Emerging Technologies for In Situ Processing PDF
Preview Emerging Technologies for In Situ Processing
Emerging Technologies for In Situ Processing NATO ASI Series Advanced Science Institutes Series A Series presentingthe results of activities sponsored by the NATO Science Committee, which aims at the dissemination of advanced scientific and technological knowledge, with a view to strengthening links between scientific communities. The Series is published by an international board of publishers in conjunction with the NATO Scientific Affairs Division A Life Sciences Plenum Publishing Corporation B Physics London and New York C Mathematical D. Reidel Publishing Company and Physical Sciences Dordrecht, Boston, Lancaster and Tokyo D Behavioural and Social Sciences Martinus Nijhoff Publishers E Applied Sciences Dordrecht, Boston and Lancaster F Computer and Systems Sciences Springer-Verlag G Ecological Sciences Berlin, Heidelberg, New York, London, H Cell Biology Paris and Tokyo Series E: Applied Sciences - No. 139 Emerging Technologies for In Situ Processing edited by Daniel J. Ehrlich Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts, U.S.A. and Van Tran Nguyen Director/Physics and Technologies Research Division, CNET-Grenoble, France ~. II 1988 Martinus Nijhoff Publishers Dordrecht / Boston / Lancaster • Published in cooperation with NATO Scientific Affairs Division Proceedings of the NATO Advanced Research Workshop on Emerging Technologies for In Situ Processing Cargese, France May 4-8, 1987 Library of Congress Cataloging in Publication Data Nato Advanced Research Workshop on "Emerging Technologies for In Situ Processing" (1987: Cargese. Corsica) Emerging technologies for in situ processing I edited by Daniel J. Ehrlich and Van Tran Nguyen. p. cm. -- (NATO ASI series. Series E. Applied sciences; no. 139) "Proceedings of the NATO Advanced Research Workshop on 'Emerging Technologies for In Situ Processing.' Cargese. France. May 4-8. 1987"--T.p. verso. "Publlshed in cooperation with NATO Scientific Affairs Division. Includes bibliographies and index. 1. Integrated circuits--Very large scale integration--Design and construction--Congresses. I. Ehrllch. Daniel J. II. Nguyen. Van Tran. III. North Atlantic Treaty Orgarization. Scientiflc Affairs Division. IV. Title. V. Series. TK7874.N334 1987 621.395--dc19 88-15503 CIP ISBN-13: 978-94-010-7130-7 e-ISBN-13: 978-94-009-1409-4 DO I: 10.1007/978-94-009-1409-4 Distributors for the United States and Canada: Kluwer Academic Publishers, 101 Philip Drive, Norwell, MA 02061, USA Distributors for the UK and Ireland: Kluwer Academic Publishers, MTP Press Ltd, Falcon House, Queen Square, Lancaster LA 1 1R N, UK Distributors for all other countries: Kluwer Academic Publishers Group, Distribution Center, P.O. Box 322, 3300 AH Dordrecht, The Netherlands All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, mechanical, photocopying, recording, or otherwise, without the prior written permission of the publishers, Martinus Nijhoff Publishers, P.O. Box 163, 3300 AD Dordrecht, The Netherlands. © 1988 by Martinus Nijhoff Publishers, Dordrecht. Softcover reprint of the hardcover 1s t edition 1988 TABLE OF <DNI'ENTS PREFACE ix 1. H. Ahmed In-Situ Processing Canbining MBE, Lit:hJgraphy and Ion-Implantation 2. 1. Hayashi M::>tivations and Early DenDnstrations for In-Situ Prcx::essings For III -V Semiconductor Devices 13 3. John J. Ritsko Laser Etchi.nJ and Microelectronic Applications 23 4. D. Bauerle, T. Szorenyi, G.Q. Zhang, K. Piglmayer, M. Eyett, R.Kullmer Laser-Induced O1emical Processing of Materials 33 5. E.L. Hu High Technology Manufacturing : Critical Issues for the Future 45 6. J.P. Harbison, P.F. Liao, D.M. Hwang, E. Kapon, M.C. Tamargo, G.E. Derkits Jr. and J. Levkoff U1 tra High Vacuum Processing : MBE 55 7. P.N. Favennec, H. L'Haridon, M. Salvi, L. Henry, A. Le Cerre, D. Lecrosnier, M.A. Di Forte Poisson, J. P. Duchemin Epitaxial Growth of III-V Materials on Implanted III-V Substrates 61 8. R.L. Jackson, T.T. Kodas, G.W. Tyndall, T.H. Baum and P.B. Canita Mechanisms of