GaN on Anything

72 Pages·2017·14.94 MB·English

Volume 23 Issue 1 JANUARY / FEBRUARY 2017 @compoundsemi www.compoundsemiconductor.net
Turbo-charging LiFi with
semi-polar lasers
Removing thermal
barriers to GaN HEMTs
Trumping incumbents
with quantum dot lasers
Uniting III-V tunnel FETs
with silicon substrates
IEDM
Niobium nitride enables
epitaxial lift-off of GaN
Showcasing III-V success
inside N ews Review, News Analysis, Features, Research Review, and much more...
Free Weekly E News round up go to: www.compoundsemiconductor.net
Front Cover CSv2RS.indd 1 30/01/2017 14:40
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Viewpoint
By Dr Richard Stevenson, Editor
III-Vs get out and about
THE PHRASE “electron devices” strikes me as a little odd. It University claimed a record
seems to speak of a bygone era, when key building blocks for on-current for any III-V or
electrical engineers included various forms of vacuum tube. silicon MOSFET. Their device
Today, what we tend to talk about is the electronic device, sports indium-rich nanowires
sometimes prefaced with the term solid-state. with a benefi cial distribution of
interface states.
Where the phrase “electron devices” does crop up is in the title
to the annual IEEE Electron Devices Meeting, often referred to Northrop Grumman are
as IEDM. It has been running for well over fi fty years. renowned for their pioneering
efforts in InP terahertz
I have no idea what technologies dominated the proceedings of technology, and at the latest
the early meetings, but in the ten or more years that I’ve been IEDM Bill Deal claimed that
following the papers given at IEDM silicon has been dominant. the team had produced the
However, its stranglehold is weakening, with increasing content fi rst transistor gain at 1 THz
of III-V success. or more. They have set the
bar high: a gain of 10 dB is
The most recent meeting continued this trend, with reports produced by their ten-stage
of advances in GaN and SiC power devices, greater gain in amp.
terahertz InP amplifi ers and III-V MOSFETs with record on-
currents. Details are given in my round-up on p22: IEDM Breakthroughs in GaN power technology included a novel
showcases compound semiconductor successes. GaN rectifi er by MIT that employed fi eld rings to slash leakage
currents and boost the blocking voltage; and Panasonic
During the last few years, there have been quite a few papers at described development of a gate-injected GaN transistor that
IEDM detailing breakthroughs that could lead to improvement slashes switching losses, and the introduction of semi-polar
in MOSFET technology through the introduction of III-Vs. These gates in vertical structures that increase the capability of high-
higher mobility materials promise to maintain on-currents current, high-voltage switching.
while reducing the supply voltage – and ultimately the power
consumption per transistor. At the most recent meetings, there These papers at IEDM highlight the talent of researchers within
were a relatively small number of papers on this topic – I’m this community. I look forward to informing you of many more
not quite sure what to make of that – but a group from Lund advances in that vein through 2017.
Editor Richard Stevenson [email protected] [phone] Circulation Director Jan Smoothy [email protected] [phone]
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ViewPoint v5MG.indd 3 01/02/2017 11:19
Volume 23 ISSUE 1 2017
CONTENTS
COVER STORY
22 IEDM showcases
compound
semiconductor
22
successes

III-V devices deliver record on-currents,
unprecedented gain at terahertz frequencies
and far lower power-switching losses
32 Removing thermal
barriers to GaN
HEMTs

Power densities produced by GaN HEMTs can 44 GaN on anything
reach their full potential by integrating these devices

with diamond and microfluidic cooling
Giving GaN freedom from SiC with NbN
2
38 Uniting III-V tunnel
54 InP lasers: Trumping
FETs with silicon
the incumbents with

Template-assisted selective epitaxy enables quantum dots
the construction of ultra-low power III-V TFETs on

silicon substrates
Very high data rates and tremendous temperature
stability make the InP quantum dot laser a very
promising contender for tomorrow’s optical
networks
60 Turbocharging LiFi
with semi-polar
lasers

A record-breaking bandwidth makes the violet
60
semi-polar laser well suited for visible light
communication
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Contents v2.indd 4 01/02/2017 11:20
news news analysis research review
06 16 66
LED price drop is driving away Time to switch? Annealing boosts green laser
manufacturers efficiency
18
A faster slice
07 67
Peregrine introduces next Nano-antenna enhance terahertz
20
generation UltraCMOS platform Beyond the horizon sensitivity
08 68
Growing thicker, more boron-rich Smoothing non-polar AlGaN films
BAlN
10
Lumileds claims efficiency record
with Luxeon MX multi-die emitter
11
Defence and aerospace continue
to dominate GaN device market
12
Philips to sell majority share of
Lumileds to US firm
06 16 32
COPYRIGHT COMPOUND SEMICONDUCTOR l JANUARY / FEBRUARY 2017 l WWW.COMPOUNDSEMICONDUCTOR.NET 5
Contents v2.indd 5 01/02/2017 11:20
s
news review
LED price drop is driving
Aixtron announces
new CEO
away manufacturers
AIXTRON SE has announced that the
current CEO of the company, Martin
ALTHOUGH residential and commercial Goetzeler, is leaving the company at
industries are widely adopting energy- the end of his contract on February
efficient LEDs, the drop in LED prices 28, 2017.
