Applied Surface Science 1991: Vol 53 Index

21 Pages·1991·4 MB·English

Applied Surface Science 53 (1991) 396-399
North-Holland
Author index
Aboelfotoh, M.O., see d’Heurle, F.M. 53 (1991) 237 Bruynseraede, Y., see Vantomme, A. 53 (19912)7 8
Amiotti, M., A. Borghesi, F. Marabelli, Budinavicius, J., see Tamulevicius, S. 53 (1991) 159
A. Piaggi, G. Guizzetti and F. Nava, Burte, E.P. and G. Neuner, Formation of
Optical and electronic properties of rhodium silicide by rapid thermal an-
Sth-column transition metal disili- nealing and by ion beam mixing 53 (19912)8 3
cides 53 (1991) 230
Ammerlaan, J.A.M., D.R.M. Boogaard, Caffin, D., see Nygren, S. 53 (1991) 87
P.J. van der Put and J. Schoonman, Canovai, C., see Osburn, C.M. 53 (19912)9 1
Chemical vapour deposition of tung- Canteri, R., see Solmi, S. 53 (19911)8 6
sten by H, reduction of WCl, 53 (1991) 24 Caranhac, S., see Bakli, M. 53 (19913)9 1
Angelucci, R., see Solmi, S. 53 (1991) 186 Carlsson, J.-O., see Eriksson, Th. 53 (1991) 35
Attuyt, C., see Bouteville, A. 53 (1991) 11 Charai, A., see Knauth, P. 53 (19911)2 0
Chen, J.S., see Kolawa, E. 53 (19913)7 3
Bacci, L., see Nobili, C. 53 (19912)1 9 Cicognani, G., see Solmi, S. 53 (19911)8 6
Bakli, M., see Thomas, O. 53 (1991) 165 Climent-Font, A., J. Perriére, R. Pérez-
Bakli, M., G. Goltz, S. Caranhac and G. Casero, J.P. Enard and B. Lavernhe,
Bomchil, Study of the diffusion path Jon beam characterization of plasma
53 (19912)4 3
during the lateral growth in the Sali- oxide grown on TiSi, (x > 2)
53 (1991) 165
cide process 53 (1991) 391 Cotte, J., see Thomas, O.
53 (1991) 92
Barge, T., S. Poize, J. Bernardini and P. Crombeen, J.E., see Reader, A.H.
53 (1991) 115
Gas, Cobalt lattice diffusion in bulk Cuomo, J.J., see Guarnieri, C.R.
cobalt disilicide 53 (1991) 180
Benhocine, A., see Meyer, F. 53 (1991) 82 Dehm, C., J. Gyulai and H. Ryssel, For-
Benhocine, A., see Bosseboeuf, A. 53 (1991) 353 mation and contact properties of tita-
Bensahel, D., see Regolini, J.L. 53 (1991) 18 nium-silicided shallow junctions 53 (19913)1 3
Bergman, C., see Knauth, P. 53 (19911)2 0 Delfino, M., see Fair, J.A. 53 (19912)0 6
Bernard, C., see Madar, R. 53 (1991) 1 D’Heurle, ., see Nygren, S. 53 (1991) 87
Bernard, C., see Regolini, J.L. 53 (1991) 18 D’Heurle, ., see Zhang, S.-L. 53 (1991) 103
Bernardini, J., see Barge, T. 53 (19911)8 0 D’Heurle, ., see Guarnieri, C.R. 53 (1991) 115
Bodén, K., see Erlesand, U. 53 (19911)5 3 D’Heurle, ., see Lundberg, N. 53 (1991) 126
Bomchil, G., see Regolini, J.L. 53 (1991) 18 D’Heurle, .. see Thomas, O. 53 (1991) 138
Bomchil, G., see Bakli, M. 53 (19913)9 1 D’Heurle, ., see Thomas, O. 53 (1991) 165
Boogaard, D.R.M., see Ammerlaan, D’Heurle, ., M.O. Aboelfotoh, F. Pe-
J.A.M. 53 (1991) 24 savento and C.S. Petersson, Schottky
Borghesi, A., see Amiotti, M. 53 (1991) 230 barriers of scandium and scandium
Bosi, M., see Nobili, C. 53 (1991) 219 monosilicide on silicon 53 (19912)3 7
Bosseboeuf, A., A. Fourrier, F. Meyer, Dieker, Ch., see Jebasinski, R. 53 (19912)6 4
A. Benhocine and G. Gautherin, WN, Drozdy, G., see Molarius, J.M. 53 (1991) 383
films prepared by reactive ion-beam Duchateau, J.P.W.B., see Reader, A.H. 53 (1991) 92
sputter deposition 53 (1991) 353 Dutartre, D., see Regolini, J.L. 53 (1991) 18
Bouchier, D., see Meyer, F. 53 (1991) 82
Bouteville, A., C. Attuyt and J.C. Remy, Eichhammer, W., K. Maex, K. Elst and
Selective RTLPCVD of TiSi, without W. Vandervorst, Boron outdiffusion
substrate consumption 53 (1991) 11 from poly- and monocrystalline CoSi, 53 (19911)7 1
Briggs, A., O. Thomas, R. Madar and Elliman, R.G., see Ridgway, M.C. 53 (19912)6 0
J.P. Senateur, Low temperature spe- Elst, K., see Eichhammer, W. 53 (1991) 171
cific heat of CoSi, 53 (19912)4 0 Enard, J.P., see Climent-Font, A. 53 (19912)4 3
Brongersma, H.H., see Groenen, P.A.C. 53 (1991) 30 Enard, J.P., see Gdmez-San Roman, R. 53 (19912)5 4
Applied Surface Science 53 (1991) 396-399
North-Holland
Author index
Aboelfotoh, M.O., see d’Heurle, F.M. 53 (1991) 237 Bruynseraede, Y., see Vantomme, A. 53 (19912)7 8
Amiotti, M., A. Borghesi, F. Marabelli, Budinavicius, J., see Tamulevicius, S. 53 (1991) 159
A. Piaggi, G. Guizzetti and F. Nava, Burte, E.P. and G. Neuner, Formation of
Optical and electronic properties of rhodium silicide by rapid thermal an-
Sth-column transition metal disili- nealing and by ion beam mixing 53 (19912)8 3
cides 53 (1991) 230
Ammerlaan, J.A.M., D.R.M. Boogaard, Caffin, D., see Nygren, S. 53 (1991) 87
P.J. van der Put and J. Schoonman, Canovai, C., see Osburn, C.M. 53 (19912)9 1
Chemical vapour deposition of tung- Canteri, R., see Solmi, S. 53 (19911)8 6
sten by H, reduction of WCl, 53 (1991) 24 Caranhac, S., see Bakli, M. 53 (19913)9 1
Angelucci, R., see Solmi, S. 53 (1991) 186 Carlsson, J.-O., see Eriksson, Th. 53 (1991) 35
Attuyt, C., see Bouteville, A. 53 (1991) 11 Charai, A., see Knauth, P. 53 (19911)2 0
Chen, J.S., see Kolawa, E. 53 (19913)7 3
Bacci, L., see Nobili, C. 53 (19912)1 9 Cicognani, G., see Solmi, S. 53 (19911)8 6
Bakli, M., see Thomas, O. 53 (1991) 165 Climent-Font, A., J. Perriére, R. Pérez-
Bakli, M., G. Goltz, S. Caranhac and G. Casero, J.P. Enard and B. Lavernhe,
Bomchil, Study of the diffusion path Jon beam characterization of plasma
53 (19912)4 3
during the lateral growth in the Sali- oxide grown on TiSi, (x > 2)
53 (1991) 165
cide process 53 (1991) 391 Cotte, J., see Thomas, O.
