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Distributed Power Amplifiers for RF and Microwave Communications PDF

441 Pages·2015·17.03 MB·English
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Distributed Power Amplifiers for RF and Microwave Communications For a listing of recent titles in the Artech House Microwave Library, turn to the back of this book. Distributed Power Amplifiers for RF and Microwave Communications Narendra KumarAndrei Grebennikov Library of Congress Cataloging-in-Publication DataA catalog record for this book is available from the U.S. Library of Congress British Library Cataloguing in Publication DataA catalog record for this book is available from the British Library. ISBN-13: 978-1-60807-831-8 Cover design by John Gomes © 2015 Artech House685 Canton St.Norwood, MA 02062 All rights reserved. Printed and bound in the United States of America. No part of this book may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying, recording, or by any information storage and retrieval system, without permission in writing from the publisher. All terms mentioned in this book that are known to be trademarks or service marks have been appropriately capitalized. Artech House cannot attest to the accuracy of this information. Use of a term in this book should not be regarded as affecting the validity of any trademark or service mark. 10 9 8 7 6 5 4 3 2 1 Contents Preface CHAPTER 1 Two-Port Network Parameters 1.1 Impedance, Admittance, and ABCD Matrices 1.2 Scattering Parameters 1.3 Conversions Between Two-Port Networks 1.4 Practical Two-Port Networks 1.4.1 Single-Element Networks 1.4.2 π- and T-Type Networks 1.5 Lumped Elements 1.5.1 Inductors 1.5.2 Capacitors 1.6 Transmission Lines 1.6.1 Basic Parameters 1.6.2 Microstrip Line 1.6.3 Coplanar Waveguide 1.7 Noise Figure References CHAPTER 2 Power Amplifier Design Fundamentals 2.1 Main Characteristics 2.2 Impedance Matching 2.3 Gain and Stability 2.4 Basic Classes of Operation 2.5 Nonlinear Active Device Models 2.5.1 LDMOSFETs 2.5.2 GaAs MESFETs and GaN HEMTs 2.5.3 Low-Voltage and High-Voltage HBTs 2.6 DC Biasing 2.7 Impedance Transformers and Power Combiners 2.8 Directional Couplers References CHAPTER 3 Overview of Broadband Power Amplifiers 3.1 Bode-Fano Criterion 3.2 Matching Networks with Lumped Elements 3.3 Matching Networks with Mixed Lumped and Distributed Elements 3.4 Matching Networks with Transmission Lines 3.5 Lossy Matching Circuits 3.6 Push-Pull and Balanced Power Amplifiers 3.6.1 Basic Push-Pull Configuration 3.6.2 Baluns 3.6.3 Balanced Power Amplifiers 3.7 Practical Broadband RF and Microwave Power Amplifiers References CHAPTER 4 Distributed Amplification Concept and Its Design Methodology 4.1 Concept of Distributed Amplification 4.2 Image Impedance Method 4.3 Theoretical Analysis of Distributed Amplification 4.3.1 Analytical Approach to Two-Port Theory 4.3.2 Analytical Approach to Admittance Theory 4.3.3 Analytical Approach to Wave Theory 4.4 Gain/Power-Bandwidth Trade-Off 4.5 Practical Design Methodology 4.5.1 Design Goal/Specifications 4.5.2 Device Selection 4.5.3 Theoretical Analysis (Zero-Order Analysis) 4.5.4 Analysis with VCCS and Cgd (First-Order Analysis) 4.5.5 DC Biasing Circuitry Design 4.5.6 Device Modeling of GaN HEMTs 4.5.7 Loading Device into Distributed Output Network 4.5.8 Synthesizing Distributed Input/Output Networks 4.5.9 Layout Design 4.5.10 Full-Wave Simulation/Layout Optimization References CHAPTER 5 Efficiency Analysis of Distributed Amplifiers 5.1 Efficiency Limitations of Distributed Amplifiers 5.2 Virtual Impedance Analysis Using Multicurrent Sources 5.3 Simulation Analysis of Efficiency Analysis 5.4 Design Example of High-Efficiency Distributed Amplifier 5.5 Broadband Impedance Transformer Design References CHAPTER 6 Stability Analysis of Distributed Amplifiers 6.1 Motivation for Conducting Stability Analyses 6.2 Method of Stability Analysis 6.2.1 K-Factor Stability of a Two-Port Network 6.2.2 Feedback and NDF Factor 6.2.3 Pole-Zero Identification Method 6.3 Analysis and Conditions of Stability in Distributed Amplifiers 6.4 Parametric Oscillation Detection in Distributed Amplifiers 6.4.1 Stability Analysis of Distributed Amplifiers 6.4.2 Circuit Stabilization Technique References CHAPTER 7 Implementation of Distributed Amplifiers 7.1 Vacuum-Tube Distributed Amplifier 7.2 Microwave GaAs FET Distributed Amplifiers 7.2.1 Basic Configuration with Microstrip Lines 7.2.2 Basic Configuration with Lumped Elements 7.2.3 Capacitive Coupling 7.3 Tapered Distributed Amplifier 7.4 Power Combining 7.5 Bandpass Configuration 7.6 Parallel and Series Feedback 7.7 Cascode Distributed Amplifiers 7.8 Extended Resonance Technique 7.9 Cascaded Distributed Amplifiers 7.10 Matrix Distributed Amplifiers 7.11 CMOS Distributed Amplifiers References