Advances in Silicon Carbide Processing and Applications

229 Pages·2004·6.237 MB·English

by  Stephen E. Saddow, Anant Agarwal

Advances in Silicon Carbide
Processing and Applications
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Advances in Silicon Carbide
Processing and Applications
Stephen E. Saddow
Anant Agarwal
Editors
Artech House, Inc.
Boston • London
www.artechhouse.com
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BritishLibraryCataloguinginPublicationData
Advances in silicon carbide processing and applications.—(Artech House semiconductor
materialsanddeviceslibrary).
1.Siliconcarbide 2.Siliconcarbide—Industrialapplications
I.Saddow,StephenE. II.Agarwal,Anant
321.3’8152
ISBN1-58053-740-5
CoverdesignbyIgorValdman
©2004ARTECHHOUSE,INC.
685CantonStreet
Norwood,MA02062
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InternationalStandardBookNumber:1-58053-740-5
10987654321
Toourwives,KarenandSuman,fortheirloveandpatience
.
Contents
Preface xi
Acknowledgments xiii
CHAPTER 1
Silicon Carbide Overview 1
1.1 GeneralProperties 1
1.1.1 MechanicalandChemicalProperties 2
1.1.2 Bandgap 2
1.1.3 CriticalField 2
1.1.4 SaturatedDriftVelocity 3
1.1.5 ThermalConductivity 3
1.1.6 FiguresofMerit 4
1.2 History 4
1.2.1 BerzeliusandAcheson 4
1.2.2 TheDiscoveryofPolytypism 6
1.2.3 TheFirstLEDandtheLelyProcess 6
1.2.4 TheLostDecades 7
1.2.5 TheSecondWave 7
1.2.6 TheThirdWave 7
1.3 CrystallineStructure 8
1.3.1 BasicStructure 8
1.3.2 Polytypism 8
1.3.3 ImpuritiesinDifferentPolytypes 9
1.4 CrystalGrowth 11
1.4.1 SeededSublimationGrowth 11
1.4.2 HighTemperatureChemicalVaporDeposition 14
1.5 EpitaxialGrowth 18
1.5.1 ChemicalVaporDeposition 18
1.6 Defects 21
1.6.1 Micropipes 21
1.6.2 StackingFaults 22
1.7 CommercialOutlook 22
1.7.1 High-FrequencyApplications 23
1.8 Summary 25
References 26
vii
viii Contents
CHAPTER 2
High-Temperature SiC-FET Chemical Gas Sensors 29
2.1 Introduction 29
2.2 DetectionMechanismofField-EffectGasSensors 30
2.2.1 GasSensingPrinciple 30
2.2.2 DetectionofDifferentMolecules 31
2.2.3 InfluenceofOxygen 34
2.2.4 InfluenceofDifferentMetals 35
2.2.5 InfluenceofTemperature 36
2.2.6 SensorArrays 36
2.3 Field-EffectChemicalGasSensorDevices 38
2.3.1 Capacitors 38
2.3.2 SchottkyDiodes 38
2.3.3 TheP-NJunctionDiode 43
2.3.4 Field-EffectTransistors 44
2.4 SensorPropertiesatElevatedTemperatures,InfluenceofHydrogen 49
2.4.1 InfluenceofHydrogenonCapacitors 50
2.4.2 InfluenceofHydrogenonSchottkyDiodes 51
2.5 MoreSensorProperties 53
2.5.1 SpeedofResponse 53
2.5.2 Long-TermStability 56
2.6 Experimental 57
2.6.1 SamplePreparation 57
2.6.2 GateMetalDeposition 57
2.6.3 Mounting 58
2.6.4 DeviceOperation 58
2.7 Applications 59
2.7.1 PetrolEngineExhausts 59
2.7.2 DieselEngineExhausts 60
2.7.3 FlueGasMonitoring 61
2.8 OutlookandConclusions 62
Acknowledgments 63
References 63
CHAPTER 3
Silicon Carbide Technology and Power Electronics Applications 69
3.1 DC-DCConversion 69
3.1.1 SMPCCircuitTopologiesandOperation 70
3.1.2 SiliconCarbideDevicesinSMPCApplications 73
3.1.3 OtherSiCSwitches 78
3.1.4 SiCAC-DCInverterExample 79
3.2 DC-ACPowerConversion 80
3.2.1 DC-ACPowerInverter 80
3.2.2 InverterControlTechniques 81
3.2.3 SiCDC-ACInverterExample 82
3.3 Pulsed-PowerApplications 91
3.3.1 ThyristorBasics 92