is driving away manufacturers because
of decreased profitability, dramatically Former Aixtron Executive Board
dislocating and restructuring the solid- Member and current Supervisory
state lighting marketplace, says a new Board Chairman, Kim Schindelhauer,
US National Academies of Sciences, will take on Goetzeler’s duties as CEO
Engineering, and Medicine report. and CFO on an interim basis starting
March 1, 2017, until a successor
Since the last Academies report in 2013 warns that the successful proliferation is found. The strategy adopted will
that assessed the state of solid-state of such applications would not focus on continue unchanged.
lighting, the annual residential installation the reduction of energy consumption
of LED bulbs has increased six fold alone, but the US Department of Energy Goetzeler, whose responsibilities
between 2012 and 2014, from 13 million (DOE) should think of ways to continue included strategy, finances, and also
to 78 million. to improve their efficiency, given their personnel as industrial relations
inevitable growth. director, is leaving the company for
The report Assessment of Advanced personal reasons and in agreement
Solid-State Lighting, Phase 2 also cites The committee recommended with the company’s Supervisory
the emergence of new applications for developing strategies for supporting Board.
solid-state lighting that have the potential broader research that enables
to create new markets and commercial more efficient use of light across all “During Mr. Goetzeler’s tenure,
opportunities for the industry, as well applications, with attention to both the Aixtron’s technology portfolio was
as add value to aspects related to lighting design process and the design of diversified considerably and the
quality of life. For example, product and lighting products. company oriented its strategy toward
lighting designers are exploring options the future markets it identified. In
that collect and process data from With the possible emergence of new addition, both the focus on profitability
the illuminated environment and offer applications for solid state lighting, both as well as the awareness of costs
additional features to consumers. consumers and industry need to be more were successfully internalised in the
fully educated about the transformative company and the financial results
Developing new products with multiple and broader implications of solid state steadily improved,” explained
features that offer functions beyond lighting, the report highlights. To achieve Supervisory Board chairman Kim
illumination could promise higher this, DOE should partner with industry, Schindelhauer. “
margins for manufacturers, said the states, and utility companies to develop
committee that conducted the study and implement a public outreach He strengthened the relationships
and wrote the new report. The report program to deploy solid-state lighting. with the Chinese market and
consequently initiated the planned
China deal.” continued Schindelhauer.
“He was greatly dedicated to this
Toshiba launches second-generation SiC diodes
effort. We thank Mr. Goetzeler for his
exemplary service to Aixtron since his
TOSHIBA has launched a second generation of 650 V SiC schottky barrier diodes appointment in March 2013 and wish
(SBDs). Fabricated with the company’s second-generation SiC process, they deliver him every success in his continued
approximately 70 percent better surge forward current than first generation products. career.”