Laser-Induced Deposition fran the Gas Phase 71 9. D. Braichotte and H. Van Den Bergh Tline Resolved Measurements in the Thennally Assisted Photolytic Laser O1emical Vapor Deposition of Platinum 83 10. M. Rothschild and D.J. Ehrlich Excliner Laser Projection Patterning 93 11. P.H. Key, P.E. Dyer, R.D. GreenJugh Excliner Laser Patterning and Etchi.nJ of Metals 105 12. G. Steng1, H. Loschner, E. Hanme1, E.D. Wolf, J.J. Muray Ion Projection Lit:hJgraphy 113 13. J. E. Bouree and J. Flicstein W Light-AsSisted Deposition of A1 on Si fran 'IMA 121 14. M. Green, C. Aidinis and O. Fako1ujo E-Beam Induced Decxmposition of IJ'X)rganic Solids 131 vi 15. T. Dupeux, P. Del:oux-Dauphin, G. Nicolas Electronic Cconectien Through Siliccn Wafers 137 16. C.J. Brierley, F.W. Ai.rger, C. Trondle The Developnent and Use of Novel Precursors for Photolytic DeIX>Sitien of Dielectric Films 145 17. J. Me~ailis, A.D. Dubner, J.S. Re, G.M. Shedd, H. Lezec and C. V. TOCmpsan Focused Ion Beam Induced DeIX>Si tien 153 18. R. Putzar, H.C. Petzold, U. Weigmann Laser-Induced Metal DeIX>Si tien for Clear Defect Repair \'brk en X-Ray Masks 163 19. 1.W . Boyd and F. Micheli Confix:matien of the Wavelerqth Dependence of Siliccn Oxidatien Induced By Visible Radiatien 171 20. A.J. Steckl, J.C. Oorel1i, J.F. McDonald Focused Ien Beam Technology and Applicaticns 179 21. G. Auvert, Y. Pauleau and D. Tonneau Laser Direct Writ irg for Device Applicaticns 201 22. J.L. Peyre, D. Riviere, 01. Varmier and G. Villela Laser-Induced Photoetch:lrg of Semiccnductors with Ollorine 213 23. S.J.C. Irvine, M.C. Ward and J.B. M..lllin Recent Advances in Photo-Epitaxy for Infrared Detector Fabrication 221 24. E. Borsella, L. Caneve, R. Fantcni Synthesis and Olaracterizatien of Laser Driven Powders 233 25. C. Al:n:lne and C. Zizzo Physical Properties of Laser Written Olranium Oxide Thin Films 241 26. E. Fogarassy, A. Slaoui, C. Fuchs W Laser Induced Oxidatien of Siliccn in Solid and Liquid Phase Regime 249 27. O. Cllevrier and A. Boucbu Laser Assisted Plasma Etch:irg of Siliccn Dioxide 257 28. S. Leppavuori, J. Lenkkeri and J. Levoska Nd : Yag Laser Processirg for Circuit IOOdificatien and Direct Writ :irg of Siliccn Conductors 265 29. T. Baller, G.N.A. Van Veen and J. Die1eman Study of Exciroer laser Enhanced Etch:irg of Copper and Siliccn With (SUB) M:n:>layer Coverages of Ollorine 273 vii 30. R.B. Jackman and J.S. Foord Surface Cllanical Probes and Their Application to the Study of In Situ Semiconductor Processing 279 Subj ect Index 289 PREFACE The Worksh:>p on Emerging Techn::>logies for in situ Processing was held in C8rgese, France on the dates 4-8 May 1987. The site was the Instib,ite d'Etudes Scientifiques de C8rgese of the University of Nice. r-bre than seventy scientists and engineers working on microelectronics techn::>logy and semiconductor physics were in attendance. Principal support was provided by the Advanced Research WorksOOp Prograrn of the North Atlantic Treaty Organization (NATO) under the administration of Drs. Di Lullo and Sinclair. Additional technical stimulus was through the NATO RSG II Group. The ideas of in situ processing of microelectronics are based on the new and potentially revolutionary rxmlithJgraphic techn::>logies which may permit the fabrication of semiconductor devices by dramatically simpler and rrore precise metlxJds than thJse of current techn::>logy. A heavy reliance is on partially yet-to-be-invented bearn-controlled techniques for microfabrication. Although fragments of the necessary understanding and techn::>logy had begun to appear in the scientific literature at the time of the Worksh:>p, no previous international meeting had been organized on the topic. The worksOOp was organized to focus thinking on the key problems and potential implications of such a techn::>logy. The underlying principle of in situ processing is the replacement of current indirect photoresist microfabrication sequences with direct photon-electron, and ion-bearn-controlled techniques based on microscopic reactions on the semiconductor. This approach, in principle, permits