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CMOS VOLTAGE REFERENCES CMOS VOLTAGE REFERENCES AN ANALYTICAL AND PRACTICAL PERSPECTIVE Chi-WahKokandWing-ShanTam CanaanMicroelectronicsCorporationLtd,HongKong Thiseditionfirstpublished2013 (cid:2)C 2013JohnWiley&SonsSingaporePte.Ltd. Registeredoffice JohnWiley&SonsSingaporePte.Ltd.,1FusionopolisWalk,#07-01SolarisSouthTower,Singapore138628 Fordetailsofourglobaleditorialoffices,forcustomerservicesandforinformationabouthowtoapplyfor permissiontoreusethecopyrightmaterialinthisbookpleaseseeourwebsiteatwww.wiley.com. AllRightsReserved.Nopartofthispublicationmaybereproduced,storedinaretrievalsystemortransmitted,in anyformorbyanymeans,electronic,mechanical,photocopying,recording,scanning,orotherwise,exceptas expresslypermittedbylaw,withouteitherthepriorwrittenpermissionofthePublisher,orauthorizationthrough paymentoftheappropriatephotocopyfeetotheCopyrightClearanceCenter.Requestsforpermissionshouldbe addressedtothePublisher,JohnWiley&SonsSingaporePte.Ltd.,1FusionopolisWalk,#07-01SolarisSouth Tower,Singapore138628,tel:65-66438000,fax:65-66438008,email:[email protected]. Wileyalsopublishesitsbooksinavarietyofelectronicformats.Somecontentthatappearsinprintmaynotbe availableinelectronicbooks. Designationsusedbycompaniestodistinguishtheirproductsareoftenclaimedastrademarks.Allbrandnamesand productnamesusedinthisbookaretradenames,servicemarks,trademarksorregisteredtrademarksoftheir respectiveowners.ThePublisherisnotassociatedwithanyproductorvendormentionedinthisbook.This publicationisdesignedtoprovideaccurateandauthoritativeinformationinregardtothesubjectmattercovered.Itis soldontheunderstandingthatthePublisherisnotengagedinrenderingprofessionalservices.Ifprofessionaladvice orotherexpertassistanceisrequired,theservicesofacompetentprofessionalshouldbesought. LibraryofCongressCataloging-in-PublicationData CMOSvoltagereferences:ananalyticalandpracticalperspective/Chi-WahKok,Wing-ShanTam.–Firstedition. pagescm Includesbibliographicalreferencesandindex. ISBN978-1-118-27568-9(hardback) 1.Voltagereferences. 2.Electriccircuitanalysis. 3.Electriccircuits–Designandconstruction. I.Kok, Chi-Wah. II.Tam,Wing-Shan. III.Title:Voltagereference. TK454.C6282013 621.3815(cid:3)28–dc23 2012030274 ISBN:9781118275689 Setin10/12ptTimesbyAptaraInc.,NewDelhi,India CONTENTS AbouttheAuthors ix Preface xi Acknowledgements xiii Nomenclature xv 1 WarmUp 1 1.1 BipolarJunctionTransistors 2 1.1.1 DifferentialV 5 BE 1.2 Metal-OxideSemiconductorField-EffectTransistor 7 1.2.1 CutoffRegion 11 1.2.2 SubthresholdConduction 11 1.2.3 TriodeRegion 14 1.2.4 SaturationRegion 16 1.2.5 ThermalProperties 19 1.2.6 ChannelLengthModulationEffect 23 1.3 Diode 23 1.4 Resistor 25 1.4.1 DummyElement 27 1.4.2 GuardRing 27 1.4.3 SheetResistance 27 1.5 DeviceMatching 28 1.5.1 ApplicationofStatisticstoCircuitDesign 28 1.5.2 SystematicVariation 30 1.6 SimulationModelsforCircuitDesign 31 1.6.1 ProcessVariationandTypicalDesign 32 1.6.2 ProcessCorners 34 1.7 Noise 36 1.7.1 TypesofNoises 36 1.7.2 SumsandMultiplicationsofNoises 38 1.8 FabricationTechnology 39 1.9 BookOrganization 40 1.10 Exercises 42 References 46 vi Contents 2 VoltageReference 49 2.1 PerformanceMeasures 49 2.1.1 LineRegulation 51 2.1.2 TemperatureCoefficient 54 2.1.3 PowerSupplyRejectionRatio 56 2.1.4 QuiescentCurrent 59 2.1.5 OutputNoise 60 2.2 OtherDesignConsiderations 62 2.3 Summary 63 2.4 Exercises 65 References 70 3 BandgapVoltageReference 71 3.1 WidlarBandgapVoltageReferenceCircuit 71 3.2 DrainVoltageEqualizationCurrentMirror 74 3.2.1 OpampBasedβ-MultiplierBandgapVoltageReferenceCircuit 