CHAPTER 8 Distributed Power Amplifiers 8.1 Dual-Fed Distributed Power Amplifier 8.2 Tapered Termination Cascaded Distributed Power Amplifier 8.3 Vectorially Combined Distributed Power Amplifier 8.3.1 Overview of Vectorially Combined DPA with Load Pull Determination 8.3.2 Impedance Transformer Design via Real-Frequency Technique 8.4 Drain-Line High-Power Device Loading Compensation References About the Authors Index Preface The main objective of this book is to present all relevant information and comprehensive design methodologies for wideband amplifiers— specifically, distributed amplifiers in general and their main components in particular—in different RF and microwave applications including well- known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. This comprehensive book will be useful for lecturing to promote a systematic way of thinking with analytical calculations and practical verification of wideband amplifiers providing the link between theory and practice of RF and microwave distributed amplifiers. Therefore, this book is recommended to academicians, researchers, and professors, and provides good coverage to practicing designers and engineers because it contains numerous well- known and novel practical circuits, architectures, and theoretical approaches with a detailed description of their operational principles. Chapter 1 introduces basic two-port networks by describing the behavior of two-port parameters including impedance, admittance and ABD matrices, scattering parameters, conversion between two-port networks, and practical two-port circuits. Lumped elements, particularly inductors and capacitors, are also discussed. Monolithic implementation of lumped inductors and capacitors is usually required at microwave frequencies and for portable devices. Transmission-line theory is introduced and followed by design formulas; curves are given for several types of transmission lines including striplines, microstrip lines, slotlines, and coplanar waveguides. Noise phenomena such as noise figure, additive white noise, low-frequency fluctuations, and flicker noise are discussed at the end of the chapter. In Chapter 2, the design fundamentals of power amplifiers are presented. Design is generally a complicated procedure where it is necessary to provide simultaneously accurate active device modeling, effective impedance matching depending on the technical requirements and operating conditions, stability during operation, and simplicity in practical implementation. The main characteristics, principles, and impedance matching techniques are described. The quality of power amplifier designs is evaluated by determining the realized maximum power gain under stable operating conditions with minimum amplifier stages, and the requirement of linearity or high efficiency can be considered where it is needed. For stable operation, it is necessary to evaluate the operating frequency domains where the active device may be potentially unstable. To avoid parasitic oscillations, the stabilization circuit technique for different frequency domains (from low frequencies up to high frequencies close to the device transition frequencies) is discussed. The device bias conditions, which are generally different for linearity or efficiency improvement, depend on the power amplifier operating class and the type of active device. The basic classes, Classes A, AB, B, and C, of power amplifier operations are introduced, analyzed, and illustrated. All necessary steps to provide an accurate device modeling procedure, starting with the determination of a device’s small- signal equivalent circuit parameters, are described. A variety of nonlinear models for MOSFET, MESFET, HEMT, and BJT devices including HBTs, which are very attractive for modern monolithic microwave integrated circuits, are described. The procedure for designing for dc biasing is discussed and, finally, an overview of impedance transformers and power combiners and directional couplers is given. An overview of broadband power amplifiers is given in Chapter 3. The chapter begins with the Bode-Fano criterion, explaining about the bandwidth analysis of a broadband power amplifier. A matching circuit is crucial to providing maximum power transfer from one point to another point, in which transformation using lumped elements, mixed-lumped, and distributed elements will be discussed to give choices to designers trying to meet technical requirements. In addition, transformation with transmission lines and power amplifiers with lossy compensation networks are discussed in this chapter. Push-pull and balanced power amplifier topologies are discussed to give us an understanding of circuit principles and design implementation. At the end of the chapter, several practical broadband RF and microwave power amplifier