At the same time, they reduce the switching loss index of R Q by around Wolfgang Blättchen, current deputy
dsON C
30 percent, making them suitable for use in efficient power factor correction (PFC) chairman of the Supervisory Board
schemes. will take over as chair during
Schindelhauer’s work as CEO of the
The new products are available in four current ratings of 4 A, 6 A, 8 A, and 10 A, either company.
in a non-isolated TO-220-2L package or an isolated TO-220F-2L package. These
products can contribute to improving the efficiency of power supplies in devices
including 4K large screen LCD TVs, projectors and multifunction copiers, and in
industrial devices such as telecommunication base stations and PC servers,
according to Toshiba.
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news review
Peregrine introduces next-generation
UltraCMOS platform
RF SOI (silicon on insulator) company OFF state (COFF, or off capacitance). a custom fabrication flow from
Peregrine Semiconductor has announced With each new UltraCMOS generation, Globalfoundries. UltraCMOS 11
the UltraCMOS 12 technology platform. Peregrine targets a 20-percent technology, introduced in July 2015,
Now in production, this next-generation improvement in R C . UltraCMOS was the industry’s first RF SOI 300 mm
ON OFF
RF SOI platform is claimed to have the 12 technology surpasses this target and platform, and UltraCMOS 10, introduced
industry’s lowest R C performance sets a new industry standard for R C in October 2013, delivered the industry’s
ON OFF ON OFF
level of 80fs – a 25 percent improvement performance, according to the company. best R C performance, at the time.
ON OFF
over the last generation.
“For nearly three decades, Peregrine’s “Our joint development with Peregrine
To develop the 300 mm UltraCMOS UltraCMOS technology platform Semiconductor continues to produce
12 platform, Peregrine collaborated with has been at the forefront of RF SOI remarkable results, and UltraCMOS
Globalfoundries, a leading full-service performance – especially for RF 12 technology is the latest success
semiconductor foundry. switching,” says Alain Duvallet, vice story,” said Raj Nair, vice president
president of RF process technology at of technology development at
A key metric for RF switching, R C is Peregrine Semiconductor. “This legacy Globalfoundries.
ON OFF
Peregrine’s performance benchmark for continues with today’s introduction of
each new generation of the UltraCMOS the UltraCMOS 12 platform, which boasts “This new RF SOI technology reaffirms
platform. R C is a ratio of how much the industry’s best R C performance. our commitment to the RF market
ON OFF ON OFF
loss occurs when a radio signal goes And this technology breakthrough is on and is another example of how
through a switch in its ON state (RON, or a 300 mm RF SOI wafer!” UltraCMOS Globalfoundries can provide industry-
on-resistance) and how much the radio 12 technology, like the two generations leading levels of performance, reliability
signal leaks through the capacitor in its prior – UltraCMOS 10 and 11, uses and scalability.
Start-up aims to shake up compound semi market
CARBONICS, a venture-backed Los “Carbonics has achieved a unique
Angeles start-up, has launched its zebra milestone in the evolution of carbon
single-walled carbon nanotube (CNT)-on- electronics,” said Ken Hansen, president
silicon technology. and CEO of Semiconductor Research
Corporation (SRC). “This is a crucial
Aimed at RF applications, the technology first step from Carbonics toward high
is said to be 30 times more linear than performance, next-generation RF
GaAs; 1000 times better in power than electronics using next-generation
GaAs; 100 percent CMOS compatible; nanotechnology for high performance
and able to cut component cost by mmWave RF and CMOS compatibility.
50 percent.
It’s exciting to see the progress from Carbonics also plans to launch its
With the launch of its zebra wafers, the fundamental material and device viper product line made up of high
Carbonics says it wants to give design research sponsored by SRC and performance RF devices and integrated
engineers, foundries, and device DARPA develop into the launch of a amplifiers in 2017 and its stingray
manufacturers access to the best and groundbreaking product technology.” product line of RFICs and MMICs that
most advanced semiconducting platform The zebra wafer product line includes the will include high performance mmWave
for designing next-generation high speed zebra bolt with aligned semiconducting LNA, PAs, mixers, switches and front-end
circuits. CNT on 15 nm SiO for backgated modules (FEMs) in 2018.
