Table Of ContentAdvanced Electronic Technologies and Systems
Based on Low-Dimensional Quantum Devices
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3. High Technology - Vol. 42
Advanced Electronic
Technologies and Systems
Based on Low-Dimensional
Quantum Devices
edited by
Minko Balkanski
Universite Pierre et Marie Curie,
Paris, France
and
Nikolai Andreev
Technical University of Sofia,
Sofia, Bulgaria
Springer-Science+Business Media, BV
Proceedings of the NATO Advanced Study Instute on
Advanced Electronic Technologies and Systems Based on Low-Dimensional Quan-
tum Devices
Sozopol, Bulgaria
18-28 September 1996
A C.I.P. Catalogue record for this book is available from the Library of Congress.
ISBN 978-90-481-4964-3 ISBN 978-94-015-8965-9 (eBook)
DOI 10.1007/978-94-015-8965-9
Printed an acid-free paper
AII Rights Reserved
© 1997 Springer Science+Business Media Dordrecht
Originally published by Kluwer Academic Publishers in 1997
Softcover reprint of the hardcover 1s t edition 1997
No part of the material protected by this copyright notice may be reproduced or
utilized in any form or by any means, electronic or mechanical, including photo-
copying, recording or by any information storage and retrieval system, without written
permission from the copyright owner.
TABLE OF CONTENTS
Preface Xl
Acknowledgments XIX
1. Fnndamentals on Quantum Structures for Electro-Optical
Devices and Systems
1.1 Electron State Symmetries and Optical Selection Rilles in the
(GaAs)m(AIAs)n Superlattices Grown Along the [001], [110], and [111]
Directions.
Yu. E. Kitaev, A. G. Panfilov, P. TroncandR. A. Evarestov
1.1.1 Electronic Structure of AlAs/GaAs Superlattices with an
Embedded Centered GaAs Quantum Well.
V. Donchev, Tzv. Ivanov andK. Gennanova 51
1.1.2 Electronic States in Graded Composition Quantum Wells under a
Constant Electric Field.
S. Vlaev, A. Miteva and V. Don<.:hev 55
1.1.3 Dimension Related Effects on the Structure Perfection in Si/SiC
Milltilayer Structures.
E. Valcheva, T. Paskova, O. Kordina, R. Yakimova, E. Janzen 59
1.1.4 Effect of the Non-Parabolicity and Dynamical Screening on the
Second-Hannonic Generation in Doubly Resonant Asymmetric
Quantum Well Structures.
M. Zaluzny and V. Bondarenko 63
1.1.5 Optical Diagnostics of Quantum Dots in GaAsIlnxGal_xAs
Heterostructures.
V. Ya. Aleshkin, V. M. Danil'tsev, O. I. Khrykin, Z. F.
Krasil'nik, D. G. Revin, V. I. Shashkin 65
1.1.6 Generation of High - Frequency Oscillations by Electromagnetic
VI
Shock Wave (EMSW) in Nonlinear Transmission lines on the Basis of
Multilayer Heterostructures.
A. B. Kozyrev and A. M. Belyantsev 67
1.1.7 Picosecond Spectroscopy Studies of CuS and CuInS Quantum
2
Dots with Chemically Modified Surface.
A. M. Malyarevich, K. V. Yumashev, P. V. Prokoshin, M. V.
Artemyev, V. S. GurinandV. P. Mikhailov 69
1.1.8 Intensity Induced Polarization Rotation due to Cascading in
ImbalancedType II Nearly Phase Matched Frequency Doubling.
S. Saltiel, I. Buchvarov, K. Koynov, P. Tzankov and Ch. Iglev 71
1.2 Modeling Quantum Well Laser Diode Structures.
P. Blood, D.L. Foulger and P.M. Smowton 77
1.2.1 Silicium Crystal Photoluminescence as Transducer for
Biosensors.
N. F. Starodub, L. L. Fedorenko, V. M. Starodub, S. P. Dikij 91
1.2.2 Injection Lasers based on Vertically Coupled Quantum Dots.
A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh,
N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, N.
Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev. 93
1.2.3 Infrared Emission of Hot Holes in Strained Multi-Quantum-
Well Heterostructures InGaAs/GaAs under Real Space Transfer.
V. Ya. Aleshkin, A. A. Andmnov, A. V. Antonov, N. A.
Bekin, V. I. Gavrilenko, D. G. Revin, E. R. Lin'kova, I. G.
