction 269
12.2 IonBeamSputtering 270
12.3 IonAssistedDeposition 272
12.4 BiasedTargetDeposition 278
12.5 IonAssistedMagnetronDepositionwithMagnetronElectrons
forIonBeamNeutralization 280
12.5.1 IonAffluxandIonAssist 281
12.6 IonAssistedMagnetronDischargeforEnhancementofCathode
Sputtering 283
12.6.1 MagnetronDischargewithIonBeamAssist 283
Contents IX
12.7 Conclusion 285
References 285
13 MagnetronwithNon-equipotentialCathode 287
13.1 Introduction 287
13.2 ShortHistoryofMagnetronDevelopment 288
13.3 MagnetronwithSegmentsatDifferentPotentials 292
13.4 ThePhenomenologyofaMagnetronDischargewithNEC 304
13.5 Conclusion 306
References 307
Index 309
Preface XI
Preface
The ion source, according to general definition, is a device for obtaining directed
flowsofions.Ionsourcesare utilizedasacceleratorsofchargedparticlesforthin
film technology, mass separators, plasma current switches, plasma accelerators,
vacuumpumps,andmanyotherdevices.
The main application of ion sources described in this book is for material
processing: cleaning, etching various targets and surfaces, assisting in deposition
of thin films on substrates, and obtaining new combinations of materials that, in
somecases,canonlybedonewithionbeams.
IndustrialbroadbeamHall-currentionsources,orindustrialionsources,willbe
describedanddiscussedindetailinthisbook.Theseparticulartypesofionsources
arewidelyutilizedforvarioustechnologiesattheindustriallevel.Manycompanies
usetheseionsources5to7daysaweek,24hoursaday,withoutmajorinterruptions.
Interruptionsaremainlycausedbyopeningvacuumchambersinwhichionsources
are placed or removing processed parts, introducing new portions of parts for
processing by ion beams of ion sources, or for technical repair or substitution of
ionsources,theirparts,targets,substrates,andsoon.Somecompanieshavelarge
numbers of ion sources (up to 30 to 50 devices) and, as a rule, do not make any
changesinthedesigns,magneticfields,emissioncurrents,andsoon.
Researchanddevelopment(R&D)laboratoriesinsmallandlargecompanies,and
inmanytechnicaluniversities,utilizeafewionsourcesfornumerousphysicaland
technicaltasksorobtainingvariousmaterialswithneworimprovedpropertiesof
knownmaterials.Universitiesandsmallcompaniescanintroducesomechangesin
design and operation procedures, which can change the main parameters of ion
sources.
Thepurposeofthisbookistoofferassistanceandsupporttotheusersaswellas
the designers and developers of industrial ion sources. Many developers are still
tryingtoimprovetheperformanceofexistingionsourceswithbroaderoperational
parameters, with a certain specific range of parameters, or with non-traditional
workinggases.
Theauthorwillprovidethedatanecessaryforeverydayworkwithionsources,and
will offer advice on how to obtain certain features and how such features can be
estimatedthataretrueortowhatextenttheyaretrue,inordertoprovidethebest
possibleresultsinmaterialprocessingwithionsources.Adetaileddescriptionofthe