Applied Surface Science 1995: Vol 91 Index

21 Pages·1995·6.3 MB·English

surface science
ELSEVIER Applied Surface Science 91 (1995) 388-392
Author index
Adamiec, M., see Zaborowski, M. 91 (1995) 246 Bocelli, S., G. Guizzetti, F. Marabelli, G.
Adamik, M., see Manaila, R. 91 (1995) 295 Thungstroém and C.S. Petersson, Experi-
Affronte, M., see Gottlieb, U. 91 (1995) 82 mental identification of the optical
Affronte, M., O. Laborde, U. Gottlieb, O. phonon of CoSi, in the infrared 91 (1995) 30
Thomas and R. Madar, Angular depen- Bourhila, N., N. Thomas, J. Palleau, J. Tor-
dence of the magnetoresistance of TiSi, res, C. Bernard and R. Madar, Thermo-
single crystals 91 (1995) 98 dynamic and experimental study of Cu-
Ahrens, C., D. Depta, F. Schitthelm and S. LPCVD by reduction of copper chloride 91 (1995) 175
Wilhelm, Electrical characterization of Bouziane, K., see Mamor, M. 91 (1995) 342
conductive and non-conductive barrier Boyen, H.-G., see Kilper, R. 91 (1995) 93
layers for Cu-metallization 91 (1995) 285 Braud, F., see Mouche, M.-J. 91 (1995) 129
Aochi, H., see Kiicher, P. 91 (1995) 359 Braud, F., J. Torres, J. Palleau, J.L. Mermet
Augur, R.A., see Kordic, S. 91 (1995) 197 and M.J. Mouche, Ti-diffusion barrier in
Cu-based metallization 91 (1995) 251
Breternitz, V., see Nennewitz, O. 91 (1995) 347
Bacchetta, M., C. Zaccherini and L. Zanotti, Brijs, B., see Donaton, R.A. 91 (1995) 77
Inter-metal dielectric planarization pro- Brown, W.L., see Weber, A. 91 (1995) 314
cess for 0.35 ym multilevel intercon-
nection devices 91 (1995) 367 Calegari, C., see Sanguinetti, S. 91 (1995) 103
Bachli, A., see Dutron, A.-M. 91 (1995) 277 Caymax, M., see Donaton, R.A. 91,1995) 77
Bar, E. and J. Lorenz, 3D simulation of Chaix-Pluchery, O., F. Genet, G. Lucazeau
tungsten low-pressure chemical vapor and R. Madar, Raman study of tetrago-
deposition in contact holes 91 (19953)2 1 nal tungsten disilicide 91 (1995) 68
Barcz, A., see Zaborowski, M. 91 (19952)3 9 Chapljuk, V.I., see Gusev, I.V. 91 (1995) 182
Barcz, A., see Zaborowski, M. 91 (19952)4 6 Charatan, R.M., see Weber, A. 91 (1995) 314
Barna, P.B., see Manaila, R. 91 (1995) 295 Corni, F., C. Nobili, G. Ottaviani, R. Tonini,
Barrett, J., see Patterson, J.C. 91 (19951)2 4 B. Grignaffini Gregorio and G. Queir-
Baumann, J., see Kaufmann, C. 91 (19952)9 1 olo, Metallurgical and electrical investi-
Beechinor, J.T., see O’Reilly, M. 91 (19951)5 2 gation of Pt; Nig, /silicon interactions 91 (1995) 107
Belevsky, V.P., see Gusev, I.V. 91 (19951)8 2 Cossy-Favre, A., see Kilper, R. 91 (1995) 93
Belu-Marian, A., M.D. Serbanescu, R. Craciun, S., see Manaila, R. 91 (1995) 295
Manaila and A. Devenyi, Ni silicides Crean, G.M., see Patterson, J.C. 91 (1995) 124
formation and properties in RF sputtered Crean, G.M., see O’Reilly, M. 91 (1995) 152
Nijyo—,—Si, thin films 91 (1995) 63 Crecelius, G., K. Radermacher, Ch. Dieker
Bender, H., see Donaton, R.A. 91 (1995) 77 and S. Mesters, Beam induced phase
Bernard, C., see Pons, M. 91 (1995) 34 transformations and self annealing in
Bernard, C., see Bourhila, N. 91 (1995) 175 as-implanted iron silicides 91 (1995) 50
Bernard, C., see Dutron, A.-M. 91 (1995) 277 Cuthbertson, A., see Stevens, R. 91 (1995) 208
Bertz, A., T. Werner, N. Hille and T. Gess-
ner, Effects of the biasing frequency on Degroote, S., see Vantomme, A. 91 (1995) 24
RIE of Cu in a Cl,-based discharge 91 (1995) 147 Degroote, S., A. Vantomme, J. Dekoster
Beyer, C., see Stegemann, K.-H. 91 (1995) 308 and G. Langouche, Cubic metastable
Biro, D., see Manaila, R. 91 (1995) 295 FeSi,_, epitaxially grown on Si and
Bischoff, L., see Teichert, J. 91 (1995) 44 MgO substrates 91 (1995) 72
Blanquet, E., see Dutron, A.-M. 91 (1995) 277 Dekoster, J., see Vantomme, A. 91 (1995) 24
Author index 389
Dekoster, J., see Degroote, S. 91 (1995) 72 Grignaffini Gregorio, B., see Corni, F. 91 (19951)0 7
Depta, D., see Ahrens, C. 91 (19952)8 5 Gross, M.E., see Weber, A. 91 (19953)1 4
Depta, D., see Kahler, J.D. 91 (1995) 339 Griinewald, W., see Schulz, S.E. 91 (1995) 326
Devenyi, A., see Belu-Marian, A. 91 (1995) 63 Guizzetti, G., see Bocelli, S. 91 (1995) 30
Devenyi, A., see Manaila, R. 91 (19952)9 5 Gusev, I.V., A.A. Mohnjuk, V.I. Chapljuk
Deweerdt, B., see Lauwers, A. 91 (1995) 12 and V.P. Belevsky, Some particular fea-
Deweerdt, B., see Jonckx, F. 91 (19953)7 8 tures of the condensation process, struc-
Dieker, Ch., see Crecelius, G. 91 (1995) 50 ture and properties of thin metal films
Dirks, A.G., see Kordic, S. 91 (19951)9 7 caused by self-ion bombardment 91 (1995) 182
Donaton, R.A., S. Kolodinski, M. Caymax,
P. Roussel, H. Bender, B. Brijs and K.
Hagena, O.F., see Gatz, P. 91 (1995) 169
Maex, Formation of CoSi, on strained
Hain, M., H. K6rner, B. Neureither and S.
