Wide Band Gap Electronic Materials

522 Pages·1995·42.49 MB·English

by  Galina Popovici, M. A. Prelas (auth.), Mark A. Prelas, Peter Gielisse, Boris V. Spitsyn, Tina Stacy (eds.)

Wide Band Gap Electronic Materials
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3. High Technology - Vol. 1
Wide Band Gap Electronic
Materials
edited by
Mark A. Prelas
University of Missouri-Columbia,
Columbia, Missouri, U.S.A.
Peter Gielisse
Florida A&M University/Florida State University,
Tallahassee, Florida, U.SA
Galina Popovici
Rockford Diamond Technology, Inc.,
Columbia, Missouri, U.S.A.
Soris V. Spitsyn
Russian Academy of Sciences,
Moscow, Russia
and
Tina Stacy
University of Missouri-Columbia,
Columbia, Missouri, U.S.A.
Springer-Science+Business Media, B.V.
Proceedings of the NATO Advanced Research Workshop on
Wide Band Gap Electronic Materials - Diamond,
Aluminum Nitride and Boron Nitride
Minsk, Belarus
May 4-6, 1994
A C.I.P. Catalogue record for this book is available from the Library of Congress.
ISBN 978-94-010-4078-5 ISBN 978-94-011-0173-8 (eBook)
DOI 10.1007/978-94-011-0173-8
Printed on acid-free paper
AII Rights Reserved
© 1995 Springer Science+Business Media Dordrecht
Originally published by Kluwer Academic Publishers in 1995
Softcover reprint of the hardcover 1s t edition 1995
No part of the material protected by this copyright notice may be reproduced or
utilized in any form or by any means, electronic or mechanical, including photo-
copying, recording or by any information storage and retrieval system, without written
permission from the copyright owner.
This book is dedicated to Dr. Steven Lin. His efforts
in assembling this book were no less than Herculean.
Additionally we wish to thank Dr. Kim Bigelow of
Norton Diamond Film Division, Dr. Paul Blackborow
of ASTex Inc., and John Tompkins of Rockford Tech-
nology Corp. for supporting this Workshop financially.
CONTENTS
Preface ••••••••..••••.••.•••.•.•.•••.•.•••••.•..•••.•••.•••••.•••••••.•••••••.••.•.••..•••••••.••••.••••••.•.••.••••••..••.•••• vii
DIAMOND
Growth and Doping
Problems of n-type Diamond Doping. Forced Methods ofDoping •..••.•..........•....• 1
Galina Popovici, RDT; and M. A. Prelas, UMC.
Diffusion of Boron, Hydrogen, Oxygen and Lithium in Single Crystalline
and Polycrystailine Diamond. A Novel Method for the Determination of
the State of an Impurity: Forced Diffusion of Boron in IA Type Natural
Diamond 15
Galina Popovici, RDT; T. Sung, M. A. Prelas, UMC;
R. G. Wilson, HRL; and S. Khasawinah, UMC.
Chemical Aspects ofDiamond Doping •..••.•••••••..••••.•••..••.•••••••..••••.•.•••.•..•..••.•.•........ 31
B.V. Spitsyn, RAS.
Diamond Growth by Hot Carbon Filament Chemical Vapor Deposition ....••..•.. 47
C. C. Chao, E. J. Charlson, E. M. Charlson, J. Meese,
M. A. Prelas and T. Stacy, UMC.
Diamond Particles on Silicon Tips: Preparation, Structure, and
Field-Emission Properties 53
E.I. Givargizov, A.N. Stepanova, L.L. Aksenova,
E.V. Rakova, P.S. Plekhanov, V.V. Zhirnov,
and A.N. Kiselev, RAS.
To the Question of the Diamond Nuclei's Formation from the Gas Phase 63
A.P. Rudenko, and I.I. Kulakova, MSU.
Characterization and Properties
ElectricaUy and Optically Active Impurities and Defects in Diamond 69
A.A. Gippius, RAS.
Prediction of Diamond Film Thermal Conductivity •..••.•..••••.••.•••••.••••.••.•..•.••.•..•. 81
N.V. Novikov, T.D. Ositinskaya, A.P. Podoba,
and S.V. Shmegerea, UAS.
viii
Spectral Hole-Burning Study of the Defects Created by Neutron
Irradiation in a Natural Diamond 89
I. Sildos, G. Zavt, and A. Osvet, EAS.
Calculations of Phosphorous Electronic Levels in Diamond 97
V.V. Tokiy and D.L. Savina, DICE.
