Two Dimensional Transition Metal Dichalcogenides Synthesis, Properties, and Applications PDF
Preview Two Dimensional Transition Metal Dichalcogenides Synthesis, Properties, and Applications
Narayanasamy Sabari Arul Vellalapalayam Devaraj Nithya Editors Two Dimensional Transition Metal Dichalcogenides Synthesis, Properties, and Applications Narayanasamy Sabari Arul (cid:129) Vellalapalayam Devaraj Nithya Editors Two Dimensional Transition Metal Dichalcogenides Synthesis, Properties, and Applications 123 Editors Narayanasamy Sabari Arul Vellalapalayam Devaraj Nithya Department ofChemical andBiochemical Gobichettipalayam, Tamil Nadu,India Engineering Dongguk University Seoul, Korea (Republicof) ISBN978-981-13-9044-9 ISBN978-981-13-9045-6 (eBook) https://doi.org/10.1007/978-981-13-9045-6 ©SpringerNatureSingaporePteLtd.2019 Thisworkissubjecttocopyright.AllrightsarereservedbythePublisher,whetherthewholeorpart of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission orinformationstorageandretrieval,electronicadaptation,computersoftware,orbysimilarordissimilar methodologynowknownorhereafterdeveloped. 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The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore Preface The great accomplishment of graphene has been pursued by an equally inspiring surgefortheexpansionofother2DmaterialsisolatedfromitsoriginalvanderWaals crystal that can form atomic sheets with extraordinary properties. Among them, transitionmetaldichalcogenides(TMDs)arelayeredmaterialswhicharecomposed of type MX2 of group VIA, where M is a transition metal atoms (M=Mo, W and X=S, Se, Te), and are emerging next-generation semiconductor materials. Depending on the arrangement of the atoms, the structures of 2D TMDs can be categorizedastrigonalprismatic(hexagonal,H),octahedral(tetragonal,T),andtheir distorted phase (T0). Depending on their chemical compositions and structural configurations, atomically thin 2D materials can be categorized as metallic, semimetallic, semiconducting, insulating, or superconducting. Two-dimensional TMDs exhibit unique electrical and optical properties that evolve from the quan- tum confinement and surface effects that arise during the transition of an indirect bandgap to a direct bandgap when bulk materials are scaled down to monolayers. The tunable bandgap in TMDs is accompanied by strong photoluminescence (PL) and large exciton binding energy, making them a potential candidate for a variety of optoelectronic devices, including solar cells, photodetectors, light-emittingdiodes,andphototransistors.Forinstance,uniquepropertiesofMoS 2 including direct bandgap (*1.8 eV), good mobility (*700 cm2 V−1s−1), high currenton/offratioof*107–108,largeopticalabsorption(*107m−1inthevisible range),andagiantPLarisingfromthedirectbandgap(1.8eV)inmonolayerhave been studied widely for variouselectronics and optoelectronics applications. Thisbooksolelyfocusesonthe“transitionmetaldichalcogenides(TMDs)”and deals with the “synthesis, properties, and application” aspects of the materials. Moreover,thecurrentchallengesandfutureperspectivesonthedevelopmentof2D TMDsarecomprehensivelydiscussedinthisbookwiththehopethatthebookwill v vi Preface provide a deep insight into the state of the art of transition metal dichalcogenides. WewouldliketothanktheeditorialassistanceandpatienceaswellasSpringerfor the invaluable help in the organization of the editing process. Seoul, Korea (Republic of) Narayanasamy Sabari Arul Gobichettipalayam, India Vellalapalayam Devaraj Nithya Contents 1 Two-Dimensional Transition Metal Dichalcogenides: An Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Tao Liang, Yu Cai, Hongzheng Chen and Mingsheng Xu 2 Preparation Methods of Transition Metal Dichalcogenides. . . . . . . 29 Mukulika Dinara and Chandra Sekhar Rout 3 Properties of Transition Metal Dichalcogenides . . . . . . . . . . . . . . . 