Table Of Content

VACUUM SURFACE ENGINEERING, SURFACE INSTRUMENTATION & VACUUM TECHNOLOGY PERGAMON Vacuum 59 (2000) VII- XII www.elsevier.nl/locate/vacuum Contents Volume 59 Number 1 AUTHORS ARTICLES Preface Reviews A Y Wong From basic to applied plasma science T Bell, Y Sun and A Suhadi Environmental and technical aspects of plasma nitrocarburising Plasma Sources Y Uesugi, T Imai, H Sawada, N Hattori Generation of high heat flux plasmas by high power rf heating in and S Takamura the divertor plasma simulator NAGDIS-II B Glocker, G Nentwig and 1-40 kW steam respectively multi gas thermal plasma torch E Messerschmid system K Osaki, O Fukumasa and A Kobayashi High thermal efficiency-type laminar plasma jet generator for plasma processing M Y Ye, O Matsuda, N Ohno, Y Uesugi, Application of strongly ionized AC tokamak plasma for synthesis M Takagi and S Takamura of TiN thin films K Toyoda, K Komurasaki and Y Arakawa Continuous-wave laser thruster experiment H Sou, Y Takao, T Noutsuka, Y Mori, A study of plasma propulsion system with RF heating K Uemura and H Nakashima JL Zhang, X L Deng, P S Wang and Emission spectrum diagnostics of argon DC discharge TC Ma T lwao, H Miyazaki, T Hayashi, T Hirano Radiation power emitted from Ar torch short plasma as a func- and T Inaba tion of in-put power in several kW T Matsumura, Y Yokomizu and H Ohno Influence of air flow velocity distribution on current interruption in flat-type arc quenching chamber H Horisawa and | Kimura Very low-power arcjet testing R Ramasamy, V Selvarajan, K Perumal An attempt to develop relations for the arc voltage in relation to and G Shanmugavelayutham the arc current and gas flow rate J Liu, D Wang and T C Ma The charged dust in processing plasma sheath Y Gong, J Liu, X Wang and W Li Helical instability of arcs with electrical conductivity of parabolic distribution under electrostatic approximation Vill Contents / Vacuum 59 (2000) VII-XIII Plasma Processing Y Hirata, M Fukushima, T Sano, K Ozaki Micro-arc discharge phenomena and T Ohjji T Matsutani, M Kiuchi, T Takeuchi, Deposition of 3C-SiC films using ECR plasma of methylsilane T Matsumoto, K Mimoto and S Goto R Miyano, K Kimura, K izumi, Preparation of metal nitride and oxide thin films using shielded H Takikawa and T Sakakibara reactive vacuum arc deposition D F Richards, M O Bloomfield, Modeling plasma processes in microelectronics S Soukane and T S Cale H C Dickey and T T Meek Active electronic devices fabricated by DC plasma arc spray process S Sharafat, A Kobayashi, V Ogden Development of composite thermal barrier coatings with anisot- and N M Ghoniem ropic microstructure A Kobayashi and T Kitamura Effect of heat treatment on high-hardness zirconia coatings formed by gas tunnel type plasma spraying T Shibata, H Tahara, T Yasui, Y Kagaya Development of electromagnetic acceleration plasma generator and T Yoshikawa for titanium nitride coatings Environmental Applications C P Lungu, A M Lungu, Y Sakai, C.F, polymer film deposition in DC and RF fluorinert vapor H Sugawara, M Tabata, M Akazawa plasmas and M Miyamoto R Gasparik, N Mine, S Ihara, S Satoh NO, treatment by positive streamer corona and C Yamabe T Fujii and M Rea Treatment of NO, in exhaust gas by corona plasma over water surface T Miichi, S Ihara, S Satoh and C Yamabe Spectroscopic measurements of discharges inside bubbles in water K Ramachandran and N Kikukawa 244 Plasma in-flight treatment of electroplating sludge Advance Materials and Charcterizations M Naka, T Shibayanagi, M Maeda, 252 Formation and physical properties of Al base alloys by sputter- S Zhao and H Mori ing K Niizuma and Y Utsushikawa Synthesis of Fe—N gradient foil by nitrogen plasma Y Sakuma, L Haiping, H UVeyama High-density microwave plasma for high-rate and low-temper- and H Shirai ature deposition of silicon thin film S Kubo, S Kurai and T Taguchi Homoepitaxial growth of GaN thin layer by molecular beam epitaxy with an RF nitrogen plasma K Kurokawa, G Ochiai, H Takahashi, Effects