III-Nitride Based Light Emitting Diodes and Applications

497 Pages·2017·20.68 MB·English

by  Jung Han, Hiroshi Amano, Hadis Morkoç (eds.)

Topics in Applied Physics 133
Tae-Yeon Seong
Jung Han
Hiroshi Amano
Hadis Morkoç Editors
III-Nitride Based
Light Emitting
Diodes and
Applications
S econd Edition
Topics in Applied Physics
Volume 133
Series editors
Mildred S. Dresselhaus, Physics and Electrical Engineering, Massachusetts Institute
of Technology, Cambridge, MA, USA
Young Pak Lee, Radiology, Hanyang University Hospital, Seoul, Republic of
Korea
Paolo M. Ossi, NEMAS - WIBIDI Lab, Politecnico di Milano, Milano, Italy
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Tae-Yeon Seong ⋅ Jung Han
Hiroshi Amano ⋅ Hadis Morkoç
Editors
III-Nitride Based Light
Emitting Diodes
and Applications
Second Edition
123
Editors
Tae-Yeon Seong Hiroshi Amano
Department of Materials Science Department of Electrical Engineering
and Engineering and Computer Science
Korea University Nagoya University
Seoul Nagoya, Aichi
Korea (Republic of) Japan
Jung Han Hadis Morkoç
Department of Electrical Engineering Department of Electrical and Computer
Yale University Engineering
New Haven, CT Virginia Commonwealth University
USA Richmond, VA
USA
ISSN 0303-4216 ISSN 1437-0859 (electronic)
Topics in Applied Physics
ISBN 978-981-10-3754-2 ISBN 978-981-10-3755-9 (eBook)
DOI 10.1007/978-981-10-3755-9
Library of Congress Control Number: 2017932011
1st edition: © Springer Science+Business Media Dordrecht 2013
2nd edition: © Springer Nature Singapore Pte Ltd. 2017
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Contents
1 Progress and Prospect of Growth of Wide-Band-Gap Group
III Nitrides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Hiroshi Amano
2 Ultra-Efficient Solid-State Lighting: Likely Characteristics,
Economic Benefits, Technological Approaches . . . . . . . . . . . . . . . . . 11
Jeff Y. Tsao, Jonathan J. Wierer Jr., Lauren E.S. Rohwer,
Michael E. Coltrin, Mary H. Crawford, Jerry A. Simmons,
Po-Chieh Hung, Harry Saunders, Dmitry S. Sizov, Raj Bhat
and Chung-En Zah
3 LEDs Based on Heteroepitaxial GaN on Si Substrates . . . . . . . . . . . 29
Takashi Egawa and Osamu Oda
4 Epitaxial Growth of GaN on Patterned Sapphire Substrates . . . . . . 69
Kazuyuki Tadatomo
5 Growth and Optical Properties of GaN-Based
Non- and Semipolar LEDs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Michael Kneissl, Jens Raß, Lukas Schade and Ulrich T. Schwarz
6 Internal Quantum Efficiency in Light-Emitting Diodes . . . . . . . . . . 129
Elison Matioli and Claude Weisbuch
7 Internal Quantum Efficiency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Jong-In Shim
8 III-Nitride Tunnel Junctions and Their Applications . . . . . . . . . . . . 209
S. Rajan and T. Takeuchi
9 Green, Yellow, and Red LEDs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 239
Jongil Hwang, Rei Hashimoto and Shinji Saito
10 AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes . . . . . . . . . . . 267
Hideki Hirayama, Norihiko Kamata and Kenji Tsubaki
v
vi Contents
11 Ray Tracing for Light Extraction Efficiency (LEE) Modeling
in Nitride LEDs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 301
C. Lalau Keraly, L. Kuritzky, M. Cochet and Claude Weisbuch
12 Light Extraction of High-Efficient Light-Emitting Diodes . . . . . . . . 341
Ja-Yeon Kim, Tak Jeong, Sang Hern Lee, Hwa Sub Oh,
Hyung Jo Park, Sang-Mook Kim and Jong Hyeob Baek
13 Electrical Properties, Reliability Issues, and ESD Robustness
of InGaN-Based LEDs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363
M. Meneghini, G. Meneghesso and E. Zanoni
14 Phosphors and White LED Packaging. . . . . . . . . . . . . . . . . . . . . . . . 397
Rong-Jun Xie and Naoto Hirosaki
15 High-Voltage LEDs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 433
Wen-Yung Yeh, Hsi-Hsuan Yen, Kuang-Yu Tai and Pei-Ting Chou
16 Color Quality of White LEDs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 457
Yoshi Ohno
17 Emerging System Level Applications for LED Technology . . . . . . . 481
Robert F. Karlicek Jr.
Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493
Contributors
Hiroshi Amano Institute of Materials and Systems for Sustainability (IMaSS),
Nagoya University, Nagoya, Japan
Jong Hyeob Baek Korea Photonics Technology Institute, Gwangju, Republic of
Korea
