ANALOG INTEGRATED CIRCUIT DESIGN DAVID A. JOHNS KEN MARTIN ‘iho nace te imu ign Setanta Mn bennett Tec onan ee SPretbradon pmiat e eis ecu Sr neers ey Compr isn seine Contents CHAPTER 1 WNTEGRATED-CIRCUIT DEVICES AND MODELUNG- 1 1. Seinigemsiersand pn Jutions 1 12 MOS Teristors 4 15 arkanced MOS Medeling —°4 VA Bipolar Jonorian Kransivies 4? LS Device Movil Summary 36 Th SPICE Modoling Paeancrens 6) Li Appendix 65 Va References 7% as 18 CHAPTER2 PROCESSING AND LAYOUT : a LL CMOS Procesing 82 Bipuss Procesins 95 53° CMOS Tayou sid Nesign Rules FA Analog Lay Considerations 108 25 Laghtle 18 Be Rekeenet 12 25 puivene 12 CHAPTERS BASIC CURRENT MIRRORS AND SINGLE-STAGE AMPLIFIERS 125 Li SiopleCMOS Cocua Minar 125 32 Common Swwrss Arapliier 125 3 Seuns-Follewer ue Commun Dssin Amplifier 129 S4 Comments Arplibear 132 35. Sunes Repenerated Craven Mineo 135 3.6 FighCutpuImpedance Coen! Miners 137 23 Caicole Gain Stoge 14D 33 MOS Ditiseena Pir and Gann St 39. BipulieCumoneMieure $46 B.D ipolae Gata Stages RAL ragaincy Responee 1S 32 SPICE Simelicioe Csemmles 169 BIT Tefen 16 14 Probiems 17h ACHAFTIER.A NOISE ANALYSIS AND MODELUNG ‘Tine-Devtin Analesis 18 Bia sencyvnnin Agen T86 Noise Models toe Circuit Flees 196 Noise Auclysis Cocaples 204 References 215 Probes 211 CHAPTER 5 BASIC OPAME DESIGN AND COMPENSATION BA ‘Teusage (MOS Opmup 222 5.2 Peedback and Opamp Compenst 53. SPICL Somulaon Ls 52 Relroney 25 55 Problems 2 CHAPTER 6 ADVANCED CURRENT MIRRORS AND OPAMPS 8.1 Adeamed Curent Mion — 258 2 Fable CascaleOpamp 266 6.3 CumeneMirror Opanip 275, Lins Selling ‘Lime Revisited 208 Gamein-Feedback Oparaps 291 SPICE Shulicioe Examples 298 Retsoncce 249 Problems 50 Y CHAFTER7 COMPARATORS Using an Opp tora Comperaor 208 Charge lajgrion Fens 28 Latched Compuratars 317 Caaciples of CMOS aod ICMAOS Comptes Examples cf Bipour Compscator, 38 Refer 80 Problens 31 181 221 256 04 i Connie CHAPTERS CHAPTER? CHAPTER 10 CHAPTER 11 SAMPLE AND HOLDS, VOLTAGE REFERENCES, AND TRANSUINEAR GRCUITS, 34 8.1 Fecixmance of Supe sn-Hold Cinuits 334 82 MOS Sample awl-Hola Hanes 336 83 Examples CMOS SANCirouies 3d R4 Bipolarand KACMOS Sample aus Holds 348 83 Bandgap Westage Reference Basics 352 48 Cini for Bandgap Re a7 S17 Tranehmear Gin Cell KA Teanstineur Mier 89 Relenwr, —348 KO moms 310 DISCRETE-TIME SIGNALS wa 3.1 Oveniew of Some Sota Sprtia 82 apace Uransoem oF Discrete-Time Sipnats 7 92 ztunsfonm 277 ‘44 Soensampling ans Tpsamping 379 95. Dierete-tine Fiters 382 88 Sumpleid-Hokl Respowse 8B 97 References 381 VA Probleme 31 : SWITCHED-CAPACITOR CIRCUTS 304 $0.1 Basie Talding Blocks 394 102, asic Opersson and Anutysis 398 13 PiesOrder Fite 408 104 RiquadFiters 45 TLS Chacge Injection 25, LOS Soitehed-CapeivarGainCinails 427 107 Comat Ponbe-Sampling Techniques 433 108 Oiler Svitened-Cipuitor Cons 434 109 Roferensss 417 HLID Problems 492 DATA CONVERTER FUNDAMENTALS a5 TLL Ade BIA Converter 5 112 Ideal AD Canceset 447 113 Quinlicwion Nowe 448 TLS Signed Cndes 482 Gonmate 115) Perlarmwace Liaaiaions 454 1156 Refennces abl U7 Problems 461 CHAPTER 12 NYQUIST:RATE D/A CONVERTERS. 463 12.1 DocederBaied Converters 463 122 Ionuey Sealed Cowvesten 468 123 Thomometer-Cade Converers ATS 124 Hybrid Comeners 8 12S Reternonn LS robes ae (CHAPTER 13. NYQUIST-RATE A/D CONVERTERS 47 TAL Integrating Converters 487 132 Snecencive Appinsimation Converts, 492 1X3 Algor vr Cyolc) AMD Cunserter 504 [84 FlihiGorPrlled) Convoners 57 13S Twosp AD Comeness 518 136 Inlecpolaing AD Convenes 516 17 Belding AM Convener 519 TNE Plpeliied AD Consentes 523, TA9.Tim-lvleaved AD Conventrs "526 IE) Refers 527 WRAL Problems 528 CHAPTER 14 OVERSAMPLING CONVERTERS. 