53 (1991) 92
Barge, T., S. Poize, J. Bernardini and P. Crombeen, J.E., see Reader, A.H.
53 (1991) 115
Gas, Cobalt lattice diffusion in bulk Cuomo, J.J., see Guarnieri, C.R.
cobalt disilicide 53 (1991) 180
Benhocine, A., see Meyer, F. 53 (1991) 82 Dehm, C., J. Gyulai and H. Ryssel, For-
Benhocine, A., see Bosseboeuf, A. 53 (1991) 353 mation and contact properties of tita-
Bensahel, D., see Regolini, J.L. 53 (1991) 18 nium-silicided shallow junctions 53 (19913)1 3
Bergman, C., see Knauth, P. 53 (19911)2 0 Delfino, M., see Fair, J.A. 53 (19912)0 6
Bernard, C., see Madar, R. 53 (1991) 1 D’Heurle, ., see Nygren, S. 53 (1991) 87
Bernard, C., see Regolini, J.L. 53 (1991) 18 D’Heurle, ., see Zhang, S.-L. 53 (1991) 103
Bernardini, J., see Barge, T. 53 (19911)8 0 D’Heurle, ., see Guarnieri, C.R. 53 (1991) 115
Bodén, K., see Erlesand, U. 53 (19911)5 3 D’Heurle, ., see Lundberg, N. 53 (1991) 126
Bomchil, G., see Regolini, J.L. 53 (1991) 18 D’Heurle, .. see Thomas, O. 53 (1991) 138
Bomchil, G., see Bakli, M. 53 (19913)9 1 D’Heurle, ., see Thomas, O. 53 (1991) 165
Boogaard, D.R.M., see Ammerlaan, D’Heurle, ., M.O. Aboelfotoh, F. Pe-
J.A.M. 53 (1991) 24 savento and C.S. Petersson, Schottky
Borghesi, A., see Amiotti, M. 53 (1991) 230 barriers of scandium and scandium
Bosi, M., see Nobili, C. 53 (1991) 219 monosilicide on silicon 53 (19912)3 7
Bosseboeuf, A., A. Fourrier, F. Meyer, Dieker, Ch., see Jebasinski, R. 53 (19912)6 4
A. Benhocine and G. Gautherin, WN, Drozdy, G., see Molarius, J.M. 53 (1991) 383
films prepared by reactive ion-beam Duchateau, J.P.W.B., see Reader, A.H. 53 (1991) 92
sputter deposition 53 (1991) 353 Dutartre, D., see Regolini, J.L. 53 (1991) 18
Bouchier, D., see Meyer, F. 53 (1991) 82
Bouteville, A., C. Attuyt and J.C. Remy, Eichhammer, W., K. Maex, K. Elst and
Selective RTLPCVD of TiSi, without W. Vandervorst, Boron outdiffusion
substrate consumption 53 (1991) 11 from poly- and monocrystalline CoSi, 53 (19911)7 1
Briggs, A., O. Thomas, R. Madar and Elliman, R.G., see Ridgway, M.C. 53 (19912)6 0
J.P. Senateur, Low temperature spe- Elst, K., see Eichhammer, W. 53 (1991) 171
cific heat of CoSi, 53 (19912)4 0 Enard, J.P., see Climent-Font, A. 53 (19912)4 3
Brongersma, H.H., see Groenen, P.A.C. 53 (1991) 30 Enard, J.P., see Gdmez-San Roman, R. 53 (19912)5 4
Author index 397
Erb, H.P., see Koller, K. 53 (1991) 54 Hintze, B., see Gessner, T. 53 (1991) 41
Eriksson, Th., J.-T. Wang, J.-O. Carlsson, Hobbs, L.P. and K. Maex, Control of
J. Keinonen, M. Ostling and C.S. Pe- lateral overgrowth of TiSi, and CoSi,
tersson, Influence of standard proc- films in VLSI circuits 53 (19913)2 1
essing on area-selective chemical Holscher, J.G.A., see Groenen, P.A.C. 53 (1991) 30
vapour deposition of tungsten on tan- Huber, V., see Mitwalsky, A. 53 (1991) 62
talum disilicide 53 (1991) 35
Erlesand, U., M. Ostling and K. Bodén, Janssen, G.C.A.M., see Leusink, G.J. 53 (1991) 47
Formation of iron disilicide on amor- Janssen, G.C.A.M., see Jongste, J.F. 53 (1991) 212
phous silicon 53 (1991) 153 Jebasinski, R., S. Mantl, L. Vescan and
Erlesand, U., M. Ostling, B.G. Svensson Ch. Dieker, Formation of buried
and P. Gas, Point defect generation CoSi, layers with ion beam synthesis
during silicide formation 53 (19912)2 4 at low implantation energies 53 (1991) 264
Jiang, H., see Zaring, C. 53 (1991) 147
Fair, J.A. and M. Delfino, A comparison Jongste, J.F., G.C.A.M. Janssen and S.