2
device applications such as sensors and
“Carbonics intends to shake up the detectors; the zebra dash with aligned Carbonics was spun-out from UCLA and
billion-dollar compound semiconductor semiconducting CNT on 1500 nm for top- USC and funded by university-sponsored
market with our superior disruptive gated devices such as memory, switch, research from the Centre of Excellence
carbon technology that is fully CMOS logic and RF applications covering for Green Nanotechnologies at UCLA
compatible and able to perform in the L-Band to mmWave and 3G, 4G, 4G, and King Abdulaziz City for Science
mmWave spectrum – representing WiFi, 802.11ad and WiGig spectrums; and Technology Center (KACST), SRC,
perfect timing for the 5G and Internet of and the zebra sprint with aligned DARPA, US Air Force and UCLA’s
Things (IoT) revolution,” said Carbonics semiconducting CNT on quartz aimed California NanoSystems Institute
CEO Kos Galatsis. for RF applications up to 100 GHz. Technology Incubator.
COPYRIGHT COMPOUND SEMICONDUCTOR l JANUARY / FEBRUARY 2017 l WWW.COMPOUNDSEMICONDUCTOR.NET 7
News CS v3.indd 7 01/02/2017 11:36
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news review
Growing thicker, more boron-rich BAlN
WITH A COMPARABLE bandgap to 12 percent and 17 percent. This indicates
aluminium-rich AlGaN, BAlN is a very that the boron atoms in the precursors
promising alternative for making deep UV were incorporated into the thin fi lms as
optical devices. One of its great attributes effi ciently as the aluminium atoms. The
is a smaller lattice constant that can be growth effi ciency, on the other hand, was
used to tune the strain and thus enable determined to be 2,000 μm/mol, implying
optical polarization engineering. that 31 percent of the injected group-III
precursors formed the thin fi lms. This
The addition of boron also reduces the growth effi ciency is similar to the ones
refractive index, making it possible to of recent reports of effi cient AlN growth,
fabricate BAlN/AlGaN distributed Bragg showing the suppression of parasitic
refl ectors with refl ectivity close to unity. Scrutinising the fi lms with transmission reactions.
electron microscopy confi rmed the
Up until now, utilisation of BAlN has been wurtzite crystal structure. However, Despite the progress, the team believes
held back by the low boron content of the determining the material composition for that more effort is needed to improve the
wurtzite BAlN and its thickness: boron BAlN is not trivial. X-ray diffraction can BAlN material quality. One interesting
content has been limited to no more than produce large errors, due to the lack of phenomenon described in previous
10 percent by MOCVD, and thickness lattice references of BAlN and existence reports, and observed by the team, is
has been restricted to 10 nm or less. of strain and defects. that a decreased growth temperature
facilitates the formation of wurtzite
According to reports, the root causes To address this concern, the researchers BAlN. However, a lower temperature is
for these drawbacks include premature utilized Rutherford backscattering undesirable for the AlN phase, which
reaction, phase separation, and short spectrometry (RBS) which is a reliable is dominant in the BAlN alloys with
diffusion length of boron atoms. The and accurate method for the composition relative low boron compositions. This is
growth effi ciency is also compromised as of common thin fi lms. However, the RBS apparently counterintuitive as a shorter
a result the premature reaction. signal of boron atoms was weak, due to covalent bond tends to result in the need
the small nucleus. Large errors result, so for higher growth temperature for the
Recently, however, there has been a to ensure a reliable fi gure, composition ‘conventional’ III-nitride binary alloys,
breakthrough by a team from Georgia of aluminium was determined fi rst from including InN, GaN, and AlN.
Tech, Arizona State and KAUST, that is the RBS measurement, and that of boron
led by Xiaohang Li, Fernando Ponce, deduced by simple subtraction, since This collaborative work, which received
Russell Dupuis. By optimising growth BAlN is ternary. fi nancial support from the U.S. National
conditions, in terms of V/III ratio and Science Foundation, Georgia Research
temperature, and turning to a pulse Another remarkable result of the study is Alliance, and KAUST, is detailed in
growth mode, these researchers were the high boron incorporation effi ciency the paper: 100-nm thick single-phase
able to produce a 100-nm thick single- and growth effi ciency. In this study, the wurtzite BAlN fi lms with boron contents
phase wurtzite BAlN thin fi lms with B/III ratios leading to boron compositions over 10 percent, from Physica Status
boron compositions up to 14.4 percent. of 11 percent and 14.4 percent were Solidi B, 1600699 (2017).