76 3.2.2 BandgapVoltageReferenceCircuit 77 3.3 MajorCircuitElements 81 3.3.1 OperationalAmplifier 81 3.3.2 CurrentMirror 86 3.3.3 StartupCircuit 88 3.3.4 ResistorNetwork 93 3.3.5 BipolarTransistor 94 3.4 CompleteLayout 95 3.5 Summary 95 3.6 Exercises 96 References 101 4 ErrorSourcesinBandgapVoltageReferenceCircuit 103 4.1 Non-IdealOpamp 103 4.1.1 InputOffsetVoltage 104 4.1.2 LimitedGainandPowerSupplyRejectionRatio 112 4.1.3 Noise 113 4.2 CurrentMirrorMismatch 114 4.2.1 ChannelLengthModulationEffectCompensation 116 4.2.2 CascodeCurrentMirror 117 4.3 BipolarTransistor 122 4.3.1 SizeVariation 122 4.3.2 SeriesBaseResistance 122 4.3.3 β Variation 125 4.4 ResistorVariation 126 4.5 PowerSupplyVariation 127 4.5.1 Pre-Regulation 132 4.6 OutputLoading 135 4.7 OutputNoise 138 4.8 VoltageReferenceCircuitTrimming 140 Contents vii 4.8.1 LinkedFuseResistorTrimming 141 4.8.2 ResistorTrimmingCircuitAnalysis 142 4.8.3 ModulatedTrimming 146 4.8.4 VoltageDomainTrimming 148 4.8.5 CurrentDomainTrimming 149 4.9 Summary 149 4.10 Exercises 151 References 161 ADVANCEDVOLTAGEREFERENCECIRCUITS 5 TemperatureCompensationTechniques 165 5.1 V −(cid:3)V Compensation 166 BE BE 5.1.1 BrokawBandgapVoltageReference 168 5.1.2 β-MultiplierV −(cid:3)V Compensation 170 BE BE 5.2 WidlarPTATCurrentSourceandV Compensation 175 BE 5.3 V BasedTemperatureCompensation 177 GS 5.3.1 V CurrentSource 178 GS 5.4 Summary 182 5.5 Exercises 183 References 189 6 Sub-1VVoltageReferenceCircuit 191 6.1 Sub-1VOutputStage 193 6.2 VoltageHeadroominOpampbasedβ-multiplierVoltageReferenceCircuit 195 6.2.1 OpampwithNMOSInputStage 197 6.2.2 LocalVoltageBoosting 198 6.2.3 LowV Transistor 198 th 6.2.4 Bulk-DrivenTransistors 199 6.3 Sub-1VBandgapVoltageReferencebyResistiveDivision 199 6.3.1 ResistiveDividedV 202 BE 6.3.2 IndependentBiasedResistiveDividedV 206 BE 6.4 PeakingCurrentSourceandV Compensation 209 BE 6.5 Weighted(cid:3)V Compensation 211 GS 6.6 Summary 214 6.7 Exercises 215 References 222 7 HighOrderCurvatureCorrection 223 7.1 CompensationOrder 224 7.2 SecondOrderTemperatureCompensation 228 7.2.1 SecondOrderCurrentSource 229 7.2.2 CurrentSubtraction 232 7.2.3 CurrentAddition 236 7.3 BJTCurrentSubtraction 238 7.4 PiecewiseLinearCompensation 240 viii Contents 7.5 SumandDifferenceofSourceswithSimilarTemperatureDependence 243 7.5.1 DifferenceofVoltageswithSimilarTemperatureDependence 244 7.5.2 SumofVoltageswithInvertedTemperatureDependence 245 7.5.3 Multi-thresholdVoltagesCurvatureCompensatedVoltage Reference 247 7.6 Summary 252 7.7 Exercises 253 References 257 8 CMOSVoltageReferencewithoutResistors 259 8.1 GenerationofWeightedPTATSourceByInverseFunctions 260 8.1.1 WeightedDifferentialCircuit 260 8.1.2 NegativeImpedanceConverter 262 8.2 ResistorlessVoltageandCurrentSources 265 8.2.1 ResistorlessVoltageSource 265 8.2.2 ResistorlessCurrentSource 266 8.3 FirstOrderCompensatedResistorlessBandgapVoltageReferenceCircuit 268 8.3.1 VoltageSummationBasedResistorlessReferenceCircuit 269 8.3.2 CurrentSummationBasedResistorlessReferenceCircuit 270 8.4 ResistorlessSub-BandgapReferenceCircuit 270 8.4.1 TheVoltageSummationApproach 271 8.4.2 CTATVoltageReduction 273 8.5 Summary 279 8.6 Exercises 280 References 281 A SPICEModelFile 283 B SPICENetlistofVoltageReferenceCircuit 287 Index 289 ABOUT THE AUTHORS Chi-WahKokwasborninHongKong.HewasgrantedaPhDdegreefromtheUniversityof WisconsinMadison.Since1992,hehasbeenworkingwithvarioussemiconductorcompanies, researchinstitutions,anduniversities,whichincludeAT&TLabsResearch,Holmdel,SONY