of Ti films sputtered in an N,/Ar Radelaar, Formation of titanium di-
plasma at 25 and 500°C 53 (19912)0 6 silicide during rapid thermal anneal-
Fourrier, A., see Bosseboeuf, A. 53 (1991) 353 ing, observed by in-situ stress meas-
Franssila, S., Tungsten: sputter deposi- urements 53 (19912)1 2
tion and plasma etching 53 (19913)5 8 Joshi, R.V., see Thomas, O. 53 (1991) 165
Franssila, S., see Molarius, J.M. 53 (19913)8 3
Kaplan, W., S.-L. Zhang, H. Norstrém,
M. Ostling and A. Lindberg, Charac-
Gas, P., see Zhang, S.-L. 53 (1991) 103
terization of a self-aligned RTP tita-
Gas, P., see Knauth, P. 53 (1991) 120
nium disilicide MOS process: tita-
Gas, P., see Malchére, A. 53 (1991) 132 nium-silicon dioxide interaction 53 (1991) 338
Gas, P., see Thomas, O. 53 (1991) 165 Keinonen, J., see Eriksson, Th. 53 (1991) 35
Gas, P., see Barge, T. 53 (1991) 180 Kellam, M., see Osburn, C.M. 53 (19912)9 1
Gas, P., see Erlesand, U. 53 (19912)2 4 Knauth, P., A. Charai, D. Roux, P. Gas
Gauneau, M., see Regolini, J.L. 53 (1991) 18 and C. Bergman, Calorimetric and
Gautherin, G., see Meyer, F. 53 (1991) 82 microstructural study of nickel-sili-
Gautherin, G., see Bosseboeuf, A. 53 (19913)5 3 con thin-film reactions 53 (1991) 120
Gessner, T., B. Hintze, T. Raschke and Kolawa, E., see Pokela, P.J. 53 (1991) 364
S.E. Schulz, Investigation of tungsten
Kolawa, E., P.J. Pokela, J.S. Reid, J.S.
CVD on Mo and TiN 53 (1991) 41
Chen and M.-A. Nicolet, Amorphous
Goltz, G., see Thomas, O. 53 (19911)6 5 Ta-Si-N diffusion barriers in Si/Al
Goltz, G., see Bakli, M. 53 (19913)9 1 and Si/Cu metallizations 53 (1991) 373
Gémez-San Roman, R., R. Pérez-Casero, Koller, K., H.P. Erb and H. Ko6rner,
J.P. Enard, J. Perriére and J.M. Tungsten plug formation by an opti-
Martinez-Duart, Plasma oxidation of mized tungsten etch back process in
TaSi, thin films 53 (19912)5 4 non-fully planarized topology 53 (1991) 54
Gottlieb, U., O. Laborde, O. Thomas, A. Korner, H., see Koller, K. 53 (1991) 54
Rouault, J.P. Senateur and R. Madar, Korner, H., see Mitwalsky, A. 53 (1991) 62
Some transport properties of single Kwok, C.-K., see Pokela, P.J. 53 (1991) 364
crystals of Group Va transition metal
disilicides 53 (19912)4 7 Laborde, O., see Gottlieb, U. 53 (1991) 247
Groenen, P.A.C., J.G.A. Holscher and Lami, Ph., Ph. Normandon and J.C.
H.H. Brongersma, The WF,-Si reac- Oberlin, Adhesion of LPCVD WSi,/
tion studied in situ by time-resolved W bilayers on oxide films 53 (1991) 69
mass spectrometry 53 (1991) 30 Langouche, G., see Vantomme, A. 53 (1991) 278
Guarnieri, C.R., F.M. d’Heurle, J.J. Larere, A., see Malchére, A. 53 (1991) 132
Cuomo and S.J. Whitehair, Reaction Lauwers, A., see Maex, K. 53 (1991) 273
of niobium with diamond films 53 (1991) 115 Lavernhe, B., see Climent-Font, A. 53 (1991) 243
Guizzetti, G., see Amiotti, M. 53 (19912)3 0 La Via, F., see Privitera, V. 53 (19911)9 0
Gyulai, J., see Dehm, C. 53 (1991) 313 La Via, F., V. Privitera and E. Rimini,
Rapid thermal processing reliability
Haut, C., see Malchére, A. 53 (1991) 132 of titanium silicide implanted with ar-
Henz, J., see von Kanel, H. 53 (1991) 196 senic, boron and phosphorus 53 (19913)7 7
398 Author index
Leusink, G.J., T.G.M. Oosterlaken, C.A. Normandon, Ph., see Lami, Ph. 53 (1991) 69
van der Jeugd, G.C.A.M. Janssen and Norstrém, H., see Kaplan, W. 53 (19913)3 8
S. Radelaar, The growth of ultra-thin Nygren, S., D. Caffin, M. Ostling and
amorphous WGe, films on Si by the F.M. d’Heurle, Morphological insta-
GeH, reduction of WF, 53 (1991) 47 bilities of nickel and cobalt silicides
Lindberg, A., see Kaplan, W. 53 (19913)3 8 on silicon 53 (1991) 87
Lundberg, N., M. Ostling and F.M.
d’Heurle, Chromium germanides: for- Oberlin, J.C., see Lami, Ph. 53 (1991) 69
mation, structure and properties 53 (1991) 126 Onda, N., see von Kanel, H. 53 (19911)9 6
Oosterlaken, T.G.M., see Leusink, G.J. 53 (1991) 47
Madar, R. and C. Bernard, Chemical Osburn, C.M., Q.F. Wang, M. Kellam, C.
