DTIC ADA345739: Overview of Device SEE Susceptibility from Heavy Ions

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by  Defense Technical Information Center

SMC-TR-98-16 AEROSPACE REPORT NO.
TR-93(3940)-4
Overview of Device SEE Susceptibility
from Heavy Ions
15 January 1998
Prepared by
D. K. NICHOLS, J. R. COSS, K. P. McCARTY, H. R. SCHWARTZ,
L. S. SMITH, G. M. SWIFT, and R. K. WATSON
Jet Propulsion Laboratory
Pasadena, CA
and
R. KOGA, W. R. CRAIN, K. B. CRAWFORD, AND S. J. HANSEL
Space and Environment Technology Center
Technology Operations
The Aerospace Corporation
Prepared for
SPACE AND MISSILE SYSTEMS CENTER
AIR FORCE MATERIEL COMMAND
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Engineering and Technology Group
CSP
Ekffi QuXXR'
' IB
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4. TITLE AND SUBTITLE 5. FUNDING NUMBERS
Overview of Device SEE Susceptibility from Heavy Ions
F04701-93-C-0094
6. AUTHOR(S)
Nichols, D.K., Coss, J. R. McCarty, K. P., Schwartz, H. R., Smith, L. S., Swift,
G. M., Watson, R. K., Jet Propulsion Laboratory; Koga, R., Grain, W.R.,
PrawfrrH V Tt anH Han^l S T Thf» Af».msnare> Cnrnnratinn
7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION
REPORT NUMBER
The Aerospace Corporation
Technology Operations TR-93(3940)-4
El Segundo, CA 90245-4691
9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSORING/MONITORING
Space and Missile Systems Center AGENCY REPORT NUMBER
Air Force Materiel Command
SMC-TR-98-16
2430 E. El Segundo Blvd.
Los Angeles Air Force Base. CA 90245
11. SUPPLEMENTARY NOTES
12a. DISTRIBUTION/AVAILABILITY STATEMENT 12b. DISTRIBUTION CODE
Approved for public release; distribution unlimited
13. ABSTRACT (Maximum 200 words)
A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE
publications (1,2,3,4) in December issues for 1985,1987,1989, and 1991. Trends in SEE
susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.
14. SUBJECT TERMS 15. NUMBER OF PAGES
Heavy ion accelerator Linear energy transfer Single event effects 16
Heavy ion irradiation effects Microcircuits Single event upset 16. PRICE CODE
Latchup Radiation effects Space-borne electronics
17. SECURITY CLASSIFICATION 18. SECURITY CLASSIFICATION 19. SECURITY CLASSIFICATION 20. LIMITATION OF ABSTRACT
OF REPORT OF THIS PAGE OF ABSTRACT
Unclassified Unclassified Unclassified
Standard Form 298 (Rev. 2-89)
NSN 7540-01-280-5500
Prescribed by ANSI Std. Z39-18
298-102
OVERVIEW OF DEVICE SEE SUSCEPTIBILITY FROM HEAVY IONS
D. K. Nichols, J. R. Coss, K. P. McCarty, H. R. Schwartz,
L. S. Smith, G. M. Swift, R. K. Watson
Jet Propulsion Laboratory
California Institute of Technology
Pasadena, California
and
R. Koga, W. R. Crain, K. B. Crawford, S. J. Hansel
Space Sciences Laboratory
The Aerospace Corporation
El Segundo, California
Abstract Organization and Scope of Data
A fifth set of heavy ion single event effects (SEE) test This paper summarizes soft error and latchup
data have been collected since the last IEEE publications (1,2, experimental test data from the Jet Propulsion Laboratory
3, 4) in December issues for 1985, 1987, 1989 and 1991. (JPL), The Aerospace Corporation (A), John Hopkins Applied
Trends in SEE susceptibility (including soft errors and Physics Laboratory (JH), Centre National DEtudes Spatiales
latchup) for state-of-the-art parts are evaluated. (CNES, France), European Space Agency (ESA) and other
SEE testers. These data are provided directly to JPL or were
otherwise made available to the community during the two-
Introduction year period from January, 1991, through December, 1992. We
are pleased to include smaller SEE data sets generated by all
Ongoing SEE test programs at JPL .The Aerospace U. S. and foreign researchers when these data are made
Corporation, the European Space Agency (ESA), CNES and directly available to us. Not included are proprietary data
other organizations are continuing to assess specific part generated by subcontractors who used JPL hardware. Also
performance for interplanetary and satellite environments and omitted are now fairly extensive data sets on power transistor
to establish SEE response trends of an ever-increasing body of burnout obtained by JPL, Rockwell, Boeing and others- such
device data. data require a significantly different organization.