Sip. gGey. using a sacrificial Si layer 91 (1995) 77
Rohl, A highly reliable, low cost 0.5
Drescher, K., see Stavreva, Z. 91 (1995) 192
pm three level tungsten metallization 91 (1995) 374
Drescher, K., see Stavrev, M. 91 (1995) 257
Hasegawa, M., see Fukada, T. 91 (19952)2 7
Drescher, K., see Vogt, M. 91 (1995) 303
Hasse, W., see Weide, K. 91 (1995) 234
Dufour-Gergam, E., see Mamor, M. 91 (1995) 342
Haussler, P., see Teichert, S. 91 (1995) 56
Dutron, A.-M., E. Blanquet, C. Bernard, A.
Haussler, P., see Kilper, R. 91 (1995) 93
Bachli and R. Madar, LPCVD Re, Si ,N,
Heinen, R., see Griafe, A. 91 (1995) 187
diffusion barriers in Si/SiO,/Cu metal-
Heinig, V., see Stegemann, K.-H. 91 (1995) 308
lizations 91 (1995) 277
Henrion, W., see Teichert, S. 91 (1995) 56
Herz, K. and M. Powalla, Electrical and
Erben, J., see Teichert, S. 91 (1995) 56 optical properties of thin B-FeSi, films
on Al,O, substrates 91 (1995) 87
Ferretti, R., see Kahler, J.D. 91 (1995) 339 Hesse, E., see Teichert, J. 91 (1995) 44
Fiedler, O., see Schulz, S.E. 91 (19953)2 6 Hille, N., see Bertz, A. 91 (1995) 147
Finkman, L., see Mamor, M. 91 (19953)4 2 Hintze, B., see Schulz, S.E. 91 (1995) 326
Fontaine, G., see Stegemann, K.-H. 91 (19953)0 8
Franke, Th., see Teichert, S. 91 (1995) 56
Intemann, A., see Ruhl, G. 91 (1995) 382
Franke, Th., see Kilper, R. 91 (1995) 93
Froschle, B., see Ruhl, G. 91 (1995) 382
Fukada, T., T. Mori, Y. Toyoda, M. Janssen, G.C.A.M., see Jongste, J.F. 91 (1995) 162
Hasegawa, K. Namba and K. Ogata, Janssen, G.C.A.M., see Leusink, G.J. 91 (1995) 215
Electromigration resistance of TiWN/ Jiang, X., see Patterson, J.C. 91 (1995) 124
Cu/TiWN interconnections 91 (1995) 227 Jiang, X., see O’Reilly, M. 91 (1995) 152
Jonckx, F., R. Verbeeck, B. Deweerdt and
Gambino, J., see Kiicher, P. 91 (1995) 359 K. Maex, On the formation of silicides
Gatz, P. and O.F. Hagena, Cluster beams on poly runners with topography by a
for metallization of microstructured sur- two-step silicidation process 91 (1995) 378
faces 91 (19951)6 9 Jongste, J.F., T.G.M. Oosterlaken, G.J.
Gawlik, G., see Zaborowski, M. 91 (19952)3 9 Leusink, C.A. van der Jeugd, G.C.A.M.
Genet, F., see Chaix-Pluchery, O. 91 (1995) 68 Janssen and S. Radelaar, Influence of
Gessner, T., see Teichert, J. 91 (1995) 44 mixed reductants on the growth rate of
Gessner, T., see Rober, J. 91 (19951)3 4 WE,-based W-CVD 91 (1995) 162
Gessner, T., see Bertz, A. 91 (1995) 147 Jongste, J.F., see Leusink, G.J. 91 (1995) 215
Gessner, T., see Kaufmann, C. 91 (19952)9 1
Gessner, T., see Schulz, S.E. 91 (19953)2 6 Kahler, J.D., D. Depta and R. Ferretti, Se-
Gessner, T., see Wolf, H. 91 (19953)3 2 lective deposition of tungsten on ITM-
Gottlieb, U., M. Affronte, F. Nava, O. CoSi, 91 (1995) 339
Laborde, A. Sulpice and R. Madar, Some Kaufmann, C., see Rober, J. 91 (1995) 134
physical properties of ReSi,7 , single Kaufmann, C., J. Baumann, T. Gessner, T.
crystals 91 (1995) 82 Raschke, M. Rennau and N. Zichner,
Gottlieb, U., see Affronte, M. 91 (1995) 98 Electrical characterization of reactively
Grafe, A., R. Heinen, F. Klein, Th. Kruck, sputtered TiN diffusion barrier layers
M. Scherer and M. Schober, Precursor for copper metallization 91 (1995) 291
development for the chemical vapor de- Kilper, R., see Teichert, S. 91 (1995) 56
position of aluminium, copper and palla- Kilper, R., St. Teichert, Th. Franke, P.
dium 91 (1995) 187 Haussler, H.-G. Boyen, A. Cossy-Favre
390 Author index
and P. Oelhafen, Photoelectron spectro- Manaila, R., D. Biro, P.B. Barna, M.
scopic investigations of thin Fe ,Sij;o9_, Adamik, F. Zavaliche, S. Craciun and
films 91 (1995) 93 A. Devenyi, Ti nitride phases in thin
Klages, C.-P., see Weber, A. 91 (1995) 314 films deposited by DC magnetron sput-
Klein, F., see Grafe, A. 91 (1995) 187 tering 91 (1995) 295
Kolodinski, S., see Donaton, R.A. 91 (1995) 77 Marabelli, F., see Bocelli, S. 91 (1995) 30
Kordic, S., R.A. Augur, A.G. Dirks and Marangon, M.S., G. Queirolo and C. Savoia,
R.A.M. Wolters, Stress voiding and Nucleation and growth of CVD-W on
electromigration phenomena in alu- TiN studied by X-ray fluorescence spec-
minum alloys 91 (1995) 197 trometry 91 (19951)5 7
Korner, H., see Hain, M. 91 (1995) 374 Matsuda, T., see Kiicher, P. 91 (1995) 359
Kruck, Th., see Grafe, A. 91 (1995) 187 Mermet, J.-L., see Mouche, M.-J. 91 (19951)2 9
Kiicher, P., H. Aochi, J. Gambino, T. Li- Mermet, J.-L., see Braud, F. 91 (19952)5 1
cata, T. Matsuda, S. Nguyen, M. Mesters, S., see Crecelius, G. 91 (1995) 50
Okazaki, H. Palm and M. Ronay, Ad- Meyer, F., see Mamor, M. 91 (19953)4 2
vanced metallization technology for Meynen, H., see Stevens, R. 91 (19952)0 8
256M DRAM 91 (1995) 359 Miglio, L., see Sanguinetti, S. 91 (19951)0 3
Kuznetsov, V.S., see Zimin, S.P. 91 (1995) 355 Mohnjuk, A.A., see Gusev, I.V. 91 (19951)8 2
Moller, A., see Stavrev, M. 91 (19952)5 7
Mori, T., see Fukada, T. 91 (19952)2 7
Laborde, O., see Gottlieb, U. 91 (1995) 82
Mouche, M.-J., J.-L. Mermet, F. Pires, E.