of sputter-deposited materials (W, Ti and SiC) on inter- S Ohta and H Takahashi facial reaction between MoSi, and Nb V Gupta, R Hernandez, J Wu and Interfacial adhesion and its degradation in selected metal/oxide P Charconnet and dielectric/oxide interfaces in multi-layer devices Contents / Vacuum 59 (2000) VII-XIIT T Kuroda 301 Helium bubble formation in YAG laser weldment of helium- implanted stainless steel High Energy Processing and Others Y Hashimoto and M Yatsuzuka Study on smoothing of titanium surface by intense pulsed ion beam irradiation H Uchida and M Yamashita Pinhole defect evaluation of TiN films prepared by dry coating process M Yatsuzuka, S Miki, R Morita, Enhanced corrosion resistance of TiN prepared by plasma- K Azuma, E Fujiwara and H Uchida based ion implantation X Han and M Futamata Application of atomic absorption spectrometry to laser plume analysis M Kamatani, S Ihara, S Satoh Laser oscillation using an inductive energy storage pulsed- and C Yamabe power generator with plasma opening switch M Fukao, M Ishida, Y Ohtsuka A simple electron gun by obstructed discharge and its dis- and H Matsuo charge-sustaining mechanism N Abe, J Morimoto, M Tomie Formation of WC-Co layers by an electron beam cladding and C Doi method and evaluation of the layer properties Volume 59 Numbers 2-3 AUTHORS ARTICLES T Hata, K Sasaki, Y Ichikawa Yttria-stabilized zirconia (YSZ) heteroepitaxially grown on Si and K Sasaki substrates by reactive sputtering S Horita, H Nakajima and T Kuniya Improvement of the electrical properties of heteroepitaxial yttria-stabilized zirconia (YSZ) films on Si prepared by reactive sputtering K Sasaki, H Nagai and T Hata Epitaxial growth properties of Si and SiGe films prepared by ion beam sputtering process Y Yoshino, K Inoue, M Takeuchi, Effect of substrate surface morphology and interface micro- T Makino, Y Katayama and T Hata structure in ZnO thin films formed on various substrates H Qiu and M Hashimoto Initial growth characteristic of Ni-Cu films deposited on MgO(0 0 1) by DC-biased plasma sputtering Y Ichikawa, H Adachi, R Ai and K Wasa Effects of partial oxygen pressure on the crystal growth of PbTiO, thin films on miscut (0 0 1)SrTiO, U Heister, J Krempel-Hesse, TwinMag II: Improving an advanced sputtering tool J Szczyrbowski, G Teschner, J Bruch and G Brauer T Seino, T Sato and M Kamei 650 mm x 830 mm area sputtering deposition using a separated magnet system Contents | Vacuum 59 (2000) VII-XIII H Sato, M Sato, M Tagami, K Funato, 437 Development of biased directional sputtering (BDS) for barrier M Sasaki, S Taguchi, S Mizuno metal formation and M Kobayashi H Seki, S Kitazawa, Y Ueno, N Wada, Development of a locally electron-heated plasma source S Takemori, T Sato, S Uchikawa and E Setoyama K Hidaka, S Hashiguchi, S Nagayama Properties of high-density (Pb, La) (Zr, Ti) O; ceramics for sput- and P Kim tering targets Y Yoshida and H Ogura Holey-plate plasma source for plasma processing R Ai, K Wasa and Y Ichikawa Magnetron sputtering cathode with confined magnetic flux S Miyake, Y Setsuhara, Y Sakawa Internal-antenna-driven inductive RF discharges for develop- and T Shoji ment of large-area high-density plasma sources with sup- pressed electrostatic coupling T Oyama and T Yamada Light-absorbing wide-band AR coatings on PET films by sputtering Some issues on hydrogen and hydrogenation of plasma enhanced chemical vapor deposited films in a-Si:H thin-film transistors N Kikuchi, E Kusano, H Nanto, A Kinbara Phonon scattering in electron transport phenomena of ITO films and H Hosono J Striimpfel and C May Low ohm large area ITO coating by reactive magnetron sputtering in DC and MF mode M Nakamura, T Aoki and Y Hatanaka Hydrophilic characteristics of rf-sputtered amorphous TiO, film S Ikezawa, F Mutsuga, T Kubota, Basic characteristics of TiO, film for environmental purification R Suzuki, K Baba, S Koh, T Yoshioka, deposited by electron-beam-excited plasma A Nishiwaki, K Kida, Y Ninomiya and K