69 James T. Gibbon and Vinod R. Dhanak 4 Transition Metal Dichalcogenides in Photocatalysts . . . . . . . . . . . . 107 Ting Huang, Min Zhang, Hongfei Yin and Xiaoheng Liu 5 Simulation of Transition Metal Dichalcogenides . . . . . . . . . . . . . . . 135 Mohammad Rezwan Habib, Wenchao Chen, Wen-Yan Yin, Huanxing Su and Mingsheng Xu 6 Transition Metal Dichalcogenides for Energy Storage Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173 Liangxu Lin, Shaowei Zhang and Dan A. Allwood 7 2D Transition Metal Dichalcogenides for Solution-Processed Organic and Perovskite Solar Cells . . . . . . . . . . . . . . . . . . . . . . . . 203 G.Kakavelakis,L.Gouda,Y.Tischler,I.KaliakatsosandK.Petridis 8 Transition Metal Dichalcogenides for Biomedical Applications. . . . 241 Linji Gong and Zhanjun Gu 9 Transition Metal Dichalcogenides in Sensors . . . . . . . . . . . . . . . . . 293 Rajeswari Ponnusamy and Chandra Sekhar Rout 10 Electronic Devices Based on Transition Metal Dichalcogenides . . . 331 Jiaxu Yan and Ze Xiang Shen vii Editors and Contibutors About the Editors Narayanasamy Sabari Arul received his Ph.D. in Nanoscience and Technology fromBharathiarUniversity,TamilNadu,India,followingwhichhehasworkedasa visiting Ph.D. research fellow at Lunghwa University of Science and Technology, Taiwan and Brain-Korea (BK21) Postdoctoral Fellow at Hanyang University, Seoul, South Korea and Assistant Professor in Dongguk University-Seoul, South Korea. His research interests include synthesis of metal oxide nanocomposites and thin films, nanomaterials, quantum dots, perovskites and two-dimensional dichalcogenides for photocatalysts, photovoltaic cells, memory devices, superca- pacitors, and electrochemical sensors. He has published more than 45 SCI journal articlesand20papersinproceedingsofinternationalconferencesandholdsoneUS andKoreanPatent.Dr.ArulalsoservesasarefereeforvariousjournalsinSpringer, Elsevier, Royal Society of Chemistry and Institute of Physics. Vellalapalayam Devaraj Nithya received her Ph.D. in Physics from Bharathiar University, Tamil Nadu, India, and had completed her Masters from same University. Her research interests mainly focus on metal oxide nanostructures and their applications for energy storage devices with special emphasis on superca- pacitors and Li-ion batteries. She has been the recipient of many awards and fellowships including the INSPIRE fellowship by the Department of Science and Technology, Government of India. She has presented her research work in many seminars and workshops and has published over 20 research papers in journals of international repute. ix x EditorsandContibutors Contributors Dan A. Allwood The University of Sheffield, Sheffield, UK Yu Cai Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, CO, USA Hongzheng Chen Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, People’s Republic of China Wenchao Chen College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, People’s Republic of China VinodR.Dhanak DepartmentofPhysics,UniversityofLiverpool,Liverpool,UK Mukulika Dinara School of Basic Sciences, Indian Institute of Technology, Bhubaneswar, Odisha, India JamesT.Gibbon DepartmentofPhysics,UniversityofLiverpool,Liverpool,UK Linji Gong CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, People’s Republic of China; University of Chinese Academy of Sciences, Beijing, People’s Republic of China L.Gouda DepartmentofChemistryandtheInstituteofNanotechnology,Bar-Ilan University, Ramat-Gan, Israel Zhanjun Gu CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, People’s Republic of China; University of Chinese Academy of Sciences, Beijing, People’s Republic of China Mohammad Rezwan Habib State Key Laboratory of Silicon Materials, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, People’s Republic of China Ting Huang Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing, China G. Kakavelakis Department of Materials Science and Technology, University of Crete, Gallos, Greece I. Kaliakatsos Department