Wide Bandgap Semiconductor Based Micro/Nano Devices

140 Pages·2019·21.917 MB·English

by  Jung-Hun Seo (editor)

Wide Bandgap
Semiconductor
Based Micro/Nano
Devices
Edited by
Jung-Hun Seo
Printed Edition of the Special Issue Published in Micromachines
www.mdpi.com/journal/micromachines
Wide Bandgap Semiconductor Based
Micro/Nano Devices

Wide Bandgap Semiconductor Based
Micro/Nano Devices
SpecialIssueEditor
Jung-HunSeo
MDPI•Basel•Beijing•Wuhan•Barcelona•Belgrade
Special Issue Editor
Jung-Hun Seo
University at Buffalo, the State University of New York
USA
Editorial Office
MDPI
St. Alban-Anlage 66
4052 Basel, Switzerland
This is a reprint of articles from the Special Issue published online in the open access journal
Micromachines (ISSN 2072-666X) from 2018 to 2019 (available at: https://www.mdpi.com/journal/
micromachines/special issues/Semiconductor Materials Micro nano Devices)
For citation purposes, cite each article independently as indicated on the article page online and as
indicated below:
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Contents
AbouttheSpecialIssueEditor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii
Jung-HunSeo
EditorialfortheSpecialIssueonWideBandgapSemiconductorBasedMicro/NanoDevices
Reprintedfrom:Micromachines2019,10,213,doi:10.3390/mi10030213 . . . . . . . . . . . . . . . . 1
Guanguang Zhang, Kuankuan Lu, Xiaochen Zhang, Weijian Yuan, Muyang Shi,
Honglong Ning, Ruiqiang Tao, Xianzhe Liu, Rihui Yao and Junbiao Peng
Effects of Annealing Temperature on Optical Band Gap of Sol-gel Tungsten Trioxide Films
Reprintedfrom:Micromachines2018,9,377,doi:10.3390/mi9080377 . . . . . . . . . . . . . . . . . 4
Junfeng Li, Shuman Mao, Yuehang Xu, Xiaodong Zhao, Weibo Wang, Fangjing Guo,
Qingfeng Zhang, Yunqiu Wu, Bing Zhang, Tangsheng Chen, Bo Yan, Ruimin Xu and
Yanrong Li
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors
(HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit
(MMIC) Design in W band
Reprintedfrom:Micromachines2018,9,396,doi:10.3390/mi9080396 . . . . . . . . . . . . . . . . . 13
WojciechWojtasiak,MarcinGo´ralczyk,DanielGryglewski,MarcinZajac,RobertKucharski,
Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamin´ska, Andrzej Taube,
MarekWzorek
AlGaN/GaNHighElectronMobilityTransistorsonSemi-InsulatingAmmono-GaNSubstrates
withRegrownOhmicContacts
Reprintedfrom:Micromachines2018,9,546,doi:10.3390/mi9110546 . . . . . . . . . . . . . . . . . 25
ShumanMaoandYuehangXu
InvestigationontheI–VKinkEffectinLargeSignalModelingofAlGaN/GaNHEMTs
Reprintedfrom:Micromachines2018,9,571,doi:10.3390/mi9110571 . . . . . . . . . . . . . . . . . 39
HujunJia,MeiHuandShunweiZhu
AnImprovedUU-MESFETwithHighPowerAddedEfficiency
Reprintedfrom:Micromachines2018,9,573,doi:10.3390/mi9110573 . . . . . . . . . . . . . . . . . 50
MyeongsunKim,JongminHa,IkhyeonKwon,Jae-HeeHan,SeongjaeChoandIlHwanCho
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially
InsertedWide-BandgapDoubleBarriersforHigh-TemperatureApplications
Reprintedfrom:Micromachines2018,9,581,doi:10.3390/mi9110581 . . . . . . . . . . . . . . . . . 55
YanZhouandChengyuanDong
InfluenceofPassivationLayersonPositiveGateBias-StressStabilityofAmorphousInGaZnO
Thin-FilmTransistors
Reprintedfrom:Micromachines2018,9,603,doi:10.3390/mi9110603 . . . . . . . . . . . . . . . . . 64
YifeiHuang,YingWang,XiaofeiKuang,WenjuWang,JianxiangTangandYouleiSun
Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and
SurfaceCharges
Reprintedfrom:Micromachines2018,9,610,doi:10.3390/mi9120610 . . . . . . . . . . . . . . . . . 72
v
SeilKim,Min-PyoLee,Sung-JuneHongandDong-WookKim
Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of
TransistorCells
Reprintedfrom:Micromachines2018,9,619,doi:10.3390/mi9120619 . . . . . . . . . . . . . . . . . 81
Wen-YangHsu,Yuan-ChiLian,Pei-YuWu,Wei-MinYong,Jinn-KongSheu,Kun-LinLinand
YewChungSermonWu
SuppressingtheInitialGrowthofSidewallGaNbyModifyingMicron-SizedPatternedSapphire
SubstratewithH3PO4-BasedEtchant
Reprintedfrom:Micromachines2018,9,622,doi:10.3390/mi9120622 . . . . . . . . . . . . . . . . . 89
ShengjunZhou,HaohaoXu,MenglingLiu,XingtongLiu,JieZhao,NingLiandShengLiu
Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of
GaN-BasedFlip-ChipLight-EmittingDiodes
Reprintedfrom:Micromachines2018,9,650,doi:10.3390/mi9120650 . . . . . . . . . . . . . . . . . 98
HuolinHuang,FeiyuLi,ZhonghaoSunandYaqingCao
Model Development for Threshold Voltage Stability Dependent on High Temperature
OperationsinWide-BandgapGaN-BasedHEMTPowerDevices
Reprintedfrom:Micromachines2018,9,658,doi:10.3390/mi9120658 . . . . . . . . . . . . . . . . . 107
YouleiSun,YingWang,JianxiangTang,WenjuWang,YifeiHuangandXiaofeiKuang
ABreakdownEnhancedAlGaN/GaNSchottkyBarrierDiodewiththeT-AnodePositionDeep
intotheBottomBufferLayer
Reprintedfrom:Micromachines2019,10,91,doi:10.3390/mi10020091 . . . . . . . . . . . . . . . . 119
vi
About the Special Issue Editor
Jung-HunSeoreceivedhisBSdegreeinelectronicsandelectricalengineeringfromKoreaUniversity,
Seoul,RepublicofKorea,in2006.HereceivedhisMSandPhDdegreesinElectricalandComputer
EngineeringfromUniversityofWisconsin-Madisonin2011and2015,respectively.Since2016,hehas
been an assistant professor at the Department of Materials Design and Innovation, University at
Buffalo,thestateuniversityofNewYork.Heistheauthororcoauthorofmorethan80peer-reviewed
papers, book chapters, and patents. His research interests mainly focus on the synthesis of
lowdimensionalwidebandgapsemiconductorstowardhighperformanceflexibleelectronicsand
optoelectronics.Also, heisworkingonvarioushighfrequencyandhighpowerdevicesbasedon
widebandgapsemiconductors.
vii