In 1985, Nichols et al (Ref. 1) published the first nearly The SEE data presented here and in the previous four
comprehensive listing of SEE test data for 186 parts. This reports (1,2,3, 4) represent a substantial majority of all test
presentation was updated in 1987 (Ref. 2) with the publication data obtained on SEE throughout the world. Some additional
of data for 83 additional parts, in 1989 (Ref. 3) with data for data may exist in other articles of this publication (IEEE-
154 parts, and in 1991 (Ref. 4) with data for 182 parts. In this Nuclear Science [Dec. 1993] or this conference's JEEE
paper, the authors extend the data base for 165 new parts. As Workshop Record), in other journals or in published and
before, the data are collected according to technology, unpublished presentations of SEE symposia.
function and manufacturer in order to identify trends,
generalizations and data gaps. The data from all organizations are summarized and
collected together even though there are differences in the data
from each organization. For example, JPL defines the
threshold LET as that value of LET where soft errors are first
Testing Approaches counted at fluences of 106 ions/cm2; Aerospace now defines
their LET threshold as occurring at that point where the
The experimental procedures, such as those used by JPL measured upset cross section is 0.01 times the measured
and The Aerospace Corporation, are evolutionary and are maximum cross section, CNES reports a threshold at 0.1 times
described in detail from time to time in December issues of the saturated cross section. JPL's definition virtually
IEEE Transactions on Nuclear Science (5,6) or in in-house guarantees no upset below threshold but results in an
reports. In general, procedures comply with the guidelines for overestimate of error rate if the cross section is erroneously
SEE testing set forth by the ASTM Fl.l 1 document (7). They assumed to be constant at all LETs greater than the threshold
also comply with a JEDEC 13.4 document in preparation, LET. Specifying a threshold LET at a fraction of the saturated
"Test Procedure for the Measurement of Single Event Effects cross section attempts to approximate the error rate better, but
in Semiconductor Devices from Heavy Ion Irradiation." it introduces an arbitrary factor (to account for the slope of the
cross section vs. LET) and an assumption that the saturated Some colleagues have commented that a measure of the
value is known and/or achieved with the highest LET test ions. shape of the cross sections vs. LET might be useful- such as
given by a tabulation of the Weibull parameters. Others point
The best way to calculate error rates is to use the full out that it may be more difficult to assure that such parameters
curve of cross section vs. LET, which may be available from are properly derived and applied than it is to calculate SEE
the parent test organization M , and integrate it over all angles rates directly from known (and readily available) experimental
and all ions of various LETs. But even this method, which cross sections.
involves the use of a computer, relies critically on what
assumptions are made about grazing ion impacts and the Program managers concerned with critical system
dimensions of the device cell's sensitive volume. reliability issues will ultimately need an appropriate set of
cross sectional data to assess statistical features and focus on
All data are presently divided into two tables. Table 1 specific answers. Ballpark estimates will also have a place,
has been revised to include all SEE (soft error) data for both however, by helping assure that expensive experiments are
MOS/CMOS and bipolar devices. Table 2 exhibits data for limited to only critical SEE issues.
"Latchup Tests Only". All data listed here represent a
substantial abbreviation and ignore statistical features
altogether. LET limits are for nominal effective values An Evaluation of SEE Data
without correction for degradation that can occur when an ion
traverses device overlayers. Gold data, in particular, are Microprocessors
seldom as damaging as one would expect on the basis of
nominal LET and such data are labeled when known, and Au
JPL tested a large body of SEE data for microprocessors
testing is usually not recommended. SEE tests use a dynamic this year, mostly with 16-bit and 32-bit capability. Soft error
nominal bias (often 4.5 or 5.0 V); latchup tests are usually
thresholds are consistently low for all high-capability
performed at the maximum value of the nominal bias range machines, with LET(th) ranging from approximately 1 to 10
(e.g. 5.5V) ~ a condition usually (but not always) enhancing MeV/(mg/cm2). Important exceptions are two 16-bit devices
the possibility of latchup. Reported data were taken at room
by Marconi (GEC-Plessey), using their well-established SEE-
temperature or ambient temperature; higher test temperature resistant SOS technology. Most microprocessors are not very
measurements may exist for some parts. In some instances, susceptible to latchup although there are exceptions (e.g. the
data on transients is noted, which may or may or may not
IDT R3000 and R3000A.) The Intel CHMOSIV technology is
impact electronics down the line. Hence, a system designer
marginally susceptible to latchup, whereas its earlier
interested in a specific part is again urged to contact the
CHMOSIII technology was not. There is a very large set of
appropriate test organization for further information.
data from ESA and Harris on the R3000 and R3000A RISC
developed by many manufacturers.