of Electronic Engineering, Hellenic Mediterranean University, Crete, Greece Tao Liang State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, People’s Republic of China EditorsandContibutors xi Liangxu Lin University of Wollongong, Wollongong, AU, Australia; Wuhan University of Science and Technology, Wuhan, China Xiaoheng Liu Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing, China K. Petridis Department of Electronic Engineering, Hellenic Mediterranean University, Crete, Greece Rajeswari Ponnusamy Centre for Nano and Material Sciences, Jain University, Ramanagaram, Bangalore, India Chandra Sekhar Rout Centre for Nano and Material Sciences, Jain University, Ramanagaram, Bangalore, India Ze Xiang Shen Division of Physics and Applied Physics, School of Physical and Mathematical Sciences (SPMS), Nanyang Technological University, Singapore, Singapore HuanxingSu StateKeyLaboratoryofQualityResearchinChineseMedicineand InstituteofChineseMedicalSciences,UniversityofMacau,MacauSAR,People’s Republic of China Y. Tischler Department of Chemistry and the Institute of Nanotechnology, Bar-Ilan University, Ramat-Gan, Israel MingshengXu StateKeyLaboratoryofSiliconMaterials,CollegeofInformation Science and Electronic Engineering, Zhejiang University, Hangzhou, People’s Republic of China Jiaxu Yan Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), Nanjing, People’s Republic of China; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences (SPMS), Nanyang Technological University, Singapore, Singapore Hongfei Yin Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing, China Wen-Yan Yin College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, People’s Republic of China Min Zhang Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing, China Shaowei Zhang University of Exeter, Exeter, UK Chapter 1 Two-Dimensional Transition Metal Dichalcogenides: An Overview TaoLiang,YuCai,HongzhengChenandMingshengXu Abstract Two-dimensionalmaterialsattractenormousresearchattentionsowingto the fascinating properties and great potential applications in electronics, optoelec- tronics,spintronics,energyconversion,andstorage.Amongthem,two-dimensional transitional metal dichalcogenides exhibit exceptional properties such as tunable bandgaps,phasetransition,andsuperconductivity.Assuch,two-dimensionaltransi- tionalmetaldichalcogenideshavebeenextensivelystudiedfocusingontheproperty, synthesis,modification,anddevices.Furthermore,thecombinationofdifferenttwo- dimensionaltransitionalmetaldichalcogenidesbringsinversatilefunctionalitiesand theproof-of-conceptelectricaldevicessuchastunnelingfield-effecttransistors,light- emittingdiodesandphotovoltaicshavebeendemonstratedintheplanarorvertical heterostructures.Thusinthischapter,wesummarizethebasicknowledgeandprevi- ousresearchresultsaboutthetwo-dimensionaltransitionalmetaldichalcogenides, emphasizingtheatomstructure,bandstructure,andelectricalapplications. 1.1 Introduction Since graphene was first isolated from highly oriented pyrolytic graphite (HOPG) in 2004 [1], the excellent properties of graphene are motivating rapidly growing researchenthusiasmsinthelayeredmaterials,especiallywhentheyarethinneddown totheatomicthickness.Forlayeredtransitionmetaldichalcogenides(TMDs),two- dimensional(2D,referringtofew-layerandmonolayerherein)onesexhibitdistinct B T.Liang·M.Xu( ) StateKeyLaboratoryofSiliconMaterials,CollegeofInformationScienceandElectronic Engineering,ZhejiangUniversity,Hangzhou310027,People’sRepublicofChina e-mail:[email protected] T.Liang·H.Chen DepartmentofPolymerScienceandEngineering,ZhejiangUniversity,Hangzhou310027, People’sRepublicofChina Y.Cai DepartmentofChemicalandBiologicalEngineering,UniversityofColoradoBoulder,Boulder, CO80309-0596,USA ©SpringerNatureSingaporePteLtd.2019 1 N.S.ArulandV.D.Nithya(eds.),TwoDimensionalTransitionMetalDichalcogenides, https://doi.org/10.1007/978-981-13-9045-6_1
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