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All-electrical detection of spin dynamics in magnetic antidot lattices by the inverse spin Hall effect PDF

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All-electrical detection of spin dynamics in magnetic antidot lattices by the inverse spin Hall effect Matthias B. Jungfleisch,1,a) Wei Zhang,1 Junjia Ding,1 Wanjun Jiang,1 Joseph Sklenar,1,2 John E. Pearson,1 John B. Ketterson,2 and Axel Hoffmann1 1)Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA 2)Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA 6 (Dated: 7 January 2016) 1 0 The understanding of spin dynamics in laterally confined structures on sub-micron length scales has become 2 asignificantaspectofthedevelopmentofnovelmagneticstoragetechnologies. Numerousferromagneticreso- n nance measurements,opticalcharacterizationby KerrmicroscopyandBrillouinlight scatteringspectroscopy a andx-raystudieswerecarriedouttodetectthedynamicsinpatternedmagneticantidotlattices. Here,wein- J vestigate Oersted-fielddrivenspin dynamics in rectangularNi Fe /Ptantidot lattices with different lattice 80 20 6 parametersby electricalmeans and comparethem to micromagnetic simulations. When the system is driven toresonance,adc voltageacrossthelengthofthe sampleisdetectedthatchangesitssignuponfieldreversal, ] which is in agreement with a rectification mechanism based on the inverse spin Hall effect. Furthermore, we l l show that the voltage output scales linearly with the applied microwave drive in the investigated range of a h powers. Our findings have direct implications on the development of engineered magnonics applications and - devices. s e m Magnonic crystals, a new class of metamateri- magnon characteristics of the antidot lattice for real ap- t. als with periodically modulated magnetic properties, plications. ma have emerged as key building blocks in magnonics1. Ononehand,spinHalleffects16,17 havebeenprovento The realization of spin-wave filters2, phase shifters3, be excellent candidates for the interconversion between d- interferometers4, spin-wave logic devices5 and grating electronic charge and spin currents15, and on the other n couplers6 has been demonstrated and it is possible to hand,spinpumping18–22 andspin-transfertorque23,24 ef- o tune the magnonic properties as desired by engineering fects are important methods to transform magnonic sig- c the magnetic properties of the magnonic crystal. In this nals to spin currents and vice vesa25–28. We will focus [ regard, ferromagnetic antidot lattices are prototypes of hereonthedetectionsideoftheconversionpathway: the 1 magnonic crystals. The periodicity, dimensions, shape transformationofamagnonicsignal(spindynamics)into v and material of an antidot lattice dictate the spin-wave 1 frequencies and their spatial distribution. These char- 2 acteristics are influenced by inhomogeneities of internal 2 magneticfieldsinlatticeswithlargerperiods,whereasat 1 smaller periods exchange fields play an important role7. 0 Since those parameters can easily be tuned by designing . 1 the pattern and choosing the proper material, antidot 0 lattices are of fundamental importance in magnonics. 6 Spin dynamics in antidot lattices were investi- 1 : gated by numerous resonance measurements8–10, by v x-ray spectroscopy11 and by optical techniques such i X as Kerr microscopy and Brillouin light scattering spectroscopy8,9,12,13. In order to utilize antidot lattices r a in real magnonic applications, however, it is desirable to integrate them in conventional dc electronic devices and circuitries. The optimal signal processing pathway is14: input electronic charge signal → spin current signal → magnonic signal → spin current signal → output elec- tronic charge signal,see Fig. 1(a). Signalprocessing and FIG.1. (Coloronline)(a)Pathwayforsignalprocessingfrom transfer can be realized by magnons and ultimately it an electronic to a magnonic signal and back. Signal process- wouldbe possible to harnessthe unique andcontrollable ing can be achieved by magnons. (b) Example of a scan- ning electron microscopy image; here: antidot lattice B with a=845nmandb=585nm. (c)Schematicoftheexperimen- ◦ tal setup. The antidot lattice is oriented at 45 with respect to the signal line S. The dimensions a and b are given in a)Electronicmail: jungfl[email protected] Tab. I. 2 (a) TABLE I. Overview of the investigated antidot lattices. Py 9 GHz 4 10 GHz thickness: 15 nm,Pt thickness: 5 nm. V) 11 GHz Antidotlattice lattice constant a (nm) hole width b (nm) µV (DC 2 111234 GGGHHHzzz A 755 519 age 0 B 845 585 c volt -2 d C 942 713 -4 -3000 -2000 -1000 0 1000 2000 3000 Magnetic field H (Oe) an electronic dc charge signal, see Fig. 1(a). (b) Experiment (c) Simulation In this Letter, we investigate spin dynamics in rect- 14 14 angular antidot lattices made of bilayers consisting of Hz) 12 Hz) 12 G G a ferromagnetic Ni80Fe20 layer (permalloy, Py) and a y f ( 10 y f ( 10 c c Pt capping layer with varying dimensions and period- en 8 en 8 u 