Hydrogen Chemistry on Diamond Surface 105
J. E. Butler, B. D. Thomas, M. McGonial, J.N. Russell, Jr.,
and P.E. Pehrsson, NRL.
Surface and Bulk Conductivity of Hydrogen Treated PolycrystaUine
Diamond 115
G.A. Sokolina, L.L. Bouilov, A.A. Botev, A.V. Markin, RAS;
and M.A. Timofeev, MSU.
Positron Annihilation in Diamond Films 123
1.1. Bardyshev, L.L. Bouilov, and B.V. Spitsyn, RAS.
ESR Study of Paramagnetic Defects in Free Standing Diamond Films 129
T. A. Karpukhina, RAS; M. A. Prelas, G. Popovici,
S. Khasawinah, UMC; and B. V. Spitsyn, RAS.
Applications
Efficient Reduction of Nitride and Nitrate to Ammonia Using B-doped
Diamond Electrodes 137
C. Reuben, E. Galun, R.Tenne, WI; R. Kalish, Tech;
Y. Muraki, K. Hashimoto, A. Fujishima, UT;
J.M. Butler, NRL; and C. Levy-Clement, CNRS.
Electronic and Sensing Properties ofDiamond 143
J.L. Davidson, VU.
Diamond MIS Capacitors With Silicon Dioxide Dielectric 161
M.J. Marchywka, D. Moses, and P.E. Pehrsson, NRL.
Diamond Photovoltaics: Characterization of CVD Diamond Film-Based
Heterostructure for Light to Electricity Conversion 171
PJ. Perov, V.1. Polyakov, A.V. Khomich, N.M. Rossukanyi,
A.I. Rukovishnikov, V.P. Vamin, and I.G. Teremetskaya, RAS.
Laser Modes in Diamond 187
L.-T. S. Lin, M.A. Prelas, UMC; and G. Popovici, RDT.
Advanced Applications ofDiamond Electronics 207
C.B. Wallace, BDM.
Laser-assisted Chemical Etching of Diamond Films in Oxygen 219
V. G. Ralchenko, K. G. Horotushenko, A. A. Smolin
and E. D. Obraztsova, RAS.
Ion Milling of PolycrystaUine Diamond Films 225
A. E. Alexenko, RAS; A. F. Belyanin, CRTI; L. L. Bouilov, RAS;
A. P. Semenov, SRAS; and B. V. Spitsyn, RAS.
ix
AMORPHOUS AND DIAMOND-LIKE CARBON FILMS
Growth and Doping
Doping ofDiamond-Like Carbon Films •••••••••.•..- 235
S. Mitura, TUL; J. Szmidt, and A Sokolowska, WUT.
Unhydrogenated DLC Films Obtained by Magnetron Sputtering 243
C. Morosanu, IPTM; N. Tomozeiu, UB; C. Cordos,
and T. Stoica, IPTM.
Simulation ofDitJusion in an Amorphous Structure 249
A. V. Nazarov, IBMI.
Characterization and Properties
Optical and Electrical Properities of Quantum-dimentional Multilayer
Structures Based on Carbon Films 257
V.V. Sleptsov, V.M. Elinson, AM. Baranov,
and S.A Tereshin, NPO.
Thermal Stability and Structural Reactions at the Tantalumla-C
Interface Under Vacuum Annealing Conditions 265
AP. Novikov, E.A. Shilova, L.D. Buiko,
and VA Zaikov, RCEMT.
Extended and Localized Electronic States in Tetrahedral Carbon Films .......... 271
V.E. Maschenko, ISA;V.M. Puzikov, UAS;
and A.V. Semenov, SRAS.
Optical Properties of Sputtering and Glow Discharge a-C:H Films 285
T. Stoica, A. Dragomir, IPTM; M. Gartner, IPCR; C. Morosanu,
and G. Pavelescu, IPTM.
Applications
Application ofAmorphous Hydrogenated Carbon Coating to
Semiconductor Radiation Detectors 291
I.M. Kotina, T.A Antonova, G.V. Patsekina, V.D. Saveliev,
L.M. Tuhkonen, PNPI; 0.1. Konkov, and E.I. Terukov, IP17.