Users are cautioned that manufacturers (Appendix I
defines manufacturer abbreviations) may often change their
Questions raised last year regarding the best approach to
process, and resultant SEE susceptibility, without changing microprocessor testing remain open. The purists argue that
the part number or notifying tester organizations. Hence, a static testing of known registers in a known state is the best
test of flight parts is always a good policy.
approach to understanding SEE effects. JPL presently pursues
this view and has demonstrated that not all elements of a
Trends & Limitations microprocessor are equally SEE-susceptible. The pragmatists
claim that testing with dynamic programs (the more the better)
Trends and device comparisons in the recent data are will usually show that static tests provide an unrealistic worst
offered in the "Remarks" column of Tables 1 and 2 and in the case.
following section. However, the organized tabular format is
designed to facilitate comparisons. Special studies (such as
Some data taken by European groups at GANIL, the
variation of SEE response with temperature) or a comparison
higher-energy (10 to 100 MeV/amu) cyclotron in France, are
between high energy (GANIL) heavy ion data and that from
available. The results suggest that these ions, which are more
the lower energy Berkeley 88-inch cyclotron and BNL Van de
representative of interplanetary cosmic rays, are more
Graaff are beyond the scope of this presentation. In addition,
damaging than the familiar lower-energy (2 MeV/amu) ions
test data for the whole class of catastrophic failures of power
provided by Brookhaven's Van de Graaff and Berkeley's 88-
transistors, both MOSFET and bipolar, has recently been
inch cyclotron. Direct comparisons between energy regimes
organized by Nichols under a substantially different format are few.
It will also be observed in Table 1 that there are data for
sveiv^earail cwounturoululearss a«unidu ppriuoucesssssuorrss oorf vvaarriioouuss ttyyppeess,. Tl hneeyy hnaavv e
W JPL data, including more recent results, may be accessed direcdy similarly low soft error thresholds [< 10 MeV/(mg/cm2)] and
from JPL's computer data base, RADATA. varying latchup susceptibility.
Analop-to-Digital Converters (ADCs) and overheating may occur. Also presented are data for
GANIL which appears to have a devastating effect- including
There are several data sets for ADCs and data for two latchup in several devices with epi technology. Once again a
digital-to-analog converters (DACs). Much of the data were need to compare data on identical parts for both high energy
taken by JPL in a quest for the least SEE-susceptible 12-bit GANIL ions and lower-energy ions is manifest
ADC. The MAXIM devices were clear standouts in this
subcategory, but one observes that a completely hard ADC or JPL was able to employ Cf-252 usefully for the first
DAC is a rarity. This is one device type where knowledge of time- as a screen to reject some ADCs because of latchup. It
how the device ties in with the system is an all-important is cautioned, however, that Cf-252 can never be used to pass a
consideration in assessing its ultimate suitability. part for latchup because of the possibility that the fission ions
do not have adequate range to maintain an adequate LET
Static RAMs CSRAMs) while generating a funnel at the well-substrate junction.
There is much new data to add to the accumulation for Latchup observed by MIT-Lincoln Lab in the NSC
SRAMS-with device sizes up to 4 Mbits. All devices employ driver/receivers 26C31 & 26C32, a pair of linear devices, is
variations of CMOS technology this test period, and SOI and explained by Sferrino [9]. He notes that the chips have tri-
SOS offer markedly superior resistance to soft errors and stated digital outputs, comprising an npn and pnp transistor in
latchup. Epi technology (where the epi layer is less than -10 series- the familiar structure for latchup paths. This result
microns thick) is a good guarantee against latchup but offers suggests that other transistor arrangements, such as silicon -
no significant advantages against soft errors. A tendency controlled-rectifiers, may be susceptible to latchup.
toward stuck bits was observed in the 0.5 micron feature-size
Hitachi 4M SRAM.