topologies are introduced. Chapter 4 introduces the concept of distributed amplification by means of gain and the bandwidth product of an amplifier stage. The concept explains how the gain stages are connected such that their capacitances are isolated, yet the output currents still combine in an additive fashion. The resulting topology forms an artificial transmission line and is extended to an image impedance method. A theoretical analysis of the distributed amplifier is presented with several approaches (i.e., two-port, admittance, and wave theories). The approach via two-port theory considers only a unilateral small-signal transistor model. The admittance method is more general because there is no simplifying assumption regarding the transistor model. Finally, the wave theory method, which uses the normalized transmission matrix approach, has the advantage of displaying the traveling wave nature of a distributed amplifier. The gain/power-bandwidth trade-off is discussed to give an overview of the influence a simple bandpass amplifier circuit has over the bandwidth response. The design methodology for a practical distributed amplifier is presented, which provides guidelines for designers who desire to realize a distributed amplifier in a timely manner, without any tedious optimization at the board level. Layout design guidelines (PCB selection, full-wave simulation, layout optimization, via-hole simulation, and so forth) should be taken into consideration during the design stage. Chapter 5 introduces the limitations of the conventional distributed amplifier and an analytical approach for achieving high-efficiency performance in distributed amplifiers, where the multicurrent sources must be combined to a single load by presenting optimum virtual impedance to each current source. The systematic generalized design equations are given and a summary of the equations are presented in table form. Obviously, to keep the output impedance of the distributed amplifier closer to 50Ω (and to avoid additional impedance transformation), the magnitude and phase properties of the current source (or transistor) must be adjusted. The adjustment can be made according to the designer’s need, the complexity of the design circuit, and so forth. A few design examples of high-efficiency distributed amplifiers are discussed. A parallel coupled-line approach is adopted as a test vehicle for broadband impedance transformation purposes. As an important point, note that the design concept presented provides appropriate guidelines for maximizing the efficiency of a distributed amplifier. The basic principle and motivation for using stability analyses (with K- factor, feedback and NDF factor, and pole-zero identification methods) with the intent of understanding the strategies are discussed in Chapter 6. The pole-zero identification technique is applied to a distributed amplifier to provide an understanding of the origin of oscillation due to the multiple-loop nature. The analysis considers the distributed amplifier to be a basic feedback oscillator circuit; that is, a Hartley oscillator using a simplified transistor model. The origin of the distributed amplifier oscillation can be traced to the transconductance nature or multiple-loop nature of the feedback network. An explanation of odd-mode oscillation in a distributed amplifier topology is discussed, which is useful for practical applications. Large-signal stability analysis based on pole-zero identification is applied to analyze the parametric oscillations in high- efficiency distributed amplifiers. The parametric oscillation is correlated to a gain expansion phenomenon that directly affects the critical poles of the circuit. Large-signal stability analysis is then used to stabilize a high- efficiency distributed amplifier with a minimum impact on circuit performance. Chapter 7 introduces the design implementation of a distributed amplifier. A distributed amplifier overcomes the difficulty of conventional amplifiers by offering a broadband frequency response. The concept of a vacuum-tube distributed amplifier based on combining interelectrode capacitances with series wire inductors is discussed using an analytical approach. A distributed amplifier with a microwave GaAs FET, including configuration with microstrip lines, lumped elements, and capacitive coupling, is discussed. A tapered distributed amplifier offers high- efficiency performance and eliminates dummy termination. Other implementations of distributed amplifiers such as power combining, bandpass, and parallel and series feedback configurations are discussed. A cascade distributed amplifier topology minimizes the degeneration at higher frequencies, improves the isolation between inputs and outputs,

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