Laborde, O., see Affronte, M. 91 (1995) 98
Richard, J. Torres, J. Palleau and F.
Lange, H., see Teichert, S. 91 (1995) 56
Braud, Process optimization of copper
Langouche, G., see Vantomme, A. 91 (1995) 24
MOCVD using modeling experimental
Langouche, G., see Degroote, S. 91 (1995) 72
design 91 (1995) 129
Lauwers, A., Q.F. Wang, B. Deweerdt and
Mouche, M.-J., see Braud, F. 91 (1995) 251
K. Maex, Ti/Co bilayers in salicide
technology: electrical evaluation 91 (1995) 12
La Via, F., see Ravesi, S. 91 (1995) 19 Namba, K., see Fukada, T. 91 (1995) 227
Leusink, G.J., see Jongste, J.F. 91 (1995) 162 Nava, F., see Gottlieb, U. 91 (1995) 82
Leusink, G.J., J.P. Lokker, M.J.C. van den Nennewitz, O., L. Spiess and V. Breternitz,
Homberg, J.F. Jongste, T.G.M. Ooster- Ohmic contacts to p-type 6H-silicon car-
laken, G.C.A.M. Janssen and S. Rade- bide 91 (1995) 347
laar, Stress in Al, AlSiCu, and AlVPd Neureither, B., see Hain, M. 91 (1995) 374
films on oxidized Si substrates 91 (19952)1 5 Nguyen, S., see Kiicher, P. 91 (1995) 359
Licata, T., see Kiicher, P. 91 (19953)5 9 Nicolet, M.-A., Ternary amorphous metallic
Lobner, B., see Teichert, J. 91 (1995) 44 thin films as diffusion barriers for Cu
Lokker, J.P., see Leusink, G.J. 91 (19952)1 5 metallization 91 (1995) 269
Lorenz, J., see Bar, E. 91 (19953)2 1 Ni Dheasuna, C., see Patterson, J.C. 91 (1995) 124
Lucazeau, G., see Chaix-Pluchery, O. 91 (1995) 68 Ni Dheasuna, C., see O’Reilly, M. 91 (1995) 152
Lynch, S., see O’Reilly, M. 91 (1995) 152 Nikulski, R., see Weber, A. 91 (1995) 314
Nobili, C., see Corni, F. 91 (1995) 107
Madar, R., see Pons, M. 91 (1995) 34
Madar, R., see Chaix-Pluchery, O. 91 (1995) 68 Oelhafen, P., see Kilper, R. 91 (1995) 93
Madar, R., see Gottlieb, U. 91 (1995) 82 Ogata, K., see Fukada, T. 91 (1995) 227
Madar, R., see Affronte, M. 91 (1995) 98 Ohba, T., Advanced multilevel metallization
Madar, R., see Bourhila, N. 91 (19951)7 5 technology 91(1995) 1
Madar, R., see Dutron, A.-M. 91 (1995) 277 Okazaki, M., see Kiicher, P. 91 (19953)5 9
Maex, K., see Lauwers, A. 91 (1995) 12 Oosterlaken, T.G.M., see Jongste, J.F. 91 (19951)6 2
Maex, K., see Donaton, R.A. 91 (1995) 77 Oosterlaken, T.G.M., see Leusink, G.J. 91 (1995) 215
Maex, K., see Stevens, R. 91 (1995) 208 Opilan, R.L., see Weber, A. 91 (1995) 314
Maex, K., see Jonckx, F. 91 (1995) 378 O’Reilly, M., see Patterson, J.C. 91 (1995) 124
Mamor, M., E. Dufour-Gergam, L. Fink- O’Reilly, M., X. Jiang, J.T. Beechinor, S.
man, G. Tremblay, F. Meyer and K. Lynch, C. Ni Dheasuna, J.C. Patterson
Bouziane, W /Si Schottky diodes: effect and G.M. Crean, Investigation of the
of sputtering deposition conditions on oxidation behaviour of thin film and
the barrier height 91 (1995) 342 bulk copper 91 (1995) 152
Manaila, R., see Belu-Marian, A. 91 (1995) 63 Ottaviani, G., see Corni, F. 91 (1995) 107
Author index
Palleau, J., see Mouche, M.-J. 91 (19951)2 9 Sade, G. and J. Pelleg, Co-sputtered TiB,
Palleau, J., see Bourhila, N. 91 (19951)7 5 as a diffusion barrier for advanced mi-
Palleau, J., see Braud, F. 91 (19952)5 1 croelectronics with Cu metallization 91 (1995) 263
Palm, H., see Kiicher, P. 91 (19953)5 9 Sanguinetti, S., C. Calegari and L. Miglio,
Palorec, J., see Stegemann, K.-H. 91 (19953)0 8 Phonon dispersion relations of metallic
Pamler, W., see Ruhl, G. 91 (19953)8 2 NiSi, and CoSi, by semi-empirical
Panknin, D., see Teichert, J. 91 (1995) 44 tight-binding calculation 91 (1995) 103
Panknin, D., see Teichert, S. 91 (1995) 56 Savoia, C., see Marangon, M.S. 91 (19951)5 7
Patterson, J.C., C. Ni Dheasuna, J. Barrett, Scherer, M., see Grafe, A. 91 (19951)8 7
T.R. Spalding, M. O’Reilly, X. Jiang Schitthelm, F., see Ahrens, C. 91 (19952)8 5
and G.M. Crean, Electroless copper Schmidt, N.M., see Remenyuk, A.D. 91 (19953)5 2
metallisation of titanium nitride 91 (19951)2 4 Schneider, P., see Teichert, J. 91 (1995) 44
Patterson, J.C., see O’ Reilly, M. 91 (19951)5 2 Schober, M., see Griafe, A. 91 (19951)8 7
Pelleg, J., see Sade, G. 91 (19952)6 3 Schulz, S.E., B. Hintze, W. Griinewald, O.
