III-V Ternary Semiconducting Compounds-Data Tables

60 Pages·1972·1.016 MB·English

by  M. Neuberger (auth.)

HANDBOOK OF ELECTRONIC MATERIALS
Volume 7
HANDBOOK OF ELECTRONIC MATERIALS
Compiled by :
ELECTRONIC PROPERTIES INFORMATION CENTER
Hughes Aircraft Company
Culver City, California
Sponsored by:
u.s.
DEFENSE SUPPLY AGENCY
Defense Electronics Supply Center
Dayton, Ohio
Volume 1:
OPTICAL MATERIALS PROPERTIES, 1971
Volume 2:
III-V SEMICONDUCTING COMPOUNDS, 1971
Volume 8:
SILICON NITRIDE FOR MICROELECTRONIC APPLICATIONS, PART I:
PREPARATION AND PROPERTIES, 1971
Volume .. :
NIOBIUM ALLOYS AND COMPOUNDS, 1972
Volume 5:
GROUP IV SEMICONDUCTING COMPOUNDS, 1971
Volume 6:
SILICON NITRIDE FOR MICROELECTRONIC APPLICATIONS, PART II:
APPLICATIONS AND DEVICES, 1972
Volume 7:
III-V TERNARY SEMICONDUCTING COMPOUNDS-DATA TABLES, 1972
HANDBOOK OF ELECTRONIC MATERIALS
Volume 7
III- V Ternary Semiconducting
Compounds-Data Tables
M. Neuberger
Electronic Properties InforrruLtion Center
Hughes Aircraft Company, Culver City, California
IFI/PLENUM· NEW YORK-WASHINGTON-LONDON ·1972
This document has been approved for public release and sale;
its distribution is unlimited. Sponsored by U.S. Defense Supply
Agency, Defense Electronics Supply Center, Dayton, Ohio.
Under Contract No. DSA 900-72-C-1182
Libr·ary of Congress Catalog Card Number 76-147312
ISBN 978-1-4684-6167-1 ISBN 978-1-4684-6165-7 (eBook)
DOl 10.1007/978-1-4684-6165-7
©1972 IFI/Plenum Data Corporation, a Subsidiary of
Soft cover reprint of the hardcover 1st edition 1972
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All Rights Reserved
No part of this publication may be reproduced in any form
without written permission from the Publisher
CONTENTS
Page
INTRODUCTION •••••••••••••••••.••••••••••••••••••••• " •••••••••• " •• 1
GALLIUM-ALUMINUM-ANTIMONY SySTEM........................ •••.••.•.. 5
Bibliography. • . • • • • • • • • • • • . • . • . • • • • • . • . • • • • • • • . • • • • • . . . • . • • . • • . 7
GALLIUM-ALUMINUM-ARSENIC SySTEM.................................... 8
Bibliography. . • . • . • . • . • . • . • . • . • . • . • • • . • . • • • . • • • • • . • . . . • . • • • • • •. 11
GALLIUM-ALUMINUM-PHOSPHOROUS SySTEM .•.•.•.•.•.•.•.•.•.•.•.•........ 13
Bibliography. . . • . • . • . • • • . • • • • • . • • • • • • • • • . • . • . • . • . • . • . • . • . • . • . •. 14
GALLIUM-ARSENIC-ANTIMONY SySTEM.................................... 15
Bibliography. . • . • . • . • . • . • • • • • • • . • • • • • . • . • • • . • • • • • . • . • . • . • . • . . .• 18
GALLIUM-ARSENIC-PHOSPHOROUS SySTEM................................. 19
Bibliography. • • • • • . • . • . • • • . • . • . • • • . • • • • • . • • • . • . • • • • • • • • • . • . • . •. 25
GALLIUM-INDIUM-ANTIMONY SySTEM..................................... 28
Bibliography •.•.•.•.•••••.•.•••••.•.•.•••.•••.•••.•.•.•••.•.•.. 33
GALLIUM-INDIUM-ARSENIC SySTEM...................................... 35
Bibliography. • • • • • • • • • . • • • • • • • • • . • . • • • . • . • . • .• . • . • • • •• . • • • . • . •. 39
GALLIUM-INDIUM-PHOSPHOROUS SySTEM ••.•.•.•.•.•••.•.•.•.•.•.•.•.•.•.• 41
Bibliography. • . • . • • • . • • • • • • • . • • • • • • • • • • • • • • • • • • • • • . • • • • • • • • • . •. 44
INDIUM-ARSENIC-ANTIMONY SySTEM..................................... 46
Bibliography. . • . • • • • • . • • • • • • • • • • • • • . • • • • • • • • • • • • • • • • • . • . • . • . • .• 49
INDIUM-ARSENIC-PHOSPHOROUS SySTEM.................................. 51