U.S.ResearchLabs,StanfordUniversity,HongKongUniversityofScienceandTechnology, HongKongPolytechnicUniversity,CityUniversityofHongKong,LatticeSemiconductor,etc. In2006,hefoundedCanaanMicroelectronicsCorpLtd.,afablessICcompanywithproducts inmixedsignalICforconsumerelectronics.Dr.Kokembracesnewtechnologiestomeetthe fastchangingmarketrequirements.Hehasextensivelyappliedsignalprocessingtechniques toimprovethecircuittopologies,designs,andfabricationtechnologieswithinCanaan.This includestheapplicationofsemidefiniteprogrammingtocircuitdesignoptimization,abstract algebra in switched capacitor circuit topologies improvement, and nonlinear optimization methodstooptimizehighvoltageMOSFETlayoutandfabrication. Wing-Shan Tam was born in Hong Kong. She received her BEng degree in electronic engineering from The Chinese University of Hong Kong, MSc degree in electronic and information engineering from The Hong Kong Polytechnic University, and PhD degree in electronic engineering from the City University of Hong Kong in 2004, 2007, and 2011, respectively.Currently,sheistheEngineeringManagerofCanaanMicroelectronicsCorpLtd. Herresearchinterestsincludemixed-signalintegratedcircuitdesignfordataconversionand power-management. PREFACE This book has a genesis: It started as internal training material for engineers working in Canaan Microelectronics Corp. Ltd. It is also a monograph because it presents the outcome ofourresearchandteachingactivitiesinthefieldoftemperatureindependentcircuitdesign atboththeCanaanMicroelectronicsCorp.Ltd.andtheCityUniversityofHongKong.Many unpublishedworksareincludedinthisbook.Numerousdesignexamplesarealsopresented togetherwithdetaileddiscussionsondesignprinciples,performanceanalysis,andthepotential problemsofeachcircuittopology.Thisbookisintendedtobecoursematerialforseniorand graduate level courses, training material for engineers, and also a reference text for readers whoareworkinginthefieldoftemperatureindependentcircuitdesign. The book is divided into eight chapters. The first chapter offers an introduction of device physics focusing on the temperature properties of individual devices, which introduces just enough material for voltage reference circuit design and analysis. Details of general device physicsmaybegatheredfromexistingliterature,suchasthetextbooksbyChenmingC.Hu, (ModernSemiconductorDevicesforIntegratedCircuits,PrenticeHall,2010),andS.M.Sze, (PhysicsofSemiconductorDevices,Wiley,1969)thatofferdetaileddiscussionsonthedevice physicsforbipolartransistors,MOStransistors,andotherpassivecomponentsmanufacturedin theCMOSprocess.Besidesthephysics,towardstheendofChapter1,wealsodiscusspractical issuesinCMOScircuitdesign.Thedevicematchingproblemisintroduced.Computersimu- lationforcircuitdesignwithprocessvariationsisdiscussed.Finally,thedevicenoisemodels thatdescribethenoisesassociatedwithCMOSdevicesarepresented.Chapter2presentsthe performancecharacterizationofvoltagereferencecircuits.Thepresentedcharacterizationwill be used throughout the book in the analytical discussions and performance comparisons of individualvoltagereferencecircuits.Ageneralvoltagereferencecircuitframeworkofopamp basedβ-multiplierbandgapvoltagereferenceispresentedinChapter3.Thepresentedvoltage referencecircuitissiliconproven,andhasbeenappliedtoapowermanagementICofCanaan MicroelectronicsCorp.Ltd.:themicrographofthedieisshownonthefrontpageofthisbook. Everybuildingblockwithinthevoltagereferencecircuitisdiscussedanalyticallytogetherwith layout details. Various error sources of the circuit are identified, and analyzed in Chapter 4. Methodstoremedyeachproblemtogetherwiththeirprosandconsarediscussedindetailin