Petersson, C.S., see Bocelli, S. 91 (1995) 30 Fiedler and T. Gessner, Evaluation of
Pires, F., see Mouche, M.-J. 91 (19951)2 9 selective tungsten plugs on TiN, W and
Plotner, M., see Stavreva, Z. 91 (19951)9 2 AISi by analytical and electrical mea-
Pons, M., C. Bernard, H. Rouch and R. surements 91 (1995) 326
Madar, The modelling routes for the Schulz, S.E., see Wolf, H. 91 (1995) 332
chemical vapour deposition process: ap- Serbanescu, M.D., see Belu-Marian, A. 91 (1995) 63
plication to Si,_ ,Ge, deposition 91 (1995) 34 Shingubara, S., I. Utsunomiya and T. Taka-
Powalla, M., see Herz, K. 91 (1995) 87 hagi, Interaction of a void and a grain
Prokaznikov, A.V., see Zimin, S.P. 91 (1995) 355 boundary under a high electric current
stress employing three-dimensional
molecular dynamics simulation 91 (1995) 220
Queirolo, G., see Corni, F. 91 (1995) 107
Spalding, T.R., see Patterson, J.C. 91 (1995) 124
Queirolo, G., see Marangon, M.S. 91 (1995) 157
Spiess, L., see Nennewitz, O. 91 (1995) 347
Spinella, C., see Ravesi, S. 91 (1995) 19
Radelaar, S., see Jongste, J.F. 91 (1995) 162 Stavrev, M., C. Wenzel, A. Moller and K.
Radelaar, S., see Leusink, G.J. 91 (1995) 215 Drescher, Sputtering of tantalum-based
Radermacher, K., see Crecelius, G. 91 (1995) 50 diffusion barriers in Si/Cu metalliza-
Raineri, V., see Ravesi, S. 91 (1995) 19 tion: effects of gas pressure and compo-
Ramm, P., see Ruhl, G. 91 (19953)8 2 sition 91 (1995) 257
Rangelow, I.W., see Zaborowski, M. 91 (19952)3 9 Stavreva, Z., D. Zeidler, M. Plétner and K.
Raschke, T., see Kaufmann, C. 91 (19952)9 1 Drescher, Chemical mechanical polish-
Ravesi, S., F. La Via, V. Raineri and C. ing of copper for multilevel metalliza-
Spinella, Improved thermal stability of tion 91 (1995) 192
cobalt silicide formed by ion beam as- Stegemann, K.-H., V. Heinig, G. Fontaine,
sisted deposition on polysilicon 91 (1995) 19 J. Palorec and C. Beyer, Integration of a
Remenyuk, A.D. and N.M. Schmidt, The TiN barrier layer formed by rapid ther-
ohmic contact to the silicon Schottky mal annealing in a | ~m CMOS process 91 (1995) 308
barrier using vanadium silicide and gold Steinbriichel, C., Patterning of copper for
or silver metallization 91 (1995) 352 multilevel metallization: reactive ion
Rennau, M., see Kaufmann, C. 91 (1995) 291 etching and chemical—mechanical pol-
Richard, E., see Mouche, M.-J. 91 (1995) 129 ishing 91 (1995) 139
Rober, J., C. Kaufmann and T. Gessner, Stevens, R., A. Witvrouw, Ph.J. Roussel, K.
Structure and electrical properties of thin Maex, H. Meynen and A. Cuthbertson,
copper films deposited by MOCVD 91 (1995) 134 Influence of the anti reflective coating
Rohl, S., see Hain, M. 91 (19953)7 4 on the electromigration resistance of 0.5
Ronay, M., see Kiicher, P. 91 (19953)5 9 um technology metal-2 line structures 91 (1995) 208
Rouch, H., see Pons, M. 91 (1995) 34 Streiter, R., see Wolf, H. 91 (1995) 332
Roussel, Ph.J., see Donaton, R.A. 91 (1995) 77 Sulpice, A., see Gottlieb, U. 91 (1995) 82
Roussel, Ph.J., see Stevens, R. 91 (19952)0 8
Ruhl, G., B. Fréschle, P. Ramm, A. Inte-
mann and W. Pamler, Deposition of tita- Takahagi, T., see Shingubara, S. 91 (1995) 220
nium nitride /tungsten layers for appli- Teichert, J., L. Bischoff, E. Hesse, P.
cation in vertically integrated circuits Schneider, D. Panknin, T. Gessner, B.
technology 91 (1995) 382 Lébner and N. Zichner, Comparison of
392 Author index
CoSi, interconnection lines on crys- Wang, Q.F., see Lauwers, A. 91 (1995) 12
talline and noncrystalline silicon fabri- Weber, A., R. Nikulski, C.-P. Klages, M.E.
cated by writing focused ion beam im- Gross, R.M. Charatan, R.L. Opilan and
plantation 91 (1995) 44 W.L. Brown, Aspects of TiN and Ti
Teichert, St., R. Kilper, T. Franke, J. Erben, deposition in an ECR plasma enhanced
P. Haussler, W. Henrion, H. Lange and CVD process 91 (1995) 314
D. Panknin, Electrical and optical prop- Weide, K., J. Ullmann and W. Hasse, Model
erties of thin Fe,_ ,Co,Si, films 91 (1995) 56 calculations on a bipolar transistor emit-
Teichert, St., see Kilper, R. 91 (1995) 93 ter interconnection with different con-
Thomas, N., see Bourhila, N. 91 (1995) 175 tact shapes 91 (1995) 234
Thomas, O., see Affronte, M. 91 (1995) 98 Wenzel, C., see Stavrev, M. 91 (1995) 257
Thungstrém, G., see Bocelli, S. 91 (1995) 30 Werner, T., see Bertz, A. 91 (1995) 147
Tonini, R., see Corni, F. 91 (19951)0 7 Wilhelm, S., see Ahrens, C. 91 (1995) 285
Torres, J., Advanced copper interconnec- Witvrouw, A., see Stevens, R. 91 (1995) 208
tions for silicon CMOS technologies 91 (19951)1 2 Wolf, H., R. Streiter, S.E. Schulz and T.