vapour deposition of metal silicides in Canovai, P.L. Smith, G.E. McGuire,
silicon microelectronics 53(1991) 1 Z.G. Xiao and G.A. Rozgonyi, Incor-
Madar, R., see Regolini, J.L. 53 (1991) 18 poration of metal silicides and refrac-
Madar, R., see Briggs, A. 53 (19912)4 0 tory metals in VLSI technology 53 (19912)9 1
Madar, R., see Gottlieb, U. 53 (19912)4 7 Ostling, M., see Eriksson, Th. 53 (1991) 35
Maex, K., see Eichhammer, W. 53 (19911)7 1 Ostling, M., see Nygren, S. 53 (1991) 87
Maex, K., J. Vanhellemont, S. Petersson Ostling, M., see Lundberg, N. 53 (19911)2 6
and A. Lauwers, Formation of ultra- Ostling, M., see Zaring, C. 53 (19911)4 7
thin buried CoSi, layers by ion im- Ostling, M., see Erlesand, U. 53 (19911)5 3
plantation in (100) Si 53 (1991) 273 Ostling, M., see Erlesand, U. 53 (19912)2 4
Maex, K., see Hobbs, L.P. 53 (1991) 321 Ostling, M., see Kaplan, W. 53 (19913)3 8
Maex, K., Materials aspects of silicides Ottaviani, G., see Nobili, C. 53 (19912)1 9
for advanced technologies 53 (1991) 328
Maex, K., see Palmans, R. 53 (1991) 345
Palmans, R. and K. Maex, Feasibility
Malchére, A., P. Gas, C. Haut, A. Larere,
study of electroless copper deposition
T.T. Nguyen and S. Poize, Grain
for VLSI 53 (1991) 345
boundary composition of pure and
Pérez-Casero, R., see Climent-Font, A. 53 (19912)4 3
boron-doped cobalt disilicide 53 (1991) 132
Pérez-Casero, R., see Gdmez-San Ro-
Mantl, S., see Jebasinski, R. 53 (1991) 264
man, R. 53 (19912)5 4
Marabelli, F., see Amiotti, M. 53 (1991) 230
Perriére, J., see Climent-Font, A. 53 (19912)4 3
Martinez-Duart, J.M., see Gd6mez-
Perriére, J., see G6mez-San Roman, R. 53 (19912)5 4
San Roman, R. 53 (1991) 254
Pesavento, F., see d’Heurle, F.M. 53 (19912)3 7
Mastromatteo, E., see Regolini, J.L. 53 (1991) 18
Petersson, C.S., see Eriksson, Th. 53 (1991) 35
McGuire, G.E., see Osburn, C.M. 53 (1991) 291
Petersson, C.S., see Thomas, O. 53 (19911)3 8
Mercier, J., see Regolini, J.L. 53 (1991) 18
Petersson, C.S., see d’Heurle, F.M. 53 (19912)3 7
Meyer, F., D. Bouchier, A. Benhocine
Petersson, S., see Maex, K. 53 (19912)7 3
and G. Gautherin, Effects of impuri-
Philibert, J., Reactive diffusion in thin
ties on the interface of ion beam
films 53 (1991) 74
sputtered tungsten with silicon 53 (1991) 82
Piaggi, A., see Amiotti, M. 53 (1991) 230
Meyer, F., see Bosseboeuf, A. 53 (1991) 353
Poize, S., see Malchére, A. 53 (1991) 132
Mitwalsky, A., H. Korner and V. Huber,
Poize, S., see Barge, T. 53 (1991) 180
Metallurgy of a two-step approach for
Pokela, P.J., C.-K. Kwok, E. Kolawa, S.
CVD-W contacts studied by TEM 53 (1991) 62
Raud and M.-A. Nicolet, Perfor-
Molarius, J.M., S. Franssila, G. Drozdy
mance Of Wio)_,N, diffusion barriers
and J. Saarilahti, Tungsten silicide
between (Si) and Cu 53 (19913)6 4
formation from sequentially sputtered
tungsten and silicon films 53 (1991) 383 Pokela, P.J., see Kolawa, E. 53 (1991) 373
Pranevicius, L., see Tamulevicius, S. 53 (1991) 159
Privitera, V., F. La Via, C. Spinella, V.
Naburgh, E.P., see Reader, A.H. 53 (1991) 92
Raineri and E. Rimini, Titanium sili-
Nava, F., see Amiotti, M. 53 (1991) 230
cide as a diffusion source for phos-
Neuner, G., see Burte, E.P. 53 (1991) 283
phorus: precipitation and activation 53 (1991) 190
Nguyen, T.T., see Malchére, A. 53 (1991) 132
Nicolet, M.-A., see Pokela, P.J. 53 (1991) 364 Privitera, V., see La Via, F. 53 (1991) 377
Nicolet, M.-A., see Kolawa, E. 53 (1991) 373
Nobili, C., M. Bosi, G. Ottaviani, G. Queirolo, G., see Nobili, C. 53 (1991) 219
Queirolo and L. Bacci, Rapid thermal
annealing of WSi,. In-situ resistance Radelaar, S., see Leusink, G.J. 53 (1991) 47
measurements 53 (1991) 219 Radelaar, S., see Jongste, J.F. 53 (1991) 212
Author index
Raineri, V., see Privitera, V. 53 (1991) 190 Thomas, O., C.S. Petersson and F.M.
Raschke, T., see Gessner, T. 53 (1991) 41 d’Heurle, The reaction of scandium
Raud, S., see Pokela, P.J. 53 (19913)6 4 thin films with silicon: diffusion, nu-
Reader, A.H., J.P.W.B. Duchateau, J.E. cleation, resistivities 53 (1991) 138
Crombeen, E.P. Naburgh and M.A.J. Thomas, O., G. Scilla, P. Gas, J. Cotte,
Somers, The formation of epitaxial R.V. Joshi, M. Bakli, G. Géltz and
CoSi, thin films on (001) Si from F.M. d’Heurle, Diffusion of dopants
amorphous Co-W alloys 53 (1991) 92 in tungsten disilicide: effects of diffu-
Regolini, J.L., E. Mastromatteo, M. sion paths 53 (1991) 165
Gauneau, J. Mercier, D. Dutartre, G. Thomas, O., see Briggs, A. 53 (19912)4 0
Bomchil, C. Bernard, R. Madar and Thomas, O., see Gottlieb, U. 53 (19912)4 7
D. Bensahel, Aspects of the selective
deposition of TiSi, by LRP-CVD for
use in ULSI submicron technology 53 (1991) 18 Van der Jeugd, C.A., see Leusink, G.J. 53 (1991) 47
Reid, J.S., see Kolawa, E. 53 (1991) 373 Van der Put, P.J., see Ammerlaan,
Remy, J.C., see Bouteville, A. 53 (1991) 11 J.A.M. 53 (1991) 24
Ridgway, M.C., R.G. Elliman and JS. Vanderstraeten, H., see Vantomme, A. 53 (1991) 278
Williams, Epitaxial recrystallization of Vandervorst, W., see Eichhammer, W. 53 (1991) 171
ion-implanted CoSi, 53 (19912)6 0 Vanhellemont, J., see Maex, K. 53 (1991) 273