an elimination of the current solvent and air exposure, Im:Jwn to degrade critical electronic surfaces in resist processing. One possibility that has been raised is the cx:rnplete processing of electronic devices wit hin a single advanced vacuum chamber, in sanething of an extension of current rroleculdI" bearn epitaxy techn::>logy. A second possibility, already partly realized, is that of "real-time" fabrication (again without photoresists) for the purpose of highly precise "closed-loop" construction of microdevices. An incentive here is to streamline conception, design and fabrication sequences to allCM rrore efficient realization of new device ideas. Current fabrication techn::>logy is ponderously SlCM, inordinately expensive for phototyping, and Im:Jwn to be a limitation in new device and circuit design. The operating thesis of in situ processing is to canbine various existing and future bearn techn::>logies with cx:rnpatible current non-bearn metlxJds to achieve totally vacuum and/or real-time fabrication. The worksh:>p was organized to discuss the current state of affairs of the relevant ccmponent techn::>logies and identify the needs for basic and applied research. Speakers were asked to specifically discuss the potential "revolutionary" implications of in situ processing and to point to critical obstacles to such techn::>logy. In all, 34 papers were presented. The first day of the worksh:>p was cx:rnposed of a series of widely ranging invited papers designed to define the scope of the meeting. Prof. Haroon Ahned (Cambridge University) discussed "In Situ Processing Systems canbining MBE, LithJgraphy, and Ion Implantation". Dr. lzuo Hayashi (The Optoelectronics Joint Research Project) then spoke on "r-btivation and Early Dem:nstrations For In Situ processing of III-V Canpounds". Dr. John Rit sko ( IEM) then presented a SLIIlI11arY of "Laser Etching and Micro- ix x electrcnic Applications" , and Prof. Dieter Bauerle (Johannes-Kepler University) spoke on "01emical Process:ing With Lasers". A review of "High Techn;)logy Manufactur:ing : Critical Issues for the Future" was presented by Prof. Evelyn Hu (University of california - Santa Barbara). On the second day overview papers were given by Drs. Robert Jackscn (IBM) on "Laser Deposition" and MJrdechai Rothschild (MIT Lincoln Laboratory) on "Ex:imer Laser Projection Techn;)logy". On the third day, Prof. Andrew Steckl SUl11I18rized "Focused Ion Beam Techrnlogy and Applications" and Dr. Geoffroy Auvert (CNET Greroble) discussed "Laser Direct Writ:ing for Device Applications". On the fourth day, invited papers were presented by Dr. James Harbison (Belloore) on "Ultrahigh Vacuum Process:ing MBE" and by Dr. stuart I:rvine (RSRE-Malvern) on "Recent Advances in Proto-Epitaxy for Infrared Detector Fabrication" • The final day of the ~rksOOp was highlighted by an invited paper delivered by Prof. Richard Jackman (Univ. of Oxford) on "Surface O1emical Probes and their Applications to the Study of In-Situ Semiccnductor Process:ing" • The Ccnference Cllainnen wish to express their deeply felt thanks to a few whJ made critical contributions in the organization of the ~:tkshop : Forem:>st of these is Dr. Josselyne de M:ntlaur of the DRET, whJ provided extensive advice and pragmatic help. Critical help was also received fran Dr. John Melngailis of MIT. We thank the session chai:rnen H. Ahmed, M. Green, J. Haigh, K. Malloy and R. Reyrolds for their expertise in orchestrat:ing the discussion and Mnes Annie Bernard, Annick Raharijaona, Brigitte Sohy, Michele Thedrel and Moo Marie France Hanseler for their assistance. we also thank Drs. Brian Holeman and Jack Kennedy of NATO for provid:ing sane of the initial stimulus. Finally we wish to express our deep appreciation for the encooragement and support of Dr. Di Lullo whJ died dur:ing the time of the early plaI'lfl:ing of the ~rksOOp. Daniel J. Ehrlich Van Tran Nguyen IN-SITU PROCESSING COMBINING MBE, LITHOGRAPHY AND ION IMPLANTATION H.AHMED Microelectronics Research Group, Department of Physics, Cambridge University, Cambridge