Torres, J., see Mouche, M.-J. 91 (1995) 129 Gessner, Growth rate modeling for se-
Torres, J., see Bourhila, N. 91 (1995) 175 lective tungsten LPCVD 91 (1995) 332
Torres, J., see Braud, F. 91 (19952)5 1 Wolters, R.A.M., see Kordic, S. 91 (1995) 197
Toyoda, Y., see Fukada, T. 91 (1995) 227
Tremblay, G., see Mamor, M. 91 (19953)4 2
Ullmann, J., see Weide, K. 91 (1995) 234 Zaborowski, M., A. Barcz, G. Gawlik and
Utsunomiya, I., see Shingubara, S. 91 (1995) 220 I.W. Rangelow, The effect of ion im-
plantation on the properties of Al films 91 (1995) 239
Van den Homberg, M.J.C., see Leusink, Zaborowski, M., M. Adamiec and A. Barcz,
G.J. 91 (1995) 215 Hillock recognition by digital image
Van der Jeugd, C.A., see Jongste, J.F. 91 (1995) 162 processing 91 (19952)4 6
Vantomme, A., S. Degroote, J. Dekoster Zaccherini, C., see Bacchetta, M. 91 (19953)6 7
and G. Langouche, Epitaxy of CoSi,/ Zanotti, L., see Bacchetta, M. 91 (19953)6 7
Si(100): from Co/Ti/Si(100) to reac- Zavaliche, F., see Manaila, R. 91 (19952)9 5
tive deposition epitaxy 91 (1995) 24 Zeidler, D., see Stavreva, Z. 91 (19951)9 2
Vantomme, A., see Degroote, S. 91 (1995) 72 Zichner, N., see Teichert, J. 91 (1995) 44
Verbeeck, R., see Jonckx, F. 91 (1995) 378 Zichner, N., see Kaufmann, C. 91 (19952)9 1
Vogt, M. and K. Drescher, Barrier be- Zimin, S.P., V.S. Kuznetsov and A.V.
haviour of plasma deposited silicon ox- Prokaznikov, Electrical characteristics of
ide and nitride against Cu diffusion 91 (1995) 303 aluminum contacts to porous silicon 91 (1995) 355
applied
surface science
ELSEVIER Applied Surface Science 91 (1995) 393-407
Subject index
Alloys Hillock recognition by digital image pro-
cessing, M. Zaborowski, M. Adamiec
and A. Barcz 91 (1995) 246
Metallurgical and electrical investigation of
Evaluation of selective tungsten plugs on
Pt;Nigs/silicon interactions, F. Corni,
TiN, W and AISi by analytical and elec-
C. Nobili, G. Ottaviani, R. Tonini, B.
trical measurements, S.E. Schulz, B.
Grignaffini Gregorio and G. Queirolo 91 (1995) 107
Hintze, W. Griinewald, O. Fiedler and
Stress voiding and electromigration phe-
T. Gessner 91 (1995) 326
nomena in aluminum alloys, S. Kordic,
Ohmic contacts to p-type 6H-silicon car-
R.A. Augur, A.G. Dirks and R.A.M.
bide, O. Nennewitz, L. Spiess and V.
Wolters 91 (1995) 197
Breternitz 91 (1995) 347
Stress in Al, AlSiCu, and AIVPd films on
Electrical characteristics of aluminum con-
oxidized Si substrates, G.J. Leusink, J.P.
tacts to porous silicon, S.P. Zimin, V.S.
Lokker, M.J.C. van den Homberg, J.F.
Kuznetsov and A.V. Prokaznikov 91 (1995) 355
Jongste, T.G.M. Oosterlaken, G.C.A.M.
Janssen and S. Radelaar 91 (1995) 215
Aluminium oxide
Aluminium Electrical and optical properties of thin B-
FeSi, films on Al,O, substrates, K.
Herz and M. Powalla 91 (1995) 87
Some particular features of the condensa-
tion process, structure and properties of
Amorphous materials
thin metal films caused by self-ion bom-
bardment, I.V. Gusev, A.A. Mohnjuk,
V.I. Chapljuk and V.P. Belevsky 91 (1995) 182 Ternary amorphous metallic thin films as
Precursor development for the chemical va- diffusion barriers for Cu metallization,
por deposition of aluminium, copper and M.-A. Nicolet 91 (1995) 269
palladium, A. Grafe, R. Heinen, F.
Klein, Th. Kruck, M. Scherer and M. Annealing
Schober 91 (1995) 187
Stress voiding and electromigration phe- Metallurgical and electrical investigation of
nomena in aluminum alloys, S. Kordic, Pt;Nig;/silicon interactions, F. Corni,
R.A. Augur, A.G. Dirks and R.A.M. C. Nobili, G. Ottaviani, R. Tonini, B.
Wolters 91 (1995) 197 Grignaffini Gregorio and G. Queirolo 91 (1995) 107
Stress in Al, AlSiCu, and AIVPd films on Integration of a TiN barrier layer formed by
oxidized Si substrates, G.J. Leusink, J.P. rapid thermal annealing in a 1 yum
Lokker, M.J.C. van den Homberg, J.F. CMOS process, K.-H. Stegemann, V.
Jongste, T.G.M. Oosterlaken, G.C.A.M. Heinig, G. Fontaine, J. Palorec and C.
Janssen and S. Radelaar 91 (1995) 215 Beyer 91 (1995) 308
Electromigration resistance of TiWN/Cu/
TiWN interconnections, T. Fukada, T. Atomic force microscopy
Mori, Y. Toyoda, M. Hasegawa, K.
Namba and K. Ogata 91 (1995) 227 Improved thermal stability of cobalt silicide
The effect of ion implantation on the prop- formed by ion beam assisted deposition
erties of Al films, M. Zaborowski, A. on polysilicon, S. Ravesi, F. La Via, V.
Barcz, G. Gawlik and I.W. Rangelow 91 (1995) 239 Raineri and C. Spinella 91 (1995) 19
394 Subject index
Electroless copper metallisation of titanium Chemical vapour deposition
nitride, J.C. Patterson, C. Ni Dheasuna,
J. Barrett, T.R. Spalding, M. O'Reilly, Advanced multilevel metallization technol-
X. Jiang and G.M. Crean 91 (1995) 124 ogy, T. Ohba 91 (1995)
Sputtering of tantalum-based diffusion bar- The modelling routes for the chemical
riers in Si/Cu metallization: effects of vapour deposition process: application
gas pressure and composition, M. to Si,_ ,Ge, deposition, M. Pons, C.
Stavrev, C. Wenzel, A. Moller and K. Bernard, H. Rouch and R. Madar 91 (1995) 34
Drescher 91 (1995) 257 Formation of CoSi, on strained Sip gGey »
using a sacrificial Si layer, R.A. Dona-
ton, S. Kolodinski, M. Caymax, P.
Auger electron spectroscopy
Roussel, H. Bender, B. Brijs and K.