Rimini, E., see Privitera, V. 53 (1991) 190 Vantomme, A., M.F. Wu, G. Langouche,
Rimini, E., see La Via, F. 53 (19913)7 7 H. Vanderstraeten and Y. Bruynser-
Rouault, A., see Gottlieb, U. 53 (19912)4 7 aede, Structural properties of thin
Roux, D., see Knauth, P. 53 (1991) 120 silicide layers formed by high-dose
Rozgonyi, G.A., see Osburn, C.M. 53 (19912)9 1 metal implantation 53 (19912)7 8
Ryssel, H., see Dehm, C. 53 (1991) 313 Vescan, L., see Jebasinski, R. 53 (19912)6 4
Von Kanel, H., R. Stalder, H. Sirring-
Saarilahti, J., see Molarius, J.M. 53 (1991) 383 haus, N. Onda and J. Henz, Epitaxial
Schoonman, J., see Ammerlaan, J.A.M. 53 (1991) 24 silicides with the fluorite structure 53 (1991) 196
Schulz, S.E., see Gessner, T. 53 (1991) 41
Scilla, G., see Thomas, O. 53 (1991) 165
Senateur, J.P., see Briggs, A. 53 (19912)4 0
Wang, J.-T., see Eriksson, Th. 53 (1991) 35
Senateur, J.P., see Gottlieb, U. 53 (19912)4 7
Wang, Q.F., see Osburn, C.M. 53 (19912)9 1
Sirringhaus, H., see von Kanel, H. 53 (19911)9 6
Whitehair, S.J., see Guarnieri, C.R. 53 (1991) 115
Smith, P.L., see Osburn, C.M. 53 (19912)9 1
Williams, J.S., see Ridgway, M.C. 53 (19912)6 0
Solmi, S., R. Angelucci, G. Cicognani
Wu, M.F., see Vantomme, A. 53 (19912)7 8
and R. Canteri, Diffusion of boron
and arsenic in molybdenum disilicide
films 53 (1991) 186
Somers, M.A.J., see Reader, A.H. 53 (1991) 92 Xiao, Z.G., see Osburn, C.M. 53 (19912)9 1
Spinella, C., see Privitera, V. 53 (1991) 190
Stalder, R., see von Kanel, H. 53 (1991) 196
Svensson, B.G., see Zaring, C. 53 (1991) 147 Zaring, C., H. Jiang, B.G. Svensson and
Svensson, B.G., see Erlesand, U. 53 (19912)2 4 M. Ostling, Boron redistribution dur-
ing formation of nickel silicides 53 (1991) 147
Tamulevicius, S., L. Pranevicius and J. Zhang, S.-L., F.M. d'Heurle and P. Gas,
Budinavicius, Application of dynamic Understanding solid phase interac-
ion mixing in platinum silicide forma- tions: the use of tracer isotopes 53 (1991) 103
tion 53 (1991) 159 Zhang, S.-L., see Kaplan, W. 53 (1991) 338
Applied Surface Science 53 (1991) 400-414
North-Holland
Subject index
Adhesion Aspects of the selective deposition of
TiSi, by LRP-CVD for use in ULSI
Adhesion of LPCVD WSi,/W bilayers submicron technology, JL. Regolini,
on oxide films, Ph. Lami, Ph. Nor- E. Mastromatteo, ”. Gaancau, f.
adidas ca ORY Cieaile 53(1991) 69 Mercier, D. Dutartre, G. Bomchil, C.
ii Bernard, R. Madar and D. Bensahel 53 (1991) 18
Formation of titanium disilicide during
Alloys rapid thermal annealing, observed by
in-situ. stress measurements, J.F.
Jongste, G.C.A.M. Janssen and S.
The formation of epitaxial CoSi, thin
Radelaar 53 (1991) 212
films on (001) Si from amorphous
Rapid thermal annealing of WSi,. In-situ
Co-W alloys, A.H. Reader, J.P.W.B.
resistance measurements, C. Nobili,
Duchateau, J.E. Crombeen, E.P.
M. Bosi, G. Ottaviani, G. Queirolo
Naburgh and M.A.J. Somers 53 (1991) 92
and L. Bacci 53 (1991) 219
Formation of rhodium silicide by rapid
Aluminium thermal annealing and by ion beam
mixing, E.P. Burte and G. Neuner 53 (1991) 283
Characterization of a self-aligned RTP
Metallurgy of a two-step approach for
titanium disilicide MOS process: tita-
CVD-W contacts studied by TEM, A.
nium-silicon dioxide interaction, W.
Mitwalsky, H. Korner and V. Huber 53 (1991) 62
Kaplan, S.-L. Zhang, H. Norstrom,
Amorphous Ta-Si-N diffusion barriers
M. Ostling and A. Lindberg 53 (19913)3 8
in Si/Al and Si/Cu metallizations, E.
Rapid thermal processing reliability of
Kolawa, P.J. Pokela, J.S. Reid, J.S.
53 (1991) 373 titanium silicide implanted with ar-
Chen and M.-A. Nicolet
senic, boron and phosphorus, F.
La Via, V. Privitera and E. Rimini 53 (19913)7 7
Amorphous materials Tungsten silicide formation from sequen-
tially sputtered tungsten and silicon
The formation of epitaxial CoSi, thin films, J.M. Molarius, S. Franssila, G.
films on (001) Si from amorphous Drozdy and J. Saarilahti 53 (1991) 383
Co-W alloys, A.H. Reader, J.P.W.B.
Duchateau, J.E. Crombeen, E.P. Antimony
Naburgh and M.A.J. Somers 53 (1991) 92
Formation of iron disilicide on _amor- Diffusion of dopants in tungsten disili-
phous silicon, U. Erlesand, M. Ostling cide: effects of diffusion paths, O.
and K. Boden : 53 (1991) 153 Thomas, G. Scilla, P. Gas, J. Cotte,
Amorphous Ta-—Si-N diffusion barriers RV. Joshi. M. Baki, G. Géltz and
in Si/Al and Si/Cu metallizations, E. EM. d’Heurle 53 (1991) 165
Kolawa, P.J. Pokela, J.S. Reid, J.S.
Chen and M.-A. Nicolet 53 (19913)7 3
Arsenic
Annealing Diffusion of dopants in tungsten disili-
cide: effects of diffusion paths, O.
Selective RTLPCVD of TiSi, without Thomas, G. Scilla, P. Gas, J. Cotte,
substrate consumption, A. Bouteville, R.V. Joshi, M. Bakli, G. Géltz and
C. Attuyt and J.C. Remy 53 (1991) 11 F.M. d’Heurle 53 (1991) 165
Subject index
Diffusion of boron and arsenic in molyb- Carbides
denum disilicide films, S. Solmi, R.
Angelucci, G. Cicognani and R. Can-
teri 53 (1991) 186 Reaction of niobium with diamond films,
Rapid thermal processing reliability of C.R. Guarnieri, F.M. d'Heurle, J.J.
titanium silicide implanted with ar- Cuomo and S.J. Whitehair 53 (1991) 115
senic, boron and phosphorus, F.