Wakita D N Lambeth Hard disk media: future problems and possible solutions S Baba, | Mori and T Nakano Precise determination of the refractive index of sputtered MgO thin films in the visible light range Y Yoshino, T Makino, Y Katayama and Optimization of zinc oxide thin film for surface acoustic wave T Hata filters by radio frequency sputtering K Tominaga, T Murayama, | Mori, Conductive transparent films deposited by simultaneous sput- T Okamoto, K Hiruta, T Moriga tering of zinc-oxide and indium-oxide targets and | Nakabayashi S Tamura, K Murai, N Kamijo, Focusing efficiency of a multilayer Fresnel zone plate for hard K Yoshida, H Kihara and Y Suzuki X-ray fabricated by DC sputtering deposition J-D Kim, K Sasaki and T Hata Preparation and properties of Pb(Zr, Ti)O; thin films deposited on Ir electrodes using a sputtering apparatus Contents / Vacuum 59 (2000) VII-XIII N Tajima, H Saze, H Sugimura 567 Tribological properties of a-C:N and a-C films prepared by and O Takai shielded arc ion plating K Tominaga and | Mori Relation between the flux of energetic oxygen ions and the sputtered metal atoms in oxide film deposition by reactive sputtering T Nakano, N Ohnuki and S Baba Pressure dependence of optical emission from DC magnetron sputtering plasma observed with spatial resolution K Fukushima, E Kusano, N Kikuchi, lon fraction and energy distribution of Ti flux incident to substra- T Saito, S Saiki, H Nanto and A Kinbara te surface in RF-plasma enhanced magnetron sputtering H Biederman RF sputtering of polymers and its potential application K Okimura, T Nakamura and A Shibata Mass spectrometry and absorption spectroscopy for oxidation of titanium target in rf magnetron sputtering H Takatsuji and T Arai Pinholes in Al thin films: their effects on TFT characteristics and a taguchi method analysis of their origins Y Shigesato, R Koshi-ishi, T Kawashima Early stages of ITO deposition on glass or polymer substrates and J Ohsako Y Muraoka, K Ueda, H Tabata Preparation and thickness dependence of magnetic properties and T Kawai of (11 1)-oriented Mg,.FeTi,;O, spinel films on sapphire by pulsed laser deposition technique H Xu, H Zhu, K Hashimoto, T Kiyomoto, Preparation of BST ferroelectric thin film by pulsed laser abla- T Mukaigawa, R Kubo, Y Yoshino, tion for dielectric bolometers M Noda, Y Suzuki and M Okuyama A Masuda, J Sakai and H Matsumura Novel thin-film fabrication method combining pulsed laser abla- tion and catalytic chemical vapor deposition: application to preparation of Er-doped hydrogenated amorphous Si films F O Adurodija, H Izumi, T Ishihara, Low-temperature growth of low-resistivity indium-tin-oxide thin H Yoshioka, H Matsui and M Motoyama films by pulsed laser deposition M Ishihara, K Yamamoto, F Kokai Aluminum nitride thin films prepared by radical-assisted pulsed and Y Koga laser deposition S Fujimaki, H Kashiwase and Y Kokaku New DLC coating method using magnetron plasma in an unbal- anced magnetic field H Anma, J Toki, T Ikeda and Y Hatanaka Uniform deposition of SiC thin films on plastics surfaces K Sasaki, T Takada and Y Yoshida Silicon selective growth on partially oxidized substrate by ECR plasma CVD technique M Niraula, D Mochizuki, T Aoki, Low-temperature growth and n-type doping of CdTe by the Y Nakanishi and Y Hatanaka remote-plasma-assisted metalorganic chemical vapor deposition method S Okuji, N Sakudo, K Hayashi, Effect of microwave ferrite on the density distribution of micro- K Fujimura, Y Nishiyama, K Toyoda, wave-superposed inductively coupled plasma S Yashima and T Ishida K J Yoo, S H Chi, M H Yim, S B Han, Dependence of metal sheet resistance on metal etch/post-etch S J Choi and J H Ha treatment and subsequent process conditions Contents / Vacuum 59 (2000) VII-XIII D Noda, T Aoki, Y Nakanishi 701 Epitaxial growth of CdSeTe films by remote plasma enhanced and Y Hatanaka metal organic chemical vapor deposition M Shindo, Y Ueda, S Kawakami, Measurements of negative ion density in fluorocarbon ECR N