Maex 91 (1995) 77
Process optimization of copper MOCVD
Metallurgical and electrical investigation of
using modeling experimental design,
Pt;Nig,;/silicon interactions, F. Corni,
M.-J. Mouche, J.-L. Mermet, F. Pires,
C. Nobili, G. Ottaviani, R. Tonini, B.
E. Richard, J. Torres, J. Palleau and F.
Grignaffini Gregorio and G. Queirolo 91 (1995) 107
Braud 91 (1995) 129
Structure and electrical properties of thin
Structure and electrical properties of thin
copper films deposited by MOCVD, J.
copper films deposited by MOCVD, J.
Rober, C. Kaufmann and T. Gessner 91 (1995) 134
Rober, C. Kaufmann and T. Gessner 91 (1995) 134
Stress voiding and electromigration phe-
Nucleation and growth of CVD-W on TiN
nomena in aluminum alloys, S. Kordic,
studied by X-ray fluorescence spectrom-
R.A. Augur, A.G. Dirks and R.A.M.
etry, M.S. Marangon, G. Queirolo and
Wolters 91 (1995) 197
C. Savoia 91 (1995) 157
Influence of the anti reflective coating on
Influence of mixed reductants on the growth
the electromigration resistance of 0.5
rate of WF,-based W-CVD, J.F. Jongste,
em technology metal-2 line structures,
T.G.M. Oosterlaken, G.J. Leusink, C.A.
R. Stevens, A. Witvrouw, Ph.J. Roussel,
van der Jeugd, G.C.A.M. Janssen and S.
K. Maex, H. Meynen and A. Cuthbert-
Radelaar 91 (1995) 162
son 91 (1995) 208
Thermodynamic and experimental study of
Sputtering of tantalum-based diffusion bar-
Cu-LPCVD by reduction of copper
riers in Si/Cu metallization: effects of
chloride, N. Bourhila, N. Thomas, J.
gas pressure and composition, M.
Palleau, J. Torres, C. Bernard and R.
Stavrev, C. Wenzel, A. Moller and K.
Madar 91 (1995) 175
Drescher 91 (1995) 257
Precursor development for the chemical va-
Co-sputtered TiB, as a diffusion barrier for
por deposition of aluminium, copper and
advanced microelectronics with Cu met-
palladium, A. Grafe, R. Heinen, F.
allization, G. Sade and J. Pelleg 91 (1995) 263
Klein, Th. Kruck, M. Scherer and M.
LPCVD Re,Si,N, diffusion barriers in
Schober 91 (1995) 187
Si/SiO,/Cu metallizations, A.-M.
LPCVD Re,Si,N. diffusion barriers in
Dutron, E. Blanquet, C. Bernard, A. Si/SiO,/Cu metallizations, A.-M.
Bachli and R. Madar 91 (1995) 277
Dutron, E. Blanquet, C. Bernard, A.
Electrical characterization of reactively
Bachli and R. Madar 91 (1995) 277
sputtered TiN diffusion barrier layers
Aspects of TiN and Ti deposition in an
for copper metallization, C. Kaufmann,
ECR plasma enhanced CVD process, A.
J. Baumann, T. Gessner, T. Raschke, M.
Weber, R. Nikulski, C.-P. Klages, M.E.
Rennau and N. Zichner 91 (1995) 291
Gross, R.M. Charatan, R.L. Opilan and
Barrier behaviour of plasma deposited sili-
W.L. Brown 91 (1995) 314
con oxide and nitride against Cu diffu-
3D simulation of tungsten low-pressure
sion, M. Vogt and K. Drescher 91 (1995) 303
chemical vapor deposition in contact
holes, E. Bar and J. Lorenz 91 (1995) 321
Growth rate modeling for selective tungsten
Borides
LPCVD, H. Wolf, R. Streiter, S.E.
Schulz and T. Gessner 91 (1995) 332
Co-sputtered TiB, as a diffusion barrier for Selective deposition of tungsten on ITM-
advanced microelectronics with Cu met- CoSi,, J.D. Kahler, D. Depta and R.
allization, G. Sade and J. Pelleg 91 (1995) 263 Ferretti 91 (1995) 339
Subject index
A highly reliable, low cost 0.5 ym three Computer simulations
level tungsten metallization, M. Hain,
H. Korner, B. Neureither and S. RGhl 91 (1995) 374
3D simulation of tungsten low-pressure
Deposition of titanium nitride /tungsten lay-
chemical vapor deposition in contact
ers for application in vertically inte-
holes, E. Bar and J. Lorenz 91 (1995) 321
grated circuits technology, G. Ruhl, B.
Froschle, P. Ramm, A. Intemann and
W. Pamler 91 (1995) 382
Copper
Clusters
Advanced copper interconnections for sili-
Cluster beams for metallization of mi- con CMOS technologies, J. Torres 91 (1995) 112
crostructured surfaces, P. Gatz and O.F. Electroless copper metallisation of titanium
Hagena 91 (1995) 169 nitride, J.C. Patterson, C. Ni Dheasuna,
J. Barrett, T.R. Spalding, M. O'Reilly,
Cobalt X. Jiang and G.M. Crean 91 (1995) 124
Process optimization of copper MOCVD
Ti/Co bilayers in salicide technology: elec- using modeling experimental design,
trical evaluation, A. Lauwers, Q.F. M.-J. Mouche, J.-L. Mermet, F. Pires,
Wang, B. Deweerdt and K. Maex 91 (1995) 12 E. Richard, J. Torres, J. Palleau and F.
Improved thermal stability of cobalt silicide Braud 91 (1995) 129
formed by ion beam assisted deposition Structure and electrical properties of thin
on polysilicon, S. Ravesi, F. La Via, V. copper films deposited by MOCVD, J.
Raineri and C. Spinella 91 (1995) 19 Rober, C. Kaufmann and T. Gessner 91 (1995) 134
Epitaxy of CoSi,/Si(100): from Co/Ti/ Patterning of copper for multilevel metal-
Si(100) to reactive deposition epitaxy, lization: reactive ion etching and chemi-
A. Vantomme, S. Degroote, J. Dekoster cal-mechanical polishing, C. Steinbrii-
and G. Langouche 91 (1995) 24 chel 91 (1995) 139
Experimental identification of the optical Effects of the biasing frequency on RIE of
phonon of CoSi, in the infrared, S. Cu in a Cl,-based discharge, A. Bertz,
Bocelli, G. Guizzetti, F. Marabelli, G. T. Werner, N. Hille and T. Gessner 91 (1995) 147
Thungstrom and C.S. Petersson 91 (1995) 30 Investigation of the oxidation behaviour of
Comparison of CoSi, interconnection lines thin film and bulk copper, M. O’Reilly,
on crystalline and noncrystalline silicon X. Jiang, J.T. Beechinor, S. Lynch, C.
fabricated by writing focused ion beam Ni Dheasuna, J.C. Patterson and G.M.
implantation, J. Teichert, L. Bischoff, E. Crean 91 (1995) 152
Hesse, P. Schneider, D. Panknin, T. Thermodynamic and experimental study of
Gessner, B. Lobner and N. Zichner 91 (1995) 44 Cu-LPCVD by reduction of copper
Electrical and optical properties of thin chloride, N. Bourhila, N. Thomas, J.
