Electronic and Optoelectronic Properties of Semiconductor Structures

559 Pages·2006·11.48 MB·English

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ElectronicandOptoelectronicPropertiesof SemiconductorStructurespresentstheunder-
lying physics behind devices that drive today’s technologies. The book covers important
detailsof structuralproperties,bandstructure,transport,opticalandmagneticproperties
of semiconductorstructures.Effectsof low-dimensionalphysicsandstrain–twoimportant
driving forces in modern device technology – are also discussed. In addition to conven-
tional semiconductor physics the book discusses self-assembled structures, mesoscopic
structuresandthedevelopingfieldof spintronics.
Thebookutilizescarefullychosensolvedexamplestoconveyimportantconceptsandhas
over 250 figures and 200 homework exercises. Real-world applications are highlighted
throughoutthebook,stressingthelinksbetweenphysicalprinciplesandactualdevices.
ElectronicandOptoelectronicPropertiesofSemiconductorStructuresprovidesengineering
and physics students and practitioners with complete and coherent coverage of key
modern semiconductor concepts. A solutions manual and set of viewgraphs for use in
lecturesisavailableforinstructors.
  received his Ph.D. from the University of Chicago and is Professor of
ElectricalEngineeringandComputerScienceattheUniversityof Michigan,AnnArbor.
He has held visiting positions at the University of California, Santa Barbara and the
Universityof Tokyo.Heistheauthorof over250technicalpapersandof sevenprevious
textbooksonsemiconductortechnologyandappliedphysics.

Electronic and Optoelectronic Properties
of Semiconductor Structures
Jasprit Singh
University of Michigan, Ann Arbor
  
Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo
Cambridge University Press
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The Edinburgh Building, Cambridge , United Kingdom
Published in the United States of America by Cambridge University Press, New York
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© Cambridge University Press 2003
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CONTENTS
PREFACE xiii
INTRODUCTION xiv
I.1 SURVEY OF ADVANCES IN SEMICONDUCTOR
PHYSICS xiv
I.2 PHYSICS BEHIND SEMICONDUCTORS xvi
I.3 ROLE OFTHIS BOOK xviii
1 STRUCTURAL PROPERTIES
OF SEMICONDUCTORS 1
1.1 INTRODUCTION 1
1.2 CRYSTAL GROWTH 2
1.2.1 BulkCrystalGrowth 2
1.2.2 EpitaxialCrystalGrowth 3
1.2.3 EpitaxialRegrowth 9
1.3 CRYSTAL STRUCTURE 10
1.3.1 BasicLatticeTypes 12
1.3.2 BasicCrystalStructures 15
1.3.3 NotationtoDenotePlanesandPointsinaLattice:
MillerIndices 16
1.3.4 ArtificialStructures:SuperlatticesandQuantumWells 21
1.3.5 Surfaces:IdealVersusReal 22
1.3.6 Interfaces 23
1.3.7 DefectsinSemiconductors 24
vi Contents
1.4 STRAINED HETEROSTRUCTURES 26
1.5 STRAINED TENSOR IN LATTICE MISMATCHED EPITAXY 32
1.6 POLAR MATERIALS AND POLARIZATION CHARGE 35
1.7 TECHNOLOGY CHALLENGES 41
1.8 PROBLEMS 41
1.9 REFERENCES 44
2
SEMICONDUCTOR BANDSTRUCTURE 46
2.1 INTRODUCTION 46
2.2 BLOCH THEOREM AND CRYSTAL MOMENTUM 47
2.2.1 Significanceofthek-vector 49
2.3 METALS, INSULATORS,AND SEMICONDUCTORS 51
2.4 TIGHT BINDING METHOD 54
2.4.1 BandstructureArisingFromaSingleAtomics-Level 57
2.4.2 BandstructureofSemiconductors 60
2.5 SPIN-ORBITCOUPLING 62
2.5.1 SymmetryofBandedgeStates 68
2.6 ORTHOGONALIZED PLANE WAVE METHOD 70
2.7 PSEUDOPOTENTIAL METHOD 71
2.8 k•p METHOD 74
2.9 SELECTED BANDSTRUCTURES 80
2.10 MOBILE CARRIERS: INTRINSIC CARRIERS 84
2.11 DOPING: DONORS AND ACCEPTORS 92
2.11.1CarriersinDopedSemiconductors 95
2.11.2MobileCarrierDensityandCarrierFreezeout 96
2.11.3EquilibriumDensityofCarriersinDopedSemiconductors 97
2.11.4HeavilyDopedSemiconductors 99
2.12 TECHNOLOGY CHALLENGES 102
2.13 PROBLEMS 104
2.14 REFERENCES 107
Contents vii
3
BANDSTRUCTURE MODIFICATIONS 109
3.1 BANDSTRUCTURE OF SEMICONDUCTOR ALLOYS 109
3.1.1 GaAs/AlAsAlloy 113
3.1.2 InAs/GaAsAlloy 113
3.1.3 HgTe/CdTeAlloy 116
3.1.4 Si/GeAlloy 117
3.1.5 InN,GaN,AlNSystem 117
3.2 BANDSTRUCTURE MODIFICATIONS BY HETEROSTRUCTURES 118
3.2.1 BandstructureinQuantumWells 119
3.2.2 ValenceBandstructureinQuantumWells 123
3.3 SUB-2-DIMENSIONAL SYSTEMS 124
3.4 STRAIN AND DEFORMATION POTENTIALTHEORY 129
3.4.1 StrainedQuantumWells 137
3.4.2 Self-AssembledQuantumDots 140
3.5 POLAR HETEROSTRUCTURES 142
3.6 TECHNOLOGY ISSUES 145
3.7 PROBLEMS 145
3.8 REFERENCES 149
4
TRANSPORT: GENERAL FORMALISM 152
4.1 INTRODUCTION 152
4.2 BOLTZMANN TRANSPORT EQUATION 153
4.2.1 Diffusion-InducedEvolutionoff (r) 155
k
4.2.2 ExternalField-InducedEvolutionoff (r) 156
k
4.2.3 Scattering-InducedEvolutionoff (r) 156
k
4.3 AVERAGING PROCEDURES 163
4.4 TRANSPORT IN A WEAK MAGNETIC FIELD: HALL MOBILITY 165
4.5 SOLUTION OF THEBOLTZMANN TRANSPORT EQUATION 168
4.5.1 IterativeApproach 168
4.6 BALANCE EQUATION: TRANSPORT PARAMETERS 169
4.7 TECHNOLOGY ISSUES 175
4.8 PROBLEMS 176
4.9 REFERENCES 177
viii Contents
5
DEFECT AND CARRIER–CARRIER SCATTERING
179
5.1 IONIZED IMPURITY SCATTERING 181
5.2 ALLOY SCATTERING 191
5.3 NEUTRAL IMPURITY SCATTERING 194
5.4 INTERFACE ROUGHNESS SCATTERING 196
5.5 CARRIER–CARRIER SCATTERING 198
5.5.1Electron–HoleScattering 198
5.5.2Electron–ElectronScattering:ScatteringofIdenticalParticles
201
5.6 AUGER PROCESSES AND IMPACT IONIZATION 205
5.7 PROBLEMS 213
5.8 REFERENCES 214
6
LATTICE VIBRATIONS: PHONON SCATTERING 217
6.1 LATTICE VIBRATIONS 217
6.2 PHONON STATISTICS 223
6.2.1 ConservationLawsinScatteringofParticlesInvolving
Phonons 224
6.3 POLAR OPTICAL PHONONS 225
6.4 PHONONSIN HETEROSTRUCTURES 230
6.5 PHONON SCATTERING: GENERAL FORMALISM 231
6.6 LIMITS ON PHONON WAVEVECTORS 237
6.6.1 IntravalleyAcousticPhononScattering 238
6.6.2 IntravalleyOpticalPhononScattering 239
6.6.3 IntervalleyPhononScattering 240
6.7 ACOUSTIC PHONON SCATTERING 241
6.8 OPTICAL PHONONS: DEFORMATION POTENTIAL SCATTERING 243
6.9 OPTICAL PHONONS: POLAR SCATTERING 246
6.10 INTERVALLEY SCATTERING 251