531 14.4 Oveesanpling without Noise Shaping 541 182 Overropling wily Noise Shepiog 538 143 System Aehitceres S47 V2 Digital Decimation Fiters $51 443 IligberOnler Moduluors 555 12h Bandpast Oversampling Converters 557 127 Practical Cormeratone $59 12H Miu-Ric Ovorsampling Canverter 129 Thi Onder AD Design Example W410 Refersnses STL 1411 Probiews 372 CHAPTER 15. CONTINUQUS-TIME FILTERS 7a 15.1 Aneoduction 9 Ga Plers 575, 152 RipalirTeamceondacts SR x Cone M08 Transconductors Using Trisde Trmssons 39 EMOS Trunteonductore Using Active Traisurs FE BECMOS teutsconunctnes Al MOSIEECEIINe 620 IS? Thoin Cicuioy 626 IS Dynan was 139 Referens 643 1510 Prosiems oj CHAPTER 16 PHASE-LOCKED LOOPS. a8 161 Basic Loop Acchitesiee 68 12 PLLs with Ghurge-Panp Mase Comparuiors 65 161 VologeContelld Osis 670, id Compu: Simulation af Ps is 16.5 Appontis 689 166 Referees 2 67 Problems 69) INDEX 696 CHAPTER 1 Integrated-Circuit Devices and Modelling Ii tas chap, the apertion and mvadting ef semivonducte deca ade oe Alteugh i posible to do simple impresses wih a bose knowledge fof rericundetor dcvice minding, for Nihenoed tde-oPshieur deni, an i sept undzrstaniag af he occadt-onder elects of device operon amd their model- Ling consider crit eis aseurned tht mast seadets have bec :uulwcel i ast aad hie asia nude in poesine cess. Ths. fundamen semisonduccer concepts ure only Twiewy reviews. Seetim 1.1 deserves pn juactions 107 digdes). Thi section Amposan! in vrvleraanding the parse capasianees in many device models, sch a+ jmeinn capacitances. Sectim [2 cavers MOS Tunssture a woaklRng, Te shld be rowed thet this sec celles ho sone degree tho matvialpresinusly resented in Seatiyn -1, in which devin eapacitanes ws covered. Sectun 1.4 coves bipolar junction tamistos and medelling, A sotamaty ef device model and impacan: wp Tins presen in Ssetnn 1.3. This sumisry i ycticoanly wel ev zeader cho already has 4 goo background in isiniapr tating, in which sae Uke sure cae sed eo fallow che notannn used trouetous Ibe reminder uf Ihe book. fd, amet deserptom i ven ofthe most important procss-related parame tse it SPICT: rualing, Final, this chapter coachudes witha Appenatx enti Sng derivations ofthe rune pysicly ba elec cris. 1.1 SEMICONDUCTORS AND pn JUNCTIONS: A semigonduetor i erst lice siwrtue tk can hae fre elecrone (hich are regia carer) atu fe Des (ichare an ahsones of cles end are equ Teot ro poritivecanieres The ‘ype of semizonducterIepvilly voll siliaon foam sooy celled sor, This ae We vlenae af Fo, plying that each wom hos torr eleceonstoshare wah neighboring noms when frie the sovalnthonds ihe oxytal lative tre eon ch, andoped eicom s a ec pure erst steele Taving ages number of te slecioneundbles, Thesefivecarers aretha loc one dorhufesthat have gana ough ere de tuna station escape thirds ‘Aton temperate thee are agprogitay 15 7 10! samers ofeach yp per ‘ocoquivalelly 1.3 10 cannesin® the manber of car es apprenimately Coubes Fr avey 11% inerents Ww tersperatre, 2 Chopar 1+ Images Creal Deveer ove otal og Foe ope silicun wih a pentavaleatumpurty ia, syns ofan elemenc having sa valence of five. © equislenly five