Science Park, Milton Road, Cambridge CB4 4FW. 1. INTRODUCTION The current interest in the physics of low dimensionality has required a re-examination of the techniques for microfabrication developed originally for the fabrication of semiconductor integrated circuits. The new requirements place great emphasis on the growth of layers of high purity, crystalline perfection within the layer, a very small degree of crystalline mismatch between layers and controlled and predictable surface properties. Additionally, stringent requirements have been placed on layer thickness, layer composition and electrical, optical and mechanical properties. At present the only viable means for producing such layers is molecular beam epitaxy (MBE). At the same time it has become necessary to fabricate in these layers structures with lateral dimensions that are extremely small, similar to such physical quantities as mean-free paths of electrons in solids, scattering distances of electrons in semiconductors, coherence lengths in superconductors, optical wavelengths, and typical electron-electron separations in 2-dimensional electron gases (2DEG). In order to make such structures it is necessary to fabricate artefacts with dimensions in the range Inm to l00nm. Conventional techniques of optical and electron lithography are not viable and new lithographic techniques have to be used. The most promising methods are based on high voltage electron lithography and focused ion beam lithography. In certain cases there is also a need for the etching of features, thermal treatment of layers and contact formation which again demand higher specifications in processing equipment than are needed for conventional semiconductor device and circuit processing. Finally, such practical considerations as levels of cleanliness and toxicity of materials must be taken into account. These requirements have led to the concept of fully integrated fabrication systems in which layer growth is combined with lithography, implantation, annealing, etching and overgrowth of surfaces before the substrate is removed from the vacuum environment. A typical specification for such a concept is based on what has been achieved in different aspects of microelectronics. For example, minimum superlattice layer thicknesses less than Inm [1], implanted layers ofB and As confined to 20 nm [2], free-standing wires of 50 nm diameter [3], nanolithography with line widths down to lOnm [4,5], GaAs FET gate lengths less than l00nm and Aharonov-Bohm loops within 80nm have been produced. The next step is to carry out the processing in situ so that the properties of both layers and structures do not deteriorate by exposure to air or other gases between fabrication steps. Reports indicate that such exposure can degrade the surface properties of semiconductors so that there is a decrease in the carrier density at the surface, and the surface resistivity becomes higher than in the bulk [6]. Deep level electron traps and reversal in semiconductor polarity can also take place at the surface. After overgrowth such defective layers are buried and carrier transport properties changed. Evidence from optical measurements of photoluminescence from layers which have not been exposed after growth indicate that the material has superior properties. In addition to the physical properties of materials and devices there are practical advantages with in-situ processing systems in that they do not require clean rooms with high specifications and operators are less likely to be exposed to risks. With in-situ systems which meet the specifications that have been proposed here it should be possible to explore such phenomena as transport in one-dimensional conductors, properties of 2-D electron gases with lateral confinement, short-channel ballistic effects, band-gap tuning, lateral size quantization effects and many other areas of low-dimensionality physics. D. 1. Ehrlich and V. T. Nguyen (eds.), Emerging Technologies/or In Situ Processing, 1-11. @ 1988 by Martinus NijhoffPublishers.
The list of books you might like