La Via, V. Privitera and E. Rimini 53 (1991) 377 Chemical vapour deposition
Auger electron spectroscopy
Chemical vapour deposition of metal sili-
Effects of impurities on the interface of cides in silicon microelectronics, R.
ion beam sputtered tungsten with sili- Madar and C. Bernard 53 (1991)
con, F. Meyer, D. Bouchier, A. Ben- Selective RTLPCVD of TiSi, without
hocine and G. Gautherin 53 (1991) 82 substrate consumption, A. Bouteville,
The formation of epitaxial CoSi, thin C. Attuyt and J.C. Remy 53 (1991)
films on (001) Si from amorphous Aspects of the selective deposition of
Co-W alloys, A.H. Reader, J.P.W.B. TiSi, by LRP-CVD for use in ULSI
Duchateau, J.E. Crombeen, E.P. submicron technology, J.L. Regolini,
Naburgh and M.A.J. Somers 53 (1991) 92 E. Mastromatteo, M. Gauneau, J.
Grain boundary composition of pure and Mercier, D. Dutartre, G. Bomchil, C.
boron-doped cobalt disilicide, A. Bernard, R. Madar and D. Bensahel 53 (1991)
Malchére, P. Gas, C. Haut, A. Larere, Chemical vapour deposition of tungsten
T.T. Nguyen and S. Poize 53 (1991) 132 by H, reduction of WCl,, J.A.M.
WN, films prepared by reactive ion-beam Ammerlaan, D.R.M. Boogaard, P.J.
sputter deposition, A. Bosseboeuf, A. van der Put and J. Schoonman 53 (1991)
Fourrier, F. Meyer, A. Benhocine and The WF,-Si reaction studied in situ by
G. Gautherin 53 (1991) 353 time-resolved mass spectrometry,
P.A.C. Groenen, J.G.A. Holscher and
Boron H.H. Brongersma 53:(1991) 3
Influence of standard processing on
area-selective chemical vapour depo-
Effects of impurities on the interface of
sition of tungsten on tantalum disili-
ion beam sputtered tungsten with sili-
cide, Th. Eriksson, J.-T. Wang, J.-O.
con, F. Meyer, D. Bouchier, A. Ben-
Carlsson, J. Keinonen, M. Ostling and
hocine and G. Gautherin 53 (1991) 82
C.S. Petersson 53 (1991) 35
Boron redistribution during formation of
Investigation of tungsten CVD on Mo
nickel silicides, C. Zaring, H. Jiang,
and TiN, T. Gessner, B. Hintze, T.
B.G. Svensson and M. Ostling 53 (1991) 147
Raschke and S.E. Schulz 53 (1991)
Diffusion of dopants in tungsten disili-
The growth of ultra-thin amorphous
cide: effects of diffusion paths, O.
WGe, films on Si by the GeH, re-
Thomas, G. Scilla, P. Gas, J. Cotte,
duction of WF,, G.J. Leusink, T.G.M.
R.V. Joshi, M. Bakli, G. Goltz and
Oosterlaken, C.A. van der Jeugd,
F.M. d’Heurle 53 (1991) 165
G.C.A.M. Janssen and S. Radelaar 53 (1991)
Boron outdiffusion from poly- and mono-
Metallurgy of a two-step approach for
crystalline CoSi,, W. Eichhammer, K.
CVD-W contacts studied by TEM, A.
Maex, K. Elst and W. Vandervorst 53 (1991) 171
Mitwalsky, H. Korner and V. Huber 53 (1991)
Diffusion of boron and arsenic in molyb-
Adhesion of LPCVD WSi,/W bilayers
denum disilicide films, S. Solmi, R.
on oxide films, Ph. Lami, Ph. Nor-
Angelucci, G. Cicognani and R. Can-
mandon and J.C. Oberlin 53 (1991)
teri 53 (1991) 186
Formation and contact properties of tita-
nium-silicided shallow junctions, C. Chromium
Dehm, J. Gyulai and H. Ryssel 53 (1991) 313
Rapid thermal processing reliability of
titanium silicide implanted with ar- Chromium germanides: formation, struc-
senic, boron and phosphorus, F. ture and properties, N. Lundberg, M.
La Via, V. Privitera and E. Rimini 53 (19913)7 7 Ostling and F.M. d’Heurle 53 (1991) 126
402 Subject index
Cobalt Compound formation
Reactive diffusion in thin films, J. Phili-
Morphological instabilities of nickel and bert 53 (1991) 74
cobalt silicides on silicon, S. Nygren, Morphological instabilities of nickel and
D. Caffin, M. Ostling and F.M. cobalt silicides on silicon, S. Nygren,
d’Heurle 53 (1991) 87 D. Caffin, M. Ostling and F.M.
The formation of epitaxial CoSi, thin d’Heurle 53 (1991) 87
films on (001) Si from amorphous The formation of epitaxial CoSi, thin
Co-W alloys, A.H. Reader, J.P.W.B. films on (001) Si from amorphous
Duchateau, J.E. Crombeen, E.P. Co-W alloys, A.H. Reader, J.P.W.B.
Naburgh and M.A.J. Somers 53 (1991) 92 Duchateau, J.E. Crombeen, E.P.
Grain boundary composition of pure and Naburgh and M.A.J. Somers 53 (1991) 92
boron-doped cobalt disilicide, A. Understanding solid phase interactions:
Malchére, P. Gas, C. Haut, A. Larere, the use of tracer isotopes, S.-L.
T.T. Nguyen and S. Poize 53 (19911)3 2 Zhang, F.M. d’Heurle and P. Gas 53 (1991) 103
Boron outdiffusion from poly- and mono- Reaction of niobium with diamond films,
crystalline CoSi,, W. Eichhammer, K. C.R. Guarnieri, F.M. d'Heurle, J.J.
Maex, K. Elst and W. Vandervorst 53 (1991) 171 Cuomo and S.J. Whitehair 53 (1991) 115
Cobalt lattice diffusion in bulk cobalt dis- Calorimetric and microstructural study of
ilicide, T. Barge, S. Poize, J. Bernar- nickel-—silicon thin-film reactions, P.
dini and P. Gas 53 (1991) 180 Knauth, A. Charai, D. Roux, P. Gas
Epitaxial silicides with the fluorite struc- and C. Bergman 53 (1991) 120
ture, H. von Kanel, R. Stalder, H. Chromium germanides: formation, struc-
Sirringhaus, N. Onda and J. Henz 53 (1991) 196 ture and properties, N. Lundberg, M.