OTHER WIDE BANDGAP SEMICONDUCTORS
Growth and Doping
Device for Growing and Doping in the Growth Process of
Thin AIN Films 297
AF. Belyanin, CRTI; A.P. Semenov, SRAS;
and B.V. Spitsyn, RAS.
x
Peculiarities of Chemical Vapor Heteroepitaxy of Wide Band Gap
111-V Nitrides 305
E.B. Sokolov, G.A. Naida, and N.V. Barovskii, MSIEE.
The Peculiarities of Cubic Boron Nitride Formation Mechanism
Using Hexa-Ammonicate Boron Hydride ofMagnesium 313
H.I. Polushin, MSSAV; and KP. Burdina, MSV.
Investigation of Cubic Boron Nitride Crystallization Processes in
the BN-Li3N-(H~N) System 321
V.B. Shipilo, L.M. Gameza, and A.I. Lukomskii, ASB.
Epitaxial Growth ofAIN by Plasma Source Molecular Beam Epitaxy 329
G.W. Auner, T.D. Lenane, F. Ahmad, R Naik, P.K Kuo,
and Z. Wu, WSV.
Characterization and Properties
Electronic Structure and Related Properties ofTetrahedrally Bonded
Wide-Band-Gap Materials Containing Early Elements of
the Periodic Table 335
W.RL. Lambrecht, C.H. Lee, K Kim, A.G. Petukhov,
E.A. Albanesi, and B. Segall, CWRV.
Ion·Implantation into Wide Bandgap Semiconductors 373
V.S. Vavilov, PNLPI.
Thermodynamic Properties ofBoron Nitride 377
V.L. Solozhenko, VAS; and K.S. Gavrichev, RAS.
Electrical Conductivity ofCeramic Based on Different Boron Nitride
Modifications 393
A.V. Bochko, VAS; G.A. Sokolina, and S.V. Bantsekow, RAS.
Cathodoluminescent Investigation of External Factors Influence
on Defective Cubic Boron Nitride Structure 397
V.B. Shipilo, E.M. Shishonok, A.I. Lukomskii,
and L.M. Gameza, ASB.
Macro and Micro Structural Factors in Thin Film Growth of
III-V Compounds 401
PJ. Gielisse and H. Niculescu, FAMV.
The Features of the Sintering Process Under High Pressure of
Aluminum Nitride Ceramic with High Thermal Conductivity 421
V.B. Shipilo, T.V. Rapinchuk, and N.A. Shishonok, ASB.
Reactive Ion Etching ofSilicon Carbide with Fluorine Containing
Plasmas 427
V.E. Sizov, and KV. Vassilevski, CREE.
1.54-Jlm Photoluminescence from Er-Implanted AIN & GaN 431
RG. Wilson, R.N. Schwartz, HRL; c.R. Abernathy,
S.1. Pearton, VF; N. Newman, M. Rubin, T. Fu, LBL;
and J.M. Zavada, ARO.
xi
AES-SIMS Analitical System for Compositional Measurements of
Wide Band Gap Semiconductors •.••••.•••..••••.••.....•..•••••....•..••.••.•••••...•••..•.•...•..••.•..••.. 437
A.I. Babanin, IPTI and CREE; and A.A. Lavrentev, SEU.
Positron Annihilation in Sintered Boron Nitride 447
1.1. Bardyshev, and A.D. Buravov, RAS.
Applications
Wide Band Gap Electronic Devices 453
V.E. Chelnokov, IPTl; K.V. Vassilevski, CREE;
and V.A. Dmitriev, CR!.
Wide Band-gap Photovoltaics .....•.••.•...•.••.....••.•........••.•.....•............••••..•.••..•..••..•..•.. 463
M. A. Prelas, UMC; G. Popovici, RDT; S. Khasawinah,
and T. Sung, UMC.
Considerations in Further Development ofAluminum Nitrides as
a Material for Device Applications 475
T. Stacy, B. Y. Liaw, A. H. Khan, and G. Zhao, UMC.
Theoretical Aspects ofAluminum Nitride and Diamond in View of
Laser and Photovoltaic Action 487
H. Hora, UR; R. Hopfl, HT; and M. A. Prelas, UMC.
Oral Presentations 511
Poster Presentations 513
List of Participants 519
Affiliations Key 525
Author Index 527
Key Word Index 529