Workshop Handbook_Project Presenstations and Poster Abstracts_01.ai

140 Pages·2012·5.72 MB·English

2012
11th Annual CUDOS Workshop
Project Presentations & Poster Abstracts
31 January - 3 February
Shoal Bay Resort and Spa
Shoal Bay, NSW, Australia
Contents
1 Plenary Session
5 Hybrid Integration
9 Nanoplasmonics
14 Terabit per Second
22 Mid-Infrared Photonics
26 Quantum Integrated Photonics
35 Functional Metamaterials
41 Student Posters
88 Staff Posters
136 Selected Presenter Profiles
PLENARY SESSION, Tuesday, 31 January

SESSION SCHEDULE

Benjamin Eggleton Director’s Introduction
Director CUDOS

David A. B. Miller Joining Optics and Electronics – Why
Co-Director Stanford Photonics Research and How?
Centre
W. M. Keck Foundation Professor of Electrical
Engineering, Stanford

Ortwin Hess Extreme Control of Light in
Leverhulme Chair in Metamaterials, Metamaterials: From ‘Trapped
Department of Physics and Co-Director, Rainbows’ to Nanoplasmonics Meta-
Centre for Plasmonics & Metamaterials, Lasers.
Imperial College London

Shanhui Fan Non-reciprocity without magneto-optics
Associate Professor of Electrical Engineering,
Stanford

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PLENARY SESSION, Tuesday, 31 January
Joining Optics and Electronics – Why and How?

David A. B. Miller
Ginzton Lab, Stanford University, Nano Building, 348 Via Pueblo Mall, Stanford CA 94305-4088,
USA, [email protected]
http://www-ee.stanford.edu/~dabm/

Interconnect power and density have become dominant constraints in information processing at all levels from
the chip to the data center, and will continue to be for the foreseeable future and beyond. This talk will
summarize the requirements on optics and optoelectronics if they are to solve these problems, and discuss
specific topics from novel device approaches using germanium quantum wells and nanophotonic and
nanometallic structures to fundamental limits to the optical components we may have to make.

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PLENARY SESSION, Tuesday, 31 January
Extreme Control of Light in Metamaterials:
From ‘Trapped Rainbows’ to Nanoplasmonic Meta-Lasers.

Ortwin Hess
The Blackett Laboratory, Department of Physics
Imperial College London, London SW7 2AZ, United Kingdom
[email protected]

Metamaterials and ‘slow light’ have during the last ten years evolved to two of the most exciting realms of
photonics, enabling a wealth of exciting and useful applications such as sub-diffraction-limited lenses,
‘invisibility’ cloaks and ‘trapped rainbow’ storage and stopping of broadband light.

In the first part the talk will give an overview of recent advances in slow and stopped light in nano-plasmonic
metamaterials and waveguides, explaining how and why by the ‘trapped rainbow’ effect [1] these structures
can enable controlled stopping of light even in the presence of disorder and losses [2]. Exploiting extreme
nonlinear optics in nano-gap waveguides we will demonstrate the existence of nanometer-sized optical solitons
with femtosecond duration [3].

The talk will then establish the microscopic theory of amplification and lasing in nanoplasmonic metamaterials,
demonstrate the possibility of loss-compensation [4] and amplification [5] on the meta-molecular level and
elucidate the nonlinear spatio-temporal dynamics of nanoplasmonic metamaterial lasers [6].

REFERENCES
[1] K L Tsakmakidis, A D Boardman and O Hess, Nature 450, 397 (2007).
[2] E Kirby, J M Hamm, T W Pickering, K L Tsakmakidis and O Hess, Phys Rev B 84, 041103(R) (2011).
[3] A Pusch, J M Hamm, and O Hess, Phys Rev A 84, 023827 (2011).
[4] S Wuestner, A Pusch, K L Tsakmakidis. J M Hamm and O Hess, Phys Rev Lett 105, 127401 (2010).
[5] J M Hamm, S Wuestner, K L Tsakmakidis and O Hess, Phys Rev Lett 107, 167405 (2011).
[6] S Wuestner, J M Hamm, A Pusch, F Renn, K L Tsakmakidis and O Hess (submitted, 2011).

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PLENARY SESSION, Tuesday, 31 January
Non-reciprocity without magneto-optics

Shanhui Fan1,2,* , Zongfu Yu1, Kejie Fang¹, and Victor Liu¹
¹Ginzton Laboratory, Stanford University, Stanford, CA 94305
²Centre for Ultrahigh bandwidth Devices for Optical Systems, University of Sydney,
Australia
*Phone: [phone]
*Email: [email protected]

To achieve on-chip non-reciprocal devices, such as optical isolators, without using magneto-optical materials, one cannot
use any system containing only static dielectric materials described by symmetric dielectric tensors, including such system
that has gain or loss. Here, we show that dynamic modulation provides an effective mechanism to reproduce the effect of
magneto-optical isolators without the use of magneto-optics.

Optical isolators, which suppress back reflection, are of essential importance for constructing large-scale optical
networks. Traditional optical isolators use magneto-optical materials that are difficult to integrate on-chip. As a
result, there is substantial recent interest in developing non-magnetic isolators.

To understand the design of optical isolators, it is very important to reiterate some of the basic theoretical
constraints. Based on the reciprocity theorem [1], any system that is described by static and symmetric dialectric
tensors cannot function as an isolator, since such a system always possesses a symmetric scattering matrix. This
theorem precludes most nanophotonic structures, including some of those that were recently proposed in the
literature [2], for use as isolators [3].