Low temperature specific heat of CoSi,, Ostling and F.M. d’Heurle 53 (1991) 126
A. Briggs, O. Thomas, R. Madar and The reaction of scandium thin films with
J.P. Senateur 53 (19912)4 0 silicon: diffusion, nucleation, resistivi-
Epitaxial recrystallization of ion-implant- ties, O. Thomas, C.S. Petersson and
ed CoSi,, M.C. Ridgway, R.G. Elli- F.M. d’Heurle 53 (1991) 138
man and J.S. Williams 53 (1991) 260 Boron redistribution during formation of
Formation of buried CoSi, layers with nickel silicides, C. Zaring, H. Jiang,
ion beam synthesis at low implanta- B.G. Svensson and M. Ostling 53 (1991) 147
tion energies, R. Jebasinski, S. Mantl, Formation of iron disilicide on amor-
L. Vescan and Ch. Dieker 53 (19912)6 4 phous silicon, U. Erlesand, M. Ostling
Formation of ultra-thin buried CoSi, lay- and K. Bodén 53 (1991) 153
ers by ion implantation in (100) Si, K. Application of dynamic ion mixing in
Maex, J. Vanhellemont, S. Petersson platinum silicide formation, $. Tamu-
and A. Lauwers 53 (1991) 273 levicius, L. Pranevicius and J. Budina-
Structural properties of thin silicide lay- vicius 53 (1991) 159
ers formed by high-dose metal im- A comparison of Ti films sputtered in an
plantation, A. Vantomme, M.F. Wu, N,/Ar plasma at 25 and 500°C, J.A.
G. Langouche, H. Vanderstraeten and Fair and M. Delfino 53 (1991) 206
Y. Bruynseraede 53 (19912)7 8 Formation of titanium disilicide during
Incorporation of metal silicides and re- rapid thermal annealing, observed by
fractory metals in VLSI technology, in-situ. stress measurements, J.F.
C.M. Osburn, Q.F. Wang, M. Kellam, Jongste, G.C.A.M. Janssen and S.
C. Canovai, P.L. Smith, G.E. Radelaar 53 (19912)1 2
McGuire, Z.G. Xiao and G.A. Roz- Rapid thermal annealing of WSi,. In-situ
gonyi 53 (19912)9 1 resistance measurements, C. Nobili,
Control of lateral overgrowth of TiSi, M. Bosi, G. Ottaviani, G. Queirolo
and CoSi, films in VLSI circuits, L.P. and L. Bacci 53 (19912)1 9
Hobbs and K. Maex 53 (19913)2 1 Point defect generation during silicide
Materials aspects of silicides for ad- formation, U. Erlesand, M. Ostling,
vanced technologies, K. Maex 53 (1991) 328 B.G. Svensson and P. Gas 53 (1991) 224
Subject index
Formation of buried CoSi, layers with Understanding solid phase interactions:
ion beam synthesis at low implanta- the use of tracer isotopes, S.-L.
tion energies, R. Jebasinski, S. Mantl, Zhang, F.M. d’Heurle and P. Gas 53 (1991) 103
L. Vescan and Ch. Dieker 53 (19912)6 4 The reaction of scandium thin films with
Formation of ultra-thin buried CoSi, lay- silicon: diffusion, nucleation, resistivi-
ers by ion implantation in (100) Si, K. ties, O. Thomas, C.S. Petersson and
Maex, J. Vanhellemont, S. Petersson F.M. d’Heurle 53 (1991) 138
and A. Lauwers 53 (1991) 273 Diffusion of dopants in tungsten disili-
Structural properties of thin silicide lay- cide: effects of diffusion paths, O.
ers formed by high-dose metal im- Thomas, G. Scilla, P. Gas, J. Cotte,
plantation, A. Vantomme, M.F. Wu, R.V. Joshi, M. Bakli, G. Goéltz and
G. Langouche, H. Vanderstraeten and F.M. d’Heurle 53 (1991) 165
Y. Bruynseraede 53 (19912)7 8 Boron outdiffusion from poly- and mono-
Formation of rhodium silicide by rapid crystalline CoSi,, W. Eichhammer, K.
thermal annealing and by ion beam Maex, K. Elst and W. Vandervorst 53 (1991) 171
mixing, E.P. Burte and G. Neuner 53 (1991) 283 Cobalt lattice diffusion in bulk cobalt di-
Formation and contact properties of tita- silicide, T. Barge, S. Poize, J. Bernar-
nium-silicided shallow junctions, C. dini and P. Gas 53 (1991) 180
Dehm, J. Gyulai and H. Ryssel 53 (19913)1 3 Diffusion of boron and arsenic in molyb-
Materials aspects of silicides for ad- denum disilicide films, S. Solmi, R.
vanced technologies, K. Maex 53 (1991) 328 Angelucci, G. Cicognani and R. Can-
Characterization of a self-aligned RTP teri 53 (1991) 186
titanium disilicide MOS process: tita- Titanium silicide as a diffusion source for
nium-silicon dioxide interaction, W. phosphorus: precipitation and activa-
Kaplan, S.-L. Zhang, H. Norstrom, tion, V. Privitera, F. La Via, C.
M. Ostling and A. Lindberg 53 (19913)3 8 Spinella, V. Raineri and E. Rimini 53 (1991) 190
Tungsten silicide formation from sequen- Performance of Wyo )_,N, diffusion bar-
tially sputtered tungsten and silicon riers between (Si) and Cu, PJ.
films, J.M. Molarius, S. Franssila, G. Pokela, C.-K. Kwok, E. Kolawa, S.
Drozdy and J. Saarilahti 53 (19913)8 3 Raud and M.-A. Nicolet 53 (19913)6 4
Rapid thermal processing reliability of
titanium silicide implanted with ar-
Copper
senic, boron and phosphorus, F.
La Via, V. Privitera and E. Rimini 53 (19913)7 7
Feasibility study of electroless copper de- Study of the diffusion path during the
position for VLSI, R. Palmans and K. lateral growth in the Salicide process,
Maex 53 (1991) 345 M. Bakli, G. Gdéltz, S. Caranhac and
Performance of Wio )_,N, diffusion bar- G. Bomchil 53 (19913)9 1
riers between (Si) and Cu, PJ.
