Dominik Dannheim

42 Pages·2013·10.69 MB·English

by  Dominik Dannheim

Status of silicon detector R&D

for future Linear Colliders"
and "
CERN Linear Collider activities

"
LCUK meeting

September 3rd, 2013

Oxford"
"
"
Dominik Dannheim (CERN-LCD)"
Outline"
• Pixel-vertex-detector R&D"
• Silicon-tracking R&D"
• CERN LC activities beyond silicon"
• Focus on:"
• projects presented at LC workshops"
• projects with CERN involvement"
• References indicative & incomplete – apologies!"
September 3, 2013

LC Silicon R&D + CERN activities

2
ILC and CLIC machine environment"
ILC at 500 GeV" CLIC at 3 TeV"
L (cm-2s-1)" 2x1034" 6×1034"
BX separation" 554 ns" 0.5 ns"
drives timing"
#BX / train" 1312" 312"
requirements"
Train duration" 727 μs" 156 ns" for detectors "
Train repetition rate" 5 Hz" 50 Hz"
Duty cycle" 0.36%" 0.00078%"
very small beam sizes"
σ / σ (nm)" 474 / 6" ≈ 45 / 1"
x y
à high rates of e+e- and
σ (μm)" 300" 44"
z hadronic backgrounds"
ILC ESD-2012/2 / CLIC CDR"
200 ms / 20 ms"
ILC/CLIC
Not to scale !"
727 μs / 156 ns"
September 3, 2013

LC Silicon R&D + CERN activities

3
Vertex-detector requirements"
•  efficient tagging of heavy quarks through precise

determination of displaced vertices: 

"
⇥(d ) = a2 + b2 GeV2/(p2 sin3 �)
0

 ·
q a~5 µm, b~10-15 µm
" a 5µm b 15µm
� �
à  good single point resolution: σ ~3 μm"
SP b"
à  small pixels <~25x25 μm2, analog readout"
à  low material budget: X ⪅ 0.1-0.2% X / layer"
0
à  corresponds to ~100-200 μm Si, including supports, cables, cooling"
à  low-power ASICs (~50 mW/cm2) + gas-flow cooling

"
•  20-200 ms gaps between bunch trains à trigger-less readout, pulsed powering"
•  B = 4-5 T à Lorentz angle becomes important

"
•  few % maximum occupancy from beam-induced backgrounds"
•  moderate radiation exposure (~104 below LHC!):"
•  NIEL: < 1011 n /cm2/y"
eq
•  TID: < 1 kGy / year"
"
•  for CLIC: Time stamping with ~10 ns accuracy, to reject background"
"à high-resistivity sensors, fast readout"
September 3, 2013

LC Silicon R&D + CERN activities

4
Vertex-detector concepts for ILC + CLIC"
CLIC_ILD vertex region"
ILD & SiD detector concepts:"
•  systematic optimization of geometries:"
•  background occupancies"
•  detector performance"
•  barrel/endcap geometry"
•  3 double layers or 5 single layers"
•  R between 14 mm (SiD) and 29 mm (CLIC_ILD)"
i
•  beam pipes with conical sections"
SiD vertex and forward tracking region"
flavor-tagging"
performance"
mm"
mm"
September 3, 2013

LC Silicon R&D + CERN activities

5
Pixel-detector technologies"
Monolithic" 3D-integrated" Hybrid"
Examples" DEPFET, FPCCD, MAPS, SOI, MIT-LL, Tezzaron, Timepix3/CLICpix"
HV-CMOS" Ziptronix"
Technology" Specialised HEP Customized niche industry Industry standard processes

processes, r/o and processes, high density for readout; depleted high-res.
sensors integrated" interconnects btw. tiers" planar or 3D sensors"
Interconnect" Not needed" SLID, Micro bump bonding, Cu pillars"
granularity" down to 5 μm pixel size" ~25 μm pixel size"
Material budget" ~50 μm total thickness achieveable" ~50 μm sensor + ~50 μm r/o"
Depletion layer" partial" partial or full" full à large+fast signals"
timing" Coarse 
 Coarse or fast, depending Fast sparsified readout, 