Here we show theoretically and computationally that a properly designed dynamic modulation can break
reciprocity, and accomplish all functionalities of magneto-optical effects [4]. This prediction has been recently
demonstrated experimentally [5]. We further show that dynamic modulation can introduce an effective gauge
potential for photons, achieving an optical analogue of the Aharonov-Bohm effect [6].

References
[1] H. A. Haus, Waves and Fields in Optoelectronics, (Prentice-Hall, 1984).
[2] L. Feng et al., “Nonreciprocal light propagation in a silicon photnoic circuit”, Science 333, 729 (2011).
[3] S. Fan et al., “Comment on ‘Nonreciprocal light propagation in a silicon photnoic circuit’ by Feng et al”, Science (in press).
[4] Z. Yu and S. Fan, “Complete optical isolation created by indirect interband photonic transitions”, Nature Photonics 3, 91
(2011).
[5] H. Lira, Z. Yu, S. Fan and M. Lipson, “Electrically driven optical isolator” (submitted).
[6] K. Fang, Z. Yu and S. Fan, “Photonic Aharonov-Bohm effect based on dynamic modulation” (submitted).
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HYBRID INTEGRATION, Wednesday, 1 February

SESSION SCHEDULE

Science Leader Overarching Project Goals
Barry Luther Davies
Professor, Laser Physics Centre, ANU

Project Leader 2011 Project Milestone Achievements
Arnan Mitchell
Professor, School of Electrical and Computer
Engineering, RMIT

Steve Madden Hybrid integration to reduce total chip
Senior Fellow, Laser Physics Centre, ANU insertion losses

Thach Nguyen Silicon Photonic Platforms for Hybrid
Senior Research Fellow, School of Electrical Integration
and Computer Engineering, RMIT

Hendrik Steigerwald Direct write domain engineering of
Postdoctoral Fellow, School of Electrical and Ti:LiNb03 waveguides
Computer Engineering, RMIT

Arnan Mitchell 2012 Project Milestones

Discussion

Invited Speaker Heterogeneous III-V/silicon photonic
Gunther Roelkens integrated circuits for communications
Professor, Photonics Research Group, and sensing
University of Ghent

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HYBRID INTEGRATION, Wednesday, 1 February
Hybrid integration to reduce total chip insertion losses

Steve Madden
Centre for Ultrahigh bandwidth Devices for Optical Systems
Laser Physics Centre, ANU, Canberra
Phone: [phone]
Email: [email protected]

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HYBRID INTEGRATION, Wednesday, 1 February
Silicon Platforms for Hybrid Integration

Giang Thach Nguyen
Centre for Ultrahigh bandwidth Devices for Optical Systems
School of Electrical and Computer Engineering, RMIT University
Phone: [phone]
Email: [email protected]

A selection of research into thin, shallow-ridge silicon-on-insulator waveguides operating in TM polarization
with controlled lateral leakage into the TE mode is presented. Methods for utilising this strong, coherent lateral
leakage behaviour to realise new photonic devices including sensors and nonlinear optic elements are explored.
Opportunities for the use of the highly evanescent TM mode in hybrid integration with slots and also gain
media are also discussed.

Direct write domain engineering of To:LiNbO3 waveguides

Hendrik Steigerwald
Centre for Ultrahigh bandwidth Devices for Optical Systems
School of Electrical and Computer Engineering, RMIT University
Phone: [phone]
Email: [email protected]

Scanning focused, strongly absorbed UV light across the +z face of LiNbO3 inhibits poling, while on all other
faces domains are directly written by the UV light. The underlying mechanisms are based on lithium
redistribution and thermoelectric fields, respectively. These methods are used for domain engineering in Ti
indiffused LiNbO3 waveguides to develop a platform for integrated non-linear optics.

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HYBRID INTEGRATION, Wednesday, 1 February
Heterogeneous III-V/silicon photonic integrated circuits for communications and sensing

Gunther Roelkens
University of Ghent (INTEC)
Phone: [phone]
Email: [email protected]

Silicon-based photonic integrated circuits are gaining considerable importance for a variety of applications, from
telecommunications to sensors. The interest in this technology stems mostly from the expectation that the
maturity and low cost of CMOS-technology can be applied for advanced photonics products. Other driving
forces for silicon photonics include the design richness associated with high refractive index contrast as well as
the potential for integration of photonics with electronics. Building laser sources and other opto-electronic
devices on integrated silicon circuits is a long sought goal, on one hand in order to complete the functionality of
the integrated circuit but on the other hand also as a manufacturing approach for opto-electronic devices on
large wafers in CMOS-fabs. In terms of device performance the most successful approach to date is definitely the
hybrid (also called heterogeneous) III-V on silicon laser. In this device thin layers of III-V semiconductors are
bonded to silicon. The laser cavity gets its gain from the III-V layers but couples its output light into a silicon
waveguide. Often part of the cavity structure is implemented by means of patterning in silicon, thereby taking
advantage of the resolution and accuracy of lithography tools in CMOS fabs. In that sense these hybrid III-
V/silicon lasers take the best of two worlds.
In this presentation we will outline different types of integrated laser sources on a silicon platform, with a focus
on emission at 1.3um and 1.55um. Besides communications, we will also elaborate on our first steps in the field
of photonic integration for the short-wave and mid-infrared, for sensing applications.

Fig. 1: Example of the heterogeneous integration of InGaAsSb detectors on an SOI waveguide circuit for photodetection in
the 2-2.5um wavelength range

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