Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
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Author:Byung-Eun Park (editor), Hiroshi Ishiwara (editor), Masanori Okuyama (editor), Shigeki Sakai (editor), Sung-Min Yoon (editor)
Language:English
Release year:2020
File size:22.601 MB
Number of page:421
Language:English
Release year:2020
File size:22.601 MB
Number of page:421
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Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.