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Untitled-1 1 08/03/2016 10:23
Untitled-1 1 02/07/2014 11:05
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news review
Lumileds claims efficiency record with
Luxeon MX multi-die emitter
LUMILEDS has introduced the Luxeon on their LED street lighting projects,
MX, a multi-die emitter that is claimed to while also realising the fast return on
deliver industry leading efficiency and investment from using the most efficient
flux for outdoor fixtures and high bay emitters,” said Danielson.
lighting applications.
Furthermore, the Luxeon MX uses a
Lighting fixtures benefit from the emitter’s new, robust package that increases the
1,200 lumen, 150 lm/W efficacy, at 85°C projected lumen maintenance compared
which enables a system efficiency of to the Luxeon M. The Luxeon MX is
120 lm/W when driven at 700mA. “This is an instant upgrade to the Luxeon M,
double the flux of comparable emitters in featuring identical footprint and optical
120 lm/W systems. We’ve achieved this and lifetime. The Luxeon MX makes it characteristics.
performance leap by optimising the possible for luminaire makers to meet the
LED for improved efficiency at higher efficiency and quality requirements of the The Luxeon MX multi-die emitter will be
drive currents up to 1.5 A with the DesignLights Consortium (DLC) Premium offered in a range of colour temperatures
12 V device,” explained Seth Danielson, V4.1 at 700 mA 85°C. (3000K to 6500K) and CRIs (70, 80
product manager for the Luxeon MX. and 90) in convenient 3 V, 6 V and
“By creating products eligible for the 12 V configurations. Applications include
With these developments, Lumileds DLC Qualified Products List, cities roadway lighting, street lighting, stadium
says it has maximised emitter efficiency and municipalities can receive rebates lighting and high bay fixtures.
VisIC raises over $11 million for GaN commercialisation
VisIC TECHNOLOGIES, an Israel-based inverters, UPS, power supplies for cloud/ GaN based products. It is an important
start-up focused on high voltage GaN datacentres and electric motor drives, milestone for our company.
power semiconductors, has closed has been marketed and anticipated for
$11.6 million in a Series C financing led years, especially for high voltage and Having achieved the best performance
by a new investor Birch Investment with high current switching applications. metrics for any GaN devices in the
participation of existing investors. market, this new capital infusion positions
“We are very excited by the level of us to accelerate commercialisation and
The potential of GaN-based electronics support provided by VisIC’s new and dominate the market segment,” said
for electrical power delivery systems, existing investors, who share our vision Tamara Baksht, VisIC Technologies’
from consumer power supplies to solar for the extraordinary potential of VisIC’s founder and CEO.
VCSEL market worth $2.4 billion by 2021
ACCORDING to a new report by Zion Research, the global Industry Perspective, Comprehensive Analysis and Forecast,
VCSEL market accounted for around $760 million in 2015 and 2015 – 2021. Data communication has been the leading
is expected to reach $2.4 billion by 2021, growing at a CAGR of application segment with over 57 percent of share in 2015. It
around 21.3 percent between 2016 and 2021. is expected to maintain its dominance throughout the forecast
period mainly because of the construction of new datacentres.
The VCSEL has gained a reputation as a superior technology Sensing applications are expected to exhibit high growth in
for short reach applications such as infrared illumination, China. Automotive applications are expected to grow at the
fibre channel and intra-systems links, due to the VCSEL’s low highest CAGR of 25.11 percent during the forecast period.
manufacturing costs and high reliability.
North America was the largest market for VCSEL in 2015 and
Advancement in automotive electronics, growing numbers of is expected to continue its dominance throughout the forecast
datacentres and increasing demand from gesture recognition period. Europe is expected to show high growth driven by the
and 3D imaging are some of the major driving factors expected rising use of VCSEL in consumer electronics. Asia Pacific is
to propel the growth of VCSELs, according to the report VCSEL considered to be the fastest growing market for VCSEL, due to
Market by Application for Data Centers, Consumer Electronics, the surge in datacentres paired with significant growth of the
Automotive, Industrial, Healthcare and Others End Users: Global automotive sector in China and India.
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