Fe,_ ,Co,Si, films, S. Teichert, R. Palleau, J. Torres, C. Bernard and R.
Kilper, T. Franke, J. Erben, P. Haussler, Madar 91 (1995) 175
W. Henrion, H. Lange and D. Panknin 91 (1995) 56 Precursor development for the chemical
Formation of CoSi, on strained Sig gGey > vapor deposition of aluminium, copper
using a sacrificial Si layer, R.A. Dona- and palladium, A. Grafe, R. Heinen, F.
ton, S. Kolodinski, M. Caymax, P. Klein, Th. Kruck, M. Scherer and M.
Roussel, H. Bender, B. Brijs and K. Schober 91 (1995) 187
Maex 91 (1995) 77 Chemical mechanical polishing of copper
Phonon dispersion relations of metallic for multilevel metallization, Z. Stavreva,
NiSi, and CoSi, by semi-empirical D. Zeidler, M. Plétner and K. Drescher 91 (1995) 192
tight-binding calculation, S. Sanguinetti, Stress in Al, AlSiCu, and AIVPd films on
C. Calegari and L. Miglio 91 (1995) 103 oxidized Si substrates, G.J. Leusink, J.P.
Selective deposition of tungsten on ITM- Lokker, M.J.C. van den Homberg, J.F.
CoSi,, J.D. Kahler, D. Depta and R. Jongste, T.G.M. Oosterlaken, G.C.A.M.
Ferretti 91 (1995) 339 Janssen and S. Radelaar 91 (1995) 215
On the formation of silicides on poly run- Electromigration resistance of TiWN/Cu/
ners with topography by a two-step sili- TiWN interconnections, T. Fukada, T.
cidation process, F. Jonckx, R. Ver- Mori, Y. Toyoda, M. Hasegawa, K.
beeck, B. Deweerdt and K. Maex 91 (1995) 378 Namba and K. Ogata 91 (1995) 227
396 Subject index
Model calculations on a bipolar transistor Ni silicides formation and properties in RF
emitter interconnection with different sputtered Nijo9_,—Si, thin films, A.
contact shapes, K. Weide, J. Ullmann Belu-Marian, M.D. Serbanescu, R.
and W. Hasse 91 (1995) 234 Manaila and A. Devenyi 91 (1995) 63
Ti-diffusion barrier in Cu-based metalliza- Formation of CoSi, on strained Sig gGey >
tion, F. Braud, J. Torres, J. Palleau, J.L. using a sacrificial Si layer, R.A. Dona-
Mermet and M.J. Mouche 91 (1995) 251 ton, S. Kolodinski, M. Caymax, P.
Sputtering of tantalum-based diffusion bar- Roussel, H. Bender, B. Brijs and K.
riers in Si/Cu metallization: effects of Maex 91 (1995) 77
gas pressure and composition, M. Some physical properties of ReSi,7 , single
Stavrev, C. Wenzel, A. Moller and K. crystals, U. Gottlieb, M. Affronte, F.
Drescher 91 (1995) 257 Nava, O. Laborde, A. Sulpice and R.
Co-sputtered TiB, as a diffusion barrier for Madar 91 (1995) 82
advanced microelectronics with Cu met- Electrical and optical properties of thin B-
allization, G. Sade and J. Pelleg 91 (1995) 263 FeSi, films on Al,O, substrates, K.
Ternary amorphous metallic thin films as Herz and M. Powalla 91 (1995) 87
diffusion barriers for Cu metallization, Metallurgical and electrical investigation of
M.-A. Nicolet 91 (1995) 269 Pt;Niy;/silicon interactions, F. Corni,
LPCVD Re,Si,N, diffusion barriers in C. Nobili, G. Ottaviani, R. Tonini, B.
Si/SiO,/Cu metallizations, A.-M. Grignaffini Gregorio and G. Queirolo 91 (1995) 107
Dutron, E. Blanquet, C. Bernard, A. Process optimization of copper MOCVD
Bachli and R. Madar 91 (1995) 277 using modeling experimental design,
Electrical characterization of conductive and M.-J. Mouche, J.-L. Mermet, F. Pires,
non-conductive barrier layers for Cu- E. Richard, J. Torres, J. Palleau and F.
metallization, C. Ahrens, D. Depta, F. Braud 91 (1995) 129
Schitthelm and S. Wilhelm 91 (1995) 285 Influence of the anti reflective coating on
Barrier behaviour of plasma deposited sili- the electromigration resistance of 0.5
con oxide and nitride against Cu diffu- um technology metal-2 line structures,
sion, M. Vogt and K. Drescher 91 (1995) 303 R. Stevens, A. Witvrouw, Ph.J. Roussel,
K. Maex, H. Meynen and A. Cuthbert-
Depth profiling son 91 (1995) 208
Electromigration resistance of TiWN/Cu/
TiWN interconnections, T. Fukada, T.
Influence of the anti reflective coating on
Mori, Y. Toyoda, M. Hasegawa, K.
the electromigration resistance of 0.5
Namba and K. Ogata 91 (1995) 227
jum technology metal-2 line structures,
Model calculations on a bipolar transistor
R. Stevens, A. Witvrouw, Ph.J. Roussel,
emitter interconnection with different
K. Maex, H. Meynen and A. Cuthbert-
contact shapes, K. Weide, J. Ullmann
son 91 (1995) 208
and W. Hasse 91 (1995) 234
Sputtering of tantalum-based diffusion bar-
Electrical properties
riers in Si/Cu metallization: effects of
gas pressure and composition, M.
