High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

264 Pages·2020·36.83 MB·English

by  Niladri Pratap Maity (editor), Reshmi Maity (editor), Srimanta Baishya (editor)

HIGH-k GATE DIELECTRIC

MATERIALS

Applications with Advanced Metal Oxide
Semiconductor Field Effect Transistors
(MOSFETs)

HIGH-k GATE DIELECTRIC

MATERIALS

Applications with Advanced Metal Oxide
Semiconductor Field Effect Transistors
(MOSFETs)
Edited by
Niladri Pratap Maity, PhD

Reshmi Maity, PhD

Srimanta Baishya, PhD
First edition published [2021]
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Library and Archives Canada Cataloguing in Publication
Title: High-k gate dielectric materials : applications with advanced metal oxide semiconductor field effect transistors
(MOSFETs) / edited by Niladri Pratap Maity, PhD, Reshmi Maity, PhD, Srimanta Baishya, PhD.
Names: Maity, Niladri Pratap, editor. | Maity, Reshmi, editor. | Baishya, Srimanta, editor.
Description: Includes bibliographical references and index.
Identifiers: Canadiana (print) 20200220306 | Canadiana (ebook) 20200220462 | ISBN 9781771888431 (hardcover) |
ISBN 9780429325779 (ebook)
Subjects: LCSH: Gate array circuits—Materials. | LCSH: Metal oxide semiconductors—Materials. | LCSH: Dielectrics.
Classification: LCC TK7871.99.M44 H54 2020 | DDC 621.3815/2—dc23
Library of Congress Cataloging‑in‑Publication Data
Names: Maity, Niladri Pratap, editor. | Maity, Reshmi, editor. | Baishya, Srimanta, editor.
Title: High-k gate dielectric materials : applications with advanced metal oxide semiconductor field effect transistors
(MOSFETs) / edited by Niladri Pratap Maity, PhD, Reshmi Maity, PhD, Srimanta Baishya, PhD.
Description: 1st edition. | Palm Bay, Florida : Apple Academic Press, [2020] | Includes bibliographical references and
index. | Summary: “This volume explores and addresses the challenges of high-k gate dielectric materials, one of the
major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors
(ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of
microelectronic components (or Moore’s law). This book presents a broad review of SiO2 materials, including a brief
historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. Then it discusses the
transition of gate dielectrics with an EOT 1 nm and a selection of high-k materials. A review of the different deposition
techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and
interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also
covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents
an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI
technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working,
structure, and modeling. This timely volume addresses the challenges of high-k gate dielectric materials and will
prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials
in future IC technology. Key features: Discusses the state-of-the-art in high-k gate dielectric research for MOSFET in
the nanoelectronics regime Reviews high-k applications in advanced MOS transistor structures Considers CMOS IC
fabrication with high-k gate dielectric materials”-- Provided by publisher.
Identifiers: LCCN 2020015811 (print) | LCCN 2020015812 (ebook) | ISBN 9781771888431 (hardcover) |
ISBN 9780429325779 (ebook)
Subjects: LCSH: Dielectrics. | Gate array circuits. | Metal oxide semiconductor field-effect transistors.
Classification: LCC QC585 .H537 2020 (print) | LCC QC585 (ebook) | DDC 621.3815/2840284--dc23
LC record available at https://lccn.loc.gov/2020015811
LC ebook record available at https://lccn.loc.gov/2020015812
ISBN: 978-1-77188-843-1 (hbk)
ISBN: 978-0-42932-577-9 (ebk)
About the Editors
Niladri Pratap Maity, PhD, is an
Associate Professor in the Department
of Electronics and Communication
Engineering at Mizoram University
(a Central University), India. He is the
author of more than 120 journal articles
and conference papers. He has been
nominated for and selected as a Visiting
Scientist by the Department of Science
and Technology, Government of India.
He is a recipient of several best/excellent
paper awards. His research interests include VLSI design, MOS device
modeling, and MEMS. Dr. Maity received MSc degree in Electronics
from Sambalpur University, India, MTech degree in Electronics Design
and Technology from Tezpur University (A Central University), Tezpur,
India, and a PhD degree in Electronics and Communication Engineering
from the National Institute of Technology, Silchar, India.
Reshmi Maity, PhD, is an Associate
Professor in the Department of Elec­
tronics and Communication Engi­
neering, Mizoram University (a Central
University), Aizawl, India. Prior to
that, she was an Assistant Professor at
the JIS College of Engineering (West
Bengal University of Technology) at
Kolkata, India. She is the author of over
100 refereed publications. Her research
interests include nanoelectronics and
MEMS. She received her BTech and MTech degrees in Radio Physics
and Electronics from the University of Calcutta, Kolkata, India. She has
completed her PhD degree in Electronics and Communication Engineering
at the National Institute of Technology, Silchar, India.
vi About the Editors
Srimanta Baishya, PhD, is a Professor
in the Department of Electronics and
Communication Engineering of the
National Institute of Technology Silchar,
India. Prior to that, he was an Assistant
Professor in the Department of Electronics
and Telecommunication Engineering of
the same college. He was also with the
Department of Electrical Engineering
as a Lecturer in the then REC Silchar,
India. His research interests cover semi­
conductor devices and circuits, MOS
transistor modeling, and MEMS-based
energy harvesting. He has published over 90 papers in peer-reviewed
journals. Dr. Baishya is a senior member of the IEEE and a Fellow of
the Institution of Engineers (India). He received his BE degree from the
Assam Engineering College, Guwahat, India; MTech degree from IIT
Kanpur, both in Electrical Engineering; and PhD degree in Engineering
from Jadavpur University, Kolkata, India.
Contents
Contributors ......................................................................................................... ix