Conclusions
Other RAMS
The new data presented here can be combined with data
ESA tested a large set of 4M DRAMs and observed a given in References (1, 2, 3 and 4) to develop certain
consistent very low soft error threshold typical of this device generalizations useful for protecting flight electronics from
function. Some non-volatile RAMs were tested- with two SEE. Hard technologies and unacceptably soft technologies
Ferroelectric RAMs (FRAMs) for the first time. Some can be flagged. In some instances, specific tested parts can be
bipolar and CMOS PROMs exhibited relatively high SEU taken as candidates for key functions- such as
thresholds, but one should note that PROMs are occasionally microprocessing or memory. As always with radiation test
susceptible to latchup. data, specific test data for qualified flight parts is
recommended for critical applications. Calculations of
accurate SEE rates will require the assistance of a computer
Gate Arrays & Bus Controllers code, a well-defined environment [in terms of flux vs. LET]
and a complete device characterization [cross section vs. LET
Several gate arrays, configured in different ways, were at the appropriate temperature.] Evaluation of catastrophic
tested. It is difficult to sort out the large variability in soft effects requires its own statistical treatment, in which flares
error threshold— even among devices made by the same are considered. The recent concern of JPL and others with
manufacturer. It is encouraging that no cases of latchup were power transistor burnout and single event gate rupture is
reported. beyond the scope of this compendium.
Latchup Data Acknowledgments
Tests for latchup only are much easier to set up than At JPL special thanks are due to Charles Barnes,
those designed to measure soft errors as well. Such data are Radiation Effects & Testing supervisor, and Mike O'Connor.
given separately in Table 2- primarily for devices with
different variations of CMOS technology. It has so far held The research described in this publication was carried out
true that bipolar devices will not latchup with heavy ions. by the Jet Propulsion Laboratory, California Institute of
However, latchup has occurred in bipolar devices when Technology, under a contract with the National Aeronautics
exposed to high intensity gamma pulses, and the requisite and Space Administration. Special thanks are also extended
pnpn parasitic structure exists. by all to Dr. Peter Thieberger and staff at the Brookhaven
National Laboratory Van de Graaff facility and to Dr. Claude
The LET thresholds listed in Table 2 are for latchup Lyneis, Peggy McMahan and staff at the Lawrence Berkeley
only, and cross section data is rarer because of the difficulty in Laboratory, 88-inch cyclotron facility- for their excellent
obtaining repeat measurements where catastrophic burnout support.
Appendix I - Manufacturer Abbreviations TOS Toshiba
TRW TRW Inc.
UTM United Technologies Microelectronics Center
ACT Actel Corp.
WAF Waferscale
ADA Advanced Analog
XIC Xicorlnc.
ADI Analog Devices Inc.
XIL XilinxCorp.
ALS Allied Signal
ZOR Zoran
ALT AlteraCorp.
ZYR Zyrel
AMD Advanced Microdevices Corp.
ATM Atmel
ATT American Tel & Tel
Appendix II-Test Organizations
BUB Burr-Brown Research
CRY Crystal Semiconductor Inc.
A The Aerospace Corporation; El Segundo, CA
CYP Cypress Corp.
BPS Boeing Physical Sciences Research Center, Seattle
DAT Datei
CLM Clemson University; Clemson, SC
DDC DDC ILC Data Device Corp.
CNES Centre National dEtudes Spatiales; Toulouse, France
EDI EDI Corp.
ESA European Space Agency- several facilities
FER Ferranti
GD General Dynamics
FUJ Fujitsu Ltd.
GDD NASA Goddard Space Flight Center, Greenbelt, MD
GEC GE
GE GETSCO, Philadelphia
HAR Harris Corp., Semiconductor Div.
HAR Harris Semiconductor, Melbourne, FL
HIT Hitachi Ltd.
HON Honeywell, Clearwater, FL
HON Honeywell Inc.
J Jet Propulsion Laboratory (JPL); Pasadena, CA
IBM IBM
JH John Hopkins Applied Physics Laboratory; Laurel,
IDT Integrated Device Technologies, Inc.
MD
INM INMOS Corporation
LIN Lincoln Laboratories, M. I. T.; Cambridge, MA
INT Intel Corp.
MMS Matra Marconi Space; Velizy, France
LDI Logic Devices Inc.
NASA NASA
LTC Linear Technology Corp.
NRL Naval Research Laboratories, Washington D.C.
LSI LSI Logic Corp.