Bibliography. • . • . • . • • • . • • • . • • • . • • • • • • • • • • • • • • • • • • • . • . • . • . • . • ••. 55
y
INTRODUCTION
The Electronic Prope~ties Information Cente~ has developed the Data Table as a compilation of the
most ~eliable info~mation available fo~ the physical, c~ystallog~aphic, mechanical, thermal, elect~onic,
magnetic and optical p~ope~ties of a given mate~ial. Data Tables forme~ly se~ved as an int~oduction to
the g~aphic data compilations on the mate~ial published by the Elect~onic ~ope~ties Information Cente~,
EPIC, as Data Sheets. Although the Data Sheets we~e p~incipally concerned, according to the scope of the
Cente~, with electronic and optical data, it is believed that data cove~ing the complete p~ope~ty spect~um,
is of the f~st impo~tance to eve~y scientist and engineer, whateve~ his information requi~ements. The
enthusiastic ~eception of these Data Tables has confi~med this opinion and increasing requests fo~ this
highly selective type of information ~esulted in the publication of volume 2 in this se~ies, "III-V
Semiconducting Compounds" in 1971 and "G~oup IV Semiconducting Compounds", also in 1971. Recent inte~est
in the device applications of the te~n~y semiconducto~s, led to the compilation of these Data Tables on
the III-V Te~n~y Semiconducting Compounds.
The majo~ problem in this type of selective data compilation on a semiconducting mate~ial, lies in the
mate~ial specifications. Prope~ties may va~y so widely with doping, c~stallinity, defects, geometric forms
and the othe~ pa~amete~s of p~epa~ation, that any attempts at comparison normally fail. On this basis, we
have consistently attempted to give the p~epa~ation methods, ca~rier concent~ations, and physical form. At
the ve~y least, these data should be ~ep~oducible and this gives the data the~ principal validity. If such
values howeve~, a~e not available, then the next best data ~e ~eported, togethe~ with mate~ial specifications.
Values fo~ a ~ange of tempe~atu~es, wavelengths, f~equencies, pressu~es and field strengths (both
elect~ic and magnetic), ~e ~epo~ted whe~e available. Ou~ p~ima~ goal has been not to comp~ess, but to
select and p~esent a ~ounded and fully ~ep~esentative view of the specific mate~ial.
This comp~ehensive ~eview of each compound has been made possible by the extensive collection of
documents in the EPIC files; to date 50,000 technical journal articles and gove~nment ~epo~ts have been
acqui~ed by the Cente~. To compile these III-V Te~nary Semiconducting Compounds Data Tables, about 350 of
these documents, ~epo~ted on one o~ mo~e of the III-V Te~na~y Compounds, have been evaluated fo~ ~elevant data.
As fa~ as possible, the a~~angement of data has been standa~dized in a consistent order as follows:
PHYSICAL, MECHANICAL, THERMAL
~ope~ty Unit
Fo~mula
Molecul~ Weight
Density
Name
Mine~al Name
Colo~
H~dness Mohs, kg/mm2
Cleavage
Symmet~y
Space G~oup
Lattice Paramete~s
Melting Point
Sublimation Tempe~atu~e
Specific Heat cal/gOK
Debye Tempe~ature OK
The~mal Conductivity W/cmoK
The~mal Expansion Coefficient 10-6/oK
Elastic Coefficient
Compliance, s
Stiffness o~ Elastic Modulus, c
Property Unit
Shear Strength kg/cm2
Young's Modulus dynes/cm2
Poisson's Ratio
Sound Velocity cm/sec.
Compressibility (l/Bulk Modulus) cm2/dyne
ELECTRICAL. ELECTRONIC
Dielectric Constant
Static. EO
Optic E ..
Dissipation Factor. tg 0
Electrical Resistivity ohm-cm
Mobility cm2/V sec
Electron, \.In
Hole, \.Ip
Temperature Coefficient, TX
Lifetime, T sec.