micromachines
Editorial
Editorial for the Special Issue on Wide Bandgap
Semiconductor Based Micro/Nano Devices
Jung-HunSeo
DepartmentofMaterialsDesignandInnovation,UniversityatBuffalo,TheStateUniversityofNewYork,
Buffalo,NY14260,USA;[email protected]
(cid:2)(cid:3)(cid:4)(cid:2)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)
Received:20March2019;Accepted:25March2019;Published:26March2019 (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)
WhileconventionalgroupIVorIII-Vbaseddevicetechnologieshavereachedtheirtechnical
limitations(e.g.,limiteddetectionwavelengthrangeorlowpowerhandlingcapability),widebandgap
(WBG)semiconductorswhichhaveband-gapsgreaterthan3eVhavegainedsignificantattention
inrecentyearsasakeysemiconductormaterialinhigh-performanceoptoelectronicandelectronic
devices[1,2].TheseWBGsemiconductorshavevariousdefinitiveadvantagesforoptoelectronicand
electronicapplicationsduetotheirlargebandgapenergy.WBGenergyissuitabletoabsorboremit
ultraviolet(UV)lightinoptoelectronicdevices[3].Italsoprovidesahigherelectricbreakdownfield,
whichallowselectronicdevicestopossesshigherbreakdownvoltages[4].
InthisSpecialIssue,13paperspublished,includingvariousAlGaN/GaN,SiC,andWO3based
devices.MorethanhalfofpapersreportedrecentprogressonAlGaN/GaNhighelectronmobility
transistors (HEMTs) and light emitting diodes (LEDs). Wojtasiak et al., and Sun et al, reported
astructuralmodificationofAlGaN/GaNHEMTstoimproveturn-onvoltage, contactresistance,
andon-resistance[5]. Huangetal. investigatedhigh-temperaturecharacteristicsofAlGaN/GaN
HEMTs and successfully established the thermal model [6]. Mao et al. and Li et al. simulated
AlGaN/GaN HEMTs with a large signal model to investigate the kink-effect [7,8]. All of these
effortstowardAlGaN/GaNHEMTsenablereaderstounderstandcurrentissuesinAlGaN/GaN
HEMTsandoffervariousexperimentalandtheoreticalsolutions.Besidetransistorworks,flip-chip
GaNLEDsthatwerecombinedwithTiO2/SiO2distributedBraggreflectors(DBRs)wasreported
byZhouetal[9].AnimprovedGaNHEMTsandtheirmicrowaveperformancebyemployingthe
asymmetricpower-combiningwasreportedbyKimetal[10]. AlongwithanotherGaNLEDbuilt
onamodifiedmicron-sizepatternedsapphiresubstratebyHsuetal.[11]. TheseGaNLEDworks
arealsoguidedbroadreadersinthefieldofoptoelectronicsandbiomedicalareastowardfuture
high-performanceoptogeneticsandphotonicsapplications. Also,Sunetal. reportedanenhanced
AlGaN/GaNSchottkyBarrierbyengineeringthestructureofthediode[12].
InadditiontoAlxGa1-xNsystem,twoSiCsimulationeffortshavebeenmadebyHuangetal.
andJiaetal. Huang. Theyfocusedontheimprovementofhigheraddedefficiency(PAE)factor
in4H-SiCmetalsemiconductorfieldeffecttransistorsandbreakdownvoltageof4H-SiCdiodes,
respectively[13,14].
BesidespopularAlxGa1-xNandSiC-basedapplications,threepapersreportInGaZnOthin-film
transistors(TFTs),Si/GaPone-transistordynamicrandom-accessmemory(1TDRAM),andWO3
thin-film.Zhouetal.investigatedastresstoleranceofInGaZnOTFTswithaSiO2orAl2O3passivation
layerwhichshowsastablepositivebiasduringtheoperation[15]. Kimetal. simulatedanovel
1TDRAMdesignbyinsertingaGaPpillarwhichshowedastablehigh-temperatureoperation[16].
Finally,Zhangetal. reportedthechangesoftheopticalbandgapinTungstentrioxidebythermal
annealingwhichcanbeusedforvariouselectrochromicdevices[17].
Micromachines2019,10,213;doi:10.3390/mi10030213 1 www.mdpi.com/journal/micromachines