R Rockwell International (Anaheim, CA)
MED Marconi Electronic Devices
SSS S-Cubed, San Diego
MCN Micron Technologies
TRW TRW Space and Defense Sector (Los Angeles, CA)
MIT Mitsubishi
MMI Monolithic Memories Inc.
MOT Motorola Semiconductor Products Inc.
Appendix III - Test Facilities
MPS Micro Power System
MTA Matra Harris SemiconductorMXM MAXIM
88-in. = 88-inch cyclotron, Lawrence Berkeley
NAT Natel Engineering
Laboratory
NEC Nippon Electric Corp.
BNL = Tandem Van de Graaff, Brookhaven National
NSC National Semiconductor Corp.
Laboratory, Long Island, NY
OWI Omni-Wave, Inc.
Cf-252 = A Cf-252 fission source
PFS Performance Semiconductor Corp.
ESA = European Space Agency-several sites
PLS Plessey Semiconductors
GANIL = Cyclotron for Heavy Ions; Caen, France
PMI Precision Monolithics, Inc.
HAR = Van de Graaff at Harwell, England
RAY Raytheon Co., Semiconductor Divison
IPN = Tandem Van de Graaff, Institut de Physique
RCA Radio Corporation of America
Nucleaire; Orsay, France
RTN Ramtron
UW = Tandem Van de Graaff, University of
SAM Samsung
Washington, Seattle
SEE Seiko
SEQ SEEQ Technology Inc.
SGN Signetics Corp.
SIE Siemens Inc.
References
SI. Silicon»
SIP Sipex
[1] D. K. Nichols, W. E. Price, W. A. Kolasinski, R. Koga, J. C.
SLG Silicon General
Pickel, J. T. Blandford, A. E. Waskiewicz, 'Trends in Parts
SNL Sandia National Laboratories
Susceptibility to Single Event Upset from Heavy Ions," IEEE Trans,
SNY Sony Corp. on Nuc. Sei., NS-32. No. 6,4189 (Dec. 1985)
SOR SOREP
TEL Teledyne Crystalonics [2] D. K. Nichols, L. S. Smith, W. E. Price, R. Koga, W. A.
TK Texas Instruments Inc. Kolasinski, "Recent Trends in Parts SEU Susceptibility from Heavy
TMS Thomson Military & Space, France Ions", IEEE Trans on Nuc. Sei., NS-34. No. 6,1332 (Dec. 1987)
[3] D. K. Nichols, L. S. (Ted) Smith, George A. Soli, R. Koga, W. A. [8] R. Koga, W. R. Chin, S. J. Hansel, S. D. Pmkerton, T. K. Tsubota,
Kolasinski, "Latest Trends in Parts SEP Susceptibility from Heavy "The Impact of ASIC Devices on the SEU Vulnerability of Space-
Ions," IEEE Trans, on Nuc. Sei., NS-36. No. 6,2388 (Dec. 1989) Borne Computers", Preprint, IEEE, Trans, on Nuc. Sei., NS-39. No. 6
(Dec. 1992)
[4] D. K. Nichols, L. S. Smith, H. R. Schwartz, G. Soli, K. Watson,
R. Koga, W. R. Crain, K. B. Crawford, S. J. Hansel and D. D. Lau, [9] Vince Sferrino, MIT Lincoln Lab, private communication.
"Update on Parts SEE Susceptibility from Heavy Ions," IEEE Trans,
on Nuc. Sei., NS-38. No. 6,1529 (Dec. 1991)
[5] R. Koga, W. A. Kolasinski, J.V. Osbom, J. H. Elder & R. Chitty, The research described in this publication was carried out by
"SEU Test Techniques..." IEEE Trans, on Nuc. Sei., NS-35. No. 6. the Jet Propulsion Laboratory, California Institute of Technology,
1638 (Dec. 1988) under a contract with the National Aeronautics and Space
Administration.
[6] D. K. Nichols, J. R. Coss, L. S. Smith, B. Rax, M. Huebner, K.
Watson, "Full Temperature Characterization of Two Microprocessor
Technologies", ibid p 1619 (Dec. 1988) Reference herein to any specific commercial product, process,
or service by trade name, trademark, manufacturer, or otherwise, does
[7] ASTM Designation: F 1192-90, "Standard Guide for the not constitute or imply its endorsement by the United States
Measurement of SEP Induced by Heavy Ion Irradiation of Semicon- Government or the Jet Propulsion Laboratory, California Institute of
ductor Devices" ASTM, 1919 Race St, Philadelphia, Pa. 19103 Technology.
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