(integrating sensor)" on implementation" ~ns time slicing possible"
R&D examples" ILC, ALICE, RHIC" ILC, HL-LHC" CLIC, ATLAS-IBL, HL-LHC"
September 3, 2013

LC Silicon R&D + CERN activities

6
LC pixel R&D examples"
Project" Technology" Target Groups"
experiments"
Mimosa" 
 ALICE, CBM, BES-3, IPHC Strasbourg"
fully integrated" ILD@ILC" "
CMOS MAPS"
Arachnid / Cherwell" generic vtx / tracking / Bristol, Birmingham,
Tower Jazz 0.18 um"
calo, ALICE ITS" Queen Mary, RAL,
Daresbury"
Chronopix" fully integrated " SiD@ILC" Oregon"
CMOS MAPS"
IBM 90 nm"
FPCCD" integrated sensor, separate ILD@ILC" KEK, Tohoku"
r/o, Hamamatsu CCDs"
DEPFET" integrated sensor," Belle II, ILD@ILC" Bonn, MPI Munich,
separate readout," Barcelona, Santander,
MPG-HLL DEPFET" others"
VIP2b / SDR / 3d integrated / SOI
 generic technology FNAL, KEK, OKI,
MAMBO4" Tezzaron + STM 130 nm," tests, Super-Belle, INFN, others"
MIT LL" SiD@ILC"
HV-CMOS CCPD" active sensor, 180 nm CMOS" HL-ATLAS, CLIC" Heidelberg, CERN,
CPPM, Bonn, Geneva"
CLICpix" hybrid r/o, 65 nm CMOS" CLIC, SiD@ILC" CERN"
September 3, 2013

LC Silicon R&D + CERN activities

7
Integrated r/o technology: Mimosa"
MIMOSA 32ter performance"
Monolithic Active Pixel Sensor (MAPS):"
•  integrated CMOS technology"
•  charge collection mainly through diffusion

"
MIMOSA chip family (IPHC Strasbourg)"
•  example: MIMOSA 32(ter)"
•  0.18 μm Tower-Jazz CIS process: "
•  18-40 μm epitaxial layer, 1-6 kΩcm"
•  in-pixel amplification & CDS

"
Proposal for ILC (√s=500 GeV) vertex detector:"
•  precision layer with 3 μm resolution, 

50 μs r/o time"
•  timing layer with 6 μm resolution, 

10 μs r/o time"
•  outer layers with 4 μm resolution, 

100 μs r/o time"
September 3, 2013

LC Silicon R&D + CERN activities

8
Integrated r/o technology: Arachnid/Cherwell"
Arachnid collaboration for CMOS devices: "
Birmingham, Bristol, Daresbury, DESY, QMUL, RAL
 INMAPS process"

"
Cherwell integrated MAPS low-noise pixel detector

for calorimetry, tracking, vertexing"
•  180 nm 4T CMOS process with INMAPS"
•  CDS, 12-bit ADC (at column base or in-pixel),

rolling shutter, 10 time slices storage"
•  power pulsing"
•  5 mm x 5 mm chip size"
•  25 – 50 μm pixel size"
Cherwell 2"
•  Cherwell 2 prototype for ALICE ITS upgrade"
•  Test beam at DESY in July 2013"
September 3, 2013

LC Silicon R&D + CERN activities

9
Semi-integrated technology: FPCCD"
Fine Pixel Charge-Coupled Device:"
FPCCD"
•  semi-integrated technology (separate r/o ASICs)"
"
m
•  5-10 μm pixel pitch (1010 px for ILD VTX!)"
m

6
•  ~15 μm depletion zone"
6 mm"
•  integrate over ILC bunch trains (no time stamps), 

r/o during gaps ~ 10 MPx/s

readout ASIC"
à background rejection by pattern recognition

"
"
•  operation at -40 oC in cryostat
 m
m
" 4
1
•  small and large prototypes built: 

50 μm thin wafer

14 mm"
6, 8, 12 μm pixel pitch"
"
Large prototype"
12 mm"
cryostat"
62 mm"
-40 oC"
September 3, 2013

LC Silicon R&D + CERN activities

10