1st u icity. In contrastto conventionalresonanceexperiments, eq 6 2nd eq 6 Fr 3rd Fr where dynamics is driven by a microwave signal and the 4 4 1000 2000 3000 1000 2000 3000 response of the magnetic systems is quantified by an ab- Magnetic field H (Oe) Magnetic field H (Oe) sorptionmethod,weusearectificationmechanismbased on pure dc techniques. Spin dynamics in the Py layer FIG.2. (Coloronline)(a)Typicaldcvoltagespectrum(here: are induced by a microwavedriven Oerstedfield and de- antidotlatticeB)measuredatanappliedpowerof+15dBm. tected by dc voltage that is explained by a rectification The low frequency spectra are omitted to provide better based on the inverse spin Hall effect (ISHE) in the Pt. readability. The resonance signals show a mostly symmet- Itis shownthatvariousmodes determined bythe design ric Lorentzian lineshape and change their polarity upon field of the pattern contribute to the dc voltage proving the reversal. (b) Frequency vs. field relation extracted from the possibility to utilize engineeredantidotlattices for infor- spectrum shown in Fig. 2(a) for thethreemodes that can be mation processing/transportintegrated in dc circuitries. identified clearly. (c) Simulated frequency vs. field relation, Themodespectrumisconfirmedbymicromagneticsimu- here: antidot lattice B. lations. Powerdependentmeasurementsconfirmalinear response of the antidot lattice, which is desirable for the ◦ field are oriented at an angle of 45 ], whereas the square development of electronic devices. antidot lattice is oriented parallel to it. Magnetization The samples were fabricated in the following fash- dynamics is excited by the Oersted field generated by a ion: In a first step, dc leads were fabricated by mag- microwave current in the CPW. We use an amplitude netron sputtering and photolithography on intrinsic Si modulationofthe signalgeneratorandlock-intechnique substrates with a 300 nm thick thermally grown SiO 2 to detect the dc voltage output. For a particular mea- layer. The antidot lattices of various dimensions were surement, the rf power and frequency are kept constant then written by electron beam lithography (see Tab. I). (power range +10 to +18 dBm, frequency range: 4 to A double layer positive resist of PMMA was spin-coated 14 GHz) while the external magnetic field is swept and prior to electron beam exposure. After exposure and the dc output is recorded. When the system is driven to development, 15 nm-thick permalloy and 5 nm-thick Pt resonance, the magnetization precession in the Py layer layersweredepositedusingelectronbeamevaporationat generatesaspinaccumulationatthePy/Ptinterfacethat rates of<0.3 ˚A/s without breakingthe vacuum. The re- diffuses into the Pt layer, a phenomenon that is known sistwaslifted-off inacetone. Figure 1(b) showsa typical as spin pumping effect18. This spin current gives rise to scanning electron microscopy image (SEM), for lattice anelectronicchargeimbalanceinthe Ptlayerdue to the B, see Tab. I. The antidot lattices cover an area of ap- inversespinHalleffect. The conversionfroma spin-into proximately800×20µm2 intotalandthelateraldimen- charge current is described by: sions of each investigated antidot lattice is summarized in Tab. I. In a subsequent step a 50 Ω-matched coplanar J~ ∝θ J~ ×~σ, (1) C SH S waveguide (CPW) made of Ti/Au (3 nm/150 nm) was fabricated by magnetron sputtering and photolithogra- whereJ~C isthe charge-currentdensity, θSH the spinHall phy. The antidot lattice and the CPW were separated angle that describes the efficiency of the conversion, J~ S by a 80 nm-thick MgO layer to avoid any electrical con- is the spin-current density and~σ is the spin polarization tact and the dc leads are kept between the central line vector. and the ground plate within the CPW in order to mini- The investigation of different mode spectra in antidot mize inductively coupled currents in the sample. lattices and the examination of the underlying effects is Figure 1(c) illustrates the experimental setup and the very intriguing and subject of many studies in magnon- measurement configuration. The microwave driven Oer- ics. However, we focus here on the fact that these well sted field (in y-direction) is aligned at 45◦ to the exter- knownresonancescanindeedbedetectedbypuredcelec- nalmagnetic field[in(1,1)-direction;CPWandexternal tricalmeans. Atypicalbi-polarspectrumrecordedatan 3 expected and experimentally observed spectra is found. A As in experiment three modes are found in the investi- Lattice B Lattice C gated magnetic field range, see Fig. 2(c). Lattice Figure3comparesthedcvoltagespectrumoftheinves- C tigatedantidot lattices,excited at 6 GHz and +15dBm. D e V The different lattices show distinct features in the mode ag structure. The modes of lattice A and C lie closer volt together than those of B, leading to the conclusion c d that dipolar interactions emerging for narrower stadium widths (a−b) are the dominant tuning parameter here 2 µV (see Tab. I). On the other hand, for the larger width b, a larger