Raj Bhat Corning Incorporated, One Science Center Drive, Corning, NY, USA
Pei-Ting Chou Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
M. Cochet Materials Department, University of California, Santa Barbara, USA
Michael E. Coltrin Sandia National Laboratories, Physical Chemical and Nano
Sciences Center, Albuquerque, NM, USA
Mary H. Crawford Sandia National Laboratories, Physical Chemical and Nano
Sciences Center, Albuquerque, NM, USA
Takashi Egawa Research Center for Nano-Device and System, Nagoya Institute
of Technology, Nagoya, Japan
Rei Hashimoto Corporate Manufacturing Engineering Center, Toshiba Corpora-
tion, Isogo-ku, Yokohama, Japan
Hideki Hirayama RIKEN, Wako, Saitama, Japan
Naoto Hirosaki National Institute for Materials Science (NIMS), Tsukuba, Japan
Po-Chieh Hung Technology Strategy Division, Corporate R&D Headquarters
Konica Minolta, Inc., Hachioji-shi, Tokyo, Japan
Jongil Hwang Corporate Research and Development Center, Toshiba Corpora-
tion, Saiwai-ku, Kawasaki, Japan
Tak Jeong Korea Photonics Technology Institute, Gwangju, Republic of Korea
Norihiko Kamata Saitama University, Sakura-ku, Saitama, Japan
vii
viii Contributors
Robert F. Karlicek Jr. Rensselaer Polytechnic Institute, New York, USA
Ja-Yeon Kim Korea Photonics Technology Institute, Gwangju, Republic of Korea
Sang-Mook Kim Korea Photonics Technology Institute, Gwangju, Republic of
Korea
Michael Kneissl Institute of Solid State Physics, Technische Universität Berlin,
Berlin, Germany; Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequen-
ztechnik, Berlin, Germany
L. Kuritzky Materials Department, University of California, Santa Barbara, USA
C. Lalau Keraly Materials Department, University of California, Santa Barbara,
USA; Department of Electrical Engineering, University of California at Berkeley,
Berkeley, USA
Sang Hern Lee Korea Photonics Technology Institute, Gwangju, Republic of
Korea
Elison Matioli Institute of Electrical Engineering, École Polytechnique Fédérale
de Lausanne, EPFL STI IEL POWERlab, Switzerland
G. Meneghesso University of Padova, Padua, Italy
M. Meneghini University of Padova, Padua, Italy
Osamu Oda Research Center for Nano-Device and System, Nagoya Institute of
Technology, Nagoya, Japan
Hwa Sub Oh Korea Photonics Technology Institute, Gwangju, Republic of Korea
Yoshi Ohno National Institute of Standards and Technology, Gaithersburg, USA
Hyung Jo Park Korea Photonics Technology Institute, Gwangju, Republic of
Korea
Jens Raß Institute of Solid State Physics, Technische Universität Berlin, Berlin,
Germany
S. Rajan The Ohio State University, Columbus, USA
Lauren E.S. Rohwer Physical Chemical and Nano Sciences Center, Sandia
National Laboratories, Albuquerque, NM, USA
Shinji Saito Corporate Manufacturing Engineering Center, Toshiba Corporation,
Isogo-ku, Yokohama, Japan
Harry Saunders Decision Processes Incorporated, Danville, CA, USA
Lukas Schade Department of Microsystems Engineering, University of Freiburg,
Freiburg, Germany
Contributors ix
Ulrich T. Schwarz Faculty of Natural Sciences, Chemnitz University of Tech-
nology, Chemnitz, Germany
Jong-In Shim Hanyang University, Seoul, Korea
Jerry A. Simmons Sandia National Laboratories, Physical Chemical and Nano
Sciences Center, Albuquerque, NM, USA
Dmitry S. Sizov Corning Incorporated, One Science Center Drive, Corning, NY,
USA
Kazuyuki Tadatomo Graduate School of Science and Engineering, Yamaguchi
University, Ube, Yamaguchi, Japan
Kuang-Yu Tai Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
T. Takeuchi Meijo University, Nagoya, Japan
Jeff Y. Tsao Sandia National Laboratories, Physical Chemical and Nano Sciences
Center, Albuquerque, NM, USA
Kenji Tsubaki Panasonic, Kadoma, Oaska, Japan
Claude Weisbuch Materials Department, University of California, Santa Barbara,
CA, USA; Laboratoire de Physique de la Matière Condensée, CNRS, Ecole
Polytechnique, Palaiseau, France
Jonathan J. Wierer Jr. Sandia National Laboratories, Physical Chemical and
Nano Sciences Center, Albuquerque, NM, USA
Rong-Jun Xie National Institute for Materials Science (NIMS), Tsukuba, Japan
Wen-Yung Yeh Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Hsi-Hsuan Yen Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Chung-En Zah Corning Incorporated, One Science Center Drive, Corning, NY,
USA
E. Zanoni University of Padova, Padua, Italy