Abbreviations ....................................................................................................... xi

Preface .................................................................................................................xv

1. Moore’s Law: In the 21st Century ............................................................ 1

N. P. Maity and Reshmi Maity
2. SiO ‑Based MOS Devices: Leakage and Limitations ............................ 13

2
N. P. Maity and Reshmi Maity
3. High‑k Dielectric Materials: Structural Properties and Selection ....... 31

P. Sri Harsha, K. Venkata Saravanan, and V. Madhurima
4. Selection of High‑k Dielectric Materials .................................................59

N. P. Maity and Reshmi Maity
5. Tunneling Current Density and Tunnel Resistivity: Application to

High-k Material HfO ............................................................................... 73

2
N. P. Maity and Reshmi Maity
6. Analysis of Interface Charge Density: Application to High‑k

Material Tantalum Pentoxide .................................................................. 89

N. P. Maity and Reshmi Maity
7. High‑k Material Processing in CMOS VLSI Technology .................... 115

Partha Pratim Sahu
8. Tunnel FET: Working, Structure, and Modeling ................................. 183

Srimanta Baishya
9. Heusler Compound: A Novel Material for Optoelectronic,

Thermoelectric, and Spintronic Applications ....................................... 201

D. P. Rai
Index ................................................................................................................. 239

Contributors
Prof. Srimanta Baishya, Professor and Dean (Academic)
Department of Electronics and Communication Engineering, National Institute of Technology,
Silchar-788010, India
Prof. V. Madhurima, Professor
Department of Physics, School of Basic and Applied Sciences, Central University of Tamilnadu,
Thiruvarur, Tamilnadu, India
Dr. Niladri Pratap Maity, Associate Professor and Head
Department of Electronics and Communication Engineering, Mizoram University
(A Central University), Aizawl-796004, India
Dr. Reshmi Maity, Associate Professor
Department of Electronics and Communication Engineering, Mizoram University
(A Central University), Aizawl-796004, India
Dr. D. P. Rai, Assistant Professor
Physical Sciences Research Center (PSRC), Department of Physics, Pachhunga University College,
Aizawl-796001, India
Prof. P. P. Sahu, Professor and Head
Department of Electronics and Communication Engineering, Tezpur University
(A Central University), Tezpur-784028, India
P. Sri Harsha, Research Scholar
Department of Physics, School of Basic and Applied Sciences, Central University of Tamilnadu,
Thiruvarur, Tamilnadu, India
K. Venkata Saravanan, Research Scholar
Department of Physics, School of Basic and Applied Sciences, Central University of Tamilnadu,
Thiruvarur, Tamilnadu, India