Ishii and Y Kawai plasma M-A Nicolet Reactively sputtered ternary films of the type TM-Si-N and their properties (TM= early transition metal) M Kawamura, Y Abe and K Sasaki Formation process of Ni-N films by reactive sputtering at differ- ent substrate temperatures M Shimada, T Amazawa, T Ono, Ultrathin Al,O, and AIN films deposited by reactive sputter using S Matsuo and H Oikawa advanced electron cyclotron resonance plasma source S Inoue, Y Wada and K Koterazawa Deposition of TiC films by dual source dc magnetron sputtering O Nakagawara, K Fujibayashi, T Makino Influence of H,O partial pressure in the sputtering chamber on and Y Katayama the crystallinity and relative dielectric constant of SrTiO; thin film prepared at low substrate temperature C Hu, S Kotake, Y Suzuki and M Senoo Boron nitride thin films synthesized by reactive sputtering Y Song, T Sakurai, K Maruta, Optical and structural properties of dense SiO,, Ta,O,; and Nb,O, A Matusita, S Matsumoto, S Saisho thin-films deposited by indirectly reactive sputtering technique and K Kikuchi R Kamei, T Migita, T Tanaka Effect of d.c. bias on the deposition rate using r.f.-d.c. coupled and K Kawabata magnetron sputtering for SnN, thin films H Yokomichi and A Masuda Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution T Takahashi, K Masugata, H Kawai, Surface morphology of TiN films reactively deposited by bias S Kontani and J Yamamoto sputtering H Makihara, A Tabata, Y Suzuoki Effect of the hydrogen partial pressure ratio on the properties of and T Mizutani uc-Si: H films prepared by rf magnetron sputtering E Ando, S Suzuki, N Aomine, Sputtered silver-based low-emissivity coatings with high moist- M Miyazaki and M Tada ure durability X-S Li, T Tanaka and Y Suzuki Preparation and characterization of highly oriented Pb(Zr,Ti)O, thin films with seeding titanium layer deposited at low temperature by facing target sputtering K Kusaka, D Taniguchi, T Hanabusa Effect of input power on crystal orientation and residual stress in and K Tominaga AIN film deposited by dc sputtering M Takahashi, M Tsunoda and H Shoji Ultra-clean sputtering process for magnetic thin films on hard disk drives F Milde, M Dimer, Ch Hecht, D Schulze Large-area production of solar absorbent multilayers by MF- and P Gantenbein pulsed plasma technology Y Tachibana, H Ohsaki, A Hayashi, TiO,_y sputter for high rate deposition of TiO, A Mitsui and Y Hayashi ANNOUNCEMENT Contents /V acuum 59 (2000) VII-XIII Volume 59 Number 4 AUTHORS ARTICLES A Abdel-All, A Elshafie and DC electric-field effect in bulk and thin-film Ge,As3,Te.;7 chal- M M Elhawary cogenide glass J P Joly, F Gaillard, E Peillex and Temperature-programmed desorption (TPD) of water from iron, M Romand chromium, nickel and 304L stainless steel N-T H Kim-Ngan and W Soszka Effect of multiple scattering in the interaction of low-energy ions with the magnetite surfaces covered by xenon M S Tong, G R Dai and D S Gao Gas-sensing properties of PdO-modified SnO,—Fe,0, double- layer thin-film sensor prepared by PECVD technique JC Bernéde and L Assmann Polycrystalline CulnSe, thin films synthesized by microwave irradiation ABM Olslam, T Tambo Passivation of GaAs surface by GaS and C Tatsuyama V | Veksler The absolute value of the degree of ionization in the electron- exchange theory of secondary ion emission of metals T S Sheshadri Anode surface temperature profile in MPD thrusters D C York, A Chambers and A D Chew Thermal transpiration of helium and nitrogen in 50-um bore silica capillaries S B Wang and P R Zhu The formation of Ti-silicides by a metal vapour vacuum arc ion source implantation and annealing process G Luo, P Zhu, P Chen, Z Liu, H Lin An ultrahigh vacuum chemical vapor deposition system and its and P Qian application to growth of nNMOSFET and HBT structures A M Farid and A E Bekheet AC conductivity and dielectric properties of Sb.S, films J Musil, J Viéek and M Razicka Recent progress in plasma nitriding VACUUM DIARY Volume Contents Author Index