Pokela, C.-K. Kwok, E. Kolawa, S. Doping effects
Raud and M.-A. Nicolet 53 (19913)6 4
Amorphous Ta-Si-N diffusion barriers
in Si/Al and Si/Cu metallizations, E. Aspects of the selective deposition of
Kolawa, P.J. Pokela, J.S. Reid, J.S. TiSi, by LRP-CVD for use in ULSI
Chen and M.-A. Nicolet 53 (1991) 373 submicron technology, J.L. Regolini,
E. Mastromatteo, M. Gauneau, J.
Mercier, D. Dutartre, G. Bomchil, C.
Diamond Bernard, R. Madar and D. Bensahel 53 (1991) 18
Grain boundary composition of pure and
Reaction of niobium with diamond films, boron-doped cobalt disilicide, A.
C.R. Guarnieri, F.M. d’Heurle, J.J. Malchére, P. Gas, C. Haut, A. Larere,
Cuomo and S.J. Whitehair 53 (1991) 115 T.T. Nguyen and S. Poize 53 (1991) 132
Boron redistribution during formation of
nickel silicides, C. Zaring, H. Jiang,
Diffusion
B.G. Svensson and M. Ostling 53 (1991) 147
Diffusion of dopants in tungsten disili-
Reactive diffusion in thin films, J. Phili- cide: effects of diffusion paths, O.
bert 53 (1991) 74 Thomas, G. Scilla, P. Gas, J. Cotte,
404 Subject index
R.V. Joshi, M. Bakli, G. Goltz and Schottky barriers of scandium and scan-
F.M. d’Heurle 53 (1991) 165 dium monosilicide on silicon, F.M.
Boron outdiffusion from poly- and mono- d’Heurle, M.O. Aboelfotoh, F. Pe-
crystalline CoSi,, W. Eichhammer, K. savento and C.S. Petersson 53 (19912)3 7
Maex, K. Elst and W. Vandervorst 53 (19911)7 1 Some transport properties of single crys-
Diffusion of boron and arsenic in molyb- tals of Group Va transition metal di-
denum disilicide films, S. Solmi, R. silicides, U. Gottlieb, O. Laborde, O.
Angelucci, G. Cicognani and R. Can- Thomas, A. Rouault, J.P. Senateur
teri 53 (1991) 186 and R. Madar 53 (19912)4 7
Titanium silicide as a diffusion source for Formation of ultra-thin buried CoSi, lay-
phosphorus: precipitation and activa- ers by ion implantation in (100) Si, K.
tion, V. Privitera, F. La Via, C. Spi- Maex, J. Vanhellemont, S. Petersson
nella, V. Raineri and E. Rimini 53 (1991) 190 and A. Lauwers 53 (1991) 273
Rapid thermal processing reliability of Formation of rhodium silicide by rapid
titanium silicide implanted with ar- thermal annealing and by ion beam
senic, boron and phosphorus, F. mixing, E.P. Burte and G. Neuner 53 (1991) 283
La Via, V. Privitera and E. Rimini 53 (19913)7 7 Incorporation of metal silicides and re-
fractory metals in VLSI technology,
Electrical properties C.M. Osburn, Q.F. Wang, M. Kellam,
C. Canovai, P.L. Smith, G.E.
Chemical vapour deposition of tungsten McGuire, Z.G. Xiao and G.A. Roz-
by H, reduction of WCI,, J.A.M. gonyi 53 (1991) 291
Ammerlaan, D.R.M. Boogaard, P.J. Formation and contact properties of tita-
van der Put and J. Schoonman 53 (1991) 24 nium-silicided shallow junctions, C.
Investigation of tungsten CVD on Mo Dehm, J. Gyulai and H. Ryssel 53 (19913)1 3
and TiN, T. Gessner, B. Hintze, T. Control of lateral overgrowth of TiSi,
Raschke and S.E. Schulz 53 (1991) 41 and CoSi, films in VLSI circuits, L.P.
The growth of ultra-thin amorphous Hobbs and K. Maex 53 (19913)2 1
WGe, films on Si by the GeH, re- Materials aspects of silicides for ad-
duction of WF,, G.J. Leusink, T.G.M. vanced technologies, K. Maex 53 (19913)2 8
Oosterlaken, C.A. van der Jeugd, Characterization of a self-aligned RTP
G.C.A.M. Janssen and S. Radelaar 53 (1991) 47 titanium disilicide MOS process: tita-
Chromium germanides: formation, struc- nium-silicon dioxide interaction, W.
ture and properties, N. Lundberg, M. Kaplan, S.-L. Zhang, H. Norstrom,
Ostling and F.M. d’Heurle 53 (1991) 126 M. Ostling and A. Lindberg 53 (1991) 338
The reaction of scandium thin films with WN, films prepared by reactive ion-beam
silicon: diffusion, nucleation, resistivi- sputter deposition, A. Bosseboeuf, A.
ties, O. Thomas, C.S. Petersson and Fourrier, F. Meyer, A. Benhocine and
F.M. d’Heurle 53 (1991) 138 G. Gautherin 53 (1991) 353
Application of dynamic ion mixing in Tungsten: sputter deposition and plasma
platinum silicide formation, S. etching, S. Franssila 53 (1991) 358
Tamulevicius, L. Pranevicius and J. Performance of Wio9_,N, diffusion bar-
BudinaviCcius 53 (1991) 159 riers between (Si) and Cu, PJ.
Titanium silicide as a diffusion source for Pokela, C.-K. Kwok, E. Kolawa, S.
phosphorus: precipitation and activa- Raud and M.-A. Nicolet 53 (1991) 364
tion, V. Privitera, F. La Via, C. Amorphous Ta-Si-N diffusion barriers
Spinella, V. Raineri and E. Rimini 53 (1991) 190 in Si/Al and Si/Cu metallizations, E.
A comparison of Ti films sputtered in an Kolawa, P.J. Pokela, J.S. Reid, J.S.
N,/Ar plasma at 25 and 500°C, J.A. Chen and M.-A. Nicolet 53 (1991) 373
Fair and M. Delfino 53 (19912)0 6 Rapid thermal processing reliability of
Rapid thermal annealing of WSi,. In-situ titanium silicide implanted with ar-
resistance measurements, C. Nobili, senic, boron and phosphorus, F.
M. Bosi, G. Ottaviani, G. Queirolo La Via, V. Privitera and E. Rimini 53 (1991) 377
and L. Bacci 53 (19912)1 9 Tungsten silicide formation from sequen-
Point defect generation during silicide tially sputtered tungsten and silicon
formation, U. Erlesand, M. Ostling, films, J.M. Molarius, S. Franssila, G.
B.G. Svensson and P. Gas 53 (19912)2 4 Drozdy and J. Saarilahti 53 (19913)8 3