resonance field is observed. This can be under- stood as a decrease of demagnetization with increasing -2000 -1000 0 1000 2000 b and, thus, an increase of the resonance field at a par- Magnetic field H (Oe) ticular excitationfrequency10. The magnitude of the de- tected voltage is basically independent of the lattice pa- FIG. 3. (Color online) Comparison of the voltage spectra of rameters,seeFig.3. Thisdemonstratesthepossibilityto the different antidot lattices at a fixed excitation frequency tune the magnonic frequency characteristics as desired. of 6 GHz and microwave power of +15 dBm. The lattices Next, we will focus on power-dependent studies. Lin- featurethefollowing stadiumwidths(a−b)andwholewidth b. A: (a−b) = 236 nm, b = 519 nm, B: (a−b) = 260 nm, ear response is a necessary requirement for the utiliza- b=585 nm, C: (a−b)=229 nm, b=713 nm. tion of potential magnonic devices in electrical circuits. Therefore, we carried out microwave power dependent measurements. As is apparent from the power depen- dence shown in Fig. 4 that the dc signals of all three applied power of +15 dBm is shown in Fig. 2(a) (here modesincreasewithpower. Themagnitudeoftheoutput shown: antidot lattice B). We clearly observe distinct signalofeachmodeasafunctionofpowerisshowninthe modesinthedcspectraatparticularfrequency–fieldval- insetinFig.4(pleasenotethelinearscale;P inmW).We ues. Thelow-frequencymodesarenotshowninFig.2(a) can draw two important conclusions from this measure- to increase the readability of the viewgraph. As is ap- ment. Firstly,weobservealinearresponseofthesystem: parent from the figure, the modes exhibit a mostly sym- the output signal increases linearly with the drive in the metric Lorentzian lineshape. The most likely source for investigatedrangeofappliedpowers. Thisshowsthatwe this behavior is a spin-to-charge current conversion due operateinthelinearregimeandnononlineardynamicsis to the ISHE. For anunstructured sample orientedin the excited. Secondly,thefirstandthirdmodeshowapprox- samewayashereoriftherewasasubstantialphaseshift betweentherf currentandthemagnetizationoscillation present,wewouldexpecttoobservealargerantisymmet- 5 riccontributionifthesignalwasdominantlygeneratedby V) +10 dBm µ a rectification due to the anisotropic magnetoresistance +12 dBm (C4 2nd (AMR)29. Besidesthat,thepolarityofthevoltagesignal 4 +14 dBm VD3 changessignwhenthemagnetizationdirectionischanged V) +16 dBm ge 2 [Fig. 2(a)], which also suggests that the observed volt- µ (DC 3 +18 dBm 2nd volta 1 1st3rd age is most likely due to the ISHE29, Eq. (1). However, e V dc othereffectssuchasspinrectification29,magnoniccharge ag 2 1st 10 20 30 40 50 60 pInudmeppeinngd3e0n,3t1oofrtAhMe Rre2c9ticfiacnantiootnbme ceochmapnliestmelythreuleedxpoeurti-. dc volt 1 u Power P3 (rmdW)v mental data unambiguously demonstrates an easy way to detect spin dynamics in magnonic crystals by pure dc 0 electrical means. Furthermore, it is interesting to note thatthe magnitude ofthe detecteddc signaliscompara- 0 500 1000 1500 2000 2500 3000 ble to that of unpatterned Py/Pt stripes32. In the spec- Magnetic field H (Oe) trum shown in Fig. 2(a) we can clearly distinguish three different modes. We analyze their frequency–magnetic FIG. 4. (Color online) Voltage spectrum as function of the fielddependenceasshowninFig.2(b). Asexpectedfrom applied microwave power at an fixed excitation frequency of the Kittel equation, the resonance frequency increases 10 GHz (antidot lattice A). Three modes denoted as 1st, with the externally applied magnetic field. In order to 2nd and 3rd, are detectable at all microwave powers. At corroborate the experimentally observed spectra, micro- higherpowers additional modes (labeled as uand v) emerge. magneticsimulationswereperformedusingmumax333,34. The inset illustrates the linearity of the generated dc output Anexceptionalgoodagreementbetweenthetheoretically voltagewith power; please notethelinearscale of thepower. 4 imately the same powerdependence, whereasthe second G.Woltersdorf,G.Gubbiotti,C.H.Back,andD.Grundler,Phys. mode increasesmuchfaster withpower. This might par- Rev.Lett. 105,067208(2010). ticularly be of interest for the development of magnonic 9M.J.Pechan,C.Yu,R.L.Compton,J.P.Park,andP.A.Crowell, J.Appl.Phys.97,10J903(2005). devices where frequency/field dependent threshold out- 10J.Sklenar,V.S.Bhat,L.E.DeLong,O.Heinonen,andJ.B.Ket- put signals can be addressedby choosing an appropriate terson,Appl.Phys.Lett.102,152412(2013). excitationpower. Moreover,additionalmodes,whichare 11J. Gr¨afe, F. Haering, T. Tietze, P. Audehm, M. Weigand, notdetectable atlowpowersemergeathigherexcitation U.Wiedwald,P.Ziemann,P.Gawron´ski,G.Schu¨tz,andE.J.Go- powers, e.g., at 1100 Oe and 2800 Oe for f = 10 GHz ering,Nanotechnology 26,225203(2015). 12G. Gubbiotti, F. Montoncello, S. Tacchi, M. Madami, G. Car- (labeled as u and v in Fig. 4). Since we observe a linear lotti, L. Giovannini, J. Ding, and A.O. Adeyeye, Appl. 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