Matkina, E. A. Uskova andB. N. Zvonkov 97
1.3 Microcavity Semiconductor Lasers
J. G. McInerney, Damien P. Courtney, Peter M. W. Skovgaard arrl
Brian Corbett 99
VII
2. MQW Optoelectronic Devices and Systems
2.1 Exciton Absorption Saturation and Camer Transport in Quantum
Well Semiconductors.
A. Miller, T. M. Holden, G. T. Kennedy, A. R. Cameron and P.
Riblet 117
2.2. IntegratedOptoelectronics - the Next Technological Revolution.
A.S. Popov 137
2.3. Opportunities of Vertical - Cavity - Surface - Emitting Lasers
(VCSEL) in display and optical communication systems.
A.S. Popov 155
2.4. New Integrated Photoreceiver Systems - Charge Coupled Devices
(CCD).
A.S.Popov 175
2.5. Optical Switches and Modulators for Integrated Optoelectronic
Systems.
A.S.Popov 189
2.5.1 Scalar Off-Resonant Modulation Instabilities in Genernl
Rare-Earth Doped Fiber Amplifying Devices.
T. Mirtchev 201
2.5.2 Quantum Dot Laser With High Temperature Stability of
Threshold Current Density.
A.R. Kovsh, A.E. Zhukov, M.A. Odnoblyudov, A. Yu.
Egorov, Y.M. Ustinov, N.N. Ledentsov, M.Y. Maksimov,
A.F. Tsatsul'nikov, N. Yu. Gordeev, S.Y. Zaitsev and P.S.
Kop'ev 207
VJ1l
3. Soliton-Based Switching, Gating and Transmission
Systems
3.1 Soliton-Based Logic Gates and Soliton Transmission Systems.
A. D. Boardman,R. Putman andK. Xie 209
3.1.1 100 GHz * 100 km Optical Soliton Data Transmission
System, Basedon Gradient Distributed Er3+ - Doped Fiber Amplifiers.
T. Mirtchev 267
3.1.2 Control of Lightguiding in H:LiTa03 and H:LiNb03 Thin
Films.
C. C. Ziling, V. V. Atuchin, I. Savatinova, S. Tonchev, M. N.
Armenise and V. N. Passaro 277
3.1.3 Self - Phase Modulation due to Third-Order Cascading:
Application to All-Optical Switching Devices.
S. Tanev,K. Koynov, S. Saltiel, K. XieandA. D. Boardman 281
Index 289
NA TO ASI held in Sozopol, Bulgaria, September 18-28, 1996
ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED
ON LOW- DIMENSIONAL QUANTUM DEVICES
Sponsored by
NATO Scientific and Environmental Affairs Division
Ministere de I 'Enseignement Superieur et de la Recherche, France
Universite Pierre et Marie Curie, Paris, France
University St. Kliment Ohridski, Sofia, Bulgaria
Technical University, Sofia, Bulgaria
Institut des Hautes Etudes pour Ie development de la Culture, de la Science et
de la Technologie en Bulgarie, Paris, France.
Principal School Support
NATO Program for Priority on High Technology
Bulbank, Bulgarian Bank for Foreign Trade, Sofia, Bulgaria
Universite Pierre et Marie Curie, Paris, France
IX
PREFACE
This volume on Advanced Electronic Technologies and Systems based on Low-
Dimensional Quantum Devices closes a three years series of NATO - AS!' s.
The first year was focused on the fundamental properties and applications. The second year
was devoted to Devices Based on Low-Dimensional Semiconductor Structures. The third year is
covering Systems Based on Low-Dimensional Quantum Semiconductor Devices.
The three volumes containing the lectures given at the three successive NATO - ASI's
constitute a complete review on the latest advances in semiconductor Science and Technology
from the methods of fabrication of the quantum structures through the fundamental physics am
basic knowledge of properties and projection of performances to the technology of devices and
systems.
In the first volume: " Fabrication, Properties and Application of Low Dimensional
Semiconductors" are described the practical ways in which quantum structures are produced, the
present status of the technology, difficulties encountered, and advances to be expected. The basic
theory of Quantum Wells, Double Quantum Wells and Superlattices is introduced and the
fundamental aspects of their optical properties are presented. The effect of reduction of
dimensionality on lattice dynamics of quantum structures is also discussed.
In the second volume: " Devices Based on Low Dimensional Structures" the fundamentals
of quantum structures and devices in the two major fields: Electro-Optical Devices and
Pseudomorphic High Eectron Mobility Transistors are extensively discussed.
Xl