Ti/Co bilayers in salicide technology: elec- Stavrev, C. Wenzel, A. Miller and K.
trical evaluation, A. Lauwers, Q.F. Drescher 91 (1995) 257
Wang, B. Deweerdt and K. Maex 91 (1995) 12 Electrical characterization of conductive and
Improved thermal stability of cobalt silicide non-conductive barrier layers for Cu-
formed by ion beam assisted deposition metallization, C. Ahrens, D. Depta, F.
on polysilicon, S. Ravesi, F. La Via, V. Schitthelm and S. Wilhelm 91 (1995) 285
Raineri and C. Spinella 91 (1995) 19 Electrical characterization of reactively
Comparison of CoSi, interconnection lines sputtered TiN diffusion barrier layers
on crystalline and noncrystalline silicon for copper metallization, C. Kaufmann,
fabricated by writing focused ion beam J. Baumann, T. Gessner, T. Raschke, M.
implantation, J. Teichert, L. Bischoff, E. Rennau and N. Zichner 91 (1995) 291
Hesse, P. Schneider, D. Panknin, T. Barrier behaviour of plasma deposited sili-
Gessner, B. Lobner and N. Zichner 91 (1995) 44 con oxide and nitride against Cu diffu-
Electrical and optical properties of thin sion, M. Vogt and K. Drescher 91 (1995) 303
Fe,_ ,Co,Si, films, S. Teichert, R. Evaluation of selective tungsten plugs on
Kilper, T. Franke, J. Erben, P. Haussler, TiN, W and AISi by analytical and elec-
W. Henrion, H. Lange and D. Panknin 91 (1995) 56 trical measurements, S.E. Schulz, B.
Subject index
Hintze, W. Griinewald, O. Fiedler and Formation of CoSi, on strained Siy ,Ge, »
T. Gessner 91 (1995) 326 using a sacrificial Si layer, R.A. Dona-
Selective deposition of tungsten on ITM- ton, S. Kolodinski, M. Caymax, P.
CoSi,, J.D. Kahler, D. Depta and R. Roussel, H. Bender, B. Brijs and K.
Ferretti 91 (1995) 339 Maex 91 (1995) 77
W /Si Schottky diodes: effect of sputtering Metallurgical and electrical investigation of
deposition conditions on the barrier Pt;Nig;/silicon interactions, F. Corni,
height, M. Mamor, E. Dufour-Gergam, C. Nobili, G. Ottaviani, R. Tonini, B.
L. Finkman, G. Tremblay, F. Meyer and Grignaffini Gregorio and G. Queirolo 91 (1995) 107
K. Bouziane 91 (1995) 342 Electroless copper metallisation of titanium
Ohmic contacts to p-type 6H-silicon car- nitride, J.C. Patterson, C. Ni Dheasuna,
bide, O. Nennewitz, L. Spiess and V. J. Barrett, T.R. Spalding, M. O'Reilly,
Breternitz 91 (1995) 347 X. Jiang and G.M. Crean 91 (1995) 124
The ohmic contact to the silicon Schottky Process optimization of copper MOCVD
barrier using vanadium silicide and gold using modeling experimental design,
or silver metallization, A.D. Remenyuk M.-J. Mouche, J.-L. Mermet, F. Pires,
and N.M. Schmidt 91 (1995) 352 E. Richard, J. Torres, J. Palleau and F.
Electrical characteristics of aluminum con- Braud 91 (1995) 129
tacts to porous silicon, S.P. Zimin, V.S. Structure and electrical properties of thin
Kuznetsov and A.V. Prokaznikov 91 (1995) 355 copper films deposited by MOCVD, J.
On the formation of silicides on poly run- Rober, C. Kaufmann and T. Gessner 91 (1995) 134
ners with topography by a two-step sili- Stress voiding and electromigration phe-
cidation process, F. Jonckx, R. Ver- nomena in aluminum alloys, S. Kordic,
beeck, B. Deweerdt and K. Maex 91 (1995) 378 R.A. Augur, A.G. Dirks and R.A.M.
Wolters 91 (1995) 197
Electron diffraction Influence of the anti reflective coating on
the electromigration resistance of 0.5
Beam induced phase transformations and um technology metal-2 line structures,
self annealing in as-implanted iron sili- R. Stevens, A. Witvrouw, Ph.J. Roussel,
cides, G. Crecelius, K. Radermacher, K. Maex, H. Meynen and A. Cuthbert-
Ch. Dieker and S. Mesters 91 (1995) 50 son 91 (1995) 208
Electromigration resistance of TiWN/Cu/
Electron energy loss spectroscopy TiWN interconnections, T. Fukada, T.
Mori, Y. Toyoda, M. Hasegawa, K.
Beam induced phase transformations and Namba and K. Ogata 91 (1995) 227
self annealing in as-implanted iron sili- The effect of ion implantation on the prop-
cides, G. Crecelius, K. Radermacher, erties of Al films, M. Zaborowski, A.
Ch. Dieker and S. Mesters 91 (1995) 50 Barcz, G. Gawlik and I.W. Rangelow 91 (1995) 239
Hillock recognition by digital image pro-
Electron microscopy cessing, M. Zaborowski, M. Adamiec
and A. Barcz 91 (1995) 246
Ti/Co bilayers in salicide technology: elec- Sputtering of tantalum-based diffusion bar-
trical evaluation, A. Lauwers, Q.F. riers in Si/Cu metallization: effects of
Wang, B. Deweerdt and K. Maex 91 (1995) 12 gas pressure and composition, M.
Improved thermal stability of cobalt silicide Stavrev, C. Wenzel, A. Moller and K.
formed by ion beam assisted deposition Drescher 91 (1995) 257
on polysilicon, S. Ravesi, F. La Via, V. Co-sputtered TiB, as a diffusion barrier for
Raineri and C. Spinella 91 (1995) 19 advanced microelectronics with Cu met-
Comparison of CoSi, interconnection lines allization, G. Sade and J. Pelleg 91 (1995) 263
on crystalline and noncrystalline silicon LPCVD Re,Si,N, diffusion barriers in
fabricated by writing focused ion beam Si/SiO,/Cu metallizations, A.-M.
implantation, J. Teichert, L. Bischoff, E. Dutron, E. Blanquet, C. Bernard, A.
Hesse, P. Schneider, D. Panknin, T. Bachli and R. Madar 91 (1995) 277
Gessner, B. Loébner and N. Zichner 91 (1995) 44 Electrical characterization of reactively
Beam induced phase transformations and sputtered TiN diffusion barrier layers
self annealing in as-implanted iron sili- for copper metallization, C. Kaufmann,
cides, G. Crecelius, K. Radermacher, J. Baumann, T. Gessner, T. Raschke, M.
Ch. Dieker and S. Mesters 91 (1995) 50 Rennau and N. Zichner 91 (1995) 291