Electronic device architectures for the nano-CMOS era: from ultimate CMOS scaling to beyond CMOS devices PDF
Preview Electronic device architectures for the nano-CMOS era: from ultimate CMOS scaling to beyond CMOS devices
Electronic Device Architectures for the Nano-CMOS Era From Ultimate CMOS Scaling to Beyond CMOS Devices V015tp.indd 1 9/1/08 5:18:18 PM TThhiiss ppaaggee iinntteennttiioonnaallllyy lleefftt bbllaannkk Electronic Device Architectures for the Nano-CMOS Era From Ultimate CMOS Scaling to Beyond CMOS Devices Editor Simon Deleonibus CEA-LETI, France V015tp.indd 2 9/1/08 5:18:18 PM A-PDF Merger DEMO : Purchase from www.A-PDF.com to remove the watermark Published by Pan Stanford Publishing Pte. Ltd. 5 Toh Tuck Link Singapore 596224 Distributed by World Scientific Publishing Co. Pte. Ltd. 5 Toh Tuck Link, Singapore 596224 USA office: 27 Warren Street, Suite 401-402, Hackensack, NJ 07601 UK office: 57 Shelton Street, Covent Garden, London WC2H 9HE British Library Cataloguing-in-Publication Data A catalogue record for this book is available from the British Library. ELECTRONIC DEVICE ARCHITECTURES FOR THE NANO-CMOS ERA From Ultimate CMOS Scaling to Beyond CMOS Devices Copyright © 2009 by Pan Stanford Publishing Pte. Ltd. All rights reserved. This book, or parts thereof, may not be reproduced in any form or by any means, electronic or mechanical, including photocopying, recording or any information storage and retrieval system now known or to be invented, without written permission from the Publisher. For photocopying of material in this volume, please pay a copying fee through the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, USA. In this case permission to photocopy is not required from the publisher. ISBN-13978-981-4241-28-1 ISBN-10981-4241-28-8 Typeset by Research Publishing Services E-mail: [email protected] Printed in Singapore by Mainland Press Pte Ltd. Rhaimie - Electronic device Archi.pmd 1 12/29/2008, 2:21 PM RPS ElectronicDeviceArchitecturesfortheNano-CMOSEra “Preface” 2008/7/28 v Acknowledgments Iwishtocongratulateallcontributorsandtheirpeers,allofwhomareworld- renownedresearchersfromtopuniversities,institutionsandorganisations, for the results of their research. Their convictions and efforts were key elementsforthesuccessofthisenterprise. I wish to specially acknowledge Professor Hiroshi Iwai of Tokyo Institute of Technology (Yokohama, Japan) and former IEEE Electron DeviceSocietyPresident,forhisadvice,chaptercontributionandpersonal encouragement. The support of Professors Jean-Pierre Colinge (Tyndall, Cork, Ire- land), Cor Claeys (IMEC, Leuven, Belgium), the present IEEE Electron Device Society President, Masataka Hirose (AIST, Tsukuba, Japan), and Jim Hutchby (SRC, Durham-NC, USA), to the promotion of the book is alsoappreciated.TheirinfluenceinthefieldofNanoelectronics,Nanotech- nology and Nanoscience is a reflection of the high scientific level of the differentcontributions. I have special thanks to address to Mr. Stanford Chong, Mr. Rhaimie WahapandstaffmembersofPanStanfordPublishingfortheirresponsive- nessandimmensepatiencedemonstratedthroughoutthewholeprocessof thebook’spublishing. Finally, none of this would have been possible without the support of CEA-LETI.Themoralsupportandattentionfrommywife,Genevièveand mysonTristan,havebeenofutmostimportancetome.Iwishtodedicate thisworktothem. SimonDeleonibus CEA-LETI/MINATEC CEA-Grenoble,17ruedesMartyrs38054 GrenobleCedex09,France [email protected] v RPS ElectronicDeviceArchitecturesfortheNano-CMOSEra “Preface” 2008/7/28 vi TThhiiss ppaaggee iinntteennttiioonnaallllyy lleefftt bbllaannkk RPS ElectronicDeviceArchitecturesfortheNano-CMOSEra “content” 2008/7/28 vii Contents Acknowledgments v Introduction ix Section1 CMOSNanoelectronics.ReachingtheEndof 1 theRoadmap Sub-section1.1 CoreCMOS 3 Chapter1 PhysicalandTechnologicalLimitationsof 