lectins mn the oner shel, seatlale when hovdng ith neighboring stems, tre wll be dans oe ature eketton for every impurity stn, These fee eletans 2a eid Ww oad caren. A pease Tent inp i suid donate fee elton to che ie ry and ths the ime rity kn a6 cbmc Examples wf donee lenis ae phoepins,P, an anseic, AAS, These impurties ate alo cael "ype dapat sinc tne Hee cain, suing fh tiv use have negative cherge. Whe a Type impute ote held me era aegacve caries wr elecnons a altar the hi ve the doping concent, and is meh preter dem Gk sumer of eee elecian® in nie scum, In caer. wort, = Np au where dons te fscslectron apscentation in M-iypemiseria wd Np 1s the oping concentration twill te sutseript D denaing, ds Ou tbe other Wad, che nn Cee bles an ropa tii be src Tee tha the saber ot holes in movie cur and ean be shown "Sze, TOSI 3 be given by cs Jets n ithe saser serena in rine icon, Sinilady. {Cone pes icon wit soma busing a valence of thie fur example boron (i, the nncration Uf penive camisoles wil be approximately oa tw the eergpeor concentration, Ne. be Ne as odie nator sin caries nt Ap n,n. is Ney eel 1 E ¢ EXAMPLE 1 Iutrnse ifeun a6 doped wih bono concentration of 16" stout. At root empeatre, svat are the soncentatene of ules elton inh resuling ped scan? Assume thal ny = 1.510" savior eycatating, ty, ll appre qual dp eoncemtaion (0, 0° Golesi. Te cle someon isan from tr be 11 Semicanducors end pr Juctions 3 = 2310" elects! 1s Such doped silicon isrefened to as peype since it has many more fee holes than fee elections Diodes To realize « diode, or. equivalently. pn junction, one part of a semiconductor i dap tyne. and closely adjacent partis dopod B type, ts shown in Fig. Tse the die, or junction, is formed betwea the p° region and then zegin. It sould be ‘ted thatthe superscripts indicate the velative doping levels. For example, the Br bulk region might have an imparity concentration of $10" caries, wher the andr regions woul! be dpe ne heavily tow valve argu’ 10° 10" eam fri! Also, note tht the metal conics to the diode (inthis ase, aluminum) ate oancted 19 heavily dapod region a apposed to lightly dope region therwise Schortty diode would occur. ‘Schotky diodes are discussed on page 15.) Ths, in fonder not to make a Sehotthy diode, the conection Wo ten region i aetally made via the n rpion. ; In the pt side, lage mimber of foe postive cariers are avaiebi whersas in the n side, many fe native carriers are avllale. The oles in the p side will end to ier or itfse in the side, whereas the Toe electrons in then side will end to diffuse tothe side. This process is very similar oto gases randomly ising, together. Thscifasion Ivers the concentration of re carers inthe rezion between {he two sides. As the two types of eariers dase together, they recombine. Every tlectrun tht diffuses from the side to te p sde leaves behind a bound postive carps close t0 the wansiton region, Simi, every lle tat diffses fom the ‘de leaves hebind a bound electron nar the transition region. The en result i shown in Fig. 12. This diffusion of fie caer estes a depletion region atthe junction of ie bro sides where no tee carries exist and which has a net negative charge onthe side and a ast postive charge om eM sie, The total suman of exposed ve bout ‘rode cathode Si, ° 9 A cathode pnyvreion ° Bulk Fig. 1 Across acon ofp diode
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