Chapter4.ThebasicPTAT-CTATtemperaturecompensationtechniquediscussedinChapter4 will be extended to voltage reference circuits using various temperature dependent devices andtopologiesinChapter5.Analyticalderivationtodeterminethecomponentvaluesofeach devicewithinthevoltagereferencecircuit,togetherwiththeimportantdesignconsiderations of each circuit and topology will be discussed. Chapter 6 discusses the design of voltage xii Preface reference circuits with sub-1V supply, and voltage reference circuits with sub-1V reference voltage.Noticethatthedesignofthevoltagereferencecircuitwithasub-1Vreferencevoltage isdifferentfromthatofthevoltagereferencecircuitwithasub-1Vsupplyvoltage.Avoltage referencecircuitwithasub-1Vsupplyvoltageisalsoavoltagereferencecircuitwithasub-1V referencevoltage.Thevoltagereferencecircuitwithsub-1Vreferencevoltagebeingableto operatewithasub-1VsupplyvoltageisimportantinmodernCMOScircuitdesignwherethe supply voltage keeps reducing for power reduction and silicon size shrinkage. A number of sub-1Vvoltagereferencecircuitswillbediscussedinthischapter. High order curvature compensated voltage reference circuits are presented in Chapter 7, which are important to applications that require a reference voltage with low temperature sensitivity. A number of high accuracy voltage reference circuit topologies, including high ordercurvaturecompensation,invertedtemperaturecompensation,andpiecewisetemperature compensation etc. are discussed. This book concludes in Chapter 8 with a discussion on a type of special voltage reference circuit that does not require resistors. Such a voltage reference circuit has the advantage of compact layout. The performance of a resistor free voltagereferencecircuitcanbefurtheroptimizedwithapplicationsofpiecewisetemperature compensation technique to lower the temperature sensitivity of the circuit. Post-fabrication trimmingcircuitsarediscussedtoreducethereferencevoltagevariation. A detailed summary of the state of the art development with respect to the topic of each chapter is presented in the “Summary” section of each chapter. Homework problems are presentedinthe“Exercise”sectioninindividualchapter.Thehomeworkincludesbothanalytic problems,andSPICEbasedcomputersimulationexercises.Whiletheprocessparametersused inthisbookandalsoindevelopingtheexercisesmaynotbethesameasthoseinyourinstitution, itisourhopethattheexerciseswillprovideyouwithgeneralguidelines,analysis,designand layoutexperienceforthedesignofthevoltagereferencecircuitswiththehelpofSPICE.The experience will further address the performance evaluation of the voltage reference circuit whichwillhelpyoutoachieveathoroughconsiderationofthevoltagereferencecircuitbefore theactualdesign. Thedevelopmentofvoltagereferencecircuitsisstillcontinuingandthereforeabook,such as this one, cannot be definitive or complete. It is hoped, however, that this book will fill an important gap; students embarking upon mixed-signal circuit design should be able to learn sufficient basics before tackling journal papers, researchers and engineers in the field oftemperatureindependent/dependent circuitdesignshouldbeabletouseitasreferenceto assist their circuit design tasks, and current researchers in the field should be able to get a broad perspective on what has been achieved. The subject area is introduced, some major developments are recorded, and enough successes as well as challenges are noted here for readerstolookintoothervoltageindependent/dependentcircuitdesignproblemsandgenerate solutionsfortheirownproblems. Chi-WahKokandWing-ShanTam February2012

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