5 NANOCMOSDevicestotheEndofthe RoadmapandBeyond SimonDeleonibus,OlivierFaynot, BarbaradeSalvo,ThomasErnst, CyrilleLeRoyer,ThierryPoirouxand MaudVinet Chapter2 AdvancedCMOSDevicesonBulkandSOI: 55 Physics,ModelingandCharacterization ThierryPoirouxandGillesLeCarval Chapter3 DevicesStructuresandCarrierTransport 81 PropertiesofAdvancedCMOSusingHigh MobilityChannels ShinichiTakagi,TsutomuTezuka, ToshifumiIrisawa,ShuNakaharai, ToshinoriNumata,KojiUsuda, NaoharuSugiyama,MasatoShichijo, RyoshoNakaneandSatoshiSugahara Chapter4 High-KGateDielectrics 105 HeiWong,KenjiShiraishi,KuniyukiKakushima, andHiroshiIwai Chapter5 FabricationofSourceandDrain—Ultra 141 ShallowJunction BunjiMizuno vii RPS ElectronicDeviceArchitecturesfortheNano-CMOSEra “content” 2008/7/28 viii ElectronicDeviceArchitecturesfortheNano-CMOSEra Chapter6 NewInterconnectSchemes:EndofCopper, 159 OpticalInterconnects? SuzanneLaval,LaurentVivien,EricCassan, DelphineMarris-MoriniandJean-MarcFédéli Sub-section1.2 MemoryDevices 185 Chapter7 TechnologiesandKeyDesignIssuesfor 187 MemoryDevices KinamKimandGitaeJeong Chapter8 FeRAMandMRAMTechnologies 211 YoshihiroArimoto Chapter9 AdvancedChargeStorageMemories:From 241 SiliconNanocrystalstoMolecularDevices BarbaraDeSalvoandGabrielMolas Section2 CMOSNanoelectronics.Reachingthe 277 EndoftheRoadmap Chapter10 SingleElectronDevicesandApplications 279 JacquesGautier,XavierJehl,andMarcSanquer Chapter11 ElectronicPropertiesofOrganicMonolayers 299 andMolecularDevices DominiqueVuillaume Chapter12 CarbonNanotubeElectronics 333 VincentDerycke,AriannaFiloramoand Jean-PhilippeBourgoin Chapter13 SpinElectronics 365 Kyung-JinLeeandSangHoLim Chapter14 TheLongerTerm:QuantumInformation 387 ProcessingandCommunication PhilippeJorrand Index 421 viii S.Deleonibus RPS ElectronicDeviceArchitecturesfortheNano-CMOSEra “intro” 2008/7/28 ix Introduction Electronic Devices Architectures for the NANO-CMOS Era — From Ultimate CMOS Scaling to Beyond CMOS devices Since the invention of the first calculation machines, miniaturization has been a constant challenge to increase speed and complexity. Electronic deviceshavebrought,andwillbringinthefuture,afarincreasingnumber of new functions to the basic computing systems such as fast data com- puting, telecommunication, several kinds of actuations,…which are col- lectivelyfabricatedonthesamephysicalobjectnamedsolidstatecircuit1, integratedcircuitor“chip”.Electronicdevicesaresosmall,thatbillionsof basic functions are accessible in a hand held system. Moreover, their unit cost has been divided by more than a factor of 100 millions over the past 30years!Thecollectivefabricationofelectronicdevicescoupledwiththe increase of their speed has given a tremendous success, which is unique in the history of mankind, to Micro and Nanoelectronics by continuously introducing innovations in the fabrication process (Fig. 1). Linear scaling ofdevicesdimensionstoaquasi-nanometerlevelallowstobuildcomplex systemsintegratedonachip(Fig.1)whichreducedrasticallytheirvolume andpowerconsumptionperfunction,whilsttremendouslyincreasingtheir speed.Inthefuture,opportunitieswillappeartobuildsytemsinamolecule. Nanoscience and Nanotechnology researchers join their efforts to Nano- electronics actors in order to offer mankind possibilities of pervasion of theirknowledgeintotheconstructionofnanosystems. Electronic Devices Architectures for the NANO-CMOS Era, is a review for the use of Nanoelectronics, Nanoscience and Nanotechnology researchersandengineers,inwhichweaddress: (1) theoptionstolinearlyscaledownlogicCMOSormemories; (2) thepossiblecompetingbreakthrougharchitecturesallowingtorelaxon thelinearscalingchallenges; (3) thenewpathsforintegratedelectronics. Thependingalternativesaretwoways: (1) try to continue the scaling of Ultimate CMOS requesting new materi- alsor ix
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