Piezoelectric Coefficients C/N, C/m2, m/V
Piezoresistance Coefficients cm2/dyne
Elastoresistance Coefficients cm2/dyne
Effective Mass
Energy Levels eV
Temperature Coefficient, dE/dT eV/oK
-2
Pressure Coefficient, dE/dP eV/kg cm
Field Coefficient
Dilatation Coefficient
Deformation Potential eV
Photoelectric Threshold, ~ eV
Work Function, <p eV
Electron Affinity, ~ eV
Barrier Heights eV
Phonon Spectra meV
Seebeck Coefficient V/oK
Nernst-Ettingshausen Coefficient
Magnetic Susceptibility 10-7 cgs
g-Factor
OPTICAL
Transmission %
Refractive Index
Temperature Coefficient
Spectral Emissivity
Piezo-optic Coefficient
Elasto-optic Coefficient
Electro-optic Coefficient
Laser Properties
2
Changes in value with temperature and pressure are always given where available. The units have
been standardized as far as possible in the cgs system, except for piezoelectric coefficients which,
according to the usage in this country, are given in Coulombs/Newton; certain mechanical properties
data are given in psi.
The most highly valued aspect of this work is the fact that every individual data point is accompanied
by a reference citation. Many data compilations appear in the literature which contain little or no
documentation as to the data sources; this work allows the reader to refer to the original research paper
for additional information and in this way offers a representative bibliographic review of the III-V
compounds. Where two or more documents present the same data values, all are cited. The bibliography
which follows every set of tables is arranged alphabetically by author; more than one document by the same
author is distinguished by the letters A, B, C, etc. In order to keep each compound separately, many pages
have been left with a considerable amount of blank space. This should prove useful however, in furnishing
the reader with space for the addition of the latest information as it appears in the published literature.
In a few cases, citations are out of order because they were added in proof.
The importance of several of these ternary compounds in device applications, has suggested that various
device properties should be added to the compilation. Laser properties, Light-Emitting Diode properties
and electron emission devices (cold cathodes) are included.
Grateful acknowleagement is made to the careful review of these tables by Dr. Victor Rehn of the U.S.
Naval Ordnance Test Station, Michelson Laboratory at China Lake, California and Dr. Wolfgang Klein of the
U.S. Army Electronics Command, Night Vision Laboratory at Fort Belvoir, Virginia. All errors and omissions
however, are solely the responsibility of the author.
3
r,ALLIUM-ALUMINUM-ANTIMONY SYSTEM
PROPERTY SYMBOL VALUE UNIT NOTES TEMP. (OK) REFERENCES
Formula AlxGal_xSb
Symmetry cubic
Lattice Parameter x ao
0 6.094 GaSb Donnay
4 6.1007 single phase, zone cast Miller et a1.
55 6.1201 ingot
62 6.1200
74 6.1237
100 6.1355 InSb Giesecke &
Pfister
Knoop Hardness 50 335 kg/mm2 polycrystalline Miller et a1.
HSO 10-100 420-450 polycrystalline, homogeneity Burdiyan
increases with zone refining
Melting Point M.P. M.P.
o 712.1 °C GaSb Bednar &
Smirous
25 860 Miller et al.
50 955
75 1010
100 1080 A1Sb Glazov et al.
Energy Gap E Eg
g
o 0.70 GaSb 300 Cardona
optical meas.
4 0.74 optical meas. 300 Miller et al.
55 1. 38 single phase, zone cast
62 1.43 ingot n = 1-4xl017 cm-3
p
74 1.46
20 0.94 optical meas. on cast 300 Burdiyan &
40 1.16 ingot, np= 8.6xl017 to Kolomiets
50 1.24 2.8xl018 cm-3
80 1.49
100 2.218 (direct) A1Sb 300 Cardona
optical meas.
1. 62 (indirect) optical meas. 300 Oswald &
Schade
Energy Band Structure x El El+1I1 E2
o 0.7 2.05 2.7 4.2 eV GaSb 300 Kroitoru
20 2.1 2.8 4.2 reflectivity meas. on et a1.
40 2.5 2.85 4.2 polycrystalline alloy
50 2.5 2.85 4.25
60 2.6 2.9 4.3
100 1. 55 2.85 3.2 4.45 A1Sb
5
GALLIUM-ALUMINUM-ANTIMONY SYSTEM
PROPERTY SYMBOL VALUE UNIT NOTES TEMP. (OK) REFERENCES
Mobility )I x -)1-
4 357 cm:2/V see 300 Miller et a1.
55 264
62 264
74 264
20 75 n = 8.6-28xl017 300 Bu:rdiyan &
80 525 P Kolomiets
Electrical p
-p--
Resistivity
4 0.014 ohm-em 300 Miller et a1.
55 0.075
62 0.11
74 0.22
-x- -1-10-0K- -33-00-K 9000K
20 10-4 2xlO-4 1. 7xlO-3 OJ-em single phase, Burdiyan &
50 2xlO-3 10-3 10-:2 polyerystalline Kolomiets